TETYANA TORCHYNSKA CURRICULUM VITAE · 2016 ; Surface and defect modifications in mixture of ZnO and carbon nanocrystals at mechanical processing, T. Torchynska, B. Perez Millan,

TETYANA TORCHYNSKA

CURRICULUM VITAE

DATOS PERSONALES

CORREO

CAMPUS: [email protected]

TELEFONO

CAMPUS: (052) 55.57296000.55031

DESEMPEÑO PROFESIONAL

ADSCRIPCION ACTUAL

02/1999 -

_______ ;

INST. DE EDU. SUP. PUBLICAS, INSTITUTO POLITECNICO NACIONAL / UNIDADES

ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS /

DEPTO. DE CIENCIAS DE MATERIALES, PROFESOR TITULAR ¿C ¿,T.C., PLAZA DE

PROPIEDAD

EXPERIENCIA LABORAL

05/2010 -

10/2010 ;

Institución , INST. DE EDU. SUP. PUBLICAS, PROFESOR INVITADO INSTITUTO FISICA

SEMICONDUCTORES, INSTITUTO TECNOLOGICO DEL MAR, FISICA, FISICA ESTADO

SOLIDO, NANOCIENCIAS, PUNTOS CUANTICOS PARA DIAGNOSTICA DE CANCER,

PROFESOR INVITADO INSTITUTO FISICA SEMICONDUCTORES de Academia Nacional de

Ciencias de Ucrania. Investigacion en area de aplicacion de emission de CdSe/ZnS puntos

cuanticos, bioconjugados a anticuerpos de diferentes formas de canceres, para diagnostica

temprana de cancer,

02/1999 -

_______ ;

Institución , INST. DE EDU. SUP. PUBLICAS, PROFESSOR TITULAR C (EXCELENCIA),

INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /

ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,

PROPIEDADES OPTICOS DE NANO ESTRUCTURAS DE MATERIALS DE GROUPO IV (SI, GE,

SIC), QUANTUM DOT IN A WELL STRUCTURES *DWELL) FOR OPTICAL FIBER LASERS OF

NEW GENERATIONS, QUANTUM DOTS (CDSE/ZNS) AS A BIOSENSORS OF HUMAN

ANTYBODIES, ESFM-IPN, Investigacion optica de nanocristales y puntos cuanticos de

semiconductores de groupos IV (Si, Ge, SiC), III-V (inAs, GaAs) y II-VI (CdSe, ZnS),

07/1996 -

01/1999 ;

Institución , ENTIDADES EXTERNAS, FULL PROFESSOR, JEFE DE DEPARTAMENTO,

ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, NANOCIENCIA DE

SEMICONDUCTORES, FISICA ESTADO SOLIDO, NANOTECHNOLOGIAS, Instituto de Fisica de

Semiconductores de Academia de Ciencias Nacional De Ucrania, Jefe del Departomento de

Optoelectronics,

01/1995 -

03/1995 ;

Institución , ENTIDADES EXTERNAS, VISITING PROFESSOR, HOPITAUX DE PARIS,

OPTOCAL PROPERTIES OF POROUS MATERIALS, NANOSTRUCTURES, QUANTUM DOTS,

Profesor invitado en 6-to Universidad de Paris, Paris, France, Investigacion de los EPR en porous

silicon,

04/1991 -

07/1996 ;

Institución , ENTIDADES EXTERNAS, FULL PROFESSOR, JEFE DE LABORATORIO,

ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, MATERIALES Y DISPOSITIVOS

OPTOELECTRONICOS, FISICA DE ESTADO SOLIDO, FISICA DE DEGRADACION, Instituto

Fisica de Semiconductores de Academia de Ciencias Nacional de Ucrania, Jefe de Laboratorio

"Despositivos Optoelectronicos y Fisica de su degradacion",

06/1984 -

04/1991 ;

Institución , ENTIDADES EXTERNAS, LEADING SCIENTIST INVESTIGATOR, ACADEMICA

NACIONAL DE CIENCIAS DE UCRANIA, FISICA DE SEMICONDUCTORES, MATERIALES

OPTOELECTRONICOS Y DISPOSITIVOS, DEGRADACION, Instituto Fisica de Semiconductores

de Acedemia Nacional de Ciencias de Ucrania, Investigacion de los procesas degradacion de

emisores de luz, laseras, fotodiodas y celdas solares, creacion modeles fisicos y su simulacion

numerica.,

02/1980 -

12/1998 ;

Institución , ENTIDADES EXTERNAS, PROFESOR INVITADO, NATIONAL TECHNICAL

UNIVERSITY, FISICA DE SEMICONDUCTORES, FISICA DE DESPOSITIVOS DE

SEMICONDUCTORES, MATERIALES OPTOELECTRONICOS, Profesor asociado (1980-1984) y

Profesol Titular (1984-1998) en Facultad Radioelectronica Universidad Technica National de

Ucrania -"KPI" , Kiev, Ukraine,

12/1977 -

06/1984 ;

Institución , ENTIDADES EXTERNAS, SENIOR SCIENTIST INVESTIGATOR, ACADEMICA

NACIONAL DE CIENCIAS DE UCRANIA, FISICA DE SEMICONDUCTORES, MATERIALES Y

DISPOSITIVOS OPTOELECTRONICOS, FISICA DE DEGRADACION, Instituto Fisica de

SEmiconductores de Acedemia Nacional de Ciencias de Ucrania, Reacciones de los defectos en

semiconductores estimulados por recombinacion de los portadores inequlibrium,

12/1974 -

11/1977 ;

Institución , ENTIDADES EXTERNAS, ESTUDIO NIVEL DOCTORADO (POST GRADUATE

STUDENT), ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, FISICA DE

SEMICONDUCTORES Y DIELECTRICOS, FISICA DE DESPOSITIVOS DE

SEMICONDUCTORES, DEGRADATION, Instituto de Fisica de Semiconductores de Academia de

Ciencias de Ucrania, Reacciones Fotochemicas en semiconductores II-VI y su coneccion con los

procesas degradacion de materiales y despositivos,

04/1973 -

11/1974 ;

Institución , ENTIDADES EXTERNAS, MAESTRO EN CIENCIAS, NATIONAL TECHNICAL

UNIVERSITY, FISICA DE SEMICONDUCTORES Y DIELECTRICOS, OPTOELECTRONICA,

CIENCIA DE MATERIALES, Departamento FISICA DE SEMICONDUCTORES Y

DIELECTRICOS. Procesos en peliculas de los islantes,

PRODUCCION CIENTIFICA

ARTICULOS

2016 ; Emission of Cu-related complexes in ZnO:Cu nanocrystals,, T.V. Torchynska, B. El Filali, I. Ch. Ballardo

Rodríguez, Physica E, Vol.75, Pag.156-162, Revistas Indizadas ,

2016 ; Surface modification in mixture of ZnO + 3%C nanocrystals stimulated by mechanical processing, T.

Torchynska, B. Perez Millan, G. Polupan, and M. Kakazey, AIMS Materials Science, Vol.3, Pag.204-213,

Revistas Arbitradas ,

2016 ; Surface and defect modifications in mixture of ZnO and carbon nanocrystals at mechanical processing,

T. Torchynska, B. Perez Millan, G. Polupan, and M. Kakazey, Materials Sciencein Semiconductor

Processing, Vol.47, Pag.37-43, Revistas Indizadas ,

2016 ; Defect Related Emission of ZnO and ZnO Cu Nanocrystals Prepared by Electrochemical method, 3 FEB

2016 T. V. Torchynska, B. El Filali, I. Ch. Ballardo Rodríguez and L. Shcherbyna DOI:

10.1002/pssc.201510277, , phys. stat. sol. (c),, Vol. , Pag.13-18, Revistas Arbitradas ,

2015 ; PHYSICAL REASONS OF EMISSION TRANSFORMATION IN INFRARED CDSETE/ZNS

QUANTUM DOTS AT BIOCONJUGATION, ISSN 1386-9477., T. V. Torchynska, Physica E, 68 (2015)

87¿92, ISSN 1386-9477., Physica E, ISSN 1386-9477., Vol.68, Pag.87-92, Revistas Indizadas ,

2015 ; PHOTOLUMINESCENCE AND RAMAN SCATTERING STUDY IN ZNO:CU NANOCRYSTALS,, B.

El Filali, T.V. Torchynska and A.I. Diaz Cano,, J. Luminescence,, Vol.161, Pag.25-30, Revistas Indizadas ,

2015 ; WEAK QUANTUM CONFINEMENT AND POLARITONS IN ZNO AND ZNO CU

NANOCRYSTALS PREPARED BY ELECTROCHEMICAL METHOD,, Tetyana V. Torchynska,

Brahim El Filali, Aaron Israel Díaz Cano, and Lyudmula V. Shcherbyna ,, ECS Transaction, Vol.66,

Pag.267-274, Revistas Arbitradas ,

2015 ; BLUE EMISSION STIMULATION IN MIXTURE OF ZNO AND CARBON NANOCRYSTALS AT

MECHANICAL PROCESSING, ISSN: 1938-5862. ECS TRANS. 2015 66(1): 297-303, Tetyana V.

Torchynska, Brenda Perez Millan, Erick Velazquez Lozada, Mukola Kakazey, and Marina Vlasova, ECS

Transactions, Vol.66, Pag.297-303, Revistas Arbitradas ,

2015 ; PHOTOLUMINESCENCE EMISSION AND STRUCTURE DIVERSITY IN ZNO NANORODS,,

Velázquez Lozada, E., Camacho González, G.M., Torchynska, T, Journal of Physics: Conference Series,,

Vol.582, Pag.12031-0, Revistas Arbitradas ,

2015 ; EPR detection of sphalerite ZnO in mechanically treated ZnO + 0.1C nanosystem", M. Kakazey,

M.Vlasova, E.A.Juarez-Arellano, T.Torchynska, Materials Science in Semiconductor Processing,, Vol.39,

Pag.775-780, Revistas Indizadas ,

2015 ; PHOTOLUMINESCENCE SPECTRUM TRANSFORMATION IN SI RICHSILICON NITRIDE

VERSUS SILICON NITRIDE STOICHIOMETRY, T.V. Torchynska, J.L. Casas Espinola, E. Vergara

Hernandez, L. Khomenkova and A. Slaoui,, Thin Solid Films, Vol.581, Pag.65-69, Revistas Indizadas ,

2015 ; STRUCTURAL AND LIGHT EMITTING PROPERTIES OF SILICON-RICH SILICON NITRIDE

FILMS GROWN BY PLASMA ENHANCED-CHEMICAL VAPOR DEPOSITION, Torchynska, T.V.,

Casas Espinola, J.L., Khomenkova, L., (...), Andraca Adame, J.A., Slaoui, A.,, Materials Science in

Semiconductor Processing,, Vol.37, Pag.46-50, Revistas Indizadas ,

2015 ; PHOTOLUMINESCENCE TREND IN MIXTURE OF ZINC OXIDE AND CARBON

NANOPARTICLES AFTER MECHANICAL PROCESSING, Erick Velázquez Lozada, Tetyana

Torchynska, Jose Luis Casas Espinola, Alejandro Vivas Hernandez, Mykola Kakazey, Marina

Vlasova,Lyudmyla Shcherbyna, Luis Castañeda,, Materials Science in Semiconductor Processing,, Vol.37,

Pag.82-86, Revistas Indizadas ,

2015 ; Structural and Raman scattering studies of ZnO Cu nanocrystals grown by spray pyrolysis,, Brahim El

Filali, T. V. Torchynska, A. I. Díaz Cano and M. Morales Rodriguez, Revista Mexicana de Ingeniería

Química,, Vol.14, Pag.3-9, Revistas Indizadas ,

2015 ; INAS QUANTUM DOT EMISSION AND ANNEALING IMPACT IN QUANTUM WELLS WITH

STRAIN REDUCED LAYERS, Torchynska, T.V., Tamayo, R.C., Polupan, G., Stints, A., Shcherbyna,, J.

Luminescence,, Vol.163, Pag.40-46, Revistas Indizadas ,

2014 ; IMPACT OF CAPPING LAYER TYPE ON EMISSION OF INAS QUANTUM DOTS EMBEDDED IN

INGAAS/ INXALYGAZAS/ GAAS QUANTUM WELLS, ISSN: 0021-8979, T.V. Torchynska, J.L. Casas

Espinola, A. Stinz,, J. Applied Physics,, Vol.115, Pag.14305-0, Revistas Arbitradas ,

2014 ; AN EPR INVESTIGATION OF SIOX FILMS WITH COLUMNAR STRUCTURE, ISSN: 0921-4526,

V. Bratus, I. Indutnyi, P. Shepeliavyi, T. Torchynska, Physica B, ISSN 0921-4526, Vol. , Pag.0-0, Revistas

Arbitradas ,

2014 ; , EMISSION OF INAS QUANTUM DOTS EMBEDDED IN INGAAS / INALGAAS/GAAS QUANTUM

WELLS, ISSN: 0022-2313, R. Cisneros Tamayo, I.J. Gerrero Moreno, G. Polupan, T.V. Torchynska and J.

Palacios Gomez,, J. of Luminescence, ISSN: 0022-2313, Vol.149, Pag.1-6, Revistas Arbitradas ,

2014 ; SIZE DEPENDENT EMISSION STIMULATION IN ZNO NANOSHEETS, ISSN: 0022-2313, T. V.

Torchynska and B. El Filali,, J. of Luminescence,, Vol.149, Pag.54-60, Revistas Arbitradas ,

2013 ; ELECTRONIC EFFECTS IN EMISSION OF CORE/SHELL CDSE/ZNS QUANTUM DOTS

CONJUGATED TO ANTI-INTERLEUKIN 10 ANTIBODIES, ISSN: 0022-2313, A.L. Quintos Vazquez,

T.V. Torchynska, J.L. Casas Espinola, J.A. Jaramillo Gómez, J. Douda, J. of Luminescence,, Vol.143,


2013 ; EMISSION OF CDSE/ZNS AND CDSETE/ZNS QUANTUM DOTS CONJUGATED TO IGG

ANTIBODIES, ISSN 1386-9477, V. Torchynska, J.L. Casas Espinola, A. Díaz Cano, J. Douda, K. Gazarian,,

Physica E, Vol.51, Pag.60-64, Revistas Indizadas ,

2013 ; EMISSION OF DOUBLE CORE INFRARED (CDSETE)/ZNS QUANTUM DOTS CONJUGATED TO

ANTIBODIES,ISSN: 0022-2313, T. Torchynska, J. of Luminescence, Vol.137, Pag.157-161, Revistas

Arbitradas ,

2013 ; PHOTOLUMINESCENCE PECULIARITIES IN INGAAS/GAAS STRUCTURES WITH DIFFERENT

INAS QUANTUM DOT DENSITIES, ISSN: 0022-2313, T. Torchynska, J. of Luminescence,, Vol.136,


2013 ; EXCITON-LIGHT COUPLING AND POLARITONS IN SIC NANOCRYSTALS, ISSN: 1386-9477, M.

Morales Rodriguez, G. Polupan, T.V. Torchynska, Physica E,, Vol.51, Pag.19-23, Revistas Arbitradas ,

2013 ; EFFECT OF ASPECT RATIO ON ENERGY OF OPTICAL TRANSITIONS IN A PYRAMID-

SHAPED QUANTUM DOT, ISSN: 1386-9477, Yu.V. Vorobiev, T.V.Torchynska, P.P.Horley, Physica E,,


2013 ; ``WHITE" EMISSION OF ZNO NANOSHEETS WITH THERMAL ANNEALING, ISSN: 1386-9477,

A.I. Diaz Cano, B. El Filali, T.V. Torchynska, J.L. Casas Espinola, Physica E,, Vol.51, Pag.24-28, Revistas

Arbitradas ,

2013 ; PHOTOLUMINESCENCE VARIATION IN INAS QUANTUM DOTS EMBEDDED IN

INGAAS/ALGAAS QUANTUM WELLS AT THERMAL ANNEALING, ISSN: 1386-9477, I.J. Guerrero

Moreno, T.V. Torchynska, J.L. CasasEspinola, Physica E,, Vol.51, Pag.37-41, Revistas Arbitradas ,

2013 ; PHOTOLUMINESCENCE OF DOUBLE CORE/SHELL INFRARED (CDSETE)/ZNS QUANTUM

DOTS CONJUGATED TO PSEUDO RABIES VIRUS ANTIBODIES, ISSN: 1386-9477, T.V.

Torchynska, J.L. Casas Espinola, J.A. JaramilloGómez, J. Douda, K. Gazarian, Physica E,, Vol.51, Pag.55-59,


2013 ; EMISSION OF CDSE/ZNS AND CDSETE/ZNS QUANTUM DOTS CONJUGATED TO IGG

ANTIBODIES, ISSN 1386-9477, V. Torchynska, J.L. Casas Espinola, A. Díaz Cano, J. Douda, K. Gazarian,

Physica E,, Vol.51, Pag.60-64, Revistas Arbitradas ,

2013 ; SI QUANTUM DOT STRUCTURES AND THEIR APPLICATIONS, ISSN: 1386-9477, L. Shcherbyna,

T.Torchynska, Physica E,, Vol.51, Pag.65-70, Revistas Arbitradas ,

2013 ; STRUCTURE AND EMISSION TRANSFORMATION IN ZNO NANOSHEETS AT THERMAL

ANNEALING, ISSN: 0022-3697, A.I. Diaz Cano, B. El Falali, T.V. Torchynska, J.L. Casas Espinola, J.

Phys. Chem. Solids., Vol.74, Pag.431-435, Revistas Arbitradas ,

2013 ; MODELING OF THE EFFECT OF BIO-CONJUGATION TO ANTI-INTERLEUKIN-10

ANTIBODIESON THE PHOTOLUMINESCENCE OF CDSE/ZNS QUANTUM DOTS, ISBN: 978-1-

60511-594-8,, Tetyana V. Torchynska and Yuri V. Vorobiev and Paul P. Horley, Cambridge University Press,

ISBN: 978-1-60511-594-8,, MRS Proceedings, Vol.1617, Pag.0-0, Memorias de congresos ,

2013 ; EMISSION VARIATION IN CDSE/ZNS QUANTUM DOTS CONJUGATED TO PAPILLOMA

VIRUS ANTIBODIES, ISBN: 978-1-60511-594-8,, Juan A. Jaramillo Gómez and Tetyana V. Torchynska

and Jose L. Casas Espinola and Janna Douda, ISBN: 978-1-60511-594-8, Cambridge University Press, MRS

Proceedings, Vol.1617,, Pag.0-0, Memorias de congresos ,

2013 ; EPR AND EMISSION STUDY OF SILICON SUBOXIDE NANOPILLARS, ISBN: 978-1-60511-594-8,,

V. Bratus¿ and I. Indutnyi and P. Shepeliavyi and T. Torchynska, ISBN: 978-1-60511-594-8, Cambridge

University Press, MRS Proceedings, Vol.1617, Pag.0-0, Memorias de congresos ,

2013 ; SI QUANTUM DOT STRUCTURES AND SOME ASPECTS OF APPLICATION, ISBN: 978-1-60511-

594-8,, Lyudmula V. Shcherbyna and Tetyana V. Torchynska, ISBN: 978-1-60511-594-8, Cambridge

University Press, MRS Online Proceedings, Vol.1534, Pag.0-0, Memorias de congresos ,

2013 ; EMISSION AND HR-XRD STUDY IN INAS QUANTUM DOT STRUCTURES PREPARED AT

DIFFERENT QD¿S GROWTH TEMPERATURES, ISBN: 978-1-60511-594-8,, Leonardo G. Vega

Macotela and Tetyana V. Torchynska, ISBN: 978-1-60511-594-8, Cambridge University Press, MRS Online

Proceedings, Vol.1534, Pag.0-0, Memorias de congresos ,

2013 ; EMISSION MODIFICATION IN ZNO NANOSHEETS AT THERMAL ANNEALING , ISBN: 978-1-

60511-594-8,, Aaron I. Diaz Cano, Brahim El Filali, Tetyana V. Torchynska and Jose L. Casas Espinola,

ISBN: 978-1-60511-594-8, Cambridge University Press, MRS Online Proceedings, Vol.1534, Pag.0-0,

Memorias de congresos ,

2013 ; DOUBLE CORE INFRARED (CDSETE) / ZNS QUANTUM DOTS CONJUGATED TO IGG

ANTIBODIES, ISBN: 978-1-60511-594-8,, Tetyana V. Torchynska, Jose L. Casas Espinola, Chetzyl

Ballardo Rodriguez,Janna Douda and Karlen Gazaryan, ISBN: 978-1-60511-594-8, Cambridge University

Press, MRS Online Proceedings Library, ISBN: 978-1-60511-594-8,, Vol.1534, Pag.0-0, Memorias de

congresos ,

2013 ; COMPARATIVE STUDY OF PHOTOLUMINESCENCE VARIATION IN INAS QUANTUM DOTS

EMBEDDED IN INGAALAS QUANTUM WELLS, ISBN: 978-1-60511-594-8,DOI:

HTTP://DX.DOI.ORG/10.1557/OPL.2013.298, J.L. Casas Espinola, T.V. Torchynska, L. D. Cruz. Diosdado

and G. Polupan ISBN: 978-1-60511-594-8, Cambridge University Press, MRS Online Proceedings Library,

ISBN: 978-1-60511-594-8,, Vol.1534, Pag.0-0, Memorias de congresos ,

2013 ; DOUBLE CORE INFRARED CDSETE/ZNS QUANTUM DOTS CONJUGATED TO PAPILLOMA

VIRUS ANTIBODIES, ISBN: 978-1-60511-594-8,, . J.L. Casas Espinola, T. V. Torchynska, J. A. Jaramillo

Gómez, J. Douda and K. Gazarian ISBN: 978-1-60511-594-8, Cambridge University Press, MRS Online

Proceedings Library, ISBN: 978-1-60511-594-8,, Vol.1534, Pag.0-0, Memorias de congresos ,

2013 ; EMISSION AND STRUCTURE VARIETIES IN ZNO:AG NANORODS OBTAINED BY

ULTRASONIC SPRAY PYROLYSIS, ISBN 978-83-932197-1-1., E. Velázquez Lozada, T.V. Torchynska,

J. L. Casas Espinola and L. Castañeda, ISBN 978-83-932197-1-1., Microthechnology and Thermal

problems in Electronics, MICROTERM 2013, ISBN 978-83-932197-1-1., Vol.1, Pag.239-245, Memorias

de congresos ,

2013 ; PHOTOLUMINESCENCE VARIATION OF INAS QUANTUM DOTS EMBEDDED IN INALGAAS

QUANTUM WELLS AT THERMAL ANNEALING, ISBN 978-83-932197-1-1., J.L. Casas Espinola, T.V.

Torchynska, G. Polupan and D. Diosdado, ISBN 978-83-932197-1-1., Microthechnology and Thermal

problems in Electronics, MICROTERM 2013, ISBN 978-83-932197-1-1., Vol.1, Pag.139-143, Memorias

de congresos ,

2013 ; BLUE SHIFT OF PHOTOLUMINESCENCE OF CDSE/ZNS CORE SHELL QUANTUM DOYS

CAUSED BY BIOCONJUGTION TO ANTI INTERLEUKIN 10 ANTIBODIES, ISBN 978-5-4386-

0145-6, T.V.Torchynska, Yu.V. Vorobiev, P.P.Horley,, Nanostructures: Physics and Nanotechnology,

ISBN 978-5-4386-0145-6, Vol. , Pag.0-0, Memorias de congresos ,

2013 ; PHYSICA E, EDITORIAL, ISSN: 1386-9477, T.V.Torchynska, Yu. Vorobiev, Zs. Horvath,, J. Physica E,,


2012 ; RE-CHARGING THE LUMINESCENT STATES IN CDSE/ZNS QUANTUM DOTS AT THE

CONJUGATION TO OSTEOPONTIN ANTIBODIES,ISSN: 0022-2313, T V Torchynska,, J.

Luminescence,, Vol.132, Pag.1848-1852, Revistas Arbitradas ,

2012 ; RAMAN SPECTRA OF CDSE/ZNS QUANTUM DOTS BIOCONJUGATED TO OVARIAN CANCER

ANTIBODIES, DOI: 10.1557/OPL.2012.284., A.L.Quintos Vazquez, T. V. Torchynska and L. Shcherbyna,

DOI: 10.1557/opl.2012.284., Mater. Res. Soc. Symp. Proc., Vol.1376, Pag.284-292, Memorias de

congresos ,

2012 ; ELECTRONIC EFFECTS IN CDSE/ZNS QUANTUM DOTS CONJUGATED TO IL-10

ANTIBODIES, ISBN-978-1-4665-6276-9, T. V. Torchynska, J.L. Casas Espinola, J. Douda, A.I.Diaz Cano

and O. S. López de la Luz, ISBN: 978-1-4665-6276-9, NANOTECH 2012 Proceeding, Vol.1, Pag.90-93,


2012 ; RAMAN SPECTRA AND EMISSION OF CDSE/ZNS QUANTUM DOTS BIOCONJUGATED TO

OC125 ANTIBODIES, ISSN: 1610-1634, A.L. Quintos-Vazquez, L.G. Vega-Macotela, T.V. Torchynska*

and L. Shcherbyna, phys. stat. solid. (c),, Vol.9, Pag.1627-1629, Revistas Arbitradas ,

2012 ; PHOTOLUMINESCENCE TRANSFORMATION OF CORE/SHELL CDSE/ZNS QUANTUM DOTS

AT THE CONJUGATION TO BIOMOLECULES, DOI: 10.1557/OPL.2012.281, T. V. Torchynska, I. Ch.

Ballardo Rodríguez and Ye. Shcherbyna, DOI: 10.1557/opl.2012.281, Mater. Res. Soc. Symp. Proc.,

Vol.1376, Pag.281-283, Memorias de congresos ,

2011 ; PHOTOLUMINESCENCE STUDY AND PARAMETER EVALUATION IN INAS QUANTUM DOT-

IN-A-WELL STRUCTURES, ISSN: 0921-5107, T.V. Torchynska, A. Vivas Hernandez, G. Polupan, E.

Velazquez Lozada ,ISSN: 0921-5107, Material Science and Engineering B., Vol.176, Pag.331-333, Revistas

Arbitradas ,

2011 ; DISPERSION OF PHOTOLUMINESCENCE PEAK POSITIONS EN INAS QD ASYMMETRIC

MULTI QUANTUM WELL STRUCTURES, ISSN: 1610-1634, J. L. Casas Espínola, T. V. Torchynska, G.

Polupan, and M. Ojeda Martínez, ISSN 1610-1634, phys.stat.solid.(c),, Vol.8, Pag.1388-1390, Revistas

Arbitradas ,

2011 ; ELASTIC STRESS AND EMISSION NONHOMOGENEITY IN INAS QUANTUM DOT DWELL

STRUCTURES, ISSN: 1610-1634, J.L. Casas Espinola, T V Torchynska, J Palacios Gomez, G Gómez

Gasga, A Vivas Hernandez and R. Cisneros Tamayo ISSN 1610-1634, phys.stat.solid. (c)., Vol.8, Pag.1391-

1393, Revistas Arbitradas ,

2011 ; EMISSION RELATED TO EXCITON-POLARITON COUPLING IN POROUS SIC, ISSN: 1610-1634,

T V Torchynska, A. Diaz Cano, J.A. Yescas Hernandez, Yu.V. Vorobiev, L.V. Shcherbyna, ISSN 1610-1634,

phys.stat.solid.(c)., Vol.8, Pag.1974-1977, Revistas Arbitradas ,

2011 ; EXCITON EMISSION STIMULATION AND EXCITON POLARITON COUPLING IN SIC

NANOCRYSTALS, ISSB: 1388-0764, T. V. Torchynska, A.I. Diaz Cano, J. A. Yescas Hernandez and Ye.

Shcherbyna, ISSB 1388-0764, J. Nanoparticle Research,, Vol.14, Pag.19-25, Revistas Arbitradas ,

2011 ; RADIATIVE INTERFACE STATE STUDY IN CDSE/ZNS QUANTUM DOTS COVERED BY

POLYMER, ISSN: 0921-5107, L.G. Vega Macotela, T.V. Torchynska, J. Douda, R. Pena Siera, L.

Shcherbyna ISSN: 0921-5107, Material Science and Engineering B., Vol.176, Pag.1349-1352, Revistas

Arbitradas ,

2011 ; NEW GENERATION OF OPTOELECTRONIC DEVICES BASED ON SI NANOCRYSTALS, T.V.

Torchynska,, IEEE sec. Mexico, Conference ROC&C-2011, Acapulco, 27 Nov.-3 Dic.,2011, IEEE sec.

Mexico, Conference ROC&C-2011, Vol.1, Pag.17-20, Memorias de congresos ,

2011 ; ENERGY SPECTRA OF AN ELECTRON IN A PYRAMID SHAPES QUANTUM DOT IN

EFFECTIVE MASS APPROXIMATION WITH EVEN MIRROR BOUNDARY CONDITIONS, ISBN:

978-960-474-276-9., Yu. Vorobiev, V. Vieira, P. Ribeiro, V. Gorley, P. Horley, J. Gonzales Hernandez, T.

Torchynska, 3rd WSEAS Internaational Conference on Nanotechnology, 2011, NANOTECHNOLOGY¿11,

Cambridge UK, Febrery 20-22, 2011,p. 127-131, Published by WSEAS Press, ISBN: 978-960-474-276-9.,

Nanotechnology, 2011,, Vol.1, Pag.127-131, Memorias de congresos ,

2011 ; ELASTIC STRESS AND EMISSION NONHOMOGENEITY IN SYMMETRIC INAS QUANTUM

DOT-IN-A-WELL STRUCTURES, ISBN 978-83-932197-0-4., T.V. Torchynska, E. Velazquez Lozada,

R.L. Mascorro Alquicira, Elastic Stress and Emission , Microtechnology and Thermal Problems in Electronics,

MICROTHERM 2011, June 28-July 1, 2011, Lodz, Poland, p.310-315. ISBN 978-83-932197-0-4.,

Microtechnology and Thermal Problems in Electronics, MICROTHERM 2011, ISBN 978-83-932197-0-

4., Vol.1, Pag.310-315, Memorias de congresos ,

2011 ; PHOTOLUMINESCENCE AND RAMAN SPECTRUM MODIFICATIONS IN CDSE/ZNS

QUANTUM DOTS AT THE BIOCONJUGATION TO IGG ANTIBODIES, ISBN 978-83-932197-0-4.,

T.V.Torchynska, J.L. Casas Espinola, J. Douda, A. Diaz Cano, K. Gazarian, Microtechnology and Thermal

Problems in Electronics, MICROTHERM 2011, June 28-July 1, 2011, Lodz, Poland, p.58-63. ISBN 978-83-

932197-0-4., Microtechnology and Thermal Problems in Electronics, MICROTHERM 2011,ISBN 978-

83-932197-0-4., Vol.1, Pag.58-63, Memorias de congresos ,

2011 ; CDSE/ZNS QUANTUM DOTS WITH INTERFACE STATES AS BIOSENSORS, ISBN 978-081-

9487094, T.V.Torchynska, Proceeding SPIE, 2011 Optics and Photonics, 21-25 August, 2011, San-Diego,

USA, Biosensing and Nanomedicine IV, Editors Hooman Mohseni, Massoud H.Agahi, and Manijeh Razeghi,

v.8099-0Q, DOI: 10.1117/12.893997. ISBN 978-081-9487094., Proceeding SPIE, 2011 Optics and

Photonics, ISBN 978-081-9487094, Vol.8099-, Pag.100-103, Memorias de congresos ,

2011 ; SI QUANTUM DOTS AND DIFFERENT ASPECTS OF APPLICATIONS, ISBN 978-081-9487049.,

T.V. Torchynska, Si quantum dots and different aspects of applications, Proceeding SPIE, 2011 Optics and

Photonics, 21-25 August, 2011, San-Diego, USA,Nanophotonics materials VIII, Editors Stefano Cabrini and

Taleb Mokari, v.8094-05, DOI:10.1117/12.893851. ISBN 978-081-9487049., Proceeding SPIE, 2011,


2011 ; QUANTUM EMISSION EFFICIENCY OF NANOCRYSTALLINE AND AMORPHOUS SI

QUANTUM DOTS, ISSN: 1386-9477, ISSN 1386-9477, J. Physica E,, Vol.44, Pag.56-61, Revistas

Arbitradas ,

2010 ; SOME ASPECTS OF EMISSION VARIATION IN INAS QUANTUM DOTS COUPLED WITH

SYMMETRIC QUANTUM WELLS, ISSN: 0021-8979., T.V.Torchynska, A. Stintz, J. Applied Physics,,


2010 ; SCANNING PHOTOLUMINESCENCE OF INAS/INGAAS QUANTUM DOT STRUCTURES FOR

OPTICAL FIBER LASERS, ISSN: 1856-6847., E Velázquez Lozada , Tetyana Torchynska, M Dybiec, S

Ostapenko, P G Eliseev, A Stintz and K J Malloy ,, Journal of Vectorial Relativity,, Vol.5, Pag.75-77,


2010 ; RECONSTRUCTION OF POTENTIALS IN QUANTUM DOTS AND OTHER SMALL SYMMETRIC

STRUCTURES, ISSN: 0170-4214, K. Khmelnitskaya, T.V. Torchynska,, Mathematical methods in the

Applied Sciences,, Vol.8, Pag.751-755, Revistas Arbitradas ,

2010 ; OPTICAL AND STRUCTURAL INVESTIGATION OF SI NANOCLUSTERS IN AMORPHOUS

HYDROGENATED SILICON, ISSN: 0040-6090,., Ye. S. Shcherbyna a, T.V. Torchynska,, Thin Solid

Films,, Vol.518, Pag.204-207, Revistas Arbitradas ,

2010 ; SURFACE PHONONS AND EXCITON¿POLARITON COUPLING IN SIC NANOCRYSTALS, ISSN:

0040-6090,, G. Polupan a, T.V. Torchynska,, Thin Solid Films,, Vol.518, Pag.208-211, Revistas Arbitradas ,

2010 ; PECULIARITIES OF RAMAN SCATTERING IN BIOCONJUGATED CDSE/ZNS QUANTUM

DOTS, ISSN: 0957-4484, A. Diaz Cano, S. Jiménez Sandoval, Y. Vorobiev, F. Rodriguez Melgarejo and T.

V. Torchynska,, Nanotechnology,, Vol.21, Pag.13401-13402, Revistas Arbitradas ,

2010 ; TRANSFORMATION OF PHOTOLUMINESCENCE SPECTRA AT THE BIOCONJUGATION OF

CORE-SHELL CDSE/ZNS QUANTUM DOTS, ISSN: 1610-1634, L. G. Vega Macotela, J. Douda, T. V.

Torchynska, R. Peña Sierra and L. Shcherbyna,, phys.stat.solid. (c),, Vol.7, Pag.724-727, Revistas

Arbitradas ,

2010 ; VARIATION OF RAMAN SPECTRA OF CDSE/ZNS QUANTUM DOTS AT THE

BIOCONJUGATION, ISSN: 1610-1634, L. G. Vega Macotela, T. V. Torchynska, J. Douda, and R. Peña

Sierra ,, phys.stat.solid. (c),, Vol.7, Pag.1192-1195, Revistas Arbitradas ,

2010 ; EFFECT OF BOUNDARY CONDITIONS ON THE ENERGY SPECTRA OF SEMICONDUCTOR

QUANTUM DOTS CALCULATED IN THE EFFECTIVE MASS APPROXIMATION, ISSN: 1386-

9477, Y.V. Vorobiev, P.M.Gorley, V.R.Vieira, P.P.Horley, J. Gonzalez-Herna¿ndez , T.V. Torchynska ,

A.DiazCano,, Physica E,, Vol.42, Pag.2264-2268, Revistas Indizadas ,

2010 ; SOME REASONS OF EMISSION VARIATION IN INAS QUANTUM DOT-IN-A-WELL

STRUCTURES, ISSN: 1742-6588, T.V.Torchynska, J. Palacios Gomez, G. Gomez Gasga, A. Vivas

Hernandez, E. Velazquez Lozada, G. Polupan, Ye. S. Shcherbyna,, J. of Physics, Conf. Ser., Vol.245,


2010 ; MODIFICATION OF OPTICAL PROPERTIES AT BIOCONJUGATION OF CORE/SHELL

CDSE/ZNS QUANTUM DOTS, ISSN: 1742-6588, T.V.Torchynska, A.L. Quintos Vazquez, R. Pena Sierra,

K. Gazarian, L. Shcherbyna, ISSN 1742-6588, J. of Physics, Conf. Ser., Vol.245, Pag.12013-12016, Revistas

Arbitradas ,

2010 ; MECHANISM OF PHOTOLUMINESCENCE INVESTIGATION OF SI NANOCRYSTALS

EMBEDDED IN SIOX, ISBN 978-081-9481856., A. Vivas Hernandez, T.V. Torchynska, Gerrero Moreno

I.,Nanophotonics III, edited by David L. Andrews, Jean-Michel Nunzi, Andreas Ostendorf, Proceedings of

SPIE Vol. 7712 (SPIE, Bellingham, WA 2010) 771234. ISBN 978-081-9481856., Proceeding of SPIE,,


2010 ; EMISSION EFFICIENCY OF CRYSTALLINE AND AMORPHOUS SI NANOCLUSTERS, ISBN 978-

1-4244-5781-6, T.V. Torchynska, IEEE Proceeding of the International Semiconductor Conference, CAS

2010, Sinaia, Romania, October 11-13, 2010, v. 1, n. 5650229, p.99-102, (2010). ISBN 978-1-4244-5781-6,

IEEE Proceeding of CAS 2010,, Vol.1, Pag.99-102, Memorias de congresos ,

2010 ; , PHOTOLUMINESCENCE ANALYSIS IN SIC NANOCRYSTAL STRUCTURES PREPARED FOR

ELECTRONIC APPLICATIONS., T. Torchynska, A.I. Diaz Cano, G. Polupan, Yu,, Shcherbyna, IEEE

Conference ROC&C-2010,, Vol.1, Pag.300-307, Memorias de congresos ,

2010 ; NUMERICAL ANALYSIS OF THE PERFORMANCE OF P-I-N DIODE MICROWAVE SWITCHES

BASED ON DIFFERENT SEMICONDUCTOR MATERIALS, ISSN: 2229 - 6107, A. Iturri-Hinojosa , L.

M. Resendiz and T. V. Torchynska, Int. J. Pure Appl. Sci. Technol.,, Vol.1, Pag.93-99, Revistas Arbitradas

,

2009 ; BIOCONJUGATION AND INTERFACE STATE IN CDSE/ZNS QUANTUM DOTS, T. V. Torchynska,

Nanotechnology, ISSN 0957-4484, Vol.20, Pag.95401-95405, Revistas Arbitradas ,

2009 ; EXCITON RELATED PHOTOLUMINESCENCE STIMULATION IN SIC NANOCRYSTALS, ISSN:

0749-6036., T.V. Torchynska, G. Polupan,, Superlattice and Microstructure,, Vol.45, Pag.222-227,

Revistas Indizadas ,

2009 ; EXCITON CAPTURE AND THERMAL ESCAPE IN INAS DOT-IN-A-WELL LASER

STRUCTURES, T. Torchynska, Superlattice and Microstructure, ISSN 0749-6036, Vol.45, Pag.349-355,


2009 ; X RAY DIFFRACTION AND EPR STUDY OF POROUS 6H-SIC, T. V. Torchynska, V. Bratus, J.

Palacios, J. Vacuum Science and Technology, B,ISSN 1071-1023. ISSN 1071-1023, Vol.27, Pag.849-853,


2009 ; PHOTOLUMINESCENCE OF BIOCONJUGATED CORE SHELL CDSE ZNS QUANTUM DOTS, T.

Torchynska, J. Douda, P. Calva, S. Ostapenko, R Pena Siera, J. Vacuum Science and Technology, B,ISSN

1071-1023. ISSN 1071-1023, Vol.27, Pag.836-838, Publicado sin Arbitraje ,

2009 ; EMISSION OF SI NANOCLUSTERS OF DIFFERENT PHASES IN AMORPHOUS

HYDROGENATED SILICON, T. Torchynska, Superlattice and Microstructures, ISSN 0749-6036,


2009 ; PHOTOLUMINESCENCE VARIATION IN DWELL STRUCTURES WITH DIFFERENT INAS

QUANTUM DOT DENSITIES, T. Torchynska, E. Velazquez Lozada, J. L. Casas Espinola., J. Vacuum

Science and Technology, B,ISSN 1071-1023. ISSN 1071-1023, Vol.27, Pag.919-922, Revistas Arbitradas ,

2009 ; PHOTOLUMINESCENCE OF CDSE/ZNS CORE SHELL QUANTUM DOTS OF DIFFERENT SIZES

(ISSN 1610-1634)., T. Torchynska, J. Douda, R. Pena Siera, phys. stat. solid. (c), (ISSN 1610-1634)., Vol.6,


2009 ; MULTIEXITED STATE STUDY IN INAS DWELL STRUCTURES, ISSN: 0921-5107, J. Casas

Espinola, T. Torchynska, G. Polupan, E. Velazquez Lozada, Material Science and Engineering B,, Vol.152,


2009 ; BIOCONJUGATION AND INTERFACE STATE IN CDSE/ZNS QUANTUM DOTS, ISSN: 0957-4484.,

T. V. Torchynska, Nanotechnology,, Vol.20, Pag.95401-0, Revistas Indizadas ,

2009 ; X-RAY DIFRACTION AND EPR STUDY OF POROUS 6H-SIC. ISSN: 1071-1023., T. V. Torchynska,

V. Bratus, J. Palacios Gomez,, J. Vacuum Science & Technology B, Vol.27, Pag.849-852, Revistas

Indizadas ,

2009 ; PHOTOLUMINESCENCE VARIATION IN DWELL STRUCTURES WITH DIFFERENT INAS

QUANTUM DOT DENSITIES, ISSN: 1071-1023., T.V. Torchynska, E. Velazquez Lozada, J.L. Casas

Espinola,, J. Vacuum Science & Technology B, Vol.27, Pag.919-922, Revistas Indizadas ,

2009 ; PHOTOLUMINESCENCE OF BIOCONJUGATED CORE/SHELL CDSE/ZNS QUANTUM DOTS,

ISSN: 1071-1023, T.V. Torchynska, J. Douda, P. A. Calva, S. S. Ostapenko, R.Pena Siera,, J. Vacuum

Science & Technology B, Vol.27, Pag.836-838, Revistas Indizadas ,

2009 ; EMISSION OF SI NANOCLUSTERS OF DIFFERENT PHASES IN AMORPHOUS

HYDROGENATED SILICON, ISSN: 0749-6036, T.V. Torchynska,, Superlattice and Microstructure,,

Vol.45, Pag.267-270, Revistas Indizadas ,

2009 ; EXCITON CAPTURE AND THERMAL ESCAPE IN INAS DOT-IN-A-WELL LASER

STRUCTURES, ISSN: 0749-6036., T.V. Torchynska,, Superlattice and Microstructure, Vol.45, Pag.349-

355, Revistas Indizadas ,

2009 ; EXCITON RELATED PHOTOLUMINESCENCE STIMULATION IN SIC NANOCRYSTALS, T. V.

Torchynska, G. Polupan, Superlattice and Microstructures, ISSN 0749-6036, Vol.45, Pag.222-227,


2008 ; CORRELATION BETWEEN THE PHOTOLUMINESCENCE AND DIFFERENT TYPES OF SI

NANOCLUSTERS IN AMORPHOUS SILICON, T. V. Torchynska, A. L. Quintos Vazquez, G. Polupan,

Yasuhiro Matsumoto, L. Khomenkova and L. Shcherbyna,, J. Non-Crystal. Solids, ISSN 0022-3093,


2008 ; ROLE OF BALLISTIC TRANSPORT IN PHOTOLUMINESCENCE EXCITATION OF SI

NANOCRYSTALS,, T. V. TORCHYNSKA, J. Non-Crystal. Solids, ISSN 0022-3093, Vol.354, Pag.2296-


2008 ; POROUS SIC LAYERS ON SI NANOWIRE SURFACE,, A. I. Diaz Cano, T. V. Torchynska, J. E. Urbina-

Alvarez, G. R. Paredes Rubioc, S. Jimenez Sandoval, Y. V. Vorobiev,, Microelectronic journal, ISSN 0026-

2692, Vol.39, Pag.507-511, Revistas Arbitradas ,

2008 ; OPTICAL AND STRUCTURAL PROPERTIES OF SIC NANOCRYSTALS, M. Moralez Rodriguez, A.

I. Diaz Cano, T. V. Torchynska, J. Palacios Gomez, G. Gomez Gasga, G. Polupan, M. Mynbaeva,, J. Material

Science. Material in Electronics,ISSN 0957-4522, Vol.19, Pag.682-686, Revistas Arbitradas ,

2008 ; COMPARATIVE INVESTIGATION OF OPTICAL AND STRUCTURAL PROPERTIES OF

POROUS SIC, MICROELECTRONIC JOURNAL, M. Moralez Rodriguez, J. M. Rivas, A. I. Diaz Cano,

T. V. Torchynska, J. Palacios Gomez, G. Gomez Gasga, M. Mynbaeva, Microelectronic J. ISSN 0026-2692,


2008 ; SIZE DEPENDENT PHOTOLUMINESCENCE OF SI NANO-CRYSTALS EMBEDDED IN

AMORPHOUS SILICON,, A. L. Quintos Vazquez, T. V. Torchynska, G. Polupan, Yasuhiro Matsumoto, L.

Khomenkova and L. Shcherbyna,, Solid State Phenomena, ISSN 1012-0394, Vol.131-1, Pag.71-76, Revistas

Arbitradas ,

2008 ; SIZE DEPENDENT PHOTOLUMINESCENCE OF SIC NANOCRYSTALS,, M. Moralez Rodriguez, A.

I. Diaz Cano, T. V. Torchynska, G. Polupan, S. Ostapenko,, J. Non-Crystal. Solids, ISSN 0022-3093,


2008 ; PHOTOLUMINESCENCE OF DIFFERENT PHASE SI NANOCLUSTERS IN AMORPHOUS

HYDROGENATED SILICON,(ISBN 978-1-60511-077-6), T.V.TORCHYNSKA, MRS-Spring Meeting,

San Francisco, CA, USA, March 24-28, 2008., Vol.1066, Pag.131-134, Memorias de congresos ,

2008 ; SOME ASPECTS OF EXCITON THERMAL EXCHANGE IN INAS QDS COUPLED WITH

INGAAS/GAAS QUANTUM WELLS, T. V. Torchynska, J. Applied Physics, ISSN 0021-8979, Vol.104,


2008 ; RAMAN SCATTERING STUDY IN BIO-CONJUGATED CORE-SHELL CDSE/ZNS QUANTUM

DOTS,, T. V. Torchynska, J. Douda, S. S. Ostapenko, S. Jimenez-Sandoval, C. Phelan, A. Zajac, T. Zhukov,

T. Sellers,, J. Non-Crystal. Solids,ISSN 0022-3093, Vol.354, Pag.2885-2887, Revistas Arbitradas ,

2007 ; EXCITON THERMAL ESCAPE IN SYMMETRIC INAS QUANTUM DOTS IN INGAAS/GAAS

WELL STRUCTURES, (ISSN 1610-1634)., J. L. Casas Espinola, T. V. Torchynska, G. Polupan, R. Pena

Sierra,, phys. stat. sol. (c), (ISSN 1610-1634)., Vol.4, Pag.379-381, Revistas Arbitradas ,

2007 ; LOCALIZATION OF DEFECTS IN INAS QD SYMMETRIC INGAAS-GAAS DWELL

STRUCTURES,, T. V. Torchynska, J. L. Casas Espinola, E. Velasquez Lozada, L. V. Shcherbyna, A. Stinz,

R. Pena Sierra,, Physica B: Condensed Matter, ISSN 0921-4526, Vol.401, Pag.584-586, Revistas

Arbitradas ,

2007 ; GROUND AND EXCITED STATE PHOTOLUMINESCENCE MAPPING ON IN/INGAAS

QUANTUM DOT STRUCTURES, INTERNACIONAL JOURNAL OF NANOSCIENCE, (ISSN 0219-

581X), T. V. Torchynska, E. Velazquez Lozada, M. Dybic, S. Ostapenko P. G. Eliseev, A. Stintz, K. J. Malloy,

R. Pena Sierra,, Internacional Journal of Nanoscience, ISSN 0219-581X, Vol.6, Pag.383-387, Revistas

Arbitradas ,

2007 ; PHOTOLUMINESCENCE ENERGY TREND FOR GROUND AND EXCITED STATES IN INAS

QUANTUM DOTS IN INGAAS/GAAS QW STRUCTURES (ISSN 1610-1634)., E. Velasquez Lozada, T.

V. Torchynska, S. Ostapenko, M. Dybic, A. Stintz, P. G. Eliseev, K. J. Malloy,, phys. stat. sol. (c),(ISSN

1610-1634)., Vol.4, Pag.272-275, Revistas Arbitradas ,

2007 ; BALLISTIC EFFECT AND OPTICAL PROPERTIES OF SI NANOCRYSTALLITE STRUCTURES,

(ISSN 1610-1634)., T. V. TORCHYNSKA, phys. stat. sol. (c), (ISSN 1610-1634)., Vol.4, Pag.375-378,


2007 ; RAMAN SCATTERING AND SEM STUDY OF BIO-CONJUGATED CORE-SHELL CDSE/ZNS

QUANTUM DOTS (ISSN 1610-1634)., T. V. Torchynska, A. Diaz Cano, M. Dybic, S. Ostapenko, M.

Morales Rodrigez, S. Jimenes Sandoval, Y. Vorobiev, C. Phelan, A. Zajac, T. Zhukov, T. Sellers,, phys. stat.

sol. (c), (ISSN 1610-1634)., Vol.4, Pag.241-243, Revistas Arbitradas ,

2007 ; THERMAL ACTIVATION OF EXCITONS IN ASYMMETRIC INAS DOTS-IN-A-WELL

INGAAS/GAAS STRUCTURES,, T. V. Torchynska, J. L. Casas Espinola, L. V. Borkovska, S. Ostapenko,

M. Dybic, O. Polupan, N. O. Korsunska, A. Stintz, P. G. Eliseev, K. J. Malloy,, J. of Applied Physics, ISSN

0021-8979, Vol.11101, Pag.24323-24327, Revistas Arbitradas ,

2007 ; OPTICAL AND STRUCTURAL EVALIATION OF SIC NANOCRYSTALLITES, (ISSN 1742-6588),

A. I. Diaz Cano, T. V. Torchynska, M. Moralez Rodriguez, S. Jimenez Sandoval, M. Mynbaeva, J. of Physics:

Conference Series, ISSN 1742-6588, Vol.61, Pag.243-246, Revistas Arbitradas ,

2007 ; EMISSION AND STRUCTURE INVESTIGATIONS OF SI NANO-CRYSTALS EMBEDDED IN

AMORPHOUS SILICON, J. OF PHYSICS: CONFERENCE SERIES (ISSN 1742-6588), A.Vivas

Hernandez, T. V. Torchynska, A. L. Quintos Vazquez, Yasuhiro Matsumoto, L. Khomenkova and L.

Shcherbina,, J. of Physics: Conference Series,ISSN 1742-6588, Vol.611, Pag.545-548, Revistas Arbitradas

,

2007 ; CARRIER DYNAMICS IN INAS QUANTUM DOTS EMBEDDED IN INGAAS-GAAS MULTI

QUANTUM WELL STRUCTURES,(ISSN 1742-6588), J. L. Casas Espinola, M. Dybiec, S. Ostapenko, T.

V. Torchynska and G. Polupan,, J. of Physics: Conference Series, ISSN 1742-6588, Vol.61, Pag.180-184,


2006 ; PHOTOLUMINESCENCE SCANNING ON INAS/INGAAS QUANTUM DOT STRUCTURES, M.

Dybiec, L. Borkovska, S. Ostapenko, T. V. Torchynska, J. L. Casas Espinola, A. Stintz and K. J. Malloy,,

Appl. Surf. Science, ISSN 0169-4332, Vol.4, Pag.5542-5545, Revistas Arbitradas ,

2006 ; STIMULATION OF EXCITONIC AND DEFECT-RELATED LUMINESCENCE IN POROUS SIC,,

T.V.Torchynska, A. Diaz Cano, M.Dybic, S. Ostapenko, M.Mynbaeva,, Physica B, ISSN 0921-4526, Vol.3,


2006 ; PHOTOLUMINESCENCE OF SILICON NANOSRYSTALLITES IN DIFFERENT TYPES OF

MATRIXES,, T. V. TORCHYNSKA, J. Non Crystaline Solids, ISSN 0022-3093, Vol.5, Pag.1130-1135,


2006 ; PHOTOLUMINESCENCE OF SI OR GE NANOCRYSTALLITES EMBEDDED IN SILICON

OXIDE, T.V.Torchynska, A. Vivas Hernandez, Y. Goldstein, J. Jedrzejewskii, S,Jimenez Sandoval, J.Non

Cryst.Solids, ISSN 0022-3093, Vol.4, Pag.1152-1155, Revistas Arbitradas ,

2006 ; PHOTOLUMINESCENCE AND STRUCTURE INVESTIGATIONS ON SI NANO-CRYSTALS IN

AMORPHOUS SILICON MATRIZ, T. V. Torchynska, A.Vivas Hernandez , Yasuhiro Matsumoto , L.

Khomenkova and L. Shcherbina,, J.Non-Crystaline Solids,ISSN 0022-3093, Vol.352, Pag.1188-1191,


2005 ; GROUND AND EXCITED STATE ENERGY TREND IN INAS/INGAAS QUANTUM DOTS

MONITORED BY SCANNING PHOTOLUMINESCENCE SPECTROSCOPY,, T. V. Torchynska, M.

Dybiec, S. Ostapenko,, Phys. Rev. B, ISSN 1098-0121, Vol.7, Pag.95341-95347, Revistas Arbitradas ,

2005 ; RAMAN SCATTERING CHARACTERIZATION OF MACRO AND NANOPOROUS SILICON,, N.

Korsunska, B. Bulakh, B. Jumayev, L. Khomenkova, V. Yukhymchuk and T. Torchynska,, Appl. Surf.

Scien.ISSN 0169-4332, Vol.5, Pag.315-319, Revistas Arbitradas ,

2005 ; RADIATIVE CHANNEL COMPETITION IN SILICON NANOCRYSTALLITES, N. Korsunska, L.

Khomenkova, M. K. Sheinkman, T. Stara, V. Yuhimchuk, T. V. Torchynska, A. Vivas Hernandez,, J.

Luminescence, ISSN 0022-2313, Vol.5, Pag.117-121, Revistas Arbitradas ,

2005 ; PHOTOLUMINESCENCE AND PHOTOCURRENT OF SCHOTTKY DIODES BASED ON SILICON

NANOCRYSTALLITES (ISSN 1610-1634)., A. Vivas Hernandez, T. V. Torchynska, G. Polupan, S.

Jiménez-Sandoval, R. Pena Sierra, > Estrada Cueto, G. R. Paredes Rubio,, phys. stat. solid. (c), (ISSN 1610-

1634)., Vol.4, Pag.3019-3022, Revistas Arbitradas ,

2005 ; DEFECT AND NANO-CRYSTALLITE PHOTOLUMINESCENCE IN SI-SIO2 SYSTEMS, (ISSN

1610-1634)., F. G. Becerril Expinoza, T. V. Torchynska, N. Korsunska, L. Khomenkova, Y.Goldstein, E.Savir,

J.Jedrzejewski,, phys. stat. solid. (c), (ISSN 1610-1634)., Vol.4, Pag.2990-2993, Revistas Arbitradas ,

2005 ; RAMAN SCATTERING INVESTIGATION ON POROUS SIC LAYES, (ISSN 1610-1634)., T. V.

Torchynska, M. Morales Rodriges, A. Vivas Hernandez, G. Polupan, S. Jiménez-Sandoval, S. Ostapenko and

M. Mynbaeva,, phys. stat. sol. (c), (ISSN 1610-1634)., Vol.4, Pag.2962-2965, Revistas Arbitradas ,

2005 ; PHOTOLUMINESCENCE MAPPING ON INAS/INGAAS DOT STRUCTURES (ISSN 1610-1634)., M.

Dybiec, S. Ostapenko, T. V. Torchynska, E.Velasquez Lozada, P. G. Eliseev, A. Stintz, K. J. Malloy,, phys.

stat. sol. (c), (ISSN 1610-1634)., Vol.4, Pag.2951-2954, Revistas Arbitradas ,

2005 ; MAGNETIC FIELD EFFECT ON THE VISIBLE PHOTOLUMINESCENCE OF POROUS SILICON,

(ISSN 1610-1634)., T.V. Torchynska, A.Diaz Cano, L.Y. Khomenkova, V.N. Zakharchenko, R.V.

Zakharchenko, J. González-Hernández, Y.V. Vorobiev,, phys.stat.sol., (c), (ISSN 1610-1634)., Vol.5,


2005 ; MULTIPLE EXCITED STATE MODIFICATION IN INAS/INGAAS QUANTUM DOT

STRUCTURES AT HIGH EXVITATION POWER,, T.V.Torchynska, H.M.Alfaro Lopez, J.L. Casas

Espinola, P.G.Eliseev, A. Stintz, K.J. Malloy, R. Pena Sierra,, Microelectronics J., ISSN 0026-2692, Vol.4,


2005 ; OPTICAL INVESTIGATION OF SI NANO-CRYSTALS IN AMORPHOUS SILICON MATRIX,, A.

Vivas Hernandez, T.V.Torchynska, Y. Matsumoto, S. Jiménez Sandoval, M. Dybic, S. Ostapenko, L.V.

Shcherbyna,, Microelectronics, ISSN 0026-2692, Vol. , Pag.510-513, Revistas Arbitradas ,

2005 ; PHOTOLUMINESCENCE AND RAMAN SPECTROSCOPY IN POROUS SIC, T.V.Torchynska, A.

Diaz Cano, S. Jiménez Sandoval, M.Dybic, S. Ostapenko, M.Mynbaeva,, Microelectronics, ISSN 0026-2692,


2005 ; OPTICAL PROPERTIES OF POROUS SILICON SURFACE,, E. Chambon, E. Florentin, T. Torchynska,

J. Gonzalez Hernandez, Y. Vorobiev,, Microelectronics, ISSN 0026-2692, Vol.4, Pag.514-517, Revistas

Arbitradas ,

2005 ; OPTICAL CHARACTERIZATION OF CRYSTALLINE SILICON EMBEDDED IN A-SI MATRIX,

(ISSN 1610-1634)., T.V.Torchynska, A. Vivas Hernandez, M.Dybiac, I.Tarasov, Y.phys. stat. sol. (c),(ISSN

1610-1634)., Vol.5, Pag.1832-1836, Revistas Arbitradas ,

2005 ; RAMAN SCATTERING AND STRUCTURE INVESTIGATION ON POROUS SIC LAYERS,, T. V.

Torchynska, A. Vivas Hernandez, A. Diaz Cano, S. Jiménez-Sandoval, S. Ostapenko, M. Mynbaeva,, J. Appl.

Phys. ISSN 0021-8979, Vol.6, Pag.33507-33512, Revistas Arbitradas ,

2005 ; PHOTOLUMINESCENCE AND PHOTOCURRENT OF POROUS SILICON SCHOTTKY

BARRIERS,, T. V. Torchynska, A. Vivas Hernandez, G. Polupan, S. Jimenez Sandoval, M. Estrada Cueto, R.

Pena Sierra and G. R. Paredes Rubio,, Thin Solid Films, ISSN 0040-6090, Vol.5, Pag.327-331, Revistas

Arbitradas ,

2004 ; SI WIRE LIGHT EMISSION CHANGES DURING SI-SIOX INTERFACE FORMATION (ISBN 1-

55899-758-X), F.G. Becerril Espinoza, T. Torchynska, M. Morales Rodriguez, L. Khomenkova, L. V.

Shcherbyna, 2004 MRS American Symposium Proceeding, Vol.808, Pag.5-10, Memorias de congresos ,

2004 ; VISIBLE PHOTOLUMINESCENCE OF GE ENRICHED SIOX LAYERS,, T.V.Torchynska, A.Vivas

Hernandez, A.V.Kolobov, Y.Goldstein, E.Savir, J.Jedrzejewski,, J. Electr. Spectroscopy and Related

Phenomena, ISSN 0368-2048, Vol.137, Pag.619-623, Revistas Arbitradas ,

2004 ; SHELL MODEL OF SEMICONDUCTOR QUANTUM DOTS (ISBN 978 081 9436016), P.G.Eliseev,

D.P. Popescu, T.V.Torchynska, K.J.Malloy, A.Stintz, Proc. SPIE Congress, USA, Vol.5349, Pag.46-53,


2004 ; SCANNING PHOTOLUMINESCENCE SPECTROSCOPY IN INAS/INGAAS QUANTUM DOT

STRUCTURES,, M. Dybiec, S. Ostapenko, T. V. Torchynska, E.Velasquez Losada,, Appl. Phys. Lett. ISSN


2004 ; HOT ELECTRON EFFECTS IN EXCITATION OF VISIBLE PHOTOLUMINESCENCE IN SI

NANOWIRES, (ISSN 1109-9445), T. Torchynska, L. Khomenkova, V. Zakharchenko, R. Zakharchenko, J.

Gonzalez Hernandez, Y. Vorobiev,, WSEAS Transactions on Electronics, ISSN 1109-9445, Vol.6, Pag.1-5,


2004 ; HIGH EFFICIENCY SOLAR CELLS FOR SPACE APPLICATIONS, (ISSN 1665-3521),

T.V.Torchynska, G. Polupan,, Superficio y Vacio, Vol.5, Pag.22-26, Revistas Arbitradas ,

2003 ; SPACIALLY RESOLVED PHOTOLUMINESCENCE AND THERMALLY STIMULATED

LUMINESCENCE OF SEMI-INSULATED SIC WAFERS,, S. Ostapenko, S. Lulu, I. Tarasov, S. Saddow,

T. Torchynska, ISBN: 1-55899-679-6, Proceeding of 2002 American MRS Congress, Vol.5, Pag.103-108,


2003 ; MULTI SHELL PHOTOLUMINESCENCE FROM INAS/INGAAS QUANTUM DOTS,

T.V.Torchynska,, Proc. SPIE Congress (USA), Vol.8, Pag.21-28, Memorias de congresos ,

2003 ; THERMAL QUENCHING OF EMISSION OF SELF ESSEMBLED INAS QUANTUM DOTS, T,

Torchynska, J, Casas Espinola, H. Alfaro Lopez, P. Eliseev, A. Stinz, Inst. of Physics, Conf, Series,ISSN


2003 ; OPTICAL AND STRUCTURAL INVESTIGATION OF GE-SIO2 SYSTEMS, T, Torchynska, G.

Polupan, J. Aqualar, A. Kolobov, Ins. of Physics, Conference ser.ISSN 1742-6588, Vol.174, Pag.65-67,


2003 ; BALLISTIC EFFECT AND PHOTOLUMINESCENCE EXCITATION IN POROUS SILICON,

T.V.TORCHYNSKA, M.Morales Rodrigez, L.Yu. Khomenkova,, SURFACE SCIENCE, ISSN 0039-6028,


2003 ; METASTABLE DEFECTS IN SI3N4 LAYERS ACCESSED BY SCANNING

PHOTOLUMINESCENCE, I. TARASOV, M.DYBIEC, T.V.TORCHYNSKA, S.OSTAPENKO,

PHYSICA B.Condensed Matter, ISSN 0921-4526, Vol.5, Pag.1117-1121, Revistas Arbitradas ,

2003 ; LOCALIZED EXCITONS IN INAS SELF ASSEMBLED QUANTUM DOTS EMBEDDED IN

INGAAS-GAAS MULTIQUANTUM WELLS,, T. V. TORCHYNSKA, J. L. CASAS ESPINOZA, P. G.

ELISEEV, A. STINTZ, K. J. MALLOY, R. PENA SIERRA,, PHYS. STAT. SOL. (A), ISSN 1862-6300,


2003 ; HOT CARRIERS AND EXCITATION OF SISIOX INTERFACE DEFECT PHOTOLUMINESCENCE

IN SI NANOCRYSTALLITES, T.V.TORCHYNSKA,, PHYSICA B, Condensed Matter, ISSN 0921-


2003 ; FORMATION OF SISIOX INTERFACE AND ITS INFLUENCE ON PHOTOLUMINESCENCE OF

SI NANOCRYSTALLITES,, F.G.BECERRIL EXPINOZA, T.V.TORCHYNSKA, M.MORALES

RODRIGEZ, L.KHOMENKOVA, L.V.SCHERBINA,, MICROELECTRONICS, ISSN 0026-2692, Vol.3,


2003 ; PHOTOLUMINESCENCE OF GE NANOCRYSTALLITES EMBEDDED IN SILICON OXIDE,,

T.V.TORCHYNSKA, G.POLUPAN, J.PALACIOS GOMEZ, A.V.KOLOBOV,,

MICROELECTRONICS,ISSN 0026-2692, Vol.3, Pag.541-543, Revistas Arbitradas ,

2003 ; BALLISTIC REGIME AND PHOTOLUMINESCENCE EXCITATION IN SI WIRES AND DOTS,,

T.V.TORCHYNSKA, M. Morales Rodriguez, A. Vivas Hernandez, K. W. Cheah, J.OF

LUMINESCENCE,ISSN 0022-2313, Vol.6, Pag.551-556, Revistas Arbitradas ,

2003 ; MECHANISM OF PHOTOLUMINESCENCE OF SILICON OXIDE FILMS ENRICHED BY SI OR

GE,, T.V.TORCHYNSKA, Y.GOLDSTEIN, A.MANY, J.JEDRZEJEWSKII, A.V.KOLOBOV,,

MICROELECTRONICS ENGINEERING,ISSN 0022-2313, Vol.7, Pag.83-90, Revistas Arbitradas ,

2003 ; BALLISTIC EFFECT AND NEW CONCEPT OF SI WIRE PHOTOLUMINESCENCE,,

T.V.TORCHYNSKA,, MICROELECTRONICS ENGINEERING,ISSN 0022-2313, Vol.6, Pag.17-25,


2003 ; PHOTOLUMINESCENCE AND ITS EXCITATION MECHANISMS IN SI WIRES AND DOTS,,

T.V.TORCHYNSKA, J.AGUILAR HERNANDEZ, A.I.DIAZ CANO, F.G.BACARRILESPINOZA,, PHYS.

STAT. SOL. (A),ISSN 1862-6300, Vol.6, Pag.382-387, Revistas Arbitradas ,

2003 ; PHOTOLUMINESCENCE OF SILICON OXIDE FILMS ENRICHED BY SI OR GE,,

T.V.TORCHYNSKA, J. AGUILAR HERNANDEZ, L. SCHACHT HERNANDEZ,, J.LUMINESCENCE,

ISSN 0022-2313, Vol.5, Pag.557-561, Revistas Arbitradas ,

2003 ; NATURE OF VISIBLE LUMINESCENCE AND ITS EXCITATION IN SISIOX SYSTEMS,,

T.V.TORCHYNSKA, Y.GOLDSTEIN, A.MANY, J.JEDRZEJEWSKII, N.E.KORSUNSKAYA,

L.YU.KHOMENKOVA, B.M.BULAKH,, J.LUMINESCENCE,ISSN 0022-2313, Vol.6, Pag.705-711,


2003 ; THERMAL IONISATION OF GROUND AND MULTIPLI EXITED STATES IN INAS QUANTUM

DOTS EMBEDDED INTO INGAAS MQW,, T. V. TORCHYNSKA, SURFACE SCIENCE, ISSN 0039-


2003 ; NATURE OF VISIBLE LUMINESCENCE OF SI CO-SPUTTERED SI-SIOX SYSTEMS,

T.TORCHYNSKA, F.BECERRIL ESPINOZA, Y.GOLDSTEIN, E.SAVIR, J.JEDRZEJEWSKI,

L.KHOMENKOVA, N.KORSUNSKA, Y.YUKHIMCHUK, PHYSICA B.,Condensed Matter, ISSN 0921-


2003 ; PHOTOLUMINESCENCE OF INAS QUANTUM DOT STRUCTURES FOR OPTICAL FIBER

LASER, T.V.Torchynska, E.Velasquez Lozada, M.Dubiec, S.Ostapenko, P.G.Eliseev, A.Stinz, K.J.Malloy,, 7

Congresso Nacional Ingeneria Mecanica y Electrica del IPN,, Vol.2, Pag.115-117, Memorias de

congresos ,

2003 ; PHOTOLUMINESCENCE OF SILICON OXIDE FILMS ENRICHED BY SI AND GE, T. Torchynska,

J. Aquilar, L. Sanches, Y. Goldstein, A. Many, A.V. Kolobov, J. Luminecence, ISSN 0022-2313, Vol.102,


2002 ; COMPARATIVE INVESTIGATION OF PHOTOLUMINESCENCE OF SILICON WIRE

STRUCTURES AND SILICON OXIDE FILMS,, T.V.TORCHYNSKA, J.AGUILAR HERNANDEZ,

M.MORALES RODRIGUEZ, C.MEJIA GARCIA, G.CONTRERAS PUENTE, F.G.BACARRIL

ESPINOZA,, J.PHYS.CHEM.SOLIDS, ISSN: 0022-3697, Vol.6, Pag.561-568, Revistas Arbitradas ,

2002 ; BALLISTIC REGIME AND PHOTOLUMINESCENCE IN SILICON NANOCRYSTALLITES,, T. V.

Torchynska, J. Appl. Phys. ISSN 0021-8979, Vol.5, Pag.4019-4023, Revistas Arbitradas ,

2002 ; BALLISTIC EFFECT AND RED PHOTOLUMINESCENCE OF SI WIRES. ., T.V.TORCHYNSKA,

M.MORALES RODRIGUEZ, F.G.BACARRILESPINOZA, N.E.KORSUNSKAYA, L.YU.KHOMENKOVA,

L.V.SCHERBINA,, PHYS. REV.B, ISSN 1098-0121, Vol.65, Pag.11531-11532, Revistas Arbitradas ,

2002 ; THE INTERRELATION OF SURFACE RELIEF OF POROUS SILICON WITH SPECIFIC

FEATURES OF RAMAN SPECTRA,, O.S.LYTVYN, T.V.TORCHYNSKA, L.YU.KHOMENKOVA,

V.A.YUKHIMCHUK,, SEMICONDUCTORS, ISSN 1063-7826, Vol.5, Pag.558-563, Revistas Arbitradas ,

2002 ; USXES AND OPTICAL PHENOMENA IN SI LOW DIMENSIONAL STRUCTURES DEPENDENT

ON MORPHOLOGY AND SILICON OXIDE COMPOSITION ON SI SURFACE,, T. V.

TORCHYNSKA, M.MORALES RODRIGUEZ, G. P.POLUPAN,L.I.KHOMENKOVA, E.P.

DOMASHEVSKAYA,, SURFACE REVIEW AND LETTERS, ISSN: 0218-625X, Vol.4, Pag.1047-1051,


2002 ; DEFECT RELATED LUMINESCENCE OF SI SIO2 LAYERS,, L.KHOMENKOVA, N.KORSUNSKA,

T.TORCHYNSKA, Y.YOKHIMCHUK, B.JUMAYEV, A.MANY, Y.GOLDSTEIN, E.SAVIR,

J.JEDRZEJEWSKI,, J.PHYS. CONDENS. MATTER., ISSN 0953-8984, Vol.4, Pag.13217-13221, Revistas

Arbitradas ,

2002 ; PHOTOLUMINESCENCE AND SURFACE STRUCTURE INVESTIGATIONS OF SILICON LOW

DIMENSIONAL SYSTEMS, J.AGUILARHERNANDEZ, T.V.TORCHYNSKA,

F.G.BACARRILESPINOZA, M.MORALES RODRIGUEZ, J.PALACIOS GOMEZ, MATERIAL

SCIENCE LETTERS, ISSN 0368-2048, Vol.4, Pag.2061-2064, Revistas Arbitradas ,

2002 ; DEFECT RELATED PHOTOLUMINESCENCE IN SI WIRES,, T. TORCHYNSKA, J.

AGUILARHERNANDEZ, A.I.DIAZ CANO, G. CONTRERASPUENTE, F.G. BECERRIL ESPINOZA,,

PHYSICA B, Condensed Matter, ISSN 0921-4526, Vol.5, Pag.1108-1112, Revistas Arbitradas ,

2002 ; THERMAL QUENCHING OF EMISSION OF SELF-ASSEMBLED INAS QUANTUM DOTS

EMBEDDED IN INGAAS WQW,, T.V.Torchynska, J.L.Casas Espinola, R.Pena Sierra, 29th International

Symposium on Compound Semiconductors, ISCS 2002, , Lausanne, Switzerland,, Vol. , Pag.65-67,


2002 ; OPTICAL AND STRUCTURAL INVESTIGATION OF GESIO2 SYSTEMS,, T.V.Torchynska, 29th

International Symposium on Compound Semiconductors, ISCS 2002, Lausanne, Switzerland,, Vol.3,

Pag.69-71, Memorias de congresos ,

2002 ; INVESTIGACION DE LA RESPUESTA ESPECTRAL DE LA FOTOCORRIENTE EN

ESTRUCTURAS DE NANOCRISTALES DEL TIPO SI POROSO, PARA SU APLICACION EN

CELDAS SOLARES PARA SATELITES DE TELECOMUNICACIONES., A.Vivas Hernandez,

T.V.Torchynska,, 2 Congreso Internacional de Ingeniria ElectroMecanica y de Sistemas,, Vol.3, Pag.31-

33, Memorias de congresos ,

2002 ; MULTIPLE EXCITED STATE EMISSION AND ITS THERMAL QUENCHING IN INAS/INGAAS

QDS,, T.V.Torchynska, J.L.Casas Espinola, .Pena Sierra, 8 Conferencia de Ingenieria Electrica de

CINVESTAV, Vol.4, Pag.468-471, Memorias de congresos ,

2002 ; BALLISTIC EFFECT AND PHOTOLUMINESCENCE EXCITATION IN SI WIRES,, T.V.Torchynska,

7-th Intern. Conference of nanometer scale science and technology, NAO-7Malmo, Sweden, Vol.3,


2002 ; THERMAL IONIZATION OF MULTIPLY EXCITED STATES IN INAS SELF-ASSEMBLED

QUANTUM DOTS EMBEDDED INTO INGAAS/GAAS MQW, T.V.Torchynska, J.L.Casas Espinola,

E.Velasquez Losada,, 7-th Intern. Conference of nanometer scale science and technology, NAO-7Malmo,

Sweden, Vol.3, Pag.207-209, Memorias de congresos ,

2002 ; PHOTOLUMINESCENCE AND ITS EXCITATION MECHANISM IN SI WIRES AND DOTS,,

T.V.Torchynska, 3-rd Int. Conf. Porous semiconductors, Science and Technology, Spain, Vol.3, Pag.294-


2002 ; FORMATION OF THE SI/SIO INTERFACE AND ITS INFLUENCE ON THE POROUS SILICON

PHOTOLUMINESCENCE,, T.V.Torchynska,, 3-rd Int. Conf. Porous semiconductors, Science and

Technology, Spain,, Vol.3, Pag.315-317, Memorias de congresos ,

2002 ; IIIV MATERIAL SOLAR CELLS FOR SPACE APPLICATION,, T. V. TORCHYNSKA, G. Polupan

ISSN 1605-6582, J. OF SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS, Vol.7, Pag.61-65,


2001 ; APPLICATION OF III-V MATERIALS IN SPACE SOLAR CELL ENGINEERING, T. Torchynska, G.

Polupan, E. Shcherbyna, Modern Physics Letters, ISSN: 0217-7323, Vol.15, Pag.593-596, Revistas

Arbitradas ,

2001 ; OPTICAL AND STRUCTURE STUDIES OF SILICON LOW-DIMENSIONAL SYSTEMS,,

T.V.Torchynska, 25-th International Conference on Physics of Semiconductors, Osaka, Japan,, Vol.3,


2001 ; COMPARATIVE INVESTIGATION OF SURFACE STRUCTURE, PHOTOLUMINESCENCE AND

ITS EXCITATION IN SILICON WIRES, T.V.TORCHYNSKA, J.PALACIOS GOMEZ, G.P.POLUPAN,

F.G.BECERRIL ESPINOZA, ISSN 0368-2048, JOURNAL OF ELECTRONIC SPECTROSCOPY AND

RELATED PHE, Vol.7, Pag.235-241, Revistas Arbitradas ,

2001 ; CELDAS SOLARES BASADAS EN ESTRUCTURAS DE ALAMBRE DE SI,, T.V.Torchynska, A.Vivas

Hernandez,, De 6-sexto Congreso Nacional de Ingeniria Electromecanica y de Sistemas, Mexico,, Vol.3,


2001 ; APPLICATION OF III-V MATERIALS IN SPACE SOLAR CELL ENGINEERING,,

T.TORCHYNSKA, MODERN PHYSICS LETTER, Vol.4, Pag.593-596, Revistas Arbitradas ,

2001 ; INVESTIGACION DE LOS INAS PUNTOS CUANTICOS INSERTADOS DENTRO DE

ESTRUCTURAS LASER DE INGAAS/GAAS PARA FIBRA OPTICA, T.V.Torchynska, J.L.Casas

Espinola, E.Velazquez Lozada,, 6-sexto Congreso Nacional de Ingeniria Electromecanica y de Sistemas,

Mexico,, Vol.3, Pag.967-969, Memorias de congresos ,

2001 ; THE ROLE OF OXIDATION ON POROUS SILICON PHOTOLUMINESCENCE AND ITS

EXCITATION, T.V.TORCHYNSKA, N.E.KORSUNSKAYA, L.YU.KHOMENKOVA, B.R.DZHUMAEV,

S.M.PROKES,, THIN SOLID FILMS, ISSN 0040-6090, Vol.6, Pag.88-93, Revistas Arbitradas ,

2000 ; NATURE OF RED PHOTOLUMINESCENCE IN POROUS SILICON,, T.V.Torchynska, 3-rd

International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM¿2000,

Smolenice Castle, Slovakia,, Vol.4, Pag.305-308, Memorias de congresos ,

2000 ; PECULIARITIES OF RAMAN SPECTRA FROM POROUS SILICON,, T.V.Torchynska,

L.I.Khomenkova, N.E.Korsunskaya,, Conference on Advanced Semiconductor Devices and Microsystems,

ASDAM¿2000, Smolenice Castle, Slovakia, Vol.3, Pag.63-66, Memorias de congresos ,

2000 ; TEMPERATURE EFFECT ON PHOTOLUMINESCENCE EXCITATION PROCESS OF POROUS

SILICON,, T.V.Torchynska,L.I.Khomenkova, N.E.Korsunskaya, B.R.Dzumaev, B.M.Bulakh, Y.Goldstein,

A.Many, E.Savir, ISSN 1742-6588, Proc. International Semiconductor Conf., CAS¿2000, Romania, 2000,


2000 ; PERSPECTIVE OF III-V MATERIAL SOLAR CELL APPLICATION IN SPACE SOLAR

ENERGETICS, T. Torchynska, J. Palacios, G. Polupan, A. Kabatskaya, Proceeding of SPIE,, Vol.3975,


2000 ; ELECTRO- AND PHOTO LUMINESCENCE SPECTRA IN GAP N LED AT THE CREATION

DISLOCATION, T, Torchynska, A,Kabatskaya, N. Korsunskaya, V. Kooshnirenko ISBN: 9780819436016,

Proceeding SPIE, Vol.3975, Pag.123-127, Memorias de congresos ,

2000 ; OPTICAL AND STRUCTURAL STUDY OF SILICON LOW DIMENSIONAL SYSTEMS, T.

Torchynska, Becerril Espinoza, A.Many, Y. Goldstein, 25th International Conference on Physics of

Semiconductors, Osaca, Japan, Vol. , Pag.213-215, Memorias de congresos ,

2000 ; COMPLEX NATURE OF RED PHOTOLUMINESCENCE BAND AND PECULIARITIES OF IT[S

EXCITATION IN POROUS SILICON, T.V.TORCHYNSKA, J.Palacios Gomez, F.G.Becerril Espinoza,

N.E.Korsunskaya, L.Yu. Khomenkova,, APPL.SURFACE SCIENCE, ISSN 0169-4332, Vol.7, Pag.197-204,


2000 ; SUB OXIDE RELATED CENTER AS THE SOURCE OF THE INTENSE RED LUMINESCENCE OF

POROUS SI, T.V.TORCHYNSKA, N.E.Korsunskaya, L.Yu.Khomenkova, B.R.Dzhumaev, S.M.Prokes,,

MICROELECTRONICS AND ENGINERING, Vol.9, Pag.485-493, Revistas Arbitradas ,

2000 ; THREE APPROCHES TO SURFACE SABSTANCE ROLE INVESTIGATION IN POROUS

SILICON PHOTOLUMINESCENCE AND ITS EXCITATION, T.V.TORCHYNSKA,

N.E.KORSUNSKA, L.KHIMENKOVA, B.DZUMAEV, J.PHYS.CHEM.SOLIDS, ISSN: 0022-3697, Vol.5,


2000 ; ESFUERZOS ELACTICOS EN LAS ESTRUCTURAS DE SEMICONDUCTORS MULTICAPAS,,

T.V.Torchynska, F.Conde Zelocuatecatl, G.P.Polupan, 5 Quinto Congreso Naciocal de Ingenieria

Electromechanica y de sistemas,, Vol.3, Pag.77-79, Memorias de congresos ,

2000 ; DESARROLLO DE CELDAS SOLARES PARA SATELITES DE TELECOMUNICACIONES

ESPACIALES,, A.Vivas Hernández, G.P.Polupan, T.V.Torchynska, 5 Quinto Congreso Naciocal de

Ingenieria Electromechanica y de sistemas, Vol.3, Pag.91-93, Memorias de congresos ,

1999 ; ROLE OF SURFACE SUBSTANCES IN EXCITATION OF POROUS SILICON, L. Khomenkova, B.

Dzumaev, T. Torchynska, N. Korsunska, Y. Goldstein, Proceeding SPIE, Vol.3725, Pag.111-115, Memorias

de congresos ,

1999 ; ¿THE NATURE OF PHOTOLUMINESCENCE EXCITATION BANDS IN POROUS SILICON¿,,

.V.Torchynska, L.I.Khomenkova, N.E.Korsunskaya ISBN: 0-7803-5139-8, International Semiconductor

Conf., CAS¿99, Romania, Vol.3, Pag.109-112, Memorias de congresos ,

1999 ; ¿INFLUENCE OF DISLOCATION ON EXCITONIC AND DA LUMINESCENCE SPECTRA IN GAP

EPITAXIAL LAYERS¿,, T.V.Torchynska, N.E.Korsunskaya, B.I. Kooshnirenko, ISBN: 0-7803-5139-8,

International Semiconductor Conf., CAS¿99, October, Sinai, Romania, Vol.3, Pag.53-56, Memorias de

congresos ,

1999 ; ¿PERSPECTIVA DE APLICACION DE LOS MATERIALES DE SILICIO Y ELEMENTOS III-V

GRUPO EN LAS CELDAS SOLARES TERRESTRE Y ESPACIAL¿,, T.V.Torchynska, 2-Congreso

Internacional de Ingenieria Electromechanica y de sistemas,, Vol.4, Pag.52-56, Memorias de congresos ,

1999 ; OH RELATED EMITTING CENTERS IN INTERFACE LAYER OF POROUS SILICON,,

T.V.TORCHYNSKA, L.I.KHOMENKOVA, N.E.KORSUNSKA, M.K.SHEINKMAN, J.PHYSICS B,

Condensed Matter, ISSN 0921-4526., Vol.4, Pag.955-958, Revistas Arbitradas ,

1999 ; INVESTIGATION OF AGEING PROCESS IN POROUS SILICON, N.P.Baran, N.E.Korsunskaya,

L.Yu.Khomenkova,B.R.Dzhumaev, T.V.Torchinskaya, B.M.Bulakh, G.Polisskii,, UKR. FIZ. ZH.

(UKRAINE J.OF PHYSICS) ISSN: 0960-6068, Vol.5, Pag.394-398, Revistas Arbitradas ,

1999 ; ROLE OF SURFACE SUBSTANCES IN EXCITATION OF POROUS SILICON

PHOTOLUMINESCENCE, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA, L.YU.KHOMENKOVA,

B.R.DZHUMAEV, OPTOELECTRONICS.REVIEW, ISSN 1230-3402, Vol.5, Pag.135-138, Revistas

Arbitradas ,

1999 ; MECHANISM OF INJECTION ENHANCED DEFECT TRANSFORMATION IN LPE CAAS

STRUCTURES,, T.V.TORCHYNSKA, G. Polupan, E. Shcherbyna, V. Kooshnirenko, PHYSICS B,

Condensed Matter,ISSN 0921-4526., Vol.8, Pag.1038-1046, Revistas Arbitradas ,

1999 ; SI AND GAAS APPLICATION COMPARISON FOR SPACE AND TERRESTRIAL SOLAR CELLS,

T.V.TORCHINSKAYA,, CIENTIFICA, Vol.11, Pag.35-45, Revistas Arbitradas ,

1998 ; MECHANISM OF III-V LED DEGRADATION, T. Torchynska, Proceeding of SPIE, Vol.3316, Pag.200-


1998 ; ¿ OXIDATION PROCESS EFFECTS ON POROUS SILICON PHOTOLUMINESCENCE¿,,

T.V.Torchinskaya, N.E.Korsunskaya,L. Khomenkova, Y. Golstein ISBN: 0-7803-4432-4, Intern.

Semiconductor Conf., CAS¿98, Romania,, Vol.3, Pag.131-137, Memorias de congresos ,

1998 ; TWO WAYS OF POROUS SI PHOTOLUMINESCENCE EXCITATION, T.V.TORCHINSKAYA,

N.E.KORSUNSKAYA,L.YU. KHOMENKOVA,, MATERIALS SCIENCE ENGINEERING, ISSN: 0921-


1998 ; CURRENT STATUS OF SPACE AND TERRESTRIAL SOLAR ENERGETICS,

T.V.TORCHINSKAYA, OPTOELECTRONICS. REVIEW, ISSN: 1230-3402, Vol.10, Pag.121-130,


1998 ; EFFECT OF THE DESORPTION PROCESS ON PHOTOLUMINESCENCE EXCITATION

SPECTRA OF POROUS SILICON, T.V.TORCHINSKAYA,N.E.Korsunskaya, L.Yu.Khomenkova,

B.R.Dzhumaev, Y.Goldstein, E.Savir, ISSN 1605-6582, SEMICONDUCTOR PHYSICS, QUANTUM

ELECTRONICS OPT, Vol.5, Pag.61-65, Revistas Arbitradas ,

1997 ; ¿COMPLEX STUDIES OF POROUS SILICON AGING PHENOMENA¿,,

T.V.Torchinskaya,N.E.Korsunskaya, L.Yu. Khomenkova, M.K.Sheinkman, A. Misiuk, ISBN: 0-7803-4032-8,

International Semiconductor Conf., CAS, 97, Sinai, Romania, Vol.3, Pag.215-217, Memorias de

congresos ,

1997 ; VARIATIONS OF IV CURVES OF SILICON IMPATT DIODES STIMULATED BY G RADIATION,

R.V.KONAKOVA, M.B.TAGAEV, T.V.TORCHINSKAYA, L.V.SHCHERBIna, FUNCTIONAL

MATERIALS, ISSN 1027-5495, Vol.4, Pag.568-571, Revistas Arbitradas ,

1997 ; TWO SOURCES OF EXCITATION OF PHOTOLUMINESCENCE OF POROUS SILICON,

T.V.TORCHINSKAYA,N.E.Korsunskaya, L.Yu. Khomenkova, B.Dzumaev, B.M.Bulakh,,

SEMICONDUCTORS, ISSN 1063-7826, Vol.4, Pag.773-776, Revistas Arbitradas ,

1997 ; PHOTOLUMINESCENCE AND EPR STUDIES OF POROUS SILICON, T.V.TORCHINSKAYA,

N.E.Korsunskaya, L.Yu. Khomenkova, B.Dzumaev, M.K.Sheinkman, N.P.Baran, J.OF LUMINESCEN,


1996 ; ¿EXCITATION MECHANISM OF POROUS SI PHOTOLUMINESCENCE¿,, T.V.Torchinskaya,

Advanced Semiconductor Devices and Microsystems-ASDAM 96¿, Smolenice, Slovakia,, Vol.4, Pag.121-


1996 ; DEPENDENCE OF THE PHOTOLUMINESCENCE OF POROUS SILICON ON THE SURFACE

COMPOSITION OF THE SILICON FILMS, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA,

B.DZUMAEV,O.D.Smiyan, A.L.Kapitanchuk, S.O.Antonov,, SEMICONDUCTORS, ISSN 1063-7826,


1996 ; ¿ ELECTRICAL AND OPTICAL PROPERTIES OF NON-UNIFORM SEMICONDUCTING

SYNTHETIC DIAMOND WITH DEEP IMPURITY LEVELS¿,, Yu. Vorobiev, T.V.Torchinskaya, IEEE

Semi-Insulat. Material Conference SIMC - 9, France, Vol.3, Pag.31-34, Memorias de congresos ,

1996 ; ¿OPTICAL AND FIELD MEMORY EFFECTS IN SEMICONDUCTING DIAMOND¿,,

T.V.Torchinskaya, Y.V.Vorobiev, R.V.Zakharchenko,, Advanced Semiconductor Devices and

Microsystems-ASDAM 96¿, Slovakia,, Vol.4, Pag.29-32, Memorias de congresos ,

1995 ; . "SIOX RELATED PHOTOLUMINESCENCE EXCITATION IN POROUS SILICON",,

T.V.Torchinskaya, N.E.Korsunskaya, B.Dzumaev ISBN: 1-55899-731-8, 1995 MRS Fall Meeting, USA,

ISBN: 1-55899-731-8, Vol. , Pag.17-22, Memorias de congresos ,

1995 ; DEEP CENTERS IN INXGA1XASINP PHOTODIODES FABRICATED BY THE METALORGANIC

CHEMICAL VAPOR DEPOSITION, T.V.TORCHINSKAYA, V.I.KOOSHNIRENKO,

L.V.SHCHERBINA, C.J.MINER, SEMICONDUCTORS, ISBN: 1-55899-731-8, Vol.3, Pag.692-694,


1995 ; AGING OF PHOTOLUMINESCENCE AND EXCITATION SPECTRA OF POROUS SILICON,

T.V.TORCHINSKAYA, N. Korsunskaya, B. Dzumaev, SPIE,OPTICAL SCIENCE, ENGINEERING AND

INSTRU, Vol.6, Pag.265-271, Revistas Arbitradas ,

1994 ; TRANSFORMATION OF EXCITONIC SPECTRA OF GAP N LED STRUCTURES, T, Torchynska,

Proc. Inter, Conf. Electronic Materials, ICEM 94, Taiwane, Vol. , Pag.97-100, Memorias de congresos ,

1994 ; CHARACTERIZATION OF DEEP LEVEL DEFECTS IN MOCVD INGAAS LAYERS, T. Torchynska,

8th Conference on Semi insulation III-V Materials, Vol. , Pag.113-116, Memorias de congresos ,

1994 ; DEEP CENTERS DUE TO GE ATOMS IN ALGAASBASED DOUBLE HETEROSTRUCTURES,

T.V.TORCHINSKAYA, V.I.GNATENKO, SEMICONDUCTORS, ISSN 1063-7826, Vol.4, Pag.735-738,


1994 ; CARACTERIZATION OFDEEP LEVELDEFECTSAND THEIR CONNECTION WITH THE

PERFOMANCE OF INXGA1XASINP PINPHOTODIOD, T.V.TORCHINSKAYA, V. Kooshnirenko,,

SPIE, . MICROELECTRONIC AND MANUFACTURING (USA), Vol.4, Pag.233-236, Revistas

Arbitradas ,

1994 ; THE CAUSES OF EMITTINGPOWER INSTABILITY IN GAPN LEDS, T.V.TORCHINSKAYA,

T.G.BERDINSKIKH, O.D.SMIYAN ISSN: 0026-2714, MICROELECTRONICS AND RELIABILITY

(UK), Vol.5, Pag.135-139, Revistas Arbitradas ,

1994 ; DEEP DEFECTS AND FIELD DEPENDENCE OF THEIR PARAMETERS IN INGAAS LAYERS, T.

Torchynska, V. Kooshnirenko, Proceeding ICEM 94, Taiwane, Vol. , Pag.153-156, Memorias de congresos

,

1993 ; INJECTIONENHANCED DEFECT REACTIONS IN IIIV LIGHT EMITTING DIODES,,

T.V.TORCHINSKAYA, A. Rybak Annual IEEE International Reliability Physics Is., (EEUU), 1994, v.32,

pp.454-457. ISBN 0780358600, IEEE INTERNATIONAL RELIABILITY PHYSICS (USA), Vol.4,


1993 ; KINETICS OF RED ALGAAS LIGHTEMITTING DIODES DEGRADATION, T.V.TORCHINSKA

ISSN: 0026-2714, MICROELECTRONICS AND RELIABILITY, Vol.4, Pag.845-857, Revistas

Arbitradas ,

1992 ; THE EFFECT OF AN AVALANCHE BREAKDOWN INFLUENCE ON MINORITY CARRIERS

LIFETIME IN LIGHT EMITTING DIODES,, T.V.Torchynska, Intern. Conf. Microelectronics and

computer science, Kishinev, Moldova, Vol.3, Pag.91-93, Memorias de congresos ,

1992 ; TRANSFORMATION OF EXCITONIC AND DALUMINESCENCE SPECTRA OF GAPN

LIGHTEMITTINGSTRUCTURES IN THE INTRODUCTION OF DISLOCATION,,

T.V.TORCHINSKAYA, N.E.KORSUNSKAYA, M.K.SHEINKMAN ISSN 0268-1242,

SEMICONDUCTOR SCIENCES AND TECHNOLOGY (UK), Vol.6, Pag.385-390, Revistas Arbitradas ,

1992 ; NATURE OF THE INSTABILITY OF THE LUMINESCENCE EMITTED BY GAPN STRUCTURES,

T.V.TORCHINSKAYA, T.G.BERDINSKIKH, O.D.SMIYAN, ISSN 0038-5700 Después 1991

Semiconductors ISSN 1063-7826, SOV. PHYS.SEMICONDUCTORS,ISSN 0038-5700, Vol.5, Pag.256-


1992 ; INJECTIONENHANCED TRANSFORMATION OF LUMINESCENCE SPECTRA OF GREEN

GAPN LIGHT EMITTING DIOD, T.V.TORCHINSKA, J. OF ELECTRONIC MATERIALS, ISSN

0361-5235 (USA), Vol.6, Pag.423-429, Revistas Arbitradas ,

1991 ; KINETICS OF THE RED ALGAAS LEDS DEGRADATION, T.V.TORCHINSKAYA,

V.A.VOROTINSKIY, ZH.S.ABDULAEV AND M.K.SHEINKMAN ISSN 0038-5662 Despues 1991 Tech.

Phys. ISSN 1063-7842, (SOV.PHYS.) TECHNIC. PHYSICS, ISSN 0038-5662, Vol.4, Pag.180-183,


1991 ; RED ALGAAS LIGHT EMITTING DIODE DEGRADATION KINETICS, T.V.TORCHINSKAYA, ZH.

TEKHN. FIZ., ISSN 1063-7842, Vol.6, Pag.98-103, Revistas Arbitradas ,

1991 ; DEGRADATION OF THE POLICRYSTAL PHOTORESISTORS BASED ON CDS CU CL THIN

FILMS, T.V.TORCHINSKAYA, I. Gorodetskiy ISSN 1605-6582, OPTOELECTRONICS AND

SEMICONDUCTOR TECHNICS (OPT, U, Vol.5, Pag.76-81, Revistas Arbitradas ,

1990 ; ¿RECOMBINATION-ENHANCED DEFECT REACTION IN III-V LIGHT EMITTING

STRUCTURES¿,, T.V. Torchynskaya,, XII USSR Conference ¿Physics of Semiconductors¿, Kiev, USSR,,


1990 ; ¿DEFECT CONTROL PROCESSES IN SEMICONDUCTORS ALGAAS HETEROSTRUCTURES¿,,

T.V. Torchynskaya,, XII USSR Conference ¿Physics of Semiconductors¿, Kiev, USSR,, Vol.3, Pag.75-78,


1990 ; INJECTIONED STIMULATED TRANSFORMATIONOFTHE GREEN LUMINESCENCE SPECTRA

OF GAPN LED, T.V.TORCHINSKAYA, A.G.KARABOEV,M.K.SHEINKMAN, ISSN 0038-5700 Después

1991 Semiconductors ISSN 1063-7826, SOV.PHYS. SEMICONDUCTORS, ISSN 0038-5700, Vol.7,


1990 ; IV CHARACTERISTIC TRANSFORMATION DURING GRADUAL ALGAAS LED

DEGRADATION, T.V.TORCHINSKAYA, QUANTUM ELECTRONICS, ISSN 1560-8034, Vol.6,


1990 ; GAP PHOTOLUMINESCENCE SPECTRA TRANSFORMATIONON THE INTRODUCTION OF

THE DISLOCATION, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA, M.K.SHEINKMAN, APPLIED.

SPECTROSCOPY J., ISSN 0021-9037, Vol.6, Pag.1161-1166, Revistas Arbitradas ,

1990 ; EXCITONIC AND DONORACCEPTOR LUMINESCENCE SPECTRA TRANSFORMATION IN

GAP LIGHT EMITTING STRUCTURES WITH APPEARING OF DISLOCATION,

T.V.TORCHINSKAYA ISSN 0021-9037, ZH. PRIKLADN. SPECTROS. (ZHPS, RUSSIA), Vol.7,


1989 ; JOINT MECHANISM OF THE DEFECT TRANSFORMATION IN LIGHT-EMITTING DIODES

UNDER DEGRADATION, RADIATION AND ULTRASOUND TREATMEN,, T.V. Torchynskaya,

International Conference ¿Physical problems of the optoelectronics¿, ¿OPTOELECTRONICS¿89¿,

Baku, USSR, Vol.2, Pag.128-129, Memorias de congresos ,

1989 ; GENERAL DEFECT TRANSFORMATION PROCESSES IN LIGHT-EMITTING DIODES UNDER

DEGRADATION, RADIATION AND ULTRASOUND TREATMENT., T.V. Torchynskaya, Reliability

forecast, Ukraine Conference¿Physical methods of the forecast in the quality control and reliability

tasks, Chernigov, September, Uk, Vol.3, Pag.150-152, Memorias de congresos ,

1989 ; FACTORS INFLUENCE ON GREEN GAP N LED DEGRADATION, T.V.Torchinskaya,

T.G.Berdinskikh, A.G.Karabaev, O.D.Smiyan, A.A.Trofimov, V.A.Denisyuk, B.I.Vishnevskaya, L.M.Kogan,

TEKHN. FIZIK ZH., ISSN 1063-7842, Vol.5, Pag.134-138, Revistas Arbitradas ,

1989 ; REASONS OF DEGRADATION OF RED ALGAAS GAAS HETEROSTRUCTURE

ELECTROLUMINESCENCE, T.V.TORCHINSKAYA and Zh.S.Abdulaev ISSN 1063-7842, TEKHN.

FIZIK. ZH, ISSN 1063-7842, Vol.4, Pag.175-178, Revistas Arbitradas ,

1989 ; CAUSES OF THE DEGRADATION OF ELECTROLUMINESCENCE IN RED ALGAAS

HETEROSTRUCTURES, T.V.TORCHINSKAYA , ZH.S.ABDULAEV ISSN 0038-5662 Despues 1991

Tech. Phys. ISSN 1063-7842, (SOV.PHYS.) TECHNIC. PHYSICS, ISSN 0038-5662, Vol.3, Pag.817-819,


1989 ; SOME REASONS OF FAST ALGAASGAAS INJECTION LASER DEGRADATION,

T.V.TORCHINSKAYA, QUANTUM ELECTRONICS, ISSN 1560-8034, Vol.6, Pag.24-30, Revistas

Arbitradas ,

1989 ; DEFECT TRANSFORMATION IN GAAS SI LEDS IN NONEQULIBRIUM CONDITION,

T.V.TORCHINSKAYA, G. Semenova ISSN: 0960-6068, UKR. FIZ. ZH. (UKRAINE J.OF PHYSICS)

ISSN: 0960-6068, Vol.6, Pag.1079-1084, Revistas Arbitradas ,

1989 ; DEGRADATION OF GREEN GAP LEDS AND FACTORS AFFECTING IT, T.V.TORCHINSKAYA,

T.G.BERDINSKIKH, A.G.KARABAEV, O.D.SMIYAN, A.A.TROFIMOV, V.A.DENISYUK,

B.I.VISHNEVSKAYA, L.M.KOGAN ISSN 0038-5662 Despues 1991 Tech. Phys. ISSN 1063-7842,

SOV.PHYS. TECHNIC. PHYSICS, ISSN 0038-5662, Vol.4, Pag.1036-1039, Revistas Arbitradas ,

1989 ; INJECTION ENHANCED DEFECT REACTIONS IN GAAS SI LEDS, T.V.TORCHINSKAYA,

QUANTUM ELECTRONICS, ISSN 1560-8034, Vol. , Pag.53-57, Revistas Arbitradas ,

1989 ; KINETICS OF THE INJECTION STIMULATED TRANSFORMATION OF THE DEFECTS IN

LIGHTEMITTING GAASSI STRUCTURES, T.V.TORCHINSKAYA, B.I.LEV, P.M.TOMCHUK AND

M.K.SHEINKMAN ISSN 0038-5700 Después 1991 Semiconductors ISSN 1063-7826, SOV.PHYS.


1989 ; DEEP CENTERS PARAMETERSIN ALGAAS LEDS ESTIMATED BY CAPACITANCE AND

INJECTION SPECTROSCOPE METHODS, M.Yu.Gusev, A.N.Zyuganov and T.V.Torchinskaya,

Zh.S.Abdulaev ISSN: 0960-6068, UKR. FIZ. ZH. (UKRAINE J. OF PHYSICS), Vol.7, Pag.1220-1226,


1988 ; DEEP CENTER TRANSFORMATION IN REDLEDS BASED ONALGAAS GAAS

HETEROSTRUCTUR, T.V.TORCHINSKAYA ISSN: 0960-6068, UKR. FIZ. ZH. ( UKRAINE J.OF

PHYSICS)ISSN: 0960-6068, Vol.5, Pag.1696-1702, Revistas Arbitradas ,

1988 ; SOME CAUSES OF THE INSTABILITY OF THE EMISSION FROM GAP N LIGHTEMITTING

DIODES, T.V.Torchinskaya, A.G.Karaboev, A.A.Shmatov, Zh.S. Abdulaev, M.K.Sheinkman ISSN: 0360-

120X Despues 1991 Tech. Phys. Lett. ISSN 1063-7850, SOV. TECH.PHYS.LETT, ISSN: 0360-120X,


1988 ; RECOMBINATIONENHANCED TRANSFORMATION OF DEEP CENTERS IN RED

LIGHTEMITTING ALGAAS DIODES, T.V.TORCHINSKAYA, A.A.SHMATOV AND

M.K.SHEINKMAN, PHYS. STAT. SOL. (A), ISSN 1862-6300, Vol.5, Pag.213-217, Revistas Arbitradas ,

1988 ; REASONES OF THE EMISSION INSTABILITY OF GAPN LEDS, T.V.TORCHINSKAYA,

A.G.KARABOEV, A.A.SHMATOV, PISMA. IN ZH.TEKHN. FIZIK., ISSN 1063-7850, Vol.7, Pag.1710-


1987 ; CONNECTION OF THE GAP N, ZN O DEGRADATION KINETICS WITH THE RED

LUMINESCENCE BAND INTENSITY, T.V. TORCHINSKAYA, PISMA IN TEKHN. FIZIK. ZH.,


1987 ; GREEN AND YELLOW GAP LEDS DEGRADATION. I I AND III STAGES, T.V.TORCHINSKAYA,

ELECTRONIC TECHNICS, Vol.7, Pag.67-73, Revistas Arbitradas ,

1987 ; ¿ELEMENTARY MECHANISMS OF THE PHOTOFATIGUE, AGING AND DEGRADATION

PROCESSES IN II-VI PHOTORESISTORS,, T.V.Torchynska,, 5-th USSR Conference ¿Physics and

Technical application of II-VI semiconductors¿, Vilnius, Vol.4, Pag.126-130, Memorias de congresos ,

1987 ; RELATIONSHIP BETWEEN THE DEGRADATION KINETICS OF GAP N, ZN O

LIGHTEMITTING DIODES AND THE INTENSITY OF THE RED EMISSION BAND, T.V.

TORCHINSKAYA AND M.K.SHEINKMAN ISSN: 0360-120X Despues 1991 Tech. Phys. Lett. ISSN 1063-

7850, SOV.TECHNIC.PHYSICS LETT, ISSN: 0360-120X, Vol.3, Pag.511-513, Revistas Arbitradas ,

1987 ; GREEN AND YELOW GAP LEDS DEGRADATION. I STAGE, T.V.TORCHINSKAYA, I. Puzin,

ELECTRONIC TECHNIQue, Vol.5, Pag.58-67, Revistas Arbitradas ,

1986 ; CONNECTION OF THE DEGRADATION PROCESS OF INGAAS>SI LED WITH THE

TRANSFORMATION OF STRUCTURAL DEFECTS,, T.V.Torchynska, 2-th USSR Conference

¿Physical base of Reliability and degradation of semiconductor devices¿, Kishinev,, Vol.4, Pag.58-62,


1986 ; CHANGES IN THE ELECTRICAL AND LUMINESCENCE CHARACTERISTICS OF INGAASSI

LIGHTEMITTING DIODES INDUCED BY ULTRASOUNDS, A.P.Zdebskii, T.V.Torchinskaya,

V.L.Korchnaya and M.K.Sheinkman,, PISMA IN TEKHN, FIZ. ZH. ,ISSN 1063-7850, Vol.6, Pag.76-81,


1986 ; CHANGES OF THE SPECTRAL CHARACTERISTICS OF THE INGAASSI LEDS STIMULATED

BY RADIATION, T.V.TORCHINSKAYA, ZH. PRIKL. SPECTROSCOP., Vol.5, Pag.252-256, Revistas

Arbitradas ,

1986 ; INFLUENCE OF IRRADIATION WITH SUBTHRESHOLD ELECTRONS ON THE SPECTRAL

CHARACTERISTICS OFINXGA1XASSI LIGHTEMITTING DIODES AND ON THE STRUCTURE

DEFECTS IN THE DIODES, G.N.Semenova, E.Yu.Brailovskiy, T.V.Torchinskaya and T.G.Berdinskich,

Yu.A.Tkhoric, M.K.Sheinkman ISSN 0038-5700 Después 1991 Semiconductors ISSN 1063-7826,

SOV.PHYS. SEMICONDUCTORS, ISSN 0038-5700, Vol.3, Pag.245-248, Revistas Arbitradas ,

1986 ; ULTRASONICALLY INDUCED CHANGES IN THE ELECTRICAL AND LUMINESCENCE

CHARACTERISTICS IN INGAASSI LIGHTEMITTING DIODES, A.P.ZDEBSKII,

T.V.TORCHINSKAYA, V.L.KORCHNAYA ANDM.K.SHEINKMAN, ISSN: 0360-120X Despues 1991

Tech. Phys. Lett. ISSN 1063-7850, SOV. TECHN. PHYS. LETT, ISSN: 0360-120X, Vol.3, Pag.31-33,


1986 ; PROCESSES IN THE CU2 SCDS HETEROSTRUCTURES UNDER PHOTOSTIMULATION,

T.V.TORCHINSKAYA M Mirzazhanov, ZH. PRIKL. SPECTROSCOP., ISSN 0021-9037, Vol.5, Pag.991-


1986 ; RADIATION STIMULATED VARIATIONS OF THE SPECTRAL CHARACTERISTIC IN THE

INGAASSI LEDS, T.V.Torchinskaya G.N.Semenova, E.Yu.Brailovskiy, and T.G.Berdinskich, APPLIED

SPECTROSCOPY J, ISSN 0021-9037, Vol.3, Pag.255-257, Revistas Arbitradas ,

1986 ; TRANSFORMATION OFDEEP CENTERS DURING DEGRADATION OFGAPN,ZNO

LIGHTEMITTING DIODES, T.V.TORCHINSKAYA, A.A.SHMATOV , V.I.STRICHKOV AND

M.K.SHEINKMAN, ISSN 0038-5700 Después 1991 Semiconductors ISSN 1063-7826, SOV.

PHYS.SEMICONDUCTORS, ISSN 0038-5700, Vol.5, Pag.442-446, Revistas Arbitradas ,

1986 ; PHOTOSTIMULATED PROCESSES IN THE CU2 SCDS HETEROSTRUCTURES,

T.V.TORCHINSKAYAANDM.A.MURZAZHANOV,, APPLIED SPECTROSCOPY J., ISSN 0021-9037,


1985 ; EFFECT OF LOW DOSE AND DEGRADATION KINETICS OF INXGA1XASSI LIGHTEMITTING

DIODES, T.V.TORCHINSKAYA, PISMA TEKHN. FIZIK. ZH., ISSN 1063-7850, Vol.3, Pag.1114-1116,


1985 ; REASONE OF THE DEGRADATION OF CERAMIC SOLAR CELLS OF CUS CDS TYPES,

T.V.Torchinskaya, M.A.Mirzazhanov and A.I.Marchenko,, Applied Solar Energy (English translation of

Geliotekhnika), ISSN: 0003-701X, Vol.4, Pag.16-20, Revistas Arbitradas ,

1985 ; INVESTIGATION OF THE PHOTOFATIGUE PROCESS IN THE CUS-CDS SOLAR CELLS,,

T.V.Torchynska,, V-th USSR Conference ¿Physics and Technical application of the II-VI

semiconductors¿, Vilnus, Litva, Vol.3, Pag.173-175, Revistas Arbitradas ,

1985 ; SMALL DOSE EFFECT AND DEGRADATION RESISTANCEOF INXGA1XASSI

LIGHTEMITTING DIODES, T.V.TORCHINSKAYA, G.N.SEMENOVA AND T.G.BERDINSKIKH

ISSN: 0360-120X Despues 1991 Tech. Phys. Lett. ISSN 1063-7850, SOV. TECHN. PHYS. LETT, ISSN:

0360-120X, Vol.3, Pag.462-463, Revistas Arbitradas ,

1985 ; STABILIZATION OF CDS CU CL PHOTORESISTOR PARAMETERS AT LOW TEMPERATURE

PHOTOTREATMENT, T.V.TORCHINSKAYA, ELECTRONIC TECHNIQ., Vol.4, Pag.38-41, Revistas

Arbitradas ,

1984 ; Connection of the solid solution decay with aging and degradation processes for devices based on II-VI

thin films, Proc. All Union Conference ¿Physics of the thin films¿, Ivano-Frankovsk, 1984, p.341,

Ukraine., T.V.Torchynska, All Union Conference ¿Physics of the thin films¿, Ivano-Frankovsk, ,

Ukraine., Vol. , Pag.341-345, Memorias de congresos ,

1984 ; ANALYSIS OF ELEMENTARY DEGRADATION MECHANISMS OF THE CU2 S CDS SOLAR

CELLS, T.V.TORCHINSKAYA AND M.A.MIRZAZHANOV,, EXPERIMENTELLE TECHNIK

DER.PHYSIK, Vol.6, Pag.175-180, Revistas Arbitradas ,

1984 ; EXCESS CURRENTS AND STRUCTURE DEFECTS IN INGAASSI LIGHTEMITTING DIODES,

T.V.TORCHINSKAYA, G.N.SEMENOVA, E.YU BRAILOVSKII, L.A.MATVEEVA,

M.A.MIRZAZHANOV, T.G.BERDINSKIKH, I.B.PUZIN, N.ARIAS ISSN 0038-5700 Después 1991

Semiconductors ISSN 1063-7826, SOV.PHYS. SEMICONDUCTORS, ISSN 0038-5700, Vol.4, Pag.875-


1984 ; INVESTIGATION OF ELEMENTARY DEGRADATION MECHANISMS INCU2SCDS

HETEROCONVECTORS, T.V.TORCHINSKAYA,, Applied Solar Energy (English translation of

Geliotekhnika , ISSN: 0003-701X, Vol.4, Pag.12-15, Revistas Arbitradas ,

1984 ; INVESTIGATION OF THE AGING OF SOLAR CELLS OF CU2SCDS TYPES, T.V.Torchinskaya,

M.A.Mirzazhanov and A.I.Marchenko,, Applied Solar Energy (English translation of Geliotekhnika,

ISSN: 0003-701X, Vol.4, Pag.6-11, Revistas Arbitradas ,

1984 ; UV LIGHT ENHANCED DEFECT DIFFUSION IN CDS, T.V.TORCHINSKAYA and A.A.Anaev, UKR.

FIZ. ZH. ( UKRAINE J.OF PHYSICS) ISSN: 0960-6068, Vol.4, Pag.851-854, Revistas Arbitradas ,

1984 ; RESEARCH OF THE REVERSE DEGRADATION IN CU2 SCDS HETEROJUNCTIONS,

T.V.TORCHINSKAYA, A.I.MARCHENKO AND M.A.MIRZAZHANOV, G.I.SHEREMETOVA,

APPLIED SPECTROSCOPY J, ISSN 0021-9037, Vol.5, Pag.1174-1178, Revistas Arbitradas ,

1984 ; RESEARCH OF THE SINKS NATURE FOR THE EXCESS ATOMS IN POLYCRYSTAL CDSCUCL

FILMS, T.V.TORCHINSKAYA and L.N.Baidokha, INORGANIC MATERIALS,ISSN: 0020-1685, Vol.3,


1984 ; STUDY OF THE REVERSIBLE DEGRADATION PROCESS IN CU2 SCDS HETEROJUNCTIONS,

T.V.TORCHINSKAYA, ZH. PRIKL.SPECTROSCOPY, ISSN 0021-9037, Vol.3, Pag.1174-1176, Revistas

Arbitradas ,

1984 ; THE CAUSE OF INSTABILITY OF CDSCUCL PHOTORESISTORS AND METHODS OF ITS

REMOVAL, T.V.TORCHINSKAYA, L.N.BAIDOKHA AND M.YA.RAKHLIN,, EXPERIMENTELLE.

TECHNIK DER PHYSIK, Vol.6, Pag.271-276, Revistas Arbitradas ,

1984 ; NEW METHOD OF NONDESTROYED CONTROL OF THE PHOTORESISTOR QUALITY,

T.V.TORCHINSKAYA, ELECTRONIC TECHNIQUE, Vol.4, Pag.3-7, Revistas Arbitradas ,

1983 ; AGING PROCESSES AND RECOMBINATION CENTRE PARAMETERS IN PHOTORESISTORS

BASED ON CDSCUCL THIN FILMS, T.V.Torchinskaya , L.N.Baidokha, I.Ya. Gorodezhkii, UKR. FIZ.

ZH. (UKRAINE J.OF PHYSICS)ISSN: 0960-6068, Vol.5, Pag.918-923, Revistas Arbitradas ,

1983 ; LEAKAGE CURRENT IN SI PIN DIODS, T.V.TORCHINSKAYA ISSN: 0960-6068, UKR. FIZ. ZH.

(UKRAINE J.OF PHYSICS)ISSN: 0960-6068, Vol.4, Pag.268-271, Revistas Arbitradas ,

1983 ; PHYSICAL MECHANISM OF LEDS ANDLASERS DEGRADATION, T.V.TORCHINSKAYA, ZH.

PRIKL. SPECTR., ISSN 0021-9037, Vol.9, Pag.371-379, Revistas Arbitradas ,

1983 ; Photostimulated creation and transformation local centers in II-VI semiconductors,, T.V.Torchynskaya,,

V USSR Conference ¿Radiation physics and chimistry of ionic crystals¿, Riga, USSR, Vol.3, Pag.7-9,


1983 ; PHYSICAL NATURE OF LEDS AND SEMICONDUCTOR LASERS DEGRADATIONS,

T.V.TORCHINSKAYA, M.K.SHEINKMAN,, APPLIEDSPECTROSCOPY J., ISSN 0021-9037, Vol.8,


1983 ; ¿The decreasing of the deep recombination centers in the IMPATT diodes¿,, Ismailov K.A., Konakova

R.V., Torchynskaya, L. Shcherbyna, 4-th ¿Lund¿ International Conference on deep level impurities in

semiconductors, may 1983, Hungary,, Vol.3, Pag.13-15, Memorias de congresos ,

1983 ; SMALL RADIATION DOSE EFFECTS IN SILICON HFDIODS, T.V.TORCHINSKAYA,

ELECTRONIC TECHNICS, Vol.4, Pag.35-38, Revistas Arbitradas ,

1982 ; Aging and fatigue processes in solar cells,, T.V.Torchynska, 1-th Union Conference¿Physical bases of

reliability and degradation of semiconductor devices¿, Kishinev,Moldova, Vol.4, Pag.22-25, Memorias de

congresos ,

1982 ; ¿ Mechanisms of photostimulayed defect formation in II-VI crystals and devices based on it¿,,

T.V.Torchinskaya, II-th Ukrainian Conference ¿Photoelectric phenomena in Semiconductors¿, Odessa,

USSR,, Vol.3, Pag.23-25, Memorias de congresos ,

1982 ; HIGH FREQUENCY NOISE CORRELATION WITH REVERSE IV CHARACTERISTICS IN SI

DIODES, T.V.TORCHINSKAYA, L.V.SHCHERBINA,P.P.LOSHIZKIY,, ELECTRONIC TECHNIQUE,


1982 ; AGING PROCESSESIN PHOTORESISTOR BASED ON CDS CUCLTHIN FILMS,

T.V.TORCHINSKAYA, ELECTRONIC TECHNIQUE, Vol.3, Pag.3-5, Revistas Arbitradas ,

1982 ; ¿Mechanism of the photostimulated defect transformation in semiconductors¿,, N.E.Korsunskaya,

I.V.Markevich, T.V.Torchynskaya,, USSR Conference ¿Physics of Semiconductors¿, Baku, USSR,, Vol.2,


1982 ; ANALYSIS OF THE PHYSICAL PROCESSESRESPONSIBLE FOR THE INSTABILITY OF

PHOTORESISTORS BASED ON II VI MATERIALS, N.E.Korsunskaya, I.V.Markevich,

T.V.Torchinskaya and A.M.Pavelez ISSN 1605-6582, OPTOELECTRONICS AND

SEMICONDUCTORTEKHNIQUE, Vol.4, Pag.98-100, Revistas Arbitradas ,

1982 ; PHOTODEGRADATION INVESTIGATION IN PHOTORESISTORS BASED ON POLICRYSTAL

CDS CU CL FILMS, T.V.TORCHINSKAYA M.YA.RACHLIN, L.N.BAIDOKHA, L.F.ZHAROVSKII,

APPLIED SPECTROSCOPY J, N, ISSN 0021-9037, Vol.7, Pag.589-595, Revistas Arbitradas ,

1982 ; STUDIES OF THE PHOTOFATIQUE OF PHOTORESISTORS BASED ON CDSCUCL

POLYCRYSTAL FILMS, T.V.TORCHINSKAYA, ZH. PRIKL. SPECTROSCOP., ISSN 0021-9037,


1982 ; Photostimulated processes in CdS-CuS solar cells,, T.V.Torchynska, II-th Ukrainian Republic

Conference ¿Photoelectric phenomena in Semiconductors¿, Odessa, USSR, Vol.4, Pag.222-225,


1982 ; THE RECHARGE ENHANCED TRANSFORMATIONOF DONOR ACCEPTOR PAIRS AND

CLUSTERS IN CDS, N.E.KORSUNSKAYA, I.V.MARKEVICH , T.V.TORCHINSKAYA AND

M.K.SHEINKMAN, J. PHYS. CHEM. SOLIDS, ISSN: 0022-3697, Vol.9, Pag.475-483, Revistas

Arbitradas ,

1981 ; ¿Physical nature of the degradation of light emitting diodes and semiconductor lasers¿,, T.V.Torchynska,

USSR Conference of Luminescence, Leningrad, Vol.4, Pag.12-15, Memorias de congresos ,

1981 ; CENTER TRANSFORMATION PROCESSES AND SEMICONDUCTOR LASER PARAMETER

DECREASES,, T.V.TORCHINSKAYA AND M.K.SHEINKMAN,, QUANTUM ELECTRONICS J., ISSN


1981 ; Alteration of the Luminescence spectra of sintered layers of CdS:Cu:CL due to photoenhanced

processes, N.E.Korsunskaya, I.V.Markevich, T.V.Torchinskaya, A.M.Pavelez, S.A.Supko, G.A.Fedorus,

APPLIED SPECTROSCOPY J., ISSN 0021-9037, Vol.3, Pag.1101-1103, Revistas Arbitradas ,

1981 ; PHOTO DEGRADATION MECHANISMS IN PHOTORESISTORS BASED ON CDS CU CL

CONGLOMERATED LAYERS, N.E.Korsunskaya, I.V.Markevich, T.V.Torchinskaya, A.M.Pavelez,

S.A.Sipko ISSN: 0960-6068, UKR. FIZ. ZH. (UKRAINE J.OF PHYSICS), Vol.6, Pag.1335-1340, Revistas

Arbitradas ,

1981 ; PHOTOENHANCED PROCESSES AND LOCAL CENTRE INTERACTION IN ZNSE

MONOCRYSTALS, N.E.Korsunskaya, Krivko T.G., I.V.Markevich and T.V.Torchinskaya, M.K.Sheinkman,

ISSN: 0960-6068, UKR. FIZ. ZH. (UKRAINE J.OF PHYSICS), Vol.6, Pag.662-667, Revistas Arbitradas ,

1981 ; CHANGES OF THE LUMINESCENCE SPECTRA AT PHOTOSTIMULATED PROCESSES IN

ANNEALED CDS CU CL LAYERS, T.V.TORCHINSKAYA,, ZH. PRIKL. SPECTROSCOP., ISSN


1980 ; ¿Mechanisms of photochemical Reactions in Semiconductors,, N.E.Korsunskaya, I.V.Markevich,

T.V.Torchinskaya, II-USSR Conference ¿Physics of Deep defects in Semiconductors ¿, Tashkent SU,,

Vol. , Pag.98-102, Memorias de congresos ,

1980 ; ¿ Photo (recombination) enhanced local center transformation in CdS and ZnSe monocrystals¿,,

N.E.Korsunskaya, I.V.Markevich, T.V.Torchinskaya, Int. Conference ¿Radiation defects in

Semiconductors and Related materials¿, Tbilissi, USSR,, Vol. , Pag.676-679, Memorias de congresos ,

1980 ; Memory effects, stimulated by the low temperature annealing or doping in CdS crystals, Torchynskaya

T.V.,, VI International Conference Optics and Photoelectric phenomena in Solid State¿, Varna,

Bulgaria, Vol.3, Pag.13-15, Memorias de congresos ,

1980 ; ¿Mechanisms of photochemical Reactions in Semiconductors,, N.E.Korsunskaya, I.V.Markevich,

T.V.Torchinskaya,, II-USSR Conference ¿Physics of Deep defects in Semiconductors ¿, Tashkent SU,


1980 ; NEW LUMINESCENCE BAND IN CDS CRYSTALS DOPED WITH LI,,

N.E.Korsunskaya,I.V.Markevich, T.V.Torchinskaya and B.M.Bulakh, ISSN: 0960-6068, UKR. FIZ. ZH.

(UKRAINE J.OF PHYSICS), Vol.3, Pag.511-513, Revistas Arbitradas ,

1980 ; RECOMBINATION STIMULATED CONVERSION OF COMPLEX LUMINESCENCE CENTRES

IN CDS CRYSTALS, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND

M.K.SHEINKMAN ISSN 0038-5700 Después 1991 Semiconductors ISSN 1063-7826, SOV. PHYS.

SEMICONDUCTO, ISSN 0038-5700, Vol.4, Pag.259-262, Revistas Arbitradas ,

1980 ; PHOTOSENSITIVITY DEGRADATION MECHANISM IN CDSCU SINGLE CRYSTALS,

N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND M.K.SHEINKMAN, PHYS.

STAT. SOLID (A), ISSN 1862-6300, Vol.8, Pag.565-572, Revistas Arbitradas ,

1980 ; SHALLOW DONOR ROLE IN PROCESS OF PHOTOCONDUCTIVITY DEGRADATION IN

CDSCU CRYSTALS, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND

M.K.SHEINKMAN, PISMA IN TEKHN. FIZ. ZH., ISSN 1063-7850, Vol.5, Pag.120-124, Revistas

Arbitradas ,

1980 ; ELECTRODIFFUSION OF DEEP DONORS IN CDSCU CRYSTALS, M.K.SHEINKMAN,

N.E.KORSUNSKAYA, I.V.MARKEVICH AND T.V.TORCHINSKAYA ISSN 0038-5700 Después 1991

Semiconductors ISSN 1063-7826, SOV. PHYS. SEMICONDUCTORS, ISSN 0038-5700(USA), Vol.3,


1980 ; ELECTRODIFFUSION OF SHALLOW DONORS IN CDS CRYSTALS, N.E.KORSUNSKAYA,

I.V.MARKEVICH, T.V.TORCHINSKAYA AND M.K.SHEINKMAN, J.PHYS.C. SOLID STAT.PHYS.,

ISSN 0022-3719 (Print), Vol.4, Pag.2975-2978, Revistas Arbitradas ,

1980 ; ROLE OFSHALLOW DONORS IN PHOTOCONDUCTIVITY DEGRADATION IN CDSCU

CRYSTALS, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND M.K.SHEINKMAN

ISSN: 0360-120X Despues 1991 Tech. Phys. Lett. ISSN 1063-7850, SOV.TECHN. PHYS. LETT, ISSN:

0360-120X, Vol.4, Pag.53-55, Revistas Arbitradas ,

1979 ; Transformation of donor-acceptor pairs and complexes in CdS crystals under the light excitation¿,

N.E.Korsunskaya, I.V.Markevich, T.V.Torchinskaya, I-st Ukrainian Republic Conference ¿Photoelectric

Phenomena in Semiconductors¿, Uzhgorod, USSR, Vol. , Pag.216-220, Memorias de congresos ,

1979 ; Mechanism of the photoconductivity degradation in CdS: Cu single crystals¿,, N.E.Korsunskaya,

I.V.Markevich, T.V.Torchinskaya,, I-st Ukrainian Republic Conference ¿Photoelectric Phenomena in

Semiconductors¿, Uzhgorod, USSR, Vol.2, Pag.146-147, Memorias de congresos ,

1979 ; INVESTIGATION OF THE DRIFT OF DEFECTS IN CDSLI CRYSTALS SUBJECTED TO

ELECTRIC FIELD, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND

M.K.SHEINKMAN ISSN 0038-5700 Después 1991 Semiconductors ISSN 1063-7826, SOV.PHYS.


1979 ; COMPLEX NATURE OF THE CENTERS RESPONSIBLE FOR THE GREEN EDGE

LUMINESCENCE EMITTED FROM CDS CRYSTA, N.E.Korsunskaya, I.V.Markevich,

T.V.Torchinskaya and M.K.Sheinkman and N.M.Krolevez, ISSN 0038-5700 Después 1991 Semiconductors

ISSN 1063-7826, SOV. PHYS. SEMICONDUCTORS , ISSN 0038-5700(USA), Vol.3, Pag.1058-1060,


1979 ; INVESTIGATION OF LOCAL CENTER INTERACTION IN CDS CRYSTALS AND LIGHT

INDUCED VARIATION OF THIS INTERACTION, N.E.KORSUNSKAYA, I.V.MARKEVICH,

T.V.TORCHINSKAYA AND M.K.SHEINKMAN, RADIOTECHNICS ELECTRONICS, ISSN 0033-


1979 ; SPECTROSCOPIC STUDY OF THE INTERACTION OF LOCAL CENTRES IN CDS CRYSTALS

AND THE CHANGE IN THIS INTERACTION WITH ILLUMINATION, N.E.KORSUNSKAYA,

I.V.MARKEVICH, T.V.TORCHINSKAYA AND M.K.SHEINKMAN ISSN 0033-7889, RADIO

ENGEINERING AND ELECTRONIC PHYSICS (USA), Vol.5, Pag.132-136, Revistas Arbitradas ,

1978 ; PECULIARITIES OF THERMOSTIMULATED CONDUCTIVITY AND OPTICAL QUANCHING

OF THE PHOTOCURRENT IN CRYSTALS WITH THE AUGER EXCITATION OF

RECOMBINATION CENTERS, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND

M.K.SHEINKMAN ISSN 1862-6300, PHYS. STAT. SOLIDI (A), Vol.4, Pag.767-770, Revistas Arbitradas

,

1977 ; Investigation of new luminescence band and photochemical radiation center transformation in CdS:Li

monocrystals¿,, T.V.Torchinskaya,¿, Inter. Conference ¿ Science and Technique. of New Materials¿,

Moscow, USSR,, Vol.4, Pag.257-260, Memorias de congresos ,

1977 ; AUGERE XCITATION MECHANISM OF 1,62,0 MKM LUMINESCENCE BAND IN CDS CRYSTA,

N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA ISSN 0038-5700 Después 1991

Semiconductors ISSN 1063-7826, (SOV.PHYS.) SEMICONDUCTORS, ISSN 0038-5700, Vol.3, Pag.1380-


1977 ; INVESTIGATION OF THE NATURE OF THE RECOMBINATION CENTERS RESPONSIBLE FOR

THE 0,95MKM LUMINESCENCE BAND OF CDS, N.E.KORSUNSKAYA, T.V.TORCHINSKAYA,

I.V.MARKEVICH, ISSN 0038-5700 Después 1991 Semiconductors ISSN 1063-7826, SOV.PHYS.


1977 ; CHARACTERISTICS OF THE AUGER EXCITATION SPECTRA OF THE

PHOTOLUMINESCENCE AND PHOTOCURRENTIN COMPENSATED CDS CRYSTALS,

N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND V.V.DYAKIN, ISSN 0038-5700

Después 1991 Semiconductors ISSN 1063-7826, SOV.PHYS. SEMICONDUCTORS , ISSN 0038-5700

(USA), Vol.3, Pag.332-334, Revistas Arbitradas ,

1977 ; COMPLEX NATURE OF DEEP LUMINESCENCECENTERS IN CDS CRYSTALS,

N.E.KORSUNSKAYA, I.V.MARKEVICH I.V., T.V.TORCHYNSKAYA, M.K. SHEINKMAN,

SOV.PHYS.SOLID STATE, ISSN 0367-3294, Vol.4, Pag.130-133, Revistas Arbitradas ,

1977 ; DONOR ACCEPTOR INTERACTIONS AND PHOTOCHEMICAL REACTIONS DIFFERENT

TYPES IN MONOCRYSTALS CDS, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA

AND M.K.SHEINKMAN ISSN: 0960-6068, UKR. FIZ. ZH. (UKRAINE J.OF PHYSIC, Vol.7, Pag.363-


1976 ; BULK CHARGE INVESTIGATION IN NBO FILMS, T.V.TORCHINSKAYA, G.I.BOGDAN. ,

E.G.ZAKHAREVICH, SEMICONDUCTOR TEKHNICS AND MICROELECTRONICS, Vol.4, Pag.62-


1976 ; INVESTIGATION OF BULK CHARGE DEPENDENCE ON NBO FILM STRUCTURES,

T.V.TORCHINSKAYA, G.I.BOGDAN, S.I.BOZHKO,, IZV. VUZ.,SER. RADIOELECTRONICS, Vol.3,


1976 ; INVESTIGATION OF HUMIDITY PENETRATION IN PROTECTION LAYER BASED ON

BOTOSILICAT GLAsses, T.V.TORCHINSKAYA, G.I.BOGDAN, T.I.KLETCHENKOV,

SEMICONDUCTORS AND INSULATORS, Vol.6, Pag.41-46, Revistas Arbitradas ,

1976 ; RADIATIVE AND NONRADIATIVE TRANSITIONS MECHANISM AND DEEP CENTERS IN II-VI

COMPOUNDS and Nature of radiative defects, M.K.SHAINKMAN, N.KORSUNSKAYA,

I.MARKEVICH, IT.V.TORCHYNSKA, IZV, SOV, ACAD, SCIEN. ,PHYSICS, Vol.8, Pag.2290-2297,


1976 ; PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY OFCDS LI SINGLE CRYSTALS,

N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKAYA AND M.K.SHEINKMAN ISSN 0038-

5700 y Después 1991 Semiconductors ISSN 1063-7826, SOV.PHYS.SEMICONDUCTORS, ISSN 0038-


1976 ; EMISSION CENTERS AND RADIATIVE AND RADIATIONLESS TRANSITION MECHANISM IN

II-VI COMPOUNDS, M.K.SCHEINKMAN, N.E.KORSUNSKAYA, T.V.TORCHINSKAYA,

I.V.MARKEVICH ISSN 0568-5230 despues 1991, ISSN 1062-8738, IZV. AKAD.NAUK . FIZIKA, ISSN


1976 ; INVESTIGATION OF THE STRUCTURE AND BULK CHARGE OF NBO FILMS AFTER AGING,

T.V.TORCHINSKAYA, G.I.BOGDAN, S.I.BOZHKO, SEMICONDUCTORS AND INSULATORS, Vol.3,


1975 ; BULK CHARGE CONNECTION WITH NONLINEAR EFFECTS IN NBO FILMS,

T.V.TORCHINSKAYA, L.V.SHCHERBINA, G.I.BOGDAN, IZV. BINITI, Vol.5, Pag.222-227, Revistas

Arbitradas ,

LIBROS

2014

;

SPECIAL ISSUE IMRC 2013 OF THE PHYSICA B JOURNAL, Editores: T.V.Torchynska, L. Khomenkova, G.

Polupan, G. Burlak, ELSEVIER, ISBN0921-4526

2014

; MRS PROCEEDINGS, IMRC 2013 MEETING, SYMP.7E LIBRO ¿ LOW-DIMENSIONAL SEMICONDUCTOR

STRUCTURES¿:, Editores: T.V. Torchynska, L. Khomenkova, G. Polupan, G. Burlak Cambridge University Press

(http://journals.cambridge.org/opl)., CAMBRIDGE UNIVERSITY PRESS, ISBN978-1-60511-594-8

2013

;

SPECIAL ISSUE OF PHYSICA E (ELSEVIER), Editores T.V. Torchynska, Yu. Vorobiev, Zs. Horvath, Selected papers

presented at IMRC2012, ELSEVIER, ISBN1386-9477

2012

; MRS ONLINE PROCEEDINGS, IMRC 2012 SYMPOSIUM 6B,

HTTP://JOURNALS.CAMBRIDGE.ORG/ACTION/DISPLAYISSUE?JID=OPL&VOLUMEID=1534&IID=8853676,

Editors: T.V. Torchynska, Yu. Vorobiev, Zs. Horvath at the first it was published on line in 2012, v. 1534, and in 2013 these

papers were included in MRS proceeding v.1617 published as the book, ISBN: 978-1-60511-594

http://journals.cambridge.org/action/displayIssue?jid=OPL&volumeId=1534&iid=8853676 Cambridge University Press)

(http://journals.cambridge.org/opl). http://journals.cambridge.org/action/

displayIssue?jidOPL&volumeId=1534&iid=885367, CAMBRIDGE ONLINE LIBRARY, ISBNONLINE

2010

;

NANOCRYSTALS AND QUANTUM DOTS OF GROUP IV SEMICONDUCTORS, T.V.Torchynska, Yu. Vorobiev

(Editors), AMERICAN SCIENTIFIC PUBLISHER, ISBN1-58883-154-X

2006

;

MEMORIAS 11A REUNION NACIONAL ACADEMICA DE FISICA Y MATEMATICAS, Comite Editorial J.

Palacios Gomez, R. Acosta Abreu, F. Chavez Rivas, T. Torchynska, T. Kryshtab, F. Cruz Gandarilla, L.L. Gonzalez

Ramirez, INSTITUTO POLITECNICO NACIONAL, ISBN

1997

;

MECHANISMS OF DEGRADATION OF III-V SEMICONDUCTOR LIGHTEMITTING DIODES AND LASERS,

T.V.Torchynska, T.E.Berdinskikh, HARWOOD ACADEMIC PUBLISHER, ISBN90-5702-206-O

1995

;

THIN FILMS IN ELECTRONICS, Editores S.K. Sheinkman, T.V. Torchynska....., ACADEMIA DE CIENCIAS

UCRANIA, ISBN97-5316-413-1

1990

; DEFECT TRANSFORMATION PROCESSES IN LIGHT EMITTING AND PHOTOELECTRONICS

STRUCTURES, T. V. Torchynska Libro de docencia, "NAUKOVA DUMKA", ISBN00-1210-879-9

1990

;

"PHYSICS OF SEMICONDUCTORS", the set of authores M.K. Sheinkman, Yu. Shepelskii, T.V.Torchynska,.....,

"NAUKOVA DUMKA", ISBN12-0026-223-0

1986

;

PHYSICAL BASE OF RELIABILITY AND DEGRADATION OF SEMICONDUCTOR DEVICES,, The set of

authores M.K.Sheinkman, T.V.Torchynska, O. Snitko,...., "MIR", ISBN01-2995-315-0

1982

;

PHOTOELECTRICAL PHENOMENA IN SEMICONDUCTORS,, M.K..Sheinkman, T.V.Torchynska, N. Korsunska,

E. Salkov, O. Snitko, "NAUKOVA DUMKA", ISBN17-0401-535-0

1979

;

PHOTOELECTRICAL PHENOMENA IN SEMICONDUCTORS, M.K.Sheinkman, T.V.Torchynska, E. Salkov, O.

Snitko., NAUKOVA DUMKA, ISBN20-0400-557-0

1978

; THE STUDY OF MECHANISM OF PHOTOCHEMICAL REACTION AND PHOTOCURRENT DEGRADATION

IN II-VI SEMICONDUCTORS, T.V. Torchynska Libro de docencia, "NAUKOVA DUMKA", ISBN02-2534-301-9

1976

; MEMORIAS DE IV USSR CONFERENCE ¿PHYSICS, CHEMISTRY AND TECHNICAL APPLICATIONS OF II-

VI SEMICONDUCTORS¿, ODESSA, USSR, 1976., Editores, E. Salkov, M. Sheinkman, Yu. Shepelskii,

T.Torchynska,.O. Snitko, ACADEMIA DE CIENCIAS, UCRANIA, ISBN012-23-4356-0

CAPITULOS DE LIBROS

2015 ; "Physical reasons of emission varying in CdSe/ZnS and CdSeTe/ZnS quantum dots at bioconjugation to

antibodies",, " Quantum Dots - Theory and Applications", p. 151-180, 2015, InTech Publisher, Croatia, ISBN

978-953-51-2155-8, EDITED BY VASILIOS N. STAVROU, INTECH , CROATIA,, Vol. 1, Pags. 30,

Tetyana Torchynska

2012 ; INAS QUANTUM DOTS IN SYMMETRIC INGAAS/GAAS QUANTUM WELLS, Quantum Dots /

Book 1.Fingerprints in the Optical and Transport Properties of Quantum Dots, DR. AMEENAH AL-

AHMADI,ISBN: 979-953-307-308-7, INTECH PUBLISHER, CROATIA, Vol. 1, Pags. 27,

T.Torchynska,INTECH PUBLISHER, CROATIA, ISBN: 979-953-307-308-7

2011 ; SEMICONDUCTOR II-VI QUANTUM DOTS WITH INTERFACE STATES AND THEIR

BIOMEDICAL APPLICATIONS,, Advanced Biomedical Engineering, ISBN 978-953-307-555-6

GAETANO D. GARGIULO, (CO-EDITOR): ALISTAIR MCEWAN (ED.),, INTECH PUBLISHER,

CROATIA, Vol. 1, Pags. 43, Tetyana Torchynska and Yuri Vorobiev, ISBN 978-953-307-555-6

2010 ; OPTICAL PROPERTIES OF NANOCTRUCTURES MATERIALS, Nanocrystals and quantum dots of

group IV semiconductors, ISBN: 1-58883-154-X T.V.TORCHYNSKA, YU.V. VOROBIEV, AMERICAN

SCIENTIFIC PUBLISHER, Vol. 1, Pags. 35, Yu. V. Vorobiev, T. V. Torchynska

2010 ; SIC NANOCRYSTAL STRUCTURES, Nanocrystal and quantum dots of group IV semiconductors, ISBN:

1-58883-154-X T.V.TORCHYNSKA, YU. V. VOROBIEV, AMERICAN SCIENTIFIC PUBLISHER, Vol.

1, Pags. 31, T. V. Torchynska , L.V. Shcherbyna

2010 ; SI AND GE QUANTUM DOT STRUCTURES, Nanocrystals and quantum dots of group IV

semiconductors, ISBN: 1-58883-154-X T.V.TORCHYNSKA, YU. V. VOROBIEV,, AMERICAN

SCIENTIFIC PUBLISHER, Vol. 1, Pags. 44, T.V.Torchynska,

2010 ; NANOCRYSTALS AND QUANTUM DOTS. SOME PHYSICAL ASPECTS, Nanocrystals and quantum

dots of group IV semiconductors, ISBN: 1-58883-154-X T. V. TORCHYNSKA, YU. V. VOROBIEV,

AMERICAN SCIENTIFIC PUBLISHER, Vol. 1, Pags. 40, T. V. Torchynska

ISBN: 1-58883-154-X

2008 ; PHOTOLUMINESCENCE OF DIFFERENT PHASE SI NANOCLUSTERS IN A-SI(ISBN: 978-1-

60511-077-6), Amorphous and Polycrystalline Thin film silicon Science and Technology, American MRS

Proceeding,(ISBN: 978-1-60511-077-6) A. NATHAN, A. FLEWITT, J. HOU, S. MIYAZAKI, J. YANG,

AMERICAN MRS PRESS, Vol. 1066, Pags. 05, Tatyana V. Torchynska

2006 ; RAMAN STUDY OF BIOCONJUGATED CDSE/ZNS QDS (ISBN 5-93634-019-8), Nanostructures:

Physics and Technology (ISBN 5-93634-019-8) ZH. ALFEROV, L. ESAKI, IOFFE INSTITUTE ST.

PETERSBURG, Vol. 14, Pags. 04, T.V.Torchynska, A. Diza Cano, S. Ostapenko, Yu. V. Vorobiev, S.

Jimenez Sandoval, J. Gonsales, T. Zhukov

2006 ; PREPARATION AND INVESTIGATION OF SIC POROUS SUB MICRON LAYERS ON THE

SUBSTRATE OF SI NANOWIRES(ISBN 970-36-0355-6), Mmemorias de 9 Congreso Nacional de

Ingenieria electromecanica y de sistemas (ISBN 970-36-0355-6) D. R. VEGA, IPN, MEXICO, Vol. 1, Pags.

1, A. Diaz Cano, M. Moralez Rodriguez, T. Torchynska, S. Saddow, Zh. Shiskin, S. Jimenez Sandoval, G. R.

Paredes Rubio,

2005 ; MULTI EXCITED STATE PHOTOLUMINESCENCE MAPPING ON INAS/INGAAS QD

STRUCTURES (ISBN 5-93634-017-1), Nanostructures: Physics and Technology, (ISBN 5-93634-017-1)

ZH. ALFEROV, L. ESAKI,, IOFFE INSTITUTE ST PETERSBURG, Vol. 13, Pags. 392, T.V.Torchynska,

M. Dybiec, P. G. Eliseev

2005 ; PHOTOLUMINESCENCE MECHANISM IN SI AND GE NANOCRYSTALLITES EMBEDDED IN

DIFFERENT TYPES OF MATRIXES, Semiconductor Nanocrystals (ISBN 963 7371 20 6, ISBN 963 7371

18 4) B. PODOR, ZS. J. HORVATH, P. BASA, MAGYAR TUDOMANYOS AKADEMIA, Vol. 2, Pags.

411, T. Torchynska

2004 ; RAMAN SCATTERING CHARACTERIZATION OF MACRO AND NANOPOROUS SILICON

(ISBN 84-608-0071-7), Porous semiconductors, Science and Technology,(ISBN 84-608-0071-7) L.

CANHAM, A. NASSIOPOULOU, VITALI PARKHUTIK, TEOBALDO JORDA Y CIA, Vol. 1, Pags. 436,

N. Korsunska, B. Bulakh, B. Jumaev, L. Khomenkova, T. Torchynska, V. Yukhimchyk,

2004 ; MAGNETIC FIELD EFFECT ON THE VISIBLE PHOTOLUMINESCENCE OF POROUS SILICON

(ISBN 84-608-0071-7), Porous semiconductors, Science and Technology (ISBN 84-608-0071-7) L. T.

CANHAM, A. NASSIOPOULOU, V. PARKHUTIK, TEOBALDO JORDA Y CIA, Vol. 1, Pags. 154,

T.V.Torchynska, L. Khomenkova, V. Zakharchenko, J. Gonsalez, Y. Vorobiev,

2004 ; SI WIRE LIGHT EMISSION CHANGES DURING SI/SIOX INTERFACE FORMATION, (ISBN 1-

55899-758-X), Amorphous and Nanocristalline silicon science and technology, 2004 MRS Symposium

Proceeding (ISBN 1-55899-758-X) G. GANGULY, M. KONDO, E. A. SCHIFF, R. CARIUS, RAMA

BISWAS, MRS PRESS, Vol. 808, Pags. 5, F. G. Becerril Espinoza, T. Torchynska, M. Moralez Rodriquez, L.

Khomenkova, L. V. Scherbina,

2004 ; RADIATIVE CHANNEL COMPETITION IN SI NANOSTRUCTURES (ISBN 84-608-0071-7), Porous

semiconductors, Science and Technology,(ISBN 84-608-0071-7) L. CANHAM, A. NASSIOPOULOU, V.

PARHUTIK,, TEOBALDO JORDA Y CIA, Vol. 1, Pags. 434, L. Khomenkova, N. Korsunska, M.

Sheinkman, T. Stara, T. Torchynska, F. Becerril Espinoza

2004 ; SHELL MODEL OF SEMICONDUCTOR QUANTUM DOTS, Proceeding of SPIE Conference, San-Jose,

CA, USA, January 2004. (ISBN 9780819436016) MAREK OSINSKI, HIROSHI AMANO, FRITZ

HENNEBERGER,, SPIE PRESS BELLINGHAM (WA), Vol. 5349, Pags. 46, P.G.Eliseev, D.P. Popescu,

T.V.Torchynska, K.J.Malloy, A.Stintz,

2004 ; PHOTOCURRENT SPECTRAL RESPONSE OF POROUS SILICON DIODES (ISBN 84-608-0071-7),

Porous Semiconductors, Science and Technology, (ISBN 84-608-0071-7) L. T. CANHAM, A.

NASSIOPOILOU, V. PARKHUTIK,, TEOBALDO JORDA Y CIA, Vol. 1, Pags. 314, T. Torchynska, A.

Vivas Hernandez, M. Morales Rodrigues, S. Jimenez Sandoval, R. Pena Sierra, M Estrada Cuerto, G.R.

Paredes Rubio.

1998 ; SEVERAL WAYS OF EXCITATION AND DEGRADATION PROCESSES OF POROUS SILICON

PHOTOLUMINESCENCE, HETEROSTRUCTURE EPITAXY AND DEVICES, ISBN 0-7923-5012-X

(HB), ISBN 0-7923-5012-X (HB) ED. P.KORDOS, J.NOVAK, NATO SCIENCE SERIA, KLUWER

ACADEMIC PUBLISHER, Vol. 1, Pags. 15, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA,L.YU.

KHOMENKOVA,

ISBN 0-7923-5012-X (HB),

ISBN 0-7923-5012-X (HB)

1997 ; MECHANISMS OF III-V LIGHT EMITTING DIODE BULK DEGRADATION, PHYSICS OF

SEMICONDUCTOR DEVICES, ISBN 81-7319-200-6 ED. V.KUMAR AND S.K.AGARWAL,, NAROSA

PUBLISHING HOUSE, Vol. 1, Pags. 20, T.V.TORCHINSKAYA

1995 ; RECOMBINATION ENHANCED DEFECT REACTIONS AND ROLE OF RED EMITTING LIGHT

IN GAP LEDS DEGRADATION, FABRICATION AND CHARACTERIZATION OF ADVANCED

MATERIALS, ISBN 91-71393006 ED. S.W.KIM AND S.J.PARK,, MRS SOUTH KOREA, Vol. 1, Pags.

15, T.V.TORCHINSKAYA,

1995 ; GERMANIUM RELATED DEEP CENTERS IN ALGAAS EPITAXIAL LAYERS, FABRICATION

AND CHARACTERIZATION OF ADVANCED MATERIALS, ISBN 91-71393006 ED. S.W.KIM AND

S.J.PARK,", MRS SOUTH KOREA, Vol. 1, Pags. 18, T.V.TORCHINSKAYA,

1995 ; DEPENDENCE OF POROUS SILICON PHOTOLUMINESCENCE FROM THE SUBSTANCE

ONSILICON WIRE SURFACE, THIN FILMS IN ELECTRONICS, ISBN 97-5316-413-1 KHERSON

UNIVERSITY, NAUKOV DUMKA, Vol. 1, Pags. 15, T. V.TORCHINSKAYA,

N.E.KORSUNSKAYA,B.DZUMAEV,

1994 ; CHARACTERIZATION OF DEEP LEVEL DEFECTS IN MOCVDINXGA1XAS LAYER, SEMI

INSULATING III V MATERIALS, ISBN 02-1364-923-0 ED. M.GODLEVSKII,, WORLD SCIENTIFIC,

Vol. 1, Pags. 16, T.V.TORCHINSKAYA, V.I.KOOSHNIRENKO T, L.V.SHCHERBINA, C.J.MINER

1991 ; DEEP CENTERS IN ALGAAS HETEROEPITAXIAL DIODES,, POLYCRYSTALLINE

SEMICONDUCTORS II , ISBN: 35-4053-613-2 ED. J.H.WERNER, H.P.STRUNK, SPRINGER-VERLAG,

Vol. 2, Pags. 16, T.V.TORCHINSKAYA,

ISBN: 35-4053-613-2

1979 ; DEEP CENTERS IN II-VI WIDE GAP SEMICONDUCTORS, PROBLEMS OF PHYSICS AND

TECHNOLOGY OF THE WIDE GAP SEMICONDUCTORS, M. MILVIDSKIY,, " NAUKA", MOSCOW,

RUSIA, Vol. 3, Pags. 14, T.V.TORCHINSKAYA, M. Sheinkman

;REPORTES TECNICOS

13/10/2014 ; FINAL PARA PROYECTO CONACYT 000130387, CONACYT, , Tetyana V. Torchynska, Pags. 25

13/08/2014 ; REPORTE FINAL PARA PROYECTO CONACYT N 000207604, CONACYT, , T.V.Torchynska, Pags.

10

09/02/2011 ; INVESTIGACION DE LAS PROPIEDADES OPTICAS EN ESTRUCTURAS CON

NANOCRISTALES Y PUNTOS CUANTICOS DE SEMICONDUCTORES DEL GRUPO IV Y III-V

PARA DISPOSITIVOS DE NUEVA GENERACION, CONACYT, , T.V. Torchynska, Pags. 40

22/11/2010 ; ¿MODIFICACIÓN DE LOS PROPIEDADES ÓPTICAS DE PUNTOS CUÁNTICOS DE CDSE/ZNS

EN PROCESOS DE BIOCONJUGACION CON ANTICUERPOS¿, CONACYT, , , Pags. 27

12/09/2006 ; SPECTOSCOPIC CHARACTERIZATION OF NANOPOROUS SIC, CONACYT, , T.V.Torchynska, G.

Polupan,, Pags. 30

08/08/2006 ; ¿Spectoscopic characterization of nanoporous SiC¿, CONACYT MEXICO, , T.V.Torchynska, Pags. 27

15/09/2005 ; CARACTERIZACION ESPACIAL RESUELTA DE CAPAS NANOPOROSAS DE SIC, CONACYT, ,

T,Torchynska, Pags. 25

16/12/2004 ; INVESTIGACION DE FOTOLUMINESCENCIA Y EXCITACION DE FL EN ESTRUCTURAS DE

BAJA DIMENCIONALIDAD A BASE DE SI, CONACYT, , T.Torchynska, Pags. 31

13/12/2004 ; CREACION Y INVESTIGACION DE ESTRUCTURAS SEMICONDUCTORES DE BAJO

DIMENCIONSLIDAD, CONACYT, , T. Torchynska, Pags. 41

12/12/2003 ; CREACION E INVESTIGACION DE NANESTRUCTURAS DE SI, CONACYT, , T. Torchynska, Pags.

21

11/12/2003 ; Creation and investigation of light emitting low dimensional structures based on semiconductor

materials¿., CONACYT MEXICO, , T.V.Torchynska, Pags. 20

10/12/2003 ; THEORETICAL AND EXPERIMENTAL INVESTIGATION OF OPTOELECTRONIC

PROPERTIES OF INAS-GAAS QUANTUM DOT STRUCTURES¿, CONACYT, , T. V. Torchynska,

Pags. 22

15/12/2002 ; DESARROLLO DE TECNOLOGIA E INVESTIGACION DE LAS PROPIEDADES OPTICAS DE

SOLUCION SOLIDA PARA APLICACIONES ELECTRONICAS, CONACYT, , T. Torchynska, Pags.

27

01/09/1999 ; Investigation of silicon nanocrystals photoluminescence and it¿s applications¿, 1999,, ACADEMIA

NACIONAL DE CIENCIAS DE UCRANIA, , T.V.Torchynska, L.Khomenkova, N.Korsunska,, Pags. 75

01/09/1998 ; 258. ¿ Porous silicon research by Auger, SIMS, FTIR and X-ray emission methods¿, ACADEMIA

NACIONAL DE CIENCIAS DE UCRANIA, , T.V.Torchynska, L.Khomenkova, N.Korsunska, Pags. 45

01/09/1998 ; Theoretical Modeling, Development Technology and Creation of high energy cascade III-V solar cell

based on multilayer heterostructures GaAs and it¿s solid solution, ACADEMIA NACIONAL DE

CIENCIAS DE UCRANIA, , T. V. Torchynska, B. Lev, Pags. 53

01/09/1997 ; Analyses of Current status and Studding of problems of semiconductor solar cells creation for space

helioenergetics ¿,, ACADEMIA NACIONAL DE CIENCIAS DE UCRANIA, , T. V. Torchynska, Pags. 30

01/09/1995 ; 264. ¿Investigation of elementary processes of thermal and stimulated diffusion of atoms and defects

transformation and their reactions in semiconductors¿, INTERNATIONAL SCIENCE FOUNDATION

(USA, WASHINGTON), , T.V.Torchynska, M.K.Sheinkman, Pags. 43

01/09/1993 ; Ukrainian - Canadian Industrial Co-operation, Laser Development, CANADIAN MINISTRY OF

INTERNATIONAL AFFAIR, , T. V. Torchynska, Pags. 37

11/12/1992 ; National State Space Program Analyses, NATIONAL SPACE AGENCY OF UKRAINE, , T.V.Torchynska,

E.S.Shcherbuna, Pags. 43

15/12/1989 ; Investigation of physical factors, limited the stability of GaP:N and AlGaAs LED¿s and development of

the recommendation for decreasing the size of the light-emitting crystals and increasing the life time¿,

RUSSIAN ACADEMY OF SCIENCES, , T.V.Torchynska, Pags. 50

15/12/1985 ; Investigation of electrophysical characteristics of laser heterostructures during degradation¿,, RUSSIAN

ACADEMY OF SCIENCIES, , T. V. Torchynska, Pags. 55

12/12/1983 ; RESEARCH OF NONEQUILIBRIUM AND OPTILCAL PROCESSES IN WIDE-BAND-GAP

SEMICONDUCTORS AND SEMICONDUCTOR DEVICES, AS WELL AS THEIR INDUSTRIAL

APPLICATION, ACADEMY DE CIENCIAS DE RUSIA, , T.V.Torchynska, Pags. 32

;RESEÑAS

2009 ; REFEREE NOTES TO MATERIAL SCIENCE AND ENGINEERING B J., Synthesis of mesoporous

YF3 nanoflowers via solvent extraction route, Letter to Editor, Critica , Pag. 1-2, , T.Torchynska

2008 ; REFEREE NOTES TO ¿¿NNANOSCALE RESEARCH LETTERS¿¿ JOURNAL, Electronic State and

Light Absorption in a Cylindrical Quantum dot having thin falciform cross section, Letter to Editor J.

Nnanoscale Research Letters, Critica , Pag. 1-2, , T. Torchynska-critica de Manuscript NRL-313-Electronic

State and Light Absorption in a Cylindrical Quantum dot having thin falciform cross section

2008 ; REFEREE NOTES TO ¿¿SUPERLATTICE AND MICROSTRUCTURE¿JOURNAL, Dynamic of non

radiative recombination at InGaN-GaN LED defect system, Letter to Editor, Critica , Pag. 1-2, , T.

Torchynska - critica de Manuscript SM08-166-Dynamic of non radiative recombination at InGaN-GaN LED

defect system

2008 ; REFEREE NOTES TO ¿¿SOLAR ENERGY¿JOURNAL, Influence of dysprosium doping on the electrical

and optical properties of CdO thin films, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska-critica de

Manuscript SE-D-08-00176 y 00176R1-Influence of dysprosium doping on the electrical and optical properties

of CdO thin films

2008 ; REFEREE NOTES TO ¿¿SUPERLATTICE AND MICROSTRUCTURES¿JOURNAL, Scanning

Photoluminescence spectroscopy of Bioconjugated quantum dots, Letter to Editor, Critica , Pag. 1-2, , T.

Torchynska- critica de Manuscript SM08-192-Scanning Photoluminescence spectroscopy of Bioconjugated

quantum dots

2008 ; REFEREE NOTES TO ¿¿SUPERLATTICE AND MICROSTRUCTURES¿¿JOURNAL, Pulsed photo

conductivity and carrier recombination lifetime spectroscopy of metal doped germanium, Letter to Editor,

Critica , Pag. 1-2, , T. Torchynska- critica de Manuscript SM08-167-Scanning Photoluminescence

spectroscopy of Bioconjugated quantum dots

2008 ; REFEREE NOTES TO ¿¿SOLAR ENERGY¿¿ JOURNAL, Investigation on Electron Beam Evaporated

CuIn0.85Ga0.15Se2 thin film solar cells, Letter to Editor, Critica , Pag. 1-1, , T. Torchynska - critics de

Manuscripts SE-D-08-00150, 00150R1, 00150R2 y 00150R3 Investigation on Electron Beam Evaporated

CuIn0.85Ga0.15Se2 thin film solar cells

2007 ; Referee notes to J. Nanoscience and Nanotechnology, Formation of Ge nanocrystals in SiO2 by electron

beam evaporation, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska

2007 ; EVALUACION PROYECTO INTERNACIONAL BILATERAL CONACYT MEXICO HUNGARIA,

Research and development of fuzzy Systems with generalizad operations, Carta a Direccion de Politica y

Cooperacion Internacional, Critica , Pag. 1-3, , T. Torchynska

2007 ; REFEREE NOTES TO J. ALLOYS AND COMPOUNDS, Structure and optical characterization of GaP

SiO2 co-sputtered films, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska

2007 ; REFEREE NOTES TO J. MATERIAL SCIENCE: MATERIALS IN ELECTRONICS, Characterization

of deep centers in semi insulating SiC and HgI2. Application of discharge current transient spectroscopy,

Letter to Editor, Critica , Pag. 1-2, , T. Torchynska

2007 ; Referee notes to Program Committee the Conference ICANS22, Orange Electroluminescence from

Chemically Synthesized Zinc Sulfide nanocrystals doped with Mg, Letter to Editor, Critica , Pag. 1-2, , T.

Torchynska

2007 ; Referee notes to Modern Phys. Letters, Photoluminescence composition and microstructure of porous

silicon prepared by different substrate, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska

2007 ; Referee notes to ¿¿phys. stat. solid.¿¿, Spatially resolved Raman piezo spectroscopic stress analysis in

CaMoO4 thin film grown on Si substrate, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska- critica de

Manuscript pssa. 200723557-Spatially resolved Raman piezo spectroscopic stress analysis in CaMoO4 thin

film grown on Si substrate

2006 ; Referee notes to Nano Letters Journal, Tunable light emission from quantum confinement excitons in TiSi2

catalyzed silicon nanowires, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska

2006 ; Referee notes to Nanotechnology NANO, Fabrixation and Characterization of high Q micro disk laser using

InAs quantum dot active regions, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska

2006 ; Referee notes to Solid State Electronics, The influence of microstructure on optical properties of porous

silicon, Letter to Editor, Critica , Pag. 1-2, , T. Torchynska

2006 ; Referee notes to CONACYT DAC, Ptoyecto investigacion 46597, Letter to CONACYT, Critica , Pag. 1-4, ,

T.V.Torchynska

2006 ; Referee notes to Semiconductor Science and Technology, The influence of thermal annealing to the

characteristics of AlGaInP/GaInP multiple quantum wells LED wafers, Letter to Editor, Critica , Pag. 1-3, ,

T.V.Torchynska

2006 ; Referee notes to Journal "Semiconductor Science and Technology", A multiple quantum well integrated

with a selectively grown quaternary layer, Letter to Editor, Critica , Pag. 1-3, , T.V. Torchynska

2006 ; Referee notes to journal Nanotechnology, Selective growth of InGaAs/GaAs quantum dot chains on pre-

patterned GaAs (100), Letter to Editor, Critica , Pag. 1-3, , T.V.Torchynska

2006 ; Referee notes to journal Nanotechnology, : Improvement of the photostability of thiol-capped CdTe

quantum dots in aqueous solutions and in living cells by surface treatment, Letter to Editor, Critica , Pag. 1-3,

, T.V.Torchynska

2006 ; Referee notes to journal Nanotechnology, Fabrication and characterization of high Q micro disk laser using

InAs quantum dot active regions, Letter to Editor, Critica , Pag. 1-3, , T.V.Torchynska

2006 ; Referee notes to journal Non-Crystal Solids, Microscopic Modeling of the Optical Properties of

Semiconductor Nanostructures, Letter to Editor, Critica , Pag. 1-3, , T.V.Torchynska

2005 ; Referee notes to Int. Journal Superlattice and Microstructures, Photonic crystals based on QD structures,

LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-3, , T.V.Torchynska

2005 ; Referee notes to phys. stat. solid., Stress dependence of Raman vibrational bands of PbWO4 single crystals,

Letter to Editor, Critica , Pag. 1-2, , T. Torchynska

2005 ; Referee notes to J. Non Crystalline Solids, Microscopic Modeling of the Optical properties of

Semiconductor Nanostructures, Letter to Editor, Critica , Pag. 1-2, , T, Torchynska

2005 ; Referee notes in "Semiconductor Science and technology", InGaN: An overview of the growth kinetics,

physical properties, Letter to Editor, Critica , Pag. 1-3, , T.V.Torchynska

2005 ; Referee notes to Inter. jour. Superlettice and Microstructures, Calculating the Sublevels of Multi-Quantum

Wells by the Theory of Electron Interference, Letter to Editor, Critica , Pag. 1-3, , T.V.Torchynska

2005 ; Referee notes to "Fondos Puebla", Investigation project, Letter to "Fondos Puebla", Critica , Pag. 1-3, ,

T.V.Torchynska

2004 ; Referee notes to Material Research Bulletin, Physical and electronic properties of ZnO AL/porous Silicon,

Letter to Editor, Critica , Pag. 1-3, , T.V.Torchynska

2004 ; Referee notes to J. Non Cryst. Solids, Novel amorphous SiOx quantum dots using polyacrilomid gel, Letter

to Editor, Critica , Pag. 1-2, , T. V. Torchynska

2004 ; REFEREE NOTE FOR REVISTA SUPERFICIES Y VACIO (MEXICO), CRITICAL THICKNESS OF

GEGAAS (001) EPITAXIAL FILMS, LETTER TO EDITOR IN CHIEF, Critica , Pag. 0-0, ,

T.V.Torchynska

2004 ; Referee notes to Material Science and Engineering B, Excitation transfer from porous silicon to polymer,


2003 ; REFEREE NOTE FORFOR INTERNATIONAL JOURNAL THIN SOLID FILMS (USA), AGING

EFFECT ON THE ANOMALOUS TEMPERATURE DEPENDENCE OF RED PHOTOLUMINESCENCE

FROM POROUS SILICON, LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-3, , T.V.Torchynska

2003 ; Referee Note to Phys. Rev. B, Raman vibrtion modes in SiC thin films, Letter to Editor, Critica , Pag. 1-3, ,

T.V.Torchynska

2003 ; REFEREE NOTE FOR FOR INTERNATIONAL JOURNAL THIN SOLID FILMS (USA),

CHARACTERIZATION OF CIRCULAR POLARIZATION SWITCH OBSERVED IN

PHOTOCHEMICALLY ETCHED SILICON, LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-3, ,

T.V.Torchynska

2003 ; REFEREE NOTE to INTERNATIONAL JOURNAL THIN SOLID FILMS (USA),

PHOTOLUMINESCENCE AND MICROSTRUCTURE OF SI AND C CODOPED SIO2 FILMS

PREPARED BY DUAL ION BEAM SPUTTERING, LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-3, ,

T.V.Torchynska

2003 ; REFEREE NOTE to INTERNATIONAL JOURNAL NANOTECHNOLOGY (ENGLAND),

ELECTRONIC STATES IN RECTANGULAR QUANTUM WELL WIRES BASED ON A MODIFIED

PROFILE OF THE HETEROJUNCTION, LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-3, ,

T.V.Torchynska

2002 ; REFEREE NOTE FOR INTERNATIONAL JOURNAL THIN SOLID FILMS (USA), BEHAVIOR OF

PLASMA HYDROGENATED NTYPE SILICON FLUORIDE MEDIA. COMPARASION WITH NON

HYDROGENATED SILICON, ETTER TO EDITOR IN CHIEF, Critica , Pag. 1-3, , T.V.Torchynska

2002 ; REFEREE NOTE FORFOR INTERNATIONAL JOURNAL Appl. Phys. Lett. (USA), STUDIES ON

THE TIME EVOLUTION OF PHOTOCURRENT AND PRESISTENT PHOTOCURRENT IN POROUS

SILICON EVIDENCE SUPPORTING PRESENCE OF A SIH, LETTER TO EDITOR IN CHIEF, Critica ,

Pag. 1-3, , T.V.Torchynska

2002 ; REFEREE NOTE FOR INTERNATIONAL JOURNAL APPLIED PHYSICS(USA), IN SITU

PHTOLUMINESCENCE STUDIES FROM SILICON SURFACE DURING PHOTOCHEMICAL ETCHING

PROCESS, LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-2, , T.V.Torchynska

2002 ; Referee notes to Int. Journ. "physica status solidi", Stree dependence of Raman vibration bands of PbWO4,


2000 ; REFEREE NOTE FOR INTERNATIONAL JOURNAL THIN SOLID FILMS (USA), THE EFFECT OF

ANNEALING TIME ON THE PHOTOLUMINESCENCE OF VACUUM ANNEALED POROUS SILICON,

LETTER TO EDITOR IN CHIEF, Critica , Pag. 1-2, , T.V.Torchynska

PARTICIPACION EN

CONGRESOS

2015 ; , Luminescence transformation in mixture of ZnO and Carbon nanoparticles at mechanical processing,,

Extranjero, , II-VI-2015 : 17th International Conference on II-VI Compounds and Related Materials, 13-

18 September 2015, T. TORCHYNSKA, B. PEREZ MILLAN, M. KAKAZEY AND , Francia ,

2015 ; , Size dependent emission and exciton-light coupling in ZnO nanoscrystals, Extranjero, International

Conference on Polymers and Advanced Materials, POLYMAT Huatulco, Oaxaca, G. POLUPAN, T. V.

TORCHYNSKA, B. EL FILALI AND , México ,

2015 ; Annealing impact on Quantum well structure and Emission of InAs quantum dot with AlGaInAs

capping layer,, Nacional, XXIV International Material Research Congress, Can Cun , Mexico, T.V.

TORCHYNSKA, R. CISNEROS TAMAYO, I.J. GUERR , México ,

2015 ; BLUE EMISSION STIMULATION IN MIXTURE OF ZNO AND CARBON NANOCRYSTALS AT

MECHANICAL PROCESSING,, Extranjero, 227th ECS Meeting, Chicago, USA, May 24-28, 2015,

TETYANA V. TORCHYNSKA, BRENDA PEREZ MILLAN, , Estados Unidos ,

2015 ; COMPARATIVE STUDY DEFECT RELATED PHOTOLUMINESCENCE IN ZNO AND ZNO CU

NANOCRYSTALS OBTAINED BY SPRAY PYROLYSIS AND ANODIZATION METHODS,,

Extranjero, XXIV International Material Research Congress, Can Cun , Mexico,, B. EL FILALI, T.V.

TORCHYNSKA, A.I. DIAZ CANO , México ,

2015 ; Defect Related Emission of ZnO and ZnO Cu Nanocrystals Prepared by Electrochemical method,,

Extranjero, II-VI-2015 : 17th International Conference on II-VI Compounds and Related Materials, 13-

18 September 2015 Paris (France)., T. V. TORCHYNSKA, B. EL FILALI, A. MOSQUEDA AND ,

Francia ,

2015 ; DEFECT RELATED PHOTOLUMINESCENCE IN ZNO AND ZNO CU NANOCRYSTALS,

Extranjero, XXIV International Material Research Congress, Can Cun , Mexico,, T.V. TORCHYNSKA,

B. EL FILALI AND J.L. CASAS E , México ,

2015 ; Emission and structure transformation in mixture of ZnO and Carbon nanoparticles at mechanical

processing,, Extranjero, XXIV International Material Research Congress, Can Cun , Mexico,, E.

VELAZQUEZ LOZADA, T. TORCHYNSKA, B. PEREZ M , México ,

2015 ; Emission of Si quantum dots in silicon nitride films, Extranjero, , International Conference on Polymers

and Advanced Materials, POLYMAT Huatulco, Oaxaca, 18- 22 October 2015., T.V. TORCHYNSKA, A.

BENTOSA GUTIÉRREZ, J.L. CAS , México ,

2015 ; EMISSION VARIATION OF CdSeTe / ZnS QUANTUM DOTS BIOCONJUGATED TO PAPILLOMA

VIRUS ANTIBODIES,, Nacional, XXIV International Material Research Congress, Can Cun , Mexico,

J.A. JARAMILLO GÓMEZ, T.V. TORCHYNSKA, J.L. CASAS , México ,

2015 ; Light Emitting Properties Dependent on Nitride Stoichiometry of Si-rich-SiNX Films Grown by

PECVD, Extranjero, , II-VI-2015 : 17th International Conference on II-VI Compounds and Related

Materials, 13-18 September 2015 Paris (France)., T.V. TORCHYNSKA, J.L. CASAS ESPINOLA, J. A.

BEN , Francia ,

2015 ; LIGHT EMITTING PROPERTIES OF SI RICH SI3N4 FILMS GROWN BY PECVD METHOD,,

Extranjero, 227th ECS Meeting, Chicago, USA, May 24-28, 2015, T V. TORCHYNSKA, J.L. CASAS

ESPINOLA, G. POLUPAN , Estados Unidos ,

2015 ; PHOTOLUMINESCENCE AND STRUCTURAL PROPERTIES OF Si-RICH SILICON NITRIDE

FILMS GROWN BY PLASMA ENHACED CHEMICAL VAPOR DEPOSITION, Extranjero, XXIV

International Material Research Congress, Can Cun , Mexico, 13. J. A. BENTOSA GUTIÉRREZ, J. L.

CASAS ESPINO , México ,

2015 ; Physical reasons of emission transformation in CdSe/ZnS and CdSeTe/ZnS quantum dots at

bioconjugation, Extranjero, International Conference on Polymers and Advanced Materials, POLYMAT,

Huatulco, Oaxaca, 1. T. V. TORCHYNSKA , México ,

2015 ; STRAIN MODELING IN GaAs /In0.15Ga0.75As/GaAs QUANTUM WELLS WITH InAs QUANTUM

DOT STRUCTURES PREPARED AT DIFFERENT QD¿S GROWTH TEMPERATURES,, Extranjero,

XXIV International Material Research Congress, Can Cun , Mexico,, L.G. VEGA MACOTELA1, T. V.

TORCHYNSKA , México ,

2015 ; STRUCTURAL AND PHOTOLUMINESCENCE PROPERTIES OF ZnO:Er FILMS ON POROUS

SILICON CARBIDE,, Extranjero, XXIV International Material Research Congress, Can Cun , Mexico,

I. CH. BALLARDO RODRÍGUEZ, A. I. DIAZ CANO, T.V , México ,

2015 ; WEAK QUANTUM CONFINEMENT AND POLARITONS IN ZNO AND ZNO CU

NANOCRYSTALS, Extranjero, 227th ECS Meeting, Chicago, USA, May 24-28, 2015, TETYANA V.

TORCHYNSKA, BRAHIM EL FILALI, AARON , Estados Unidos ,

2014 ; EMISSION OF INAS QUANTUM DOTS EMBEDDED IN ALGAAS/INGAAS QUANTUM WELLS

WITH STRAIN REDUCING LAYER, Extranjero, ICOOPMA 2014,Sunday 27 July - Friday 1 August

2014, J.L. CASAS ESPINOLA, T.V. TORCHYNSKA, G. POLUPAN , Suiza ,

2014 ; ENHANCE OF PHOTOLUMINESCENCE AND RAMAN EFFECTS DUE TO CU NANOPARTICLES

EMBEDDED IN ZNO NANOCRYSTALS,, Extranjero, XXIII International Material Research

Congress, Can Cun , Mexico, Agosto 17-21, 2014., A.I. DIAZ CANO, B. EL FILALI, T.V. TORCHYNSKA

, México ,

2014 ; PHOTOLUMINESCENCE SPECTRUM TRANSFORMATION IN SI RICH SILICON NITRIDE

VERSUS SILICON NITRIDE STOICHIOMETRY, Extranjero, E-MRS 2014 Spring Meeting, Congress

Center in Lille (France) from May 26 to 30, 2014, .V. TORCHYNSKA, J.L. CASAS ESPINOLA, E.

VERGARA HE , Francia ,

2014 ; PHOTOLUMINESCENCE TREND IN MIXTURE OF ZNO AND CARBON NANOPARTICLES

DURING MECHANICAL ACTIVATION, Extranjero, XXIII International Material Research Congress,

Can Cun , Mexico, Agosto 17-21, 2014., E. VELÁZQUEZ LOZADA, T. TORCHYNSKA, B.

PEREMILLAN, , México ,

2014 ; PHYSICAL REASONS OF EMISSION VARIATION OF CDSETE/ZNS QUANTUM DOTS AT THE

BIOCONJUGATION,, Extranjero, E-MRS 2014 Spring Meeting, Congress Center in Lille (France) from

May 26 to 30, 2014., T. V. TORCHYNSKA, G. POLUPAN , Francia ,

2014 ; SIZE DEPENDENT EMISSION OF ZNO NANOSHEETS, Extranjero, E-MRS 2014 Spring Meeting,

Congress Center in Lille (France) from May 26 to 30, 2014., T. V. TORCHYNSKA1 AND B. EL FILALI ,

Francia ,

2014 ; STRAIN MODELING IN INXGA1-XAS/GAAS QUANTUM WELLS WITH INAS QUANTUM DOTS

AT THE VARIATION OF INXGA1-XAS COMPOSITION,, Extranjero, Congreso ICCMSE 2014,

Athens, Greece, 04-07 Abril, 2014., T. TORCHYNSKA, L. G. VEGA MACOTELA, G. POLUPAN , Grecia

,

2014 ; STRUCTURAL AND LIGHT EMITTING PROPERTIES OF SI-RICH-SI3N4 FILMS GROWN BY

PECVD METHOD, Extranjero, XXIII International Material Research Congress, Can Cun , Mexico,

Agosto 17-21, 2014., T.V. TORCHYNSKA, J.L. CASAS ESPINOLA, E. VERGA , México ,

2014 ; STUDY OF PHOTOLUMINESCENCE SPECTRUM VARIATION IN SI RICH SI3N4 VERSUS SI3N4

STOICHIOMETRY, Extranjero, XXIII International Material Research Congress, Can Cun , Mexico,

Agosto 17-21, 2014., T.V. TORCHYNSKA, J.L. CASAS ESPÍNOLA, E. VERGA , México ,

2014 ; VARIATION AND NON HOMOGENEITY OF PHOTOLUMINESCENCE SPECTRUM IN INAS

QDS EMBEDDED IN IN0.15GA0.85AS QWS AND ITS DEPENDENCE ON THE TEMPERATURE

AND EXCITATION POWER, Extranjero, E-MRS 2014 Spring Meeting, Congress Center in Lille

(France) from May 26 to 30, 2014.p.76,, I.J. GUERRERO MORENO,T. V. TORCHYNSKA, A. VIVAS ,

Francia ,

2013 ; BLUE SHIFT OF PHOTOLUMINESCENCE OF CDSE/ZNS CORE SHELL QUANTUM DOYS

CAUSED BY BIOCONJUGTION TO ANTI INTERLEUKIN 10 ANTIBODIES,, Extranjero, 21

International Symposium, Nanostructures: Physics and Nanotechnology, Sa, T.V.TORCHYNSKA,

YU.V. VOROBIEV, P.P.HORLEY, , Federación Rusia ,

2013 ; EMISSION AND STRUCTURE VARIETIES IN ZNO:AG NANORODS OBTAINED BY

ULTRASONIC SPRAY PYROLYSIS,, Extranjero, XII Int. Conf. on Microthechnology and Thermal

problems in Electronics, MICROTERM 2013, Lodz, POLAND, June 2013., E. VELÁZQUEZ LOZADA,

T.V. TORCHYNSKA, , , J. L. CASAS ESPINOLA L. CASTAÑEDA , Polonia ,

2013 ; EPR AND EMISSION STUDY OF SILICON SUBOXIDE NANOPILLARS,, Extranjero, XXII

International Material Research Congress, IMRCXXII, Can Cun, Mexico, August,11-15, 2013, V.

BRATUS, I. INDUTNYI, P SHEPELIAVIY T. TORCHYNSKA , México ,

2013 ; HIGH RESOLUTION XRD AND STRAIN ESTIMATION IN AL0.3GA0.7AS/IN0.15GA0.85AS

QUANTUM WELLS WITH EMBEDDED INAS QUANTUM DOTS,, Extranjero, XXII International

Material Research Congress, IMRCXXII, Can Cun, Mexico, August,11-15, 2013,, R. CISNEROS

TAMAYO, T.V. TORCHYNSKA, L. SHCHERBYNA , México ,

2013 ; INFRARED CDSETE/ZNS QUANTUM DOTS CONJUGATED TO PSEUDO RABIES VIRUS

ANTIBODIES,, Extranjero, XXII International Material Research Congress, IMRCXXII, Can Cun,

Mexico, August,11-15, CH. BALLARDO RODRIGUEZ, T. TORCHYNSKA, J. DOUDA J.A. JARAMILLO

GOMEZ, , México ,

2013 ; PHOTOLUMINESCENCE VARIATION OF INAS QUANTUM DOTS EMBEDDED IN INALGAAS

QUANTUM WELLS AT THERMAL ANNEALING,, Extranjero, XII Int. Conf. on Microthechnology

and Thermal problems in Electronics, MICROTERM 2013,, T. V. TORCHYNSKA G. POLUPAN G.

POLUPAN J.L. CASAS ESPINOLA D. DIOSDADO , Polonia ,

2013 ; PHOTOLUMINESCENCE, XRD AND HR-XRD STUDIES IN INGAAS/ GAAS QUANTUM WELLS

WITH EMBEDDED INAS QUANTUM DOTS OF DIFFERENT DENSITIES,, Extranjero, XXII

International Material Research Congress, IMRCXXII, Can Cun, Mexico, August,11-15, 2013, L. G.

VEGA MACOTELA, T. TORCHYNSKA , México ,

2013 ; PHYSICAL REASONS OF EMISSION VARIATION IN CDSE/ZNS QUANTUM DOTS

CONJUGATED TO ANTIBODIES, Extranjero, XXII International Material Research Congress,

IMRCXXII, Can Cun, Mexico, August,11-15, 2013, T. TORCHYNSKA, , México ,

2012 ; COMPARATIVE STUDY OF PHOTOLUMINESCENCE VARIATION IN INAS QUANTUM DOTS

EMBEDDED IN INGAALAS QUANTUM WELLS,, Extranjero, XXI International Material Research

Congress, August 12-17, 2012, Can Cun, Mexico, MRS Proceedings /Volume 1534 /2013,, J.L. CASAS

ESPINOLA, L. D. CRUZ. DIOSDADO T.V. TORCHYNSKA, G. POLUPAN , México ,

2012 ; DOUBLE CORE INFRARED (CDSETE) / ZNS QUANTUM DOTS CONJUGATED TO IGG

ANTIBODIES,, Extranjero, XXI International Material Research Congress, August 12-17, 2012, Can

Cun, Mexico, MRS Proceedings /Volume 1534 /2013,, JOSE L. CASAS ESPINOLA, CHETZYL

BALLARDO RODRIGUEZ T.V. TORCHYNSKA , México ,

2012 ; DOUBLE CORE INFRARED CDSETE/ZNS QUANTUM DOTS CONJUGATED TO PAPILOMA

VIRUS ANTIBODIES, Extranjero, XXI International Material Research Congress, August 12-17, 2012,

Can Cun, Mexico, MRS Proceedings /Volume 1534 /2013,, T.V. TORCHYNSKA J. A. JARAMILLO

GÓMEZ, J.L. CASAS ESPINOLA J..DOUDA , México ,

2012 ; ELECTRONIC EFFECTS IN CDSE/ZNS QUANTUM DOTS CONJUGATED TO IL-10

ANTIBODIES, Extranjero, NANOTECH, Canta Clara, USA, June 18-21, 2012. Technical Proceedings of

the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 , pp. 90-93., T.V.

TORCHYNSKA J. DOUDA, A.I.DIAZ CANO J.L. CASAS ESPINOLA, , México ,

2012 ; EMISSION AND HR-XRD STUDY IN INAS QUANTUM DOT STRUCTURES PREPARED AT

DIFFERENT QD¿S GROWTH TEMPERATURES,, Extranjero, XXI International Material Research

Congress, August 12-17, 2012, Can Cun, Mexico, MRS Proceedings /Volume 1534 /2013,, LEONARDO

G. VEGA MACOTELA T. V. TORCHYNSKA , México ,

2012 ; EMISSION MODIFICATION IN ZNO NANOSHEETS AT THERMAL ANNEALING, Extranjero, XXI

International Material Research Congress, August 12-17, 2012, Can Cun, Mexico, MRS Proceedings

/Volume 1534 /2013,, AARON I. DIAZ CANO, BRAHIM EL FILALI, J. L. CASAS T.V. TORCHYNSKA ,

México ,

2012 ; PHOTOLUMINESCENCE TRANSFORMATION OF CORE/SHELL CDSE/ZNS QUANTUM DOTS

AT THE CONJUGATION TO BIOMOLECULES,, Extranjero, XXI International Material Research

Congress, August 12-17, 2012, Can Cun, Mexico,Mater. Res. Soc. Symp. Proc. Vol. 1376 © 2012,, I. CH.

BALLARDO RODRÍGUEZ YE. SHCHERBYNA T. TORCHYNSKA, , México ,


ANTIBODIES,, Extranjero, XXI International Material Research Congress, August 12-17, 2012, Can

Cun, Mexico, Mater. Res. Soc. Symp. Proc. Vol. 1376 © 2012,, T.V. TORCHYNSKA A.L.QUINTOS

VAZQUEZ, , México ,

2012 ; SI QUANTUM DOT STRUCTURES AND SOME ASPECTS OF APPLICATIONS,, Extranjero, XXI

International Material Research Congress, August 12-17, 2012, Can Cun, Mexico,MRS Proceedings

/Volume 1534 /2013,, L. SHCHERBYNA T. TORCHYNSKA, , México ,

2012 ; STARK EFFECT IN LUMINESCENCE OF CORE/SHELL CDSE(CDSETE)/ZNS QUANTUM DOTS

CONJUGATED TO ANTIBODIES, Extranjero, International Material Research Congress, IMRCXXI,

Can Cun, Mexico, August,12-17, 2012., T.V. TORCHYNSKA , México ,

2011 ; CDSE/ZNS QUANTUM DOTS WITH INTERFACE STATES AS BIOSENSORS,, Extranjero, SPIE,

2011 Optics and Photonics, 21-25 August, 2011, San-Diego, USA, Biosensing and Nanomedicine IV,,

T.V.TORCHYNSKA, , Estados Unidos ,

2011 ; EFFECT OF ASPECT RATIO UPON THE ENRGY SPECTRUM OF AN ELECTRON IN A

PYRAMID-SHAPED QUANTUM DOT,, Extranjero, IV International Conference on Surfaces,

Materials and Vacuum, Puerto Vallarta, Jalisco, Mexico, 26-30 Sept. 2011., Y. VOROBIEV, T.

TORCHYNSKA, J. GONZALEZ-HERNAN , México ,

2011 ; ELASTIC STRAIN IN SYMMETRINAS QUANTUM DOT-IN-A-WELL STRUCTURES., Extranjero,

The Seventh Internationa Conference on Low Dimensional Structures and Devices, Telchac, Nuevo

Yucatan, Mexico, 22-27 May 2011, R.L. MASCORRO ALQUICIRA, T.V. TORCHYNSKA, G. GOMEZ ,

México ,

2011 ; HOMOGENEITY AND ELASTIC STRAIN IN SYMMETRIC INGAAS/GAAS QUANTUM WELLS

WITH EMBEDDED INAS QDS, Extranjero, 16th Semiconducting and Isolating Material Conference,

SIMC XVI, June 19-23, KTH, Stockholm, Sweden,, G. POLUPAN, L.G. VEGA MACOTELA, , T.V.

TORCHYNSKA , Suecia ,

2011 ; NEW GENERATION OF OPTOELECTRONIC DEVICES BASED ON SI NANOCRYSTALS,

Nacional, IEEE sec. Mexico, Conference ROC&C-2011, Acapulco, 27 Nov.-3 Dic.,2011, T.V.

TORCHYNSKA , México ,

2011 ; PECULIARITIES OF EXCITON EMISSION IN SIC NANOCRYSTALS,, Extranjero, International

Material Research Congress, IMRCXX, Can Cun, Mexico, August 2011,, T.V. TORCHYNSKA AND M.

MORALES RODRIGUEZ, , México ,

2011 ; PHOTOLUMINESCENCE EMISSION OF INAS DWELL INGAAS/GAAS STRUCTURES,,

Extranjero, International Material Research Congress, IMRCXX, Can Cun, Mexico, August 2011,, J.L.

CASAS ESPINOLA, T.V. TORCHYNSKA, M. OJEDA , México ,

2011 ; PHOTOLUMINESCENCE TRANSFORMATION OF CORE-SHELL CDSE/ZNS QUANTUM DOTS

AT THE CONJUGATION TO BIOMOLECUES, Extranjero, , XX International Material Research

Congress, IMRCXX, Can Cun, Mexico, August 13-19, 2011,, T.V. TORCHYNSKA, I.CH. BALLARDO,

RODRIGUEZ , México ,

2011 ; PL SPECTRA MODIFICATION AT THE ANNEALING OF INAS/ ALGAAS QDS, Extranjero,

International Material Research Congress, IMRCXX, Can Cun, Mexico, August 2011,, J.L. CASAS

ESPINOLA, T.V. TORCHYNSKA, L.D. CRUZ , México ,

2011 ; RAMAN SCATTERING OF CDSE/ZNS QUANTUM DOTS BIOCONJUGATED WITH

OSTEOPONTIN ANTIBODY, Extranjero, The Seventh Internationa Conference on Low Dimensional

Structures and Devices, Telchac, Nuevo Yucatan, Mexico, 22-27 May 2011,, A.I. DIAZ CANO, I. CH.

CALLARDO RODRIGUEZ, T.V. , México ,

2011 ; RAMAN SPECTRA OF CDSE/ZNS QUANTUM DOTS BIOCONJUGATED TO OC125

ANTIBODIES, Extranjero, 16th Semiconducting and Isolating Material Conference, SIMC XVI, June

19-23, KTH, Stockholm, Sweden, A.L. QUINTOS VAZQUEZ, L.G. VEGA MACOTELA, L. SHCHE ,

Suecia ,


ANTIBODIES,, Extranjero, International Material Research Congress, IMRCXX, Can Cun, Mexico,

August 2011,, T.V. TORCHYNSKA, A.L. QUINTOS VAZQUEZ, L. SHCHE , México ,

2011 ; RAMAN SPECTRUM MODIFICATION OF CDSE/ZNS QUANTUM DOTS AT THE BIO-

CONJUGATION TO IGG ANTIBODIES,, Extranjero, XX International Material Research Congress,

IMRCXX, Can Cun, Mexico, August 13-19, 2011,, J. DOUDA, C.R. GONZALEZ VARGAS, A. DIAZ

CANO, , México ,

2011 ; SI AND GE QUANTUM DOTS AND DIFFERENT ASPECTS OF APPLICATIONS,, Extranjero,

International Material Research Congress, IMRCXX, Can Cun, Mexico, August 2011, T.V.

TORCHYNSKA, , México ,

2011 ; SI QUANTUM DOTS AND DIFFERENT ASPECTS OF APPLICATIONS, Extranjero, SPIE, 2011

Optics and Photonics, Nanophotonics materials VIII, 21-25 August, 2011, San-Diego, USA,, T.V.

TORCHYNSKA , Estados Unidos ,

2011 ; TRANSFORMATION OF PHOTOLUMINESCENCE AND RAMAN SCATTERING SPECTRA AT

THE CONJUGATION OF CDSE/ZNS QUANTUM DOTS TO ANTIBODIES, Extranjero, The Seventh

Internationa Conference on Low Dimensional Structures and Devices, Telchac, Nuevo Yucatan, Mexico,

22-27 May 2011,, J.L. CASAS ESPINOLA, T.V. TORCHYNSKA, G. POLUPAN , México ,

2011 ; TRANSFORMATION OF RAMAN SCATTERING SPECTRA AT THE CONJUGATION OF

CDSE/ZNS QUANTUM DOTS TO IL-10 ANTIBODIES,, Extranjero, XXInternational Material

Research Congress, IMRCXX, Can Cun, Mexico, August 2011,, A.I. DIAZ CANO, J. DOUDA, O.S.

LOPEZ DE LA LUZ, , México ,

2011 ; X RAY DIFFRACTION AND ELASTIC STRESS IN ASYMMETRIC INAS QUANTUM DOT

STRUCTURES,, Extranjero, The Seventh Internationa Conference on Low Dimensional Structures and

Devices, Telchac, Nuevo Yucatan, Mexico, 22-27 May 2011,, J.L. CASAS ESPINOLA, T.V.

TORCHYNSKA, G. GOMEZ , México ,

2010 ; , EMISSION EFFICIENCY OF CRYSTALLINE AND AMORPHOUS SI NANOCLUSTERS,,

Extranjero, International Semiconductor Conference,CAS 2010, Sinaia, Romania,, T.V. TORCHYNSKA ,

Rumanía ,

2010 ; DISPERSION OF PHOTOLUMINESCENCE PEAK POSITIONS EN INAS QD ASYMMETRIC

MULTI QUANTUM WELL STRUCTURES,, Extranjero, 10th International Workshop ¿Beam injection

Assessmant of Microstructures in Semiconductors, BIAM 2010,, J. L. CASAS ESPÍNOLA, T. V.

TORCHYNSKA, G. POLUPAN , Estados Unidos ,

2010 ; ELASTIC STRESS AND EMISSION NONHOMOGENEITY IN INAS QUANTUM DOT DWELL

STRUCTURES, Extranjero, 10th International Workshop ¿Beam injection Assessmant of

Microstructures in Semiconductors, BIAM 2010, Halle,Germany, J.L. CASAS ESPINOLA,T V

TORCHYNSKA,J PALACIOS GOME , Austria ,

2010 ; ELASTIC STRESS AND EMISSION NONHOMOGENEITY IN SYMMETRIC INAS QUANTUM

DOT-IN-A-WELL STRUCTURES, Extranjero, XVIII Material Research Congress, Can Cun , Mexico,

August 15-20,2010., T.V. TORCHYNSKA, G GÓMEZ GASGA, E. VELAZQUEZ , México ,

2010 ; ENERGY SPECTRA OF A PARTICLE CONFINED IN A PYRAMID WELL,, Extranjero, X

International Conference on Nanostructures materials, Roma, Italy, September 13-17, 2010,,

YU.VOROVEV, V.R VIEIRA,.RIBEIRO,PM.T.V.TORCHYNSKA YU.VOROVEV, V.R

VIEIRA,.RIBEIRO,T.V.TORCHYNSKA YU.VOROVEV, V.R VIEIRA,.RIBEIRO,T.V.TORCHYNSKA ,

Italia ,

2010 ; EXCITON EMISSION STIMULATION AND EXCITON POLARITON COUPLING IN SIC

NANOCRYSTALS., Extranjero, XVIII Material Research Congress, Can Cun , Mexico, August 15-

20,2010., T. V. TORCHYNSKA, A.I. DIAZ CANO , México ,

2010 ; MODIFICATION OF OPTICAL PROPERTIES AT BIOCONJUGATION OF CORE-SHELL

CDSE/ZNS QUANTUM DOTS,, Extranjero, Quantum dots 2010, Nottingen, England, April26-30,2010.,

T V TORCHYNSKA, A L QUINTOS VAZQUEZ, R PEÑA SIERR , Reino Unido ,

2010 ; POTENTIAL BARRIER STUDY AT INGAAS/INAS QUANTUM DOT INTERFACE IN

ASYMMETRIC MULTI QUANTUM WELL STRUCTURES., Extranjero, XVIII Material Research

Congress, Can Cun , Mexico, August 15-20,2010, J. L.CASAS ESPÍNOLA, T.V.TORCHYNSKA AND G.

POLUPAN , México ,

2010 ; RADIATIVE INTERFACE STATE MODIFICATION IN CDSE/ZNS QUANTUM DOTS COVERED

BY POLYMER, Extranjero, XVIII Material Research Congress, Can Cun , Mexico, August 15-20,2010,

T.V. TORCHYNSKA, J. DOUDA, LEO MACOTELA, R. PENA , México ,

2010 ; RAMAN SPECTRA OF BIOCONJUGATED CDSE/ZNS QUANTUM DOTS,, Extranjero, XVIII

Material Research Congress, Can Cun , Mexico, August 15-20,2010., T. V. TORCHYNSKA,

A.L.QUINTOS VÁZQUEZ, R. PEÑA , México ,

2010 ; SEMICONDUCTOR QUANTUM DOTS WITH INTERACE STATE IN BIOLOGY AND MEDICINE,,

Extranjero, X International Conference on Nanostructures materials, Roma, Italy, September 13-17,

2010,, T.V.TORCHYNSKA T.V.TORCHYNSKA , Italia ,

2010 ; SOME REASONS OF EMISSION VARIATION IN INAS QUANTUM DOT-IN-A-WELL

STRUCTURES, Extranjero, Quantum dots, 2010, Nottingen, England, April 26-30, 2010, T V

TORCHYNSKA, J PALACIOS GOMEZ, G GÓMEZ GASGA, A , Reino Unido ,

2010 ; T V. TORCHYNSKA, Y. V. VOROBIEV AND L. V. SHCHERBYNA, EMISSION RELATED

EMISSION RELATED TO EXCITON-POLARITON COUPLING IN SIC NANOCRYSTALS,,

Extranjero, Porous Semiconductors. Science and Technology, Valencia, 14-19 March, 2010,, T V.

TORCHYNSKA, Y. V. VOROBIEV , L. V. SHCHERBYNA , España ,

2009 ; BIOCONJUGATION AND MODIFICATION OF RAMAN SPECTRA OF CDSE/ZNS QUANTUM

DOTS,, Extranjero, Nano and Giga challengers in Electronics, Photonics and Renewable Energy,

Hamilton, Ontario, Canada, 10-14 August, 2009., T. V TORCHYNSKA, A.I. DIAZ CANO, YU.

VOROBIEV, , Canadá ,

2009 ; EMISSION RELATED TO EXCITON-POLARITON COUPLING IN SIC NANOCRYSTALS,,

Extranjero, 23-th International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS

23, Science and Technology the Netherlands, August 23-28, 2009., T.V. TORCHYNSKA, , Países Bajos ,

2009 ; EVALUATION OF INAS QD LASER STRUCTURE PARAMETERS,, Extranjero, VII Congreso

Internacional en Innovacion y Desarrollo Technologico, 7-9 October, 2009, Cuarnavaca, Morelos,

Mexico, T.V. TORCHYNSKA, J.L.CASAS ESPINOLA, G. POLUPAN , México ,

2009 ; EXCITON POLARITON EFFECTS IN SIC NANOCRYSTALS, Extranjero, First International

Conference on Nanostructures Materials and Nanocomposites (ICNM-2009), T. TORCHYNSKA , India ,

2009 ; IN/GA INTERMIXTURE IN INAS QD ASYMMETRIC DWELL STRUCTURES,, Extranjero, Nano

and Giga challengers in Electronics, Photonics and Renewable Energy, Hamilton, Ontario, Canada, 10-

14 August, 2009., J. L. CASAS ESPÍNOLA, T. V. TORCHYNSKA AND G. POLU , Canadá ,

2009 ; NUMERICAL ANALYSIS OF THE PERFOMENCE OF P-I-N DIODES MICROWAVE SWITCHES

BASED ON DIFFERENT MATERIALS,, Extranjero, XVIII International Material Research Congress,

IMRC 2009, Symposium 4, August 16-21, Can Cun, Qroo, Mexico, L.A. ITURRI HINOJOSA, L.M.

RESENDIZ , T.TORCHYNSKA , México ,

2009 ; OPTICAL AND STRUCTURAL INVESTIGATION OF SI NANOCLUSTERS IN AMORPHOUS

HYDROGENATED SILICON,, Extranjero, ICSI-6 Conference, May 17-22, 2009, Los Angeles, USA,, T.

V. TORCHYNSKA, AND YE.S. SHCHERBYNA , Estados Unidos ,

2009 ; PHOTOLUMINESCENCE AND INAS QD LASER STRUCTURE PARAMETERS,, Extranjero, XVIII

International Material Research Congress, IMRC 2009, Symposium 13, August 16-21, Can Cun, Qroo,

Mexico., T.V. TORCHYNSKA, J.L.CASAS ESPINOLA , México ,

2009 ; PHOTOLUMINESCENCE INHOMOGENEITY STUDY IN INAS DWELL STRUCTURES., Nacional,

IEEE Conference ROC&C-2009, Acapulco, 29 Nov.-5 Dic.,2009, T. V. TORCHYNSKA, G. POLUPAN ,

México ,

2009 ; PHOTOLUMINESCENCE SPECTRA OF BIO-COMJUGATED CDSE/ZNS QUANTUM DOTS,,

Extranjero, XVIII International Material Research Congress, IMRC 2009, Symposium 1, August 16-21,

Can Cun, Qroo, Mexico., T.V. TORCHYNSKA, A. L. QUINTOS VAZQUEZ, R. PENA , México ,

2009 ; PHOTOLUMINESCENCE STUDY AND THE EVALUATION OF DWELL STRUCTURE

PARAMETERS,, Extranjero, VIII Int. Conf. on Microthechnology and Thermal problems in Electronics,

MICROTHERM 2009, June 28-July 1, 2009, Lodz, Poland, p.57-61., T. V. TORCHYNSKA, A. VIVAS

HERNANDEZ, G. POLUPAN , Polonia ,

2009 ; PHOTOLUMINESCENCE STUDY AND THE EVALUATION OF DWELL STRUCTURE

PARAMETERS,, Extranjero, VIII Int. Conf. on Microthechnology and Thermal problems in Electronics,

MICROTHERM 2009, June 28-July 1, 2009, Lodz, Poland., T. V. TORCHYNSKA , México ,

2009 ; PHOTOLUMINESCENCE STUDY AND THE EVALUATION OF INAS DWELL STRUCTURE

PARAMETERS,, Extranjero, XVIII International Material Research Congress, IMRC 2009, Symposium

4, August 16-21, Can Cun, Qroo, Mexico., T.V. TORCHYNSKA, A. VIVAS HERNANDEZ, I. J. GUER ,

México ,

2009 ; PHOTOLUMINESCENCE TEMPERATURE ANALYSIS IN SIC NANOCRYSTALS,, Extranjero, VIII

Int. Conf. on Microthechnology and Thermal problems in Electronics, MICROTHERM 2009, June 28-

July 1, 2009, Lodz, Poland, p.137-144., T. V. TORCHYNSKA, J.A. YESCAS HERNANDEZ, YE. SHCHE ,

Polonia ,

2009 ; SURFACE MODIFICATION STUDY IN STAINLESS STEEL IRRADIATED WITH 3.66 MEV NI

IONS, Extranjero, International Conference on Surfaces Materials and Vacuum 2009, San Luis Potosi,

September 21-27, 2009., U.S. PACHECO Y ALCALA, T.V. TORCHYNSKA , México ,

2009 ; SURFACE PHONONS AND EXCITON-POLARITON COUPLING IN SIC NANOCRYSTALS,,

Extranjero, ICSI-6 Conference, May 17-22, 2009, Los Angeles, USA,, T. TORCHYNSKA Y G. POLUPAN

, Estados Unidos ,

2009 ; TRANSFORMATION OF PHOTOLUMINESCENCE SPECTRA IN BIO-CONJUGATED CORE-

SHELL CDSE/ZNS QUANTUM DOTS, Extranjero, 23-th International Conference on Amorphous and

Nanocrystalline Semiconductors, ICANS 23, Science and Technology the Netherlands, August 23-28,

2009., T.V. TORCHYNSKA, R. PENA-SIERRA, S. OSTAPENKO, , Países Bajos ,

2009 ; VARIATION OF RAMAN SPECTRA OF CDSE/ZNS QUANTUM DOTS AT THE BIO-

CONJUGATOION, Extranjero, 23-th International Conference on Amorphous and Nanocrystalline

Semiconductors, ICANS 23, Science and Technology the Netherlands, August 23-28, 2009., T.V.

TORCHYNSKA, L.G. VEGA-MACOTELA, J. DOUDA, , Países Bajos ,

2008 ; ANALYSIS OF RAMAN SCATTERING IN CORE SHELL CDSE/ZNS QUANTUM DOTS

CONJUGATED TO BIO MOLECULES, Extranjero, 9th International Workshop on Beam Injectio

Assesment of Microstructure in Semiconductors, Toledo, Spain, 29June-3July 2008,, T. V.

TORCHYNSKA, S. OSTAPENKO, C. PHELAN, A. Z , España ,

2008 ; Emission of Si nanoclusters of different phases in amorphous hydrogenated silicon,, Extranjero, 9th

International Workshop on Beam Injectio Assesment of Microstructure in Semiconductors, Toledo,

Spain, 29June-3July 2008, T. V. TORCHYNSKA, , España ,

2008 ; Excton related photoluminescence stimulation in SiC nanocrysallites, Extranjero, 9th International

Workshop on Beam Injectio Assesment of Microstructure in Semiconductors, Toledo, Spain, 29June-

3July 2008, T.V.TORCHYNSKA, J. A. YESCS HERNANDE, G. POLUPAN, , España ,

2008 ; Multiexcited state study in InAs DWELL structures,, Extranjero, 9th Expert Evaluation &Control of

Compound Semiconductor Materials & Technologies, EXMATEC 2008, Lodz, Poland, June 2-6, 2008,

G. P. POLUPAN, J.L.CASAS ESPINOLA , Polonia ,

2008 ; Photoluminescence and Raman scattering in core-shell CdSe/ZnS bioconjