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H. Choukri, A.Fischer, S. Forget, S. Chénais, M.-C.
Castex,Lab. de Physique des Lasers, Univ. Paris Nord, France
Color-control (including White) in Color-control (including White) in OLEDs by shifting the position of OLEDs by shifting the position of an ultrathin yellow layer in a blue an ultrathin yellow layer in a blue
matrix.matrix.
Color-control (including White) in Color-control (including White) in OLEDs by shifting the position of OLEDs by shifting the position of an ultrathin yellow layer in a blue an ultrathin yellow layer in a blue
matrix.matrix.
D. Adès, A. Siove, Lab. Biomateriaux et Polymères de Spécialité, Univ. Paris Nord, France
N.Lemaitre, B. GeffroyLab. Cellules et Composants, CEA Saclay, France
2CLEO ’06 – Long Beach (USA)
WHITE oleds
WHITE oleds applicationsSolid-state LIGHTING : efficient and energy-saving
large areas (≠ inorganic leds) and potentially flexible devices :
new paradigm in lighting
Pixels or backlight panels for DISPLAYS
Demanding requirements to compete with fluorescent and incandescent
light bulbs : 1) 100% internal quantum efficiency (phosphorescent
materials ?)
2) Low operational voltages and power consumption ( p and n-doped
injection layers ?)
3) efficient and reliable color-mixing schemes to achieve white
3CLEO ’06 – Long Beach (USA)
INTRODUCTION
Getting white from OLEDs :
Down-Conversion (Blue OLED + Phosphors) Using exciplex/excimer emission Mixing basic colors in a single layer (« doping ») Mixing colors obtained in separate regions
engineering of the recombination zone microcavity effects
4CLEO ’06 – Long Beach (USA)
INTRODUCTION : underlying concepts
Mixing two complementary colors in appropriate proportions : blue + yellow
« doping strategy » = mixing a small proportion (typ. <5%) of yellow emitter in a blue matrix → accurate control of weak doping levels difficult
Alternative : Including an ultrathin yellow layer in a blue matrix : better control of the thin film deposition
Varying different parameters (thickness, position) to finely tune the color
5CLEO ’06 – Long Beach (USA)
STRUCTURE of the OLEDs
+
Glass substrate
Anode ITO
HIL HTL
ETL
Cathode (Al+LiF)EL (blue) EL (yellow)
Thin film deposition by thermal evaporation under high vacuum (10-7
torr)
Anode
ITO
100-150nm
Cathode
+ + ++
+
- - - --
LUMO
HOMO
CuPc
10 nm
ET
L
NPB
50 nm
DPVBi : Rubrène
60-e : e nm
Alq3
10nm
LiF / Al
1.2 / 100nmH
IL
HT
L
Blu
e E
mit
ter
Blu
e E
mit
ter
Yel
low
Em
itte
r
+
2.4
2.8
2.8
5.4
5.9 5.9
5.7
3.0
2.9
4.7 5.3
3.6
3.2
5.4
6CLEO ’06 – Long Beach (USA)
350 450 550 650 750
Wavelength
Inte
nsity
(A
.U.) absorption
Photoluminescence
Photoluminescence
CHEMISTRY
Well-known materials :
CuPcAlq3
NPB
N
N
N
N
N
N
NN
Cu
N
O
AlO
N
O
N N N
DPVBi
Rubrene
Transporting layersEmitting layers
Anode
ITO
100-150nm
Cathode
+ + ++
+
- - - --
LUMO
HOMO
CuPc
10 nm
ET
L
NPB
50 nm
DPVBi : Rubrène
60-e : e nm
Alq3
10nm
LiF / Al
1.2 / 100nm
HIL
HT
L
Blu
e E
mit
ter
Blu
e E
mit
ter
Yel
low
Em
itte
r
+
Efficient Förster energy transfer
(Blue)
(Yellow)
7CLEO ’06 – Long Beach (USA)
WHITE OLEDs : principle
Anode
ITO
100-150nm
Cathode
+ + ++
+
- - - --
LUMO
HOMO
CuPc
10nm
ET
L
NPB
50 nm
DPVBi : Rubrène
60-e : e nm
Alq3
10nm
LiF / Al
1.2 / 100nm
HIL
HT
L
Blu
e E
mit
ter
Blu
e E
mit
ter
Yel
low
Em
itte
r
Exciton diffusion + Förster transferExciton formation
Yellow + Blue = White
2.4
2.8
5.4
5.9
5.4
5.7
3.0
2.9
4.7
5.3
3.6
3.6
5.3
3.2
8CLEO ’06 – Long Beach (USA)
Influence of the total thickness
Design of the OLEDs - part 1Taking into account microcavity effects = locating the recombination zone at an antinode for blue and yellow eigenmodes
ITO[150] CuPc[10] NPB[45.5] Ru[1] NPB[3.5] DPVBi[x] Alq3[10] Al[100]
Balanced white Al
mirrorITO/glass interface
blueyellow
9CLEO ’06 – Long Beach (USA)
Experimental determination of optimum thickness
ETFOS© software
0
0,2
0,4
0,6
0,8
1
1,2
0 50 100 150 200 250 300
DPVBi thickness (x, in nm)
Norm
aliz
ed
Lum
ina
nce (
A.U
.)
simulation
experimental data
60 nm 140 nm 230 nm
350 450 550 650 750
Wavelength (nm)
350 450 550 650 750
Wavelength (nm)
350 450 550 650 750
Wavelength (nm)
Etfos© software
10CLEO ’06 – Long Beach (USA)
Influence of the rubrene thickness
Design of the OLEDs - part 2Variation of the rubrene thickness e [1-10 nm]
NPB [50 nm]
Ru [e nm]
DPVBi + Ru [60 nm]
[5 nm] [(55 – e) nm]
0
0,5
1
1,5
2
2,5
3
3,5
0 2 4 6 8 10 12
Rubrene thickness (e, in nm)
Exte
rna
l Qua
ntu
m e
fficie
ncy
ηext (%
)
Optimal Rubrene thickness :
~1 nm
→ « monolayer »
17 Å
7 Å
Rubrene molecule
14 Å
11CLEO ’06 – Long Beach (USA)
Anode
ITO
100-150nm
Cathode
+ + ++
+
---
-
LUMO
HOMO
CuPc
10nm
ET
L
NPB
50 nm
DPVBi : Rubrène
60-e : e nm
Alq3
10nm
LiF / Al
1.2 / 100nm
Ene
rgy
HIL
HT
L
Blu
e E
mit
ter
Blu
e E
mit
ter
Yel
low
Em
itte
r
Possible explanations : 1) electrons are trapped when rubrene thickness e exceeds the monolayer width poor e-/holes balance at the interface
2) Concentration Quenching of excitons in neat rubrene
-
Influence of the rubrene thickness
e
12CLEO ’06 – Long Beach (USA)
Influence of the rubrene position
Design of the OLEDs - part 3Variation of the rubrene position d [-10 ► +20 Variation of the rubrene position d [-10 ► +20 nm]nm]
NPB [50 nm] DPVBi [60 nm]●d = 0 +-
Ru [1 nm]▲
Variation of the OLED color from pure yellow (Rubrene) to pure blue (DPVBi) via white
13CLEO ’06 – Long Beach (USA)
Influence of the rubrene position
NPB [50 nm]
DPVBi [60 nm]
d = 0 +-
Ru [1 nm]▲
d = -10 nm
Color Spectrum CIE x,y Performances
ηext = 3.4 %
1.2 lm/W
2275 cd/m²
@60mA/cm²
Anode
CathodeVariation of the rubrene Variation of the rubrene position d [-10 ► +20 nm]position d [-10 ► +20 nm]
14CLEO ’06 – Long Beach (USA)
Influence of the rubrene position
NPB [50 nm]
DPVBi [60 nm]
d = 0 +-
Ru [1 nm]▲
d = -5 nm
Color Spectrum CIE x,y Performances
ηext = 1.7 %
0.9 lm/W
1700 cd/m²
Anode
CathodeVariation of the rubrene Variation of the rubrene position d [-10 ► +20 nm]position d [-10 ► +20 nm]
15CLEO ’06 – Long Beach (USA)
Influence of the rubrene position
NPB [50 nm]
DPVBi [60 nm]
d = 0 +-
Ru [1 nm]▲
d = -3.5 nm
Color Spectrum CIE x,y Performances
ηext = 1.7 %
1.1 lm/W
1795 cd/A
Variation of the rubrene Variation of the rubrene position d [-10 ► +20 nm]position d [-10 ► +20 nm]
Bright white : CIE coordinates x= 0.32 ; y=0.33
Color Rendering Index = 73
16CLEO ’06 – Long Beach (USA)
Influence of the rubrene position
NPB [50 nm]
DPVBi [60 nm]
d = 0 +-
Ru [1 nm]▲
d = -3 nm
Color Spectrum CIE x,y Performances
ηext = 1.4 %
0.9 lm/W
1689 cd/m²
Variation of the rubrene Variation of the rubrene position d [-10 ► +20 nm]position d [-10 ► +20 nm]
