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1 / 21 Supporting Information High-Color-Purity and Efficient Solution-Processable Blue Phosphorescent Light-Emitting Diodes with Pt(II) Complexes featuring 3 ππ* Transition Huili Ma, a Kang Shen,* ad Yipei Wu, a Fang Xia, a Feiling Yu, a Zhengyi Sun, a Chunyue Qian, a Qiming Peng, a Hong-Hai Zhang, a Cong You, a Guohua Xie,* b Xiao-Chun Hang,* a and Wei Huang ac a Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China. b Hubei Key Lab on Organic and Polymeric Optoelectronic Materials, Department of Chemistry, Wuhan University, Wuhan 430072, China. c Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi’an 710072, China. d State Key Laboratory of Coordination Chemistry, Nanjing University. *Correspondence: [email protected] (Hang, X.-C.), [email protected] (Xie, G. H.) [email protected] (Shen, K.) Contents General Procedures ………………………………………………………02 Structural Characterizations………………………………………………05 Thermal Properties ……………………………………………………… 08 Characterizations of Energy levels ………………………………………09 Computational Simulations ………………………………………………10 Photophysical Properties …………………………………………………14 Electroluminescence………………………………………………………18 IR, Raman, 1 H NMR and 13 C NMR Spectra………………………………19 References…………………………………………………………………21 Electronic Supplementary Material (ESI) for Materials Chemistry Frontiers. This journal is © the Partner Organisations 2019

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Page 1: Supporting Information1 / 21 Supporting Information High-Color-Purity and Efficient SolutionProcessable Blue - Phosphorescent Light-Emitting Diodes with Pt(II) Complexes featuring

1 / 21

Supporting Information

High-Color-Purity and Efficient Solution-Processable Blue

Phosphorescent Light-Emitting Diodes with Pt(II)

Complexes featuring 3ππ* Transition

Huili Ma,a Kang Shen,*ad Yipei Wu,a Fang Xia,a Feiling Yu,a Zhengyi Sun,a Chunyue Qian,a Qiming Peng,a Hong-Hai Zhang,a Cong You,a Guohua Xie,*b Xiao-Chun Hang,*a and Wei Huangac a Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China. b Hubei Key Lab on Organic and Polymeric Optoelectronic Materials, Department of Chemistry, Wuhan University, Wuhan 430072, China. cShaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi’an 710072, China. dState Key Laboratory of Coordination Chemistry, Nanjing University.

*Correspondence: [email protected] (Hang, X.-C.), [email protected] (Xie, G. H.) [email protected] (Shen, K.)

Contents

General Procedures ………………………………………………………02

Structural Characterizations………………………………………………05

Thermal Properties ……………………………………………………… 08

Characterizations of Energy levels ………………………………………09

Computational Simulations ………………………………………………10

Photophysical Properties …………………………………………………14

Electroluminescence………………………………………………………18

IR, Raman, 1H NMR and 13C NMR Spectra………………………………19

References…………………………………………………………………21

Electronic Supplementary Material (ESI) for Materials Chemistry Frontiers.This journal is © the Partner Organisations 2019

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General Procedures:

Synthesis and Characterization. 1H NMR and 13C NMR spectra were recorded

at 300 MHz and 400 MHz on Varian Liquid-State NMR instruments in DMSO-d6

solutions and chemical shifts were referenced to residual protiated solvent. 1H NMR

spectra were recorded with residual H2O (δ = 3.33 ppm in DMSO-d6) as internal

reference. Mass spectra were recorded on a Bruker autoflex matrix assisted laser

desorption/ionization time-of-flight (MALDI-TOF). Pt(ppzOczpy-2m) and

Pt(ppzOczpy-4m) were prepared exactly the same as previously reported procedure. [1]

Single crystal X-ray data diffraction measurements of complexes Pt(ppzOppz),

Pt(ppzOczpy-m) and Pt(ppzOczpy-4m) were collected at 293 K on a Bruker SMART

APEX CCD diffractometer using graphite monochromated Mo Kα radiation (λ =

0.71073 Å). The linear absorption coefficients, scattering factors for the atoms, and

the anomalous dispersion corrections were referred to from the International Tables

for X-ray Crystallography. The structures were solved by direct methods, and the

non-hydrogen atoms were located from the trial structures and then refined

anisotropically using full-matrix least-squares procedures based on F2 values using

SHELXTL (version 6.10) crystallographic software. The H-atoms attached to carbon

atoms were positioned geometrically and treated as riding atoms using SHELXL

default parameters. The crystal and refinement data are collected in Table S1. [2,3]

The UV-visible spectra were recorded on a SHIMADZU UV-1750 spectrometer

and steady state emission spectra were measured on a Hitachi F-4600 fluorescence

spectrophotometer. Before emission spectra were measured, the solutions were

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thoroughly bubbled by nitrogen inside a glove box with oxygen less than 0.1 ppm.

Quantum efficiency measurements were carried out at room temperature in a solution

of dichloromethane or solid matrix PMMA on a Horiba Jobin Yvon FluoroLog-3

spectrometer. Phosphorescence lifetime measurements were performed on the same

spectrometer with a time correlated single photon counting method using a LED

excitation source.

Cyclic voltammetry was performed using a CH Instrument 660E electrochemical

analyzer under a nitrogen atmosphere in golvebox. Anhydrous DMF and DCM was

used as the solvent for reduction and oxidation, respectively. 0.1 M tetra(n-butyl)

ammonium hexafluorophosphate was used as the supporting electrolyte. A silver wire

was used as the pseudo reference electrode, a Pt wire was used as the counter

electrode, and platinum column was used as the working electrode. The redox or

oxidation potentials are reported referring to ferrocenium/ferrocene (Fc+/Fc). The

onset potential was determined from the intersection of two tangents drawn at the

rising and background current of the cyclic voltammogram. Their HOMO and LOMO

energy levels were calculated from the onset of oxidation (Eox, onset) and reduction

potentials (Ere, onset) according to the equation of EHOMO/LUMO = −(Eox/re, onset t- E(Fc/Fc+) +

4.8) eV, respectively. Differential scanning calorimetry (DSC) measurements were

performed on a NETZSCH DSC 200 PC unit at a heating rate of 10 oC min-1 from 20

to 440 oC under argon. The glass transition temperature (Tg) was determined from the

second heating scan. Thermogravimetric analysis (TGA) measurements were

undertaken with NETZSCH STA 449C instrument. The thermal stability of the

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samples under nitrogen atmosphere was determined by measuring their weight loss

(5 %) when heating at a rate of 10 oC min-1 from 30 to 550 oC.

Computational Details. The equilibrium geometries of the S0 and T1 were

optimized by density functional theory (DFT) method using B3LYP functional

together with 6-31G(d) basis set. Frequency calculations were performed to ensure

structures had no imaginary frequencies. At the same level, the nature of excited

singlet and triplet states, including the excitation energy and natural transition orbitals

were evaluated using time-dependent density functional theory (TD-DFT). All

calculations were carried out with Gaussian 09 program.[4]

OLED Fabrication. The pre-patterned indium tin oxide (ITO) substrates were

cleaned by ultrasonic acetone bath, followed by ethanol bath. Afterwards, the

substrates were dried with N2 and then loaded into a UV-Ozone chamber. After

UV-ozone treatment for 20 min, The PEDOT:PSS layer was directly spin-coated on

the ITO substrate as the hole-injecting layer, and then annealed at 120 °C for 10 min

inside the N2-filled glovebox. The emitting layer was also prepared by spin-coating

directly on the hole-injecting layer, and then annealed at 50 °C for 10 min. The

electron-transporting material and the composite cathode were consecutively

thermally evaporated onto the emitting layer in a vacuum chamber. Before being

taken out of the glovebox, all the devices were encapsulated with UV curable epoxy.

