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2005
10 μm
17.9
17.4 17.4
16.1
17.9
17.317.517.5
18.318.0
18.5
19.0
15.0
15.5
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
XLS
0376
XLS
0386
XLS
0390
XLS
0391
XLS
0392
XLS
0393
XLS
0394
XLS
0395
XLS
0398
XLS
0400
XLS
0401
XLS
0402
world record = 19.5 %
Process
Cell
effi
ciency
[%]
p-type
n-type
recombination
p n
ZnO
ITO
incoming light
incoming light growth direction
CdS
CdS Cu(In,Ga)Se2
CdTe
metal back contact
metal back contact
glass substrateglass superstrate
GaP 2.26
1.42
1.35
0.36
InP
InAs
InP
GaAs
GaAs
Ga(As,P)
indirectGaP
(In, Ga)P
gE (eV)
(In, Ga)AsIn(As, P)
GaAsInP
InAs
5.576 Å
5.653 Å
5.869 Å
5.680 Å
1.8 eV
1.6 eV
1.4 eV
1.2 eV
1.0 eV
0.8 eV
0.6 eV
�=8a© JHW
a
P
P
PP
P
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