2005

10 μm

17.9

17.4 17.4

16.1

17.9

17.317.517.5

18.318.0

18.5

19.0

15.0

15.5

16.0

16.5

17.0

17.5

18.0

18.5

19.0

19.5

20.0

XLS

0376

XLS

0386

XLS

0390

XLS

0391

XLS

0392

XLS

0393

XLS

0394

XLS

0395

XLS

0398

XLS

0400

XLS

0401

XLS

0402

world record = 19.5 %

Process

Cell

effi

ciency

[%]

p-type

n-type

recombination

p n

ZnO

ITO

incoming light

incoming light growth direction

CdS

CdS Cu(In,Ga)Se2

CdTe

metal back contact

metal back contact

glass substrateglass superstrate

GaP 2.26

1.42

1.35

0.36

InP

InAs

InP

GaAs

GaAs

Ga(As,P)

indirectGaP

(In, Ga)P

gE (eV)

(In, Ga)AsIn(As, P)

GaAsInP

InAs

5.576 Å

5.653 Å

5.869 Å

5.680 Å

1.8 eV

1.6 eV

1.4 eV

1.2 eV

1.0 eV

0.8 eV

0.6 eV

�=8a© JHW

a

P

P

PP

P