The voltage−current−luminance characteristics and the EL spectra were

simultaneously measured with PR735 SpectraScan Spectroradiometer and Keithley

2400 sourcemeter unit under ambient atmosphere at room temperature.

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Characterization data

Pt(ppzOczpy-2m)

N

O

NN N

Pt

1H NMR (300 MHz, DMSO-d6) δ: 9.12 (d, J = 6.1 Hz, 1H), 8.88 (d, J = 2.7 Hz, 1H),

8.18-8.13 (m, 3H), 8.10 (d, J = 8.9 Hz, 1H), 7.87 (d, J = 8.3 Hz, 1H), 7.53-7.45 (m,

1H), 7.42 (d, J = 7.1 Hz, 1H), 7.38 (s, 1H), 7.27 (d, J = 6.3 Hz, 1H), 7.18 (d, J = 8.7

Hz, 1H), 6.90 (s, 1H), 6.83 (s, 1H), 2.45 (s, 3H), 2.37(s, 3H). HRMS (m/z): Calcd. for

C28H21N4OPt [M+H+]: 624.1291, Found: 624.1295.

Pt(ppzOczpy-4m)

N

O

NN N

Pt

1H NMR (300 MHz, DMSO-d6) δ: 9.09 (d, J = 6.0 Hz, 1H), 8.16-8.09 (m, 2H), 7.98

(s, 1H), 7.83 (d, J = 8.3 Hz, 1H), 7.54 – 7.44 (m, 1H), 7.43 – 7.36 (m, 1H), 7.19 –

7.08 (m, 3H), 6.79 (s, 1H), 6.43 (s, 1H), 2.76 (s, 3H), 2.43 (s, 3H), 2.41 (s, 3H), 2.37

(s, 3H). 13C NMR (75 MHz, CDCl3) δ 155.50, 155.34, 152.98, 151.73, 151.70, 150.45,

143.76, 141.13, 136.83, 131.90, 126.26, 125.16, 122.53, 121.74, 118.73, 118.33,

117.76, 117.16, 116.40, 115.38, 112.31, 110.74, 109.92, 101.94, 24.33, 24.08, 17.52,

17.31.1HRMS (m/z): Calcd. for C30H24N4OPt [M+]: 651.1595, Found: 651.1585.

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X-Ray Crystallography

Figure S1. Crystal structures of Pt(ppzOczpy), Pt(ppzOczpy-m) and

Pt(ppzOczpy-4m).

Figure S2. Unit cell structures of Pt(ppzOczpy-m) (left) and Pt(ppzOczpy-4m)

(right).

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Table S1. X-Ray Molecular Structures, Selected Bond Lengths (Å) and Angles (deg)

for Pt(ppzOczpy), Pt(czpyOczpy-m) and Pt(czpyOczpy-4m).

Bonds and

Angles

Pt(ppzOczpy) Pt(ppzOczpy-m) Pt(ppzOczpy-4m)a

α β bond length (Å)

Pt-N1 2.081 2.109 2.089 2.103 Pt-N2 2.083 2.109 2.102 2.116 Pt-C2 1.970 1.964 1.985 1.965 Pt-C1 1.921 1.974 1.967 1.967

bond angle (deg) N1-Pt-N2 99.409 98.967 99.953 100.337 N2-Pt-C2 89.964 90.728 90.281 90.151 C2-Pt-C1 91.960 91.344 91.899 91.085 C1-Pt-N1 79.773 80.508 79.769 80.076

dihedral (deg) A-B 39.749 41.806 52.777 54.073 B-C 28.866 29.111 32.794 33.555 B-D 30.428 35.892 31.970 35.293

aα and β stand for two conformers in the unit cells.

