L’Elettronica di Potenza come principale fattore abilitante dell'energia ecosostenibile

e della mobilità elettrica.

Ruolo di STMicroelectronics

F. Di Giovanni, G. Di Marco, F. Di Franco

STMicroelectronics

DIPARTIMENTO di

INGEGNERIA

ELETTRICA ELETTRONICA

E INFORMATICA

Giovedì 18 marzo 2021

14:30 – 16:00

Agenda

2

14:30 - 14:35 Introduzione al seminario (Prof. Rizzo, Prof. Scelba)

14:35 - 15:45 L'Elettronica di Potenza come principale fattore abilitante per una maggiore efficienza energetica (Ing. Di Giovanni, Ing. Di Franco, Ing. Di Marco)

▪ Breve video STMicroelectronics – Catania (Ing. Di Marco)

▪ Seminario – parte prima (Ing. Di Giovanni)

▪ Video (1) su tecnologia GaN (Ing. Di Marco)

▪ Seminario – seconda parte (Ing. Di Giovanni)

▪ Video (2) su esempi applicativi dell’elettronica di potenza (Ing. Di Franco)

▪ Domande dai partecipanti

15:45 - 16:00 Conclusioni

Power & Energy

3

might be peanuts if it represents “unexpected” government

taxation on bank accounts but…

in energy conversion it matters much more!1%

Understanding the impact of global energy consumption

Assuming 1% efficiency improvement in Industrialelectricity consumption, we will get a total

energy saving of 93,6 TWh

Sources: IEA (International Energy Agency), STMicroelectronics

Transportation 2%

Electricity Consumption by Sector

9.362,1 TWh

MMBOe: Million Barrels of Oil Equivalent; toe: tonnes of oil equivalent; tce: tonnes of coal equivalent

22.315 TWh: total worldwide electricity consumption (2018)

4

An average nuclear plant has a capacity of 0.7 GW,

so output in one full year is almost 6 TWh

Therefore, the total energy saving equals that of

(93.6 / 6) ~ 15 nuclear plants!

8.048.153 toe 55,1 MMBOe 32.982.672 T CO2e 11.497.361 tce

Power electronics: 21st century challenges

Higher efficiency systems

Electric Vehicles & efficient

Infrastructure

Efficiency improvement

Increased pollution in

cities & higher energy

concentration

Higher energy

demand

Population growth Mega cities

CO2 emission

/ air pollutionLimited resources

of Fossil energies

An evolving world creates new challenges and opportunities for power electronics. The solution is efficiency

60% higher global electricity

demand in 2050

5

Renewable

Technologies

Challenging requirements of modern power electronics devices

6

•Efficiency

•Switching frequency

•Power density

•Thermal dissipation

PERFORMANCES

•Wide operating T range

•Humidity

•Vibration

•Exhaust gases

•Cosmic ray hardness

ENVIRONMENT

•Over voltage

•Over temperature

•Power cycling

•Over current

•short circuit

ROBUSTNESS

•Long product lifetime

•Full traceability

QUALITY

Properties of power semiconductors

7

SiC and GaN exhibit unique properties complementing each other

Si SiC-4H GaN

Bandgap

(eV)

Electron mobility μn

(cm²/V s)1450 900 2000

Breakdown Electric

Field Ebr (MV/cm)0.3 3 3.5

Saturation electron

drift velocity vs

(107 cm/sec)1 2.2 2.5

Thermal Conductivity Θ

(W/cm K)1.5 3.8 1.3

3.4 eV3.2 eV1.1 eV

Benefits of WBG in power

conversion

• Less heat: high conversion efficiency

• High frequency: smaller passive

components

• High power density: miniaturization

• High-temperature tolerant: reliable

operation in hostile environments

For an EV: longer ranges,

increased performance, reduced

weight, less cooling system

requirements, less stress on

batteries

WBG = Wide-bandgap

Silicon carbidemanufacturing challenges vs. Silicon

SiC has higher intrinsic material defectiveness that

propagates during substrate manufacturing…

…leading to a more complex manufacturing flow

to achieve quality and reliability

Annealing

(Vs. 800° Si)

