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Circuits Photoniques Intégrés pour les Circuits Photoniques Intégrés pour les
Applications en Communications OptiquesApplications en Communications Optiques
Journée scientifique de la chaire UPsud/PSA« Optoélectronique et Photonique »
Guang-Hua DUANIII-V Lab, a joint lab of 'Alcatel-Lucent Bell Labs France', 'Thales
Research and Technology' and 'CEA Leti', Campus Pol ytechnique, 1, Avenue A. Fresnel, 91767 Palaiseau cedex, France
5 Juin 2014
What is IIIWhat is III--V Lab?V Lab?
► A jointly owned Alcatel-Lucent Bell Labs / Thales Research &
Technology /CEA R&D Lab LETI
� French GIE (Groupement d’Intérêt Economique) organization
► with about 150 R&D experts (incl. 25 from CEA-Leti + ~18 PhD students)
� Dedicated to epitaxial growth, device and circuit design and manufacturing
► performing R&T on III-V semiconductor technology and integration with
Si circuits and microsystems Si circuits and microsystems
� Optoelectronic and microelectronic materials, devices and circuits
� From basic research to technology transfer for industrialisation …
� … or to small scale and pilot line production
► for complementary Alcatel-Lucent / Thales applications …
� High bit rate Optical Fibre and Wireless Telecommunications
� Microwave and Photonic systems for Defence, Security and Space
Page 2
OutlineOutline
►Motivation
►Current state of art of III-V and silicon PICs
� InP based PICs
� Silicon based PICs
� Comparison of InP PICs and silicon PICs� Comparison of InP PICs and silicon PICs
►Hybrid III-V/Si integration technology
►Future directions
Page 3
Optical communication market segments Optical communication market segments
and key components /key techniquesand key components /key techniques
Acces networksUp to 10 Gb/s per λλλλ
Data communications
Up to 25 Gb/s
VCSEL: low power consumption
Parallel links
Directly Modulated Lasers ( DML) : low cost, low temperature sensitivity, low chirp
100 m
Page 4
Metro networksUp to 100 Gb/s per λλλλ
Core networksUp to 400 Gb/s per λλλλ
Electro-absorption Modulated Lasers (EML)
Wavelength division multiplexing
Tunable lasers over C band
Wavelength division multiplexing
QPSK modulators/coherent detection
10 km
100 km
ShortShort--reachreach opticaloptical transceiverstransceivers
Page 529 Juin 2011
Transmission WDM
Atté
nuat
ion
(dB
/km
)
Longueur d’onde (µm)
0
1
2
1,45 1,46 1,48 1,55 1,60 1,65 1,80
λλλλ (nm)1530 40 50 60 1570
λλλλ1 λλλλi λλλλk λλλλN
Longueur d’onde (nm)bande passante des
amplificateurs optiques
Wavelength Division MultiplexingWavelength Division Multiplexing
laser modulator
laser modulator
laser modulator
WDM transmitter
Wavelength multiplexer
λλλλ1
λλλλ2
λλλλNlaser λλλλN
Photodiode
Photodiode
Photodiode
Wavelength multiplexer
λλλλ1
λλλλ2
λλλλN
WDM receiver
MetroMetro--long long haulhaul transceivertransceiver
Page 829 Juin 2011
Evolution of Evolution of CoherentCoherent TransceiverTransceiver ModuleModule
Page 929 Juin 2011
100 Gb/s Transmit
100Gb/s Transmit
100Gb/s Receive
Photonic Integrated CircuitsPhotonic Integrated Circuits
100 Gb/s Receive
Courtery from Infinera
PIC: an onPIC: an on--going (r)evolutiongoing (r)evolution