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Thermal properties

0 100 200 300 400

-0.8

0.0

0.8

1.6249 oC

DSC(

mW

/mg)

Temperature(oC)

Pt(ppzOczpy)

155 oC

(a)

0 100 200 300 400

-1.0

-0.5

0.0

0.5

1.0

1.5

2.0

300oC

PtON1

DSC

(mW

/mg)

Temperature (oC)

179oC

(b)

0 100 200 300 400

-1

0

1

2

3

4

5

DSC

(mW

/mg)

Temperature (oC)

Pt(ppzOczpy-m)

174oC

391oC

(c)

0 100 200 300 400

-1

0

1

2

3

4

5

DSC

(mW

/mg)

Temperature (oC)

Pt(ppzOczpy-2m)

176oC

198oC

381oC

(d)

0 100 200 300 400

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

340 oC

DSC

(mW

/ m

g)

Temperature (oC)

Pt(ppzOczpy-4m)

187 oC

(e)

100 200 300 400 500

86

88

90

92

94

96

98

100

469oC480oC

483oC482oC

455oC

Wei

ght (

%)

Temperature (oC)

Pt(ppzOczpy) PtON1 Pt(ppzOczpy-m) Pt(ppzOczpy-2m) Pt(ppzOczpy-4m)

95 wt% remain

314 oC

(f)

Figure S3. DSC (a-e) and TGA (f) curves.

Table S2. Thermal properties of Pt complexes.

Complex Tg

[oC] Tm

[oC] Td

[oC]

Pt(ppzOczpy) 155 249 480

PtON1 179 300 455

Pt(ppzOczpy-m) 174 391 483

Pt(ppzOczpy-2m) 176 381 482

Pt(ppzOczpy-4m) 187 340 469

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Characterizations of Energy levels

-3 -2 -1 0 1 2

Potential (V)

Pt(ppzOczpy-m) Pt(ppzOczpy-2m) Pt(ppzOczpy-4m)

Figure S4. CV curves of Pt(ppzOczpy-m), Pt(ppzOczpy-2m) and Pt(ppzOczpy-4m).

Table S3. Experimentally measured energy levels of Pt complexes.

Complex ES1a/ ET1b/ΔEST c (eV) HOMO/LUMO/ Eg (eV) d

Pt(ppzOczpy) 3.03/2.80/0.23 -5.29/-2.25/3.04

PtON1 3.01/2.80/0.21 -5.29/-2.26/3.03

Pt(ppzOczpy-m) 3.12/2.80/0.32 -5.32/-2.15/3.17

Pt(ppzOczpy-2m) 3.10/2.80/0.30 -5.27/-2.15/3.12

Pt(ppzOczpy-4m) 3.07/2.81/0.26 -5.30/-2.10/3.20 aExcitation energy of S1. bThe energy of T1. cEnergy gap between the lowest singlet and triplet states. dThe HOMO and LUMO levels were estimated by using Cp2Fe0/+ values of 4.8 eV below the vacuum level, and Eg = ELUMO- EHOMO.

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Computational simulations

Table S4. Theoretical simulated results of Pt(ppzOczpy-4m) conformers.a

Pt(ppzOpopy-4m) SCF (a.u.)b ΔE (eV)c S1 (eV) T1 (eV)

Conformer α -1452.77401379 0.15 3.04 2.80

Conformer β -1570.66391723 0.0 2.82 2.65 aα and β are the conformers of Pt(ppzOczpy-4m). bSelf-consistent field

values. cD-values are relative to the conformer β having the lowest energy

in ground state.

-6

-5

-4

-3

-2

-1

0 Pt(ppzOczpy-4m)

Pt(ppzOczpy-2m)

Pt(ppzOczpy-m)

PtON1

Pt(ppzOczpy)

-1.25

3.53

-4.68

3.463.513.393.45

-4.76-4.80-4.75-4.84

-1.22-1.27-1.36-1.39

Orbi

tal E

nerg

y (e

V)

Figure S5. Energy of molecule orbitals based on S0 geometry.

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-6

-5

-4

-3

-2

-1

0

3.083.183.192.883.04

-4.58 -4.49-4.55-4.56-4.62

-1.58-1.41-1.37-1.39

Orbi

tal E

nerg

y(eV

) -1.68

Pt(ppzOczpy-4m)Pt(ppzOczpy-m)Pt(ppzOczpy)

PtON1 Pt(ppzOczpy-2m)

Figure S6. Energy of molecule orbitals based on T1 geometry.

Figure S7. Molecular orbitals based on S0 geometry.

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Figure S8. Molecule orbitals based on T1 geometry.

Figure S9. The hole and electron distributions based on optimized T1 geometry

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Table S5. Molecule orbitals analysis of Pt complexes.

Complex E(eV) TOsa f

Pt(ppzOczpy)

S1 2.88 H→L 0.69637 0.0287

T1 2.68

H→L 0.60873

1.91×10-4 H→L+1 0.20372

H→L+3 0.17039

PtON1

S1 2.82 H→L 0.69591 0.0249

T1 2.64

H→L 0.63569

H→L+1 0.12719

H→L+3 0.13507

Pt(ppzOczpy-m)

S1 2.97 H→L 0.69644 0.0403

T1 2.72

H→L 0.57942

H→L+1 0.22862

H→L+3 0.21192

Pt(ppzOczpy-2m)

S1 2.96 H→L 0.69642 0.0455

T1 2.71

H→L 0.58321

H→L+1 0.22815

H→L+2 0.20476

H→L+3 0.27305

Pt(ppzOczpy-4m)

S1 2.90 H→L 0.69646 0.0376

T1 2.69

H→L 0.63868

H→L+1 0.11643

H→L+2 0.14371

H→L+3 0.1688

a Numbers in the table are transition coefficients.

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Photophysical Properties

0 50 100

10-3

10-2

10-1

100

RT in DCM

Pt(ppzOczpy) PtON1 Pt(ppzOczpy-m) Pt(ppzOczpy-2m) Pt(ppzOczpy-4m)

Norm

alize

d In

tens

ity (a

.u.)

Time (µs)

(a)

0 50 100

10-3

10-2

10-1

100

RT in PMMA

Pt(ppzOczpy) PtON1 Pt(ppzOczpy-m) Pt(ppzOczpy-2m) Pt(ppzOczpy-4m)

Norm

aliz

ed In

tens

ity (a

.u.)

Time (µs)

(b)

Figure S10. Decay lifetimes of Platinum complexes measured at peak wavelength in

CH2Cl2 (a) and PMMA (b) at room temperature.

400 450 500 550 600 6500.0

2.0x105

4.0x105

6.0x105

8.0x105

Temperature

Pt(ppzOczpy) 5 wt% doped in PMMA

lum

inec

ent I

nten

sity

(a.u

.)

Wavelength (nm)

100 K 150 K 200 K 250 K 300 K 350 K 400 K

445 nm

475 nm

508 nm

(a)

400 450 500 550 600 650

0.0

0.2

0.4

0.6

0.8

1.0 Temperature

Temperature

Pt(ppzOczpy) 5 wt% doped in PMMA

Norm

alize

d In

tens

ity (a

.u.)

Wavelength (nm)

100 K 150 K 200 K 250 K 300 K 350 K 400 K

(b)

50 100 150 200 250 300 350 4000.0

0.2

0.4

0.6

0.8

1.0

PL Efficiency Radiative Decay Rate

Temperature (K)

Poto

lum

inec

ent E

fficic

ncy

(a.u

.)

0.5

1.0

1.5

2.0

2.5

Kr (X10

5 S-1)

(c)

0.8

1.2

1.6

2.0

100 200 300 400

Deca

y ra

te (1

/τ) (x

105 s

-1)

ObservedSimulated

(d)

Pt(ppzOczpy)5 wt% doped in PMMA

Temperature (K)

Figure S11. Temperature-dependent emission properties of Pt(ppzOczpy) (5 wt %) in

PMMA. Primary emission spectra (a) and decay lifetimes (d) were measured in situ.

Normalized emission spectra (b) and temperature-dependent quantum efficiency and

kr (c) were translated data from (a).

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400 450 500 550 600 6500.0

5.0x105

1.0x106

1.5x106

2.0x106

Temperature

Lum

ines

cent

Inte

nsity

(a.u

.)

Wavelength (nm)

100K 120K 150K 200K 250K 300K 350K 400K

PtON1 5 wt%doped in PMMA

(a)

400 450 500 550 600 650

0.0

0.2

0.4

0.6

0.8

1.0

Temperature

Temperature

Norm

alize

d In

tens

ity (a

.u.)

Wavelength (nm)

100K 120K 150K 200K 250K 300K 350K 400K

PtON1 5 wt% doped in PMMA

(b)

100 200 300 4000.0

0.2

0.4

0.6

0.8

1.0

Poto

lum

inec

ent E

fficic

ncy

PL Efficiency Radiative Decay Rate

Temperature (K)

(c)

1.0

1.5

2.0

2.5

3.0

3.5

Kr (X10

5 S-1)

100 200 300 400

1.6

2.0

2.4

2.8

3.2(d)

Deca

y ra

te (1

/τ) (x

105 s

-1)

Pt(ON1)5 wt% Doped in PMMA

Temperature (K)

ObservedSimulated

Figure S12. Temperature dependent emission properities of PtON1 (5 wt %) in PMMA. Primary emission spectra (a) and decay lifetimes (d) were measured in situ. Normalized emission spectra (b) and temperature-dependent quantum efficiency and kr (c) were translated data from (a).

Table S6. Kinetic parameters for the excited-states decay of Pt(ppzOczpy-4m),

Pt(ppzOczpy) and PtON1.

Pt complex k1 (s-1) Ea1 (cm-1) k2 (s-1) Ea2 (cm-1) k0 (s-1)

Pt(ppzOczpy-4m) 1.95×105 8 6.31×107 1720

1.00×104 Pt(ppzOczpy) 1.85×105 6 3.00×108 2058

PtON1 3.49×105 14 7.44×107 1539

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400 450 500 550 600 6500.0

0.2

0.4

0.6

0.8

1.0

Norm

alize

d In

tens

ity (a

.u.)

Wavelength (nm)

DCM DMF 2-MeTHF 5%-PMMA 5%-PS CH3CN DMSO

Figure S13. Emission spectra at ambient temperature of Pt(ppzOczpy-4m) (5 wt% in

solid matrix and 10-5 M in solution).

400 450 500 550 600 6500.0

0.2

0.4

0.6

0.8

1.0

Norm

alize

d In

tens

ity (a

.u.)

Wavelength (nm)

2 % 5 % 10 % 20 % 30 % 50 %

(a)

Pt(ppzOczpy-4m)Doped in CzSi

Concentration

420 440 460 480 500 5200.0

0.2

0.4

0.6

0.8

1.0

5 10 15 20 25 30 350

1

2

3

4

5

6

0.12

Conc

entra

tion

(a.u

.)

Time (µs)

Exciton5.84

5 % Pt(ppzOczpy-4m) doped in PMMA

Time

Norm

alize

d In

tens

ity (a

.u.)

Wavelength (nm)

0-5.6 us 5.6-11.2 us 11.2-16.8 us 16.8-22.4 us 22.4-28 us 28-33.6 us

(b)

Figure S14. Normalized luminescent spectra of 2-50 wt% doping of Pt(ppzOczpy-4m) in CzSi (a), normalized time-dependent spectra of Figures 4e (b) and exciton relaxation curves (b, Insert graph).

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0 50

10-3

10-2

10-1

100 77K 100K 150K 200K 250K 300K 350K 400K

Norm

alize

d In

tens

ity (a

.u.)

Time (µs)

(a)

0 50 100

10-3

10-2

10-1

100

2% 5%10 % 20% 30% 50%

Norm

aliz

ed In

tens

ity (a

.u.)

Time (µs)

(b)

Figure S15. Decay lifetimes of Pt(ppzOczpy-4m). Temperature-dependent measurements (a) at 5 wt % doping concentration in PMMA and concentration-dependent measurements (b) at room temperature (291.5 K) in PMMA.

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Electroluminescence

Figure S16. Device structure series A: ITO/PEDOT:PSS (70 nm)/ CzSi:Pt(ppzOczpy-4m) (100-x:x, 40 nm)/DPEPO (10 nm)/TmPyPB (50 nm)/Liq (1 nm)/Al (100 nm), where x = 5, 10, 20 and 30. Electroluminescence (EL) spectra (a), current density–voltage curves (b), luminance–voltage curves (c) and curves of current efficiency (d), power efficiency (e) and EQE (f) versus current density.

Table S7. Performance of device series A.

Dopant

CIE (x, y)

λ0-0 FWHM Von b @Max @1000 cd/m2

C a [%]

Peak [nm]

Width

[nm]

Voltage

[V]

ηc c [cd/A]

ηp d [lm/W]

ηee [%]

ηc c [cd/A]

ηp d [lm/W

]

ηe e [%]

5 (0.148, 0.109) 448 42 8.9 4.3 1.1 4.4 - - - 10 (0.151, 0.121) 450 43 7.0 6.9 3.6 6.4 3.8 0.9 3.8 20 (0.154, 0.130) 450 45 5.7 7.2 2.7 6.4 5.0 1.3 4.4

30 (0.159, 0.167) 452 56 6.4 17.3 9.1 13.0 4.8 1.2 3.7

Device structure series A: ITO/PEDOT:PSS (70 nm)/ CzSi:Pt(ppzOczpy-4m) (100-x:x, 40 nm)/DPEPO (10 nm)/TmPyPB (50 nm)/Liq (1 nm)/Al (100 nm). a

concentration of Pt(ppzOczpy-4m) doped in emissive layer in wt %. b voltage at 10 cd/m2. c Current efficiency (ηc). d Power efficiency (ηp). e External quantum efficiency (ηe) .

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1H NMR and 13C NMR spectra

0.1.01.52.02.53.03.54.04.55.05.56.06.57.07.58.08.59.09.5f1 (ppm)

2.90

2.98

0.71

1.04

1.17

1.04

1.15

0.99

1.02

0.98

0.81

3.05

1.00

0.97

2.37

2.45

6.83

6.90

7.17

7.20

7.26

7.28

7.38

7.41

7.43

7.47

7.49

7.51

7.85

7.88

8.08

8.11

8.14

8.17

8.87

8.88

9.11

9.13

7.07.58.08.59.0f1 (ppm)

Figure S17. 1H NMR spectrum of Pt(ppzOczpy-2m).

0.00.51.01.52.02.53.03.54.04.55.05.56.06.57.07.58.08.59.09.510.00.5f1 (ppm)

3.12

2.88

3.30

3.06

1.03

0.69

2.92

1.05

1.02

1.01

1.03

1.03

0.98

1.00

2.37

2.41

2.43

2.76

6.43

6.79

7.11

7.13

7.14

7.16

7.37

7.40

7.42

7.46

7.49

7.51

7.82

7.85

7.98

8.11

8.12

8.13

8.15

9.08

9.10

6.57.07.58.08.59.0f1 (ppm)

Figure S18. 1H NMR spectrum of Pt(ppzOczpy-4m).

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Figure S19. 13C NMR spectrum of Pt(ppzOczpy-4m).

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