>1700°CIon Implantation

(Vs. 25° Si)

500°C

Harder etching phase

(similar to diamond)

More accurate photolithography to

define dopant shape

Silicon Carbide is a “harder” material and requires a more

sophisticated manufacturing process at certain key diffusion steps

Wafer

Mask

Physical defect mapping

at wafer level

Electrical testing to verify

mapped defectiveness area

Defect

SiC Ingot Manufacturing Sawing Process

SiC

Carrot

Si C

SiC Seed

Sublimation

SiC Wafer Testing

Seed defectiveness

propagation

R&D and Manufacturing synergy to materialize SiC material advantages… 8

Power transistorsmarket outlook by major applications

Industrial

1.6%

Automotive

13.4%

Power Transistors Market [M$] by macro technologies

CAGR

(2019-25)

CAGR 2019-25:+ 2 . 9%

0

2000

4000

6000

8000

10000

12000

14000

16000

18000

20000

2019 2020 2021 2022 2023 2024 2025

LV MOSFET (up to 200V) HV MOSFET SiC MOSFET

GaN power transistor IGBT IPM MOSFET based

IPM IGBT based Power Module (all) Power Bipolar

Power Transistors by major applications

2020 WW Global Market

Sources:

OMDIA – SiC & GaN Power Semiconductor Report (June 2020)

OMDIA - Power Discrete and Module Market tracker – final 2019 (Jan 2021 edition)

Automotive24%

Industrial43%

Consumer31%

Others2%

9

2019 2028

Modules

MOSFETs

Diodes

Wide bandgap market outlook

2019 2028

Others

Traction

Aerospace and Military

PV inverters

Industrial Motor Drives

EV charging stations

Commercial vehicles

HEV/EV

UPS

Power supplies

SiC

GaN

2019 2028

Others

Aerospace and Military

PV inverters

Industrial Motor Drives

EV charging stations

Commercial vehicles

HEV/EV

UPS

Power supplies

By Application By Product

2019 2028

Modules

Transistors

983.7 M$

4831.5 M$

CAGR(19-28) : 25.5%

983.7 M$

4831.5 M$

137.3 M$

1425.3 M$

CAGR(19-28) : 39.7%

137.3 M$

1425.3 M$

Source: IHS – SiC & GaN Power Semiconductor Report (May 2019), mid case. 10

STPOWERSt’s 10-year longevity commitment program ensures continuous supply on power products

Industrial

Motor

HV MOSFET(250V to 1700V)

IGBT(600V to 1700V)

SiC MOSFET(650V to 1700V)

Technologies enabling innovation in Industrial and Automotive

Gaming &

Adapter

Charging

Station

LED

LightingSolar

Inverter

Air-

conditioningWashing

Machine

Solar

Inverter

Induction

Heating EV Charger

UPSPower

Supply

Traction Traction DC-DC,

OBC

DC-DC,

OBC

Thermal

Systems

Power GaN HEMT*(100V, 650V)

UPS

Power

Supply

DC-DC,

OBC

LED

Lighting

Solar

Inverter

Adapter

Power

Supply

Wide Bandgap based products Silicon based products

Silicon High Voltage

MOSFET, IGBT

Silicon Carbide MOSFET

PowerGaN HEMT**

Modules (IPM, PM)***

* The enhanced product portfolio includes devices from Exagan in which ST holds a majority stake

** HEMT = High Electron Mobility Transistor

*** IPM = Intelligent Power Module, PM = Power Module11

STPOWER advanced packagingtechnology overview

Investments in advanced package technologies

Leadless packagesPermeation of leadless package enablers for miniaturization

PowerFLAT

Bare Dice For high-temperature or customer in-house assemblies

Leaded packagesStandard packages that benefit from economy of scale

DPAK

Tested cut/uncut

wafer

Tested dice in

T&R

Top-side cooling SMD packageSMD packages that allow direct connection to heatsink

Multi-sintering packageHigh reliability, high power density, sintering on heat sink