Anode
Cathode
17CLEO ’06 – Long Beach (USA)
Influence of the rubrene position
NPB [50 nm]
DPVBi [60 nm]
d = 0 +-
Ru [1 nm]▲
d = 0 nm
Color Spectrum CIE x,y Performances
ηext = 1.25 %
1.2 lm/W
1600 cd/m²
Anode
CathodeVariation of the rubrene Variation of the rubrene position d [-10 ► +20 nm]position d [-10 ► +20 nm]
18CLEO ’06 – Long Beach (USA)
Influence of the rubrene position
NPB [50 nm]
DPVBi [60 nm]
d = 0 +-
Ru [1 nm]▲
d = 5 nm
Color Spectrum CIE x,y Performances
ηext = 2.6 %
2.5 lm/W
4067 cd/m²
Anode
CathodeVariation of the rubrene Variation of the rubrene position d [-10 ► +20 nm]position d [-10 ► +20 nm]
19CLEO ’06 – Long Beach (USA)
Influence of the rubrene position
NPB [50 nm]
DPVBi [60 nm]
d = 0 +-
Ru [1 nm]▲
d = 10 nm
Color Spectrum CIE x,y Performances
ηext = 2 %
1 lm/W
1700 cd/m²
Anode
CathodeVariation of the rubrene Variation of the rubrene position d [-10 ► +20 nm]position d [-10 ► +20 nm]
20CLEO ’06 – Long Beach (USA)
Influence of the rubrene position
NPB [50 nm]
DPVBi [60 nm]
d = 0 +-
Ru [1 nm]▲
d = 20 nm
Color Spectrum CIE x,y Performances
ηext = 2.8 %
1.1 lm/W
1900 cd/A
Anode
CathodeVariation of the rubrene Variation of the rubrene position d [-10 ► +20 nm]position d [-10 ► +20 nm]
21CLEO ’06 – Long Beach (USA)
Anode
Cathode
+ + +
+
+
- -
-
-
CuPc
10nm
NPB
50 nm
DPVBi : Rubrène
60-e : e nmAlq3
10nm
LiF / Al
1.2 / 100nm
-
Rubrene into NPB is better
d = +20 nmx,y = (0.174 ;
0.151)ηext = 2.8 %
d = -10 nm
x,y = (0.172 ; 0.147)ηext = 3.4
%
Anode
Cathode
+ + +
+
+
--- -
CuPc
10nm
NPB
50 nm
DPVBi : Rubrène
60-e : e nmAlq3
10nm
LiF / Al
1.2 / 100nm
-
Rubrene in NPB : No hole
trapping
Rubrene in DPVBi : electron trapping
Comparison of two BLUE diodes with identical CIE x,y :
22CLEO ’06 – Long Beach (USA)
Influence of the rubrene position
Estimation of the exciton diffusion length
Simple exciton diffusion model :
Peak rubrene intensity exp(-d/Ld)► Width of recombination zone ~ 15 nm
23CLEO ’06 – Long Beach (USA)
Influence of the rubrene position
Summary :NPB [50 nm] DPVBi [60 nm]●
d = 0 +-
Ru [1 nm]▲
24CLEO ’06 – Long Beach (USA)
Conclusion
We show that we can finely control the OLED color by tuning the position and thickness of a thin layer of pure Rubrene in DPVBi
We obtain very good WHITE Oled with CIE coordinates of (0.32 ; 0.33)and CRI > 70
Same kind of design with three colors (R, G, B) could pave the way toward full color control of OLED in a given chromatic gamut.
25CLEO ’06 – Long Beach (USA)
Electrical characterization
YELLOW OLED
e=1nm d=0nm (DPVBi)
BLUE OLED
e=1 d=-10 (NPB)
WHITE OLED
e=1 d=-3.5 (NPB)