laser modulator
laser modulator
laser modulator
WDM transmitter
Wavelength multiplexer
λλλλ1
λλλλ2
λλλλNlaser
Photonic IntegrationSmall footprintCost effectiveReduced power consumption
High device yieldTrade-off on performance
Intégration monolithic sur InP
Butt-joint par une reprise de croissance
Guide actif
laser
Guide passif
Mux
CWDM : intégration de 4 et 8 λλλλ par SAG
► Principe de la SAG : compositions + effet latéral
X
Ga0.40In0.60As
Substrat
épaisseur x 2.5
200 nm
Ga0.50In0.50As
►Masque 8 λλλλ à 20 nm
Wm1
Wm2
λλλλ1
λλλλ21500
1550
CWDM : intégration de 4 et 8 λλλλ par SAG
Wm i
dielectric
λλλλi1300
1350
1400
1450
0 20 40 60 80 100 120 140 160 180
Wm (µµµµm)
λλ λλ (n
m)
∆λ∆λ∆λ∆λ=160 nm
100 G PIC from 100 G PIC from InfineraInfinera
Laser- modulator
Wavelength multiplexer
λλλλ1
λλλλ2
λλλλN
Laser- modulator
Laser- modulator
Produit visé PIC 10x10G TOSAProduit visé PIC 10x10G TOSA
Isolateur, wavelength lockerSous-module optique
Substrat céramique multi-couches avec 10 drivers (éloignés
du PIC)
Élément Peltier
Embase Si
Barrette 10 lasers flip-chippée
AWG flip-chippé
PIC: Detailed ComparisonPIC: Detailed Comparison
►Power consumption: 30% less than 10xXFP
►Footprint reduction compared to discrete solution: 68% less
than 10xXFP+Mux/Demux
► Lower cost: 7.6 k$ in 2011 and 5.2 k$ in 2012 compared to 13.7
k$ for 10xXFP+Mux/Demux
►Comparison between ALU PIC and Infinera PIC
ALU PIC
Power Consumption (28W)
Reach: Unamplified links up to 70 km� higher Tx output power (DML
approach + Silica AWG)� higher sensitivity (APD based Rx)
Infinera PIC
Power Consumption (48W)
Reach: Unamplified links <10km� lower Tx output power (EML
approach + InP AWG)� lower sensitivity (PIN based Rx)
PIC for QPSK transmitterPIC for QPSK transmitter
► Infinera’s QPSK transmitter:
Nested MZM
DFBPM
► Bell Lab’s QPSK/QAM Source
� Integration of tunable laser and Electro-absorption Modulators
Page 18
I. Kang, Optics Express 2007, C. Kazmierski, OFC 201 4
Roadmap of Roadmap of Infinera’sInfinera’s PICsPICs
Page 19
40 elements
40 elements
100 elements
From R. Dodd, Infinera
►CMOS EIC platform on silicon� Mature industrial process with high yield
� Foundry model for cost-effective industrial production
� Cost-effective for large volume
►PICs on silicon� Taking benefit for EICs: industrial tools, foundry models, etc.
� Co-integration with CMOS electronics, close proximity between signal
Photonic integrated circuits on siliconPhotonic integrated circuits on silicon
� Co-integration with CMOS electronics, close proximity between signal processing unit and photonic elements
� Providing optical interconnect solutions for “More than Moore” for EICs
Can silicon be a Photonic integration platform?
The building blocksThe building blocks
Optical modulator
MUX & DEMUX
Photodetector
Grating coupler
Waveguide
In-plane coupler
Laser source
Optical switch
Wafer level testingWafer level testing
Impossible d'afficher l'image. Votre ordinateur manque peut-être de mémoire pour ouvrir l'image ou l'image est endommagée. Redémarrez l'ordinateur, puis ouvrez à nouveau le fichier. Si le x rouge est toujours affiché, vous devrez peut-être supprimer l'image avant de la réinsérer.