Modular packageMulti-purpose configurations, high power, top-side cooling

HU3PAK*

STPAK*

ACEPACK* SMIT

TO-LL

TO247-4L H2PAKSOT223-2L

2SPAK

* registered and/or unregistered trademarks of STMicroelectronics International NV or its affiliates in the EU and/or elsewhere 12

STPOWER module portfoliofrom silicon to WBG options

Home Appliances Motor Drive, E-MobilityEnergy Conversion &

Storage

Intelligent Power ModulesSLLIMM*

(IGBT, Silicon MOSFET options)

High current scalability to cover a wider power range

30 W 340 kW3 kW500 W 5 kW

Washing

Machine

Air

ConditioningFridge Electric Motor,

Charging Station

Motor Pump,

Air-con (auto)Solar Inverter

Power ModulesACEPACK*

(Silicon MOSFET, IGBT, Silicon Carbide MOSFET option)

Adaptable Compact Easier Package

E-Mobility

Typical Application Examples

Traction

150 kW10 kW 30 kW

DC-DC, OBCRoller

shutter

* registered and/or unregistered trademarks of STMicroelectronics International NV or its affiliates in the EU and/or elsewhere 13

1 Hz 10 Hz 100 Hz 1 kHz 10 kHz 100 kHz 1 MHz 10 MHz

Higher power is achieved through

modular deployment or paralleling devices

Operating frequency [Hz]

Sys

tem

po

we

r le

ve

l [W

]

Si IGBT

Si HV MOSFET*

SiC MOSFET

GaN

Transistor

1 MW

100 kW

10 kW

1 kW

100 W

1 W

10 W

Silicon and wide-bandgappower technology positioning

A wide-ranging product offer targeting automotive and

industrial power applications

Manufacturing

strategy

200mm

200mm

200mm

150mm300mm

(*) 300mm: studying future technology expansion for Silicon High Voltage Power MOSFET

200mm

Examples of power applications coverage

Si = Silicon; HV = High Voltage; SiC = Silicon Carbide

Industrial Automotive

Si HV

MOSFET

SMPS, server and telecom, DC-DC converter, low-

power motor control, OBC, charging station, …

Si

IGBT

HV motor control, home appliance, UPS, welding,

induction heating, traction inverter, …

SiC

MOSFET

High power DC-DC Converter, UPS, charging station,

main traction inverters, OBC, …

GaN HEMT

Transistor

SMPS, telecom power, DC-DC converter, OBC, PV

inverters, LiDAR, …

14

Efficiency / Stand-by

• Optimization of existing Silicon

• WBG technologies (SiC & GaN)

• Smart-Controllers

Power Density & Integration

• Embedded galvanic isolation

• System in Package (SiP)

• Innovative packages

Flexibility & advanced features

• Digital Power Controller

Green Energy Generation

Energy Distribution

Energy Storage

Energy Consumption

Efficient solutions through highly efficient semiconductors

...along the energy chain ...in ST solutions

Power electronics efficiency is key for industrial

15

Propulsion

Inverter

Electrical Power

GenerationPower Conversion

Electrical Power

Distribution

Not only industrial but also avionic and space

Hybrid Aero-Vehicles & E-VTol

16

NASA mission to Mars

Perseverance Rover searching for past microbial remnants 17

Semiconductors are sensitive to

cosmic radiation, from the sun

and from out of deep space. On

earth main interacting particles

are neutrons

Radiation on Mars is significantly

higher than on earth because of

no magnetosphere and very thin

atmosphere. Solar flares are also

very intense. Radiation exposure

on Mars is 2.5 times than on

Space Station

ST has contributed to the mission placing some hi-rel products onboard such as transistors (*),

diodes, voltage regulators and logic ICs, some of them produced in Catania

(*) Used in motor actuators, battery and thermal protection

Major trends in electric vehicle design

Technical trend vs. benefits and challenges

• Battery voltage increase (>= 800V)

• New motor architectures (i.e. axial flux,

synchronous reluctance) and increased

motor speed

• Higher switching frequency (>= 500kHz) and

bi-directional OBC topology

• High level of integration (electronic on motor

and DC-DC + OBC as a single brick)

More power but EMC performance is

an issue and less margin vs.1,200V

Improved power density but more

power in smaller estate implies better

thermal management

Smaller magnetic components but

need of very low switching losses

Increased compactness but harsher

operating conditions

Compound semiconductors represent the best trade-off18

Hybrid and electric vehicles blocks addressed by STPOWER transistors

HV Battery e.g. 400V - 800VM

Traction

Inverter DC-DC Converter

e.g. 800V – 400V

On-Board

Charger

AC

Charging

Air-Con

Compressor

Auxiliary

DC-DC

12V

48V

e.g. 400V or 800V DC link

Fast DC

Charging

PTC

Heater

M

DC +

DC -

e.g.

400V+-

Input Bridge

PFC Stage

Full Bridge LLC

e.g.

800V

Key power technology Focus applications

IGBT Traction, OBC, DC-DC, PTC heater and air-con

SiC MOSFET Traction, OBC and DC-DC converter

HV Si MOSFET OBC, DC-DC converter and exploring traction inverter

Power GaN OBC and DC-DC converter

PM and IPM Traction, OBC, DC-DC converter and air-con

PM = Power Module, IPM = Intelligent Power Module

Main sub-systemsHEV/EV and ecosystem overview

DC-DC

Converter

OBC

Traction

Inverter

19

Main power electronics sub-systemskey facts to know

Major features overview and standardization path

Traction Inverter: Ensure bi-

directional AC-DC or DC-AC

conversion between the

battery and the electric motor

DC-DC Converter: Converts

voltage level to feed other

electronic systems in the

vehicle

On-Board Charger (OBC):

Transforms AC- into DC-

current and transfers it to the

battery, under control of the

BMS

• High level of constraints due to link with motor

and high operating power (100 kW+)

• 15 kHz

• Safety class: ASIL C-D

• High voltage management

• Up to 1 MHz

• Safety class: ASIL B-C

• Strong constraints due to interface with

electrical grid

• Up to 1 MHz

• Electrical standards vary across geographies

• Safety class: ASIL C-D

• Low – strong link with

powertrain system –

differentiation by the

end user

• High – being

implemented

• Medium – still

differentiating OEMs

Design specificitiesMain functions Standard / Commodity

20

Silicon IGBT vs. SiC MOSFET in traction inverters higher efficiency for extra mileage

750 V

DC Bus

250 Miles

Si IGBT SiC MOSFET

Vbus = 400 V 160 kW peak, MI = 0.5

From 2 to 4% higher efficiency

1200 V ~ 5x smaller

semiconductor area

750 V ~ 3x smaller

semiconductor area

Vbus = 750 V 210 kW peak, MI = 0.5

From 3.5 to > 8% higher efficiency

400 V

DC Bus

Inverter Switch

SiC MOSFET “Gen3 (*)”

Si

Si

250 Miles

Inverter Switch

IGBT + Diode

(*) ST technology - Under qualification

SiC

21

4 x lower

TJ < 80% Tjmax

* Typical power losses per switch at peak power: 350 Arms

5x lower

• Topology: 210 kW three-phase inverter

• Tj < 80%*Tjmax at any condition

• 200 Arms continuous, 350 Arms peak

• POUT ≈ peak power 210 kW with MI = 0.95, Cos(phi)= 0.8

≈ 2x lower

Analysis of benefits using 1200V SiC MOSFET switches

22

Losses* IGBT Full SiC 1200 V

Total surface400 mm² (IGBT) +

200 mm2 (diode)120 mm²

Conduction losses* (W) 300 307

Switching losses* (W) 564 143

(S1+D1) Total losses* (W) 864 450

Junction temperature (℃) 134.8 132.4

10 kHz

87.0%88.0%89.0%90.0%91.0%92.0%93.0%94.0%95.0%96.0%97.0%98.0%99.0%

100.0%

0% 20% 40% 60% 80% 100% 120%

Effi

cie

ncy

% loadSiC 1200V Silicon IGBT

SiC outperforms silicon in the most common operating conditions: low and medium load