Luxtera’sLuxtera’s Active Optical Active Optical CablesCables
Luxtera technology for transceiver•Freescale SC Hip7 0.13µm SOI CMOS process • Customized SOI & CMOS 130nm technology• Proprietary library for electronic design
• Flip chip laser die bonding •Si lateral depletion modulator� 10Gb/s •Ge photodetectors� 20GHz•Surface holographic gratings fiber coupling•4x28 Gb/s using 4 parallel links
Page 2329 Juin 2011
•4x28 Gb/s using 4 parallel links
Luxtera and STMicroelectronics to Enable High-Volume Silicon Photonics SolutionsCollaboration between two leading companies will bring silicon photonics into mainstream markets
March 1 st, 2012
SingleSingle--chip 100 G Si transceiver Chipchip 100 G Si transceiver Chip
Page 24
•27x35.5 mm2 module: PIC, Drivers and TIA•Silicon PIC: 2.7x11.5 mm2
C. Doerre, et al., OFC 2014
Photonic Integration : Photonic Integration : InPInP vsvs Si Photonics Si Photonics
PlatformsPlatforms
InP platform Si-photonics platform
Functionality Source, Detector, Waveguide, Modulator
Detector, Waveguide, ModulatorMassive electronic integrationNo source: need for InP hetero-integration or Ge sources
Performance Excellent optical performanceNo large scale integration with electronics
Good optical performanceLarge scale integration with electronics for ‘free’electronics for ‘free’
Footprint Large for passive elements (AWG, ring resonators, etc)
Compact for passive elements (AWG, ring resonators, etc)
Cost Higher due to individual device testing,
Low yield for PICs
Wafer scale testingCMOS processing & monitoring for ‘free’Foundry model for volume production will drive cost down
Power consumption
Low for electro-absorption modulator, higher for Mach-Zehnder type modulator
Novel modulator design results in low drive voltage
Our Vision on Silicon PICsOur Vision on Silicon PICs
► Silicon photonics approach:
� Mature CMOS fabrication process
� Available key building blocks: modulators, detectors, low loss passive waveguides,
wavelength multiplexers/demultiplexers
� Lack of efficient lasers sources on silicon
► Sources for silicon photonics
� Ge on silicon lasers and Epitaxy of III-V layers on silicon through a buffer layers: very
promising results, but still requiring developmentspromising results, but still requiring developments
� Hybrid III-V/Si integration using wafer bodning: most efficient solution today
► Hybrid III-V/Si integration combing advantages of III-V and Si
� III-V: providing optical gain
� Si: providing wavelength selection and tuning using passive silicon waveguides
� Dies to wafer or wafer to wafer bonding proven to be a reliable process for SOI wafers
� => a new classe of tunable lasers with large tuning range, high SMSR and compact size
� = > PIC transmitter integrating tunable lasers and silicon modulators
Page 26
Heterogeneous integrationHeterogeneous integration
Growth of the III-V wafers
III-V die or wafer bonding on SOI (unprocessed) InP substrate
removal
Processing of SOI wafers (modulators, detectors, passive waveguides, etc.)waveguides, etc.)
Metallization of lasers, modulators and detectors
Processing of III-V dies/wafer
Growth of IIIGrowth of III--V wafers for hybrid integrationV wafers for hybrid integration
InP (n)
SCH
MQW
SCH
Growth of active layer in a reverse order compared to classical InPdevices
Example of a 6 QW MBE grown wafer
Page 28
•Strained MQW InGaAsP/InP for 1.3 and 1.5 µm operation using MBE•Strained MQW InGaAlAs/InP for 1.3 operation using MOVPE
SCH
InP (p) cladding
InGaAs contact
Substrate
ProcessingProcessing of SOI wafersof SOI wafers
SOI substrate
1-Processed SOI substrate: etching and
implantation of silicon waveguide
Typical thickness of silicon waveguides for
coupling with III-V waveguides between 400
and 500 nm
Page 29
and 500 nm
2- PECVD silica deposition
3- CMP planarization
Typical thickness of silica above RIB silicon
waveguide between 30 and 100 nm
IIIIII--V / Si heterogeneous integration: wafer bondingV / Si heterogeneous integration: wafer bonding
PECVD silica deposition
Thin layer 10 nm
(roughness < 0.5 nm RMS)
III-V heterostructureSOI wafer Low temperature bonding
Page 30
Annealing and Substrate
removal
Bonded IIIBonded III--V wafers/dies on SOI V wafers/dies on SOI
Wafer to wafer bonding Dies to wafer bonding
Page 31
Bonding of IIIBonding of III--V dies on SOI waferV dies on SOI wafer
III-V dies
SiO2 BOX
Si waveguide
ProcessingProcessing of IIIof III--V lasers on V lasers on siliconsilicon
Laser cutting of 8’’ wafers into 3’’ wafers, ready to be processed in a III-V foundry
Hybrid laser structureHybrid laser structure
► Straight active section, typically 2- 3µm width , for optical amplification
► Passive SOI rib waveguides
► Double taper structure for both InP and Si waveguides or single taper structure for
Si waveguide to efficiently couple light from III-V to silicon
M. Lamponi, et al., IEEE PTL, Jan. 2012
Power vs current of a FabryPower vs current of a Fabry--Perot samplePerot sample
at 1.3 µm (InGaAlAs/InP)at 1.3 µm (InGaAlAs/InP)
► Threshold current of 12mA at room temperature for 500 µm devices
► Maximum out power at 20°C: 10 mW at CW conditions and 16 mW for
I = 150 mA at pulse conditions
► Operating up to 80° at CW conditions
► Still reflections in the III-V/Si waveguide transition areas
Page 35
Power Power vsvs current of a current of a FabryFabry--Perot sample at 1.5 Perot sample at 1.5
µm (µm (InGaAsPInGaAsP//InPInP))
4
6
8
10
12
14
Pho
tod
iod
e co
uple
d o
utp
ut p
ow
er (m
W) 15°C
20°C
30°C
40°C
50°C
60°C
70°C
80°C
► Threshold current: 23mA at room temperature for 800 µm devices
► Maximum out power at 20°C: 18 mW at CW conditions
► Operating up to 65° at CW conditions
► Still reflections in the III-V/Si waveguide transition areas
Page 36
0
2
4
0 50 100 150 200
Pho
tod
iod
e co
uple
d o
utp
ut p
ow
er (m
W)
Current (mA)
TunableTunable lasers with 45 nm tuning rangelasers with 45 nm tuning range
Heater/Ring resonator 2Gain section Grating
couplerHeater/Ring resonator 1
A. Le Liepvre, et al., GFP Conference, Aug. 2012
WavelengthWavelength selectableselectable laserlaser
►Wavelength selectable
source :
� Si AWG inside the laser
cavity as a filter
� Broadband bragg
reflectors for feedback
� Si AWG : 5 channels, � Si AWG : 5 channels,
400GHz spacing
� Vertical bragg gratings for
on wafer scale testing
Page 38
Simple wavelength tuning for access networksCan also be used as multi-wavelength source
WavelengthWavelength selectableselectable laser : laser : spectrumspectrum
� Spectrum for each channel with 110mA injection
� Single mode operation with > 30 dB SMSR
� 390GHz spacing between channels
-20
-10
0
Po
we
r co
up
led
in f
ibre
(d
Bm
)
L5 I=110mA
L4 I=110mA
Page 39
-80
-70
-60
-50
-40
-30
1480 1500 1520 1540 1560 1580 1600
Po
we
r co
up
led
in f
ibre
(d
Bm
)
Wavelength (nm)
L3 I=110mA
L2 I=110mA
L1 I=110mA
-80
-70
-60
-50
-40
-30
-20
-10
0
1514 1516 1518 1520 1522 1524
Po
we
r co
up
led
to
fib
re (
dB
m)
Wavelength (nm)
Spectrum for each channel
TunableTunable transmitter chiptransmitter chip
III-V waveguideBack Bragg reflector
Front Bragg reflector
Silicon MZ modulator Output waveguideHybrid III-V/Si laser
Page 40
Laser Ring resonator
Mach-Zehnder Modulator
G. –H. Duan, et al., ECOC 2012
λλλλ1 λλλλ2
λλλλ3 λλλλ4
-2
-3
Log(B
ER
)
Ref.λ1λ2λ3λ4λ5λ6λ7
BER and eye BER and eye diagrammediagramme at 10 at 10 GbGb/s/s
Page 41
λλλλ5 λλλλ6
λλλλ7 λλλλ8
-4
-5
-6
-7-8-9
-10-32 -30 -28 -26 -24 -22 -20 -18 -16
Log(B
ER
)
Received Power (dBm)
λ7λ8
Technology roadmapTechnology roadmap
Design &
Demonstrators
Photonic PDK
Photonic IP
libraries
4x25G Active optical cable
4x100 G WDM transceiver
2 Tb/s WDM transceivesr
Optical Network on Chip
Building blocks
Design & integration
Plasmonics
High temperature
laser
Low power 40G modulator
Avalanche photodiode
Photonic Electronic integration
Complete Design flow
2013 2015 2017
AcknowledgementsAcknowledgements
► European projects:
� Plat4M, Fabulous, Sequoia
► French national projects:
� ANR Ultimate (QPSK QAM transmitter)
► III-V Lab:
� A. Accard, P. Kaspar, F. Poingt, D. Make, F. Lelarge, G. Levaufre, N. Girard, C. Jany,
A. Le Liepvre, M. Lamponi, A. Shen, R. Brenot, F. Mallecot
Page 43
A. Le Liepvre, M. Lamponi, A. Shen, R. Brenot, F. Mallecot
► CEA:
� S. Olivier, S. Malhuitre, S. Messaoudene, D. Bordel, and J.-M. Fedeli, C Kopp, B.
Ben Bakir, L. Fulbert
► IEF:
� L. Vivien, D. Morini