Impressive die size reduction of SiC vs. IGBT

Silicon-related losses are shared between IGBT and diode while SiC is a single device incorporating a diode

Efficiency at 10 kHz @ % load

SiC MOSFETs allow for smaller power control units (PCU)

23

• 200 ARMS continuous

• DC-link voltage: 750 VDC

• Switching frequency: 10 kHz

• Tfluid = 65°C

With 1200 V

20% 50%

Power

module size

Cooling system size

15%

PCB

6% 20%

1,200 V Silicon-based solution

10%

15%

DC link

15%

0

50

100

150

200

250

300

350

400

450

500

1200V SiC Silicon IGBT 1200V SiC Silicon IGBT 1200V SiC Silicon IGBT 1200V SiC Silicon IGBT

10% 25% 50% 100%

Pow

er[W

]

Load[%] Sum of PcondSum of Psw

Up to 60%

smaller

Up to 80%

smaller

Up to 50%

smaller PCU

Pictures not to scale

Power Loss Comparison at nominal continuous

phase current @ 10 kHz

Traction Inverter: implementation example

Solution evaluation kit:

Target applications:

High Voltage kit for EV/HEV applications based on SiC Power

module and galvanically isolated gate driver

24

SiC MOSFET totem pole digital PFC with SCR

solid-state inrush current limiter

STEVAL-DPSTPFC1

Live sessions

DIPARTIMENTO di INGEGNERIA

ELETTRICA ELETTRONICA

E INFORMATICA

~

3.6 kW Power Factor

Corrector

Power and control boards

STEVAL-DPSTPFC1

Boost

Inductance

Auxiliary Power

SupplyMCU

Power stage

Bulk

CapacitorCurrent

Sensor

SCRSiC MOSFET

High

Frequency

Leg

Low

Frequency

Leg

V line

SCTW35N65G2V

STGAP2S

TN3050H-12WY

STM32F334

VIPER26LD

Topology

Turnkey / simple concept

• Easy to get started

• Flexible for adaptation

• Digital control, STM32

EMC compliant

• Power Factor

• Input Harmonic

• Conductive EMI 55022

Robust and Reliable

• 4 kV Lightning surge / EFT burst

• Full solid-state switching

Compact / reduced BOM

• 4 power switches

• (2 high frequency and

2 low frequency)

+ 1 inductor

Efficient

• 97.5% efficiency

with 3.7% iTHD

~

Summing up

Landing screen

Interleaved Triangular Current Mode (TCM)

Totem Pole PFC

Live sessions

DIPARTIMENTO di INGEGNERIA

ELETTRICA ELETTRONICA

E INFORMATICA

Describe theproblem solved(

more a simple picture to contextualize

speaker will have the opportunity to describe the

problem solved during the live session.

in this example, we use an image to illustrate

the risk of silent electric cars not being heard by

pedestrians)

3-Ch Interleaved

Triangular Current Mode (TCM)

Totem Pole PFC

Introduce thecomponentsof your solutions(simple pictures of the board / system with a

very short

MDmesh M6/DM6 and STM32G4

reference design

for 5G telecom power solutions

STEVAL-TTPPFC01*

* Soon Available

STx36N60DM6-7

MDmesh M6/DM6

Power MOSFET

High

Frequency

STx36N60DM6-7

MDmesh M6/DM6

Power MOSFET

High

Frequency

STx36N60DM6-7

MDmesh M6/DM6

Power MOSFET

High

Frequency

Boost Inductors

Power stage

Low

Frequency

STx47N60DM6-7

MDmesh M6/DM6

Power MOSFET

MDmesh M6/DM6 boost efficiency in soft-switching Totem Pole PFC

33

• TCM Advantages

• Triangular current mode PFC uses soft-switching (ZVS over the full mains period)

• SJ MOSFETs can be used (reverse recovery is not employed)

• Highest efficiency among bridgeless topologies

• Improved EMI performance

• TCM Disadvantages

• More complex driving

• Complex sensing for the inductor current

Iavg

ZVS

achieved

ZVS

achieved

Auxiliary Power

SupplyMCU

Bulk

CapacitorCurrent

SensorV line

Vout

STx36N60DM6-7

MDmesh M6/DM6

Power MOSFET

High

Frequency

STx36N60DM6-7

MDmesh M6/DM6

Power MOSFET

High

Frequency

STx36N60DM6-7

MDmesh M6/DM6

Power MOSFET

High

Frequency

Boost Inductors

Power stage

Low

Frequency

STx47N60DM6-7

MDmesh M6/DM6

Power MOSFET

STM32G4 digitally controlled TCM Totem Pole

34

Auxiliary Power

Supply

VIPer25

Bulk

CapacitorCurrent

SensorV line

Vout

STM32G474

IR2*

Vout_ref

Voltage

ControlVinVout

Vout

Vin

Iout

HF - PWM

Hysteresis current control

& Interleaving

LF - PWM

Control

TCM

Control I/O FFD

&

Current Reference

Generation

IR3*

IL1pk*

IR1*

IL2pk* IL3pk*

Ipk_ref

IL1

Vin

IL2

IL3

Vout

Iout

STM32G474

Control unit

1kW TCM Totem Pole PFC for 5G telecom power solutions Wrap(Simple slide to conclude on the solution

presented)Power supply based on

STEVAL-TTPPFC01

ST overview

We are creators and makers of technology

• One of the world’s largest semiconductor companies

• 2020 revenues of $10.2 B

• 46,000 employees of which 8,100 in R&D

• Over 80 Sales & marketing offices serving over

100,000 customers across the globe

• 11 Manufacturing sites

• Signatory of the United Nations Global Compact

(UNGC), Member of the Responsible Business

Alliance (RBA)

As of December 31, 2020 37

Our strategy stems from key long-term enablers

ST provides innovative solutions

to help our customers

make driving safer, greener

and more connected for everyone

Smart Mobility

ST technology and solutions

enable customers to increase energy

efficiency everywhere and support the

use of renewable energy sources

Power & Energy

ST provides sensors, embedded

processing solutions, connectivity,

security and power management, as

well as tools and ecosystems to make

development fast and easy for our

customers

Internet of Things & 5G

38

Product family focus

Portfolio delivering complementarity for target end markets and synergies in R&D and

manufacturing

Dedicated

Automotive ICs

Analog, Industrial &

Power Conversion

ICs

GP MCU & MPU

Secure MCUs

EEPROM

MEMS &

Specialized

Imaging Sensors

Discrete &

Power

Transistors

ASICs based on

ST proprietary

technologiesPersonal Electronics

Industrial

Automotive

Communications Equipment,

Computers & Peripherals

39

Catania site

ST Catania site

Total parking area 66.200 m2

Total green area 17.105 m2

Clean room 25.435 m2

Covered area 58.500 m2

Total area 210.800 m2

40

Leveraging the Catania ecosystem

Competence HUB Partnering with CNR

…plus more than 20 other co-operations around

the globe with universities and research centers

10-10

Meter resolution

People Processes Facilities

20+ Years Continuous Sharing Environment

Beyond-Nano…

ARM 200the most advanced

European Microscope

Achieving

sub-angstrom

resolution for material

analysis with 3D

representation

Competence

Key success factors:

• Design of experiments for new processes

leading to industrialization

• Sharing of pilot-lines and “ad-hoc” equipment

• Sophisticated analysis skills - vital for new

technology development

• Experts and tools for studying new materials

(*) The National Research Council (CNR) is the largest public research institution in Italy, the only one under the Research Ministry performing multi-disciplinary activities.

41

• Power electronics plays a key role in energy

conversion processes

• Power electronics has same dignity

compared to digital technologies

• Market research foresees a great progression

in power devices usage

• STMicroelectronics is developing and

producing innovative power devices

• ST’s Catania is one of the most important

state-of-the-art sites at global level for power

semiconductor designs

Take away

42

© STMicroelectronics - All rights reserved.

ST logo is a trademark or a registered trademark of STMicroelectronics International NV or its affiliates in the EU and/or other countries.

For additional information about ST trademarks, please refer to www.st.com/trademarks.

All other product or service names are the property of their respective owners.

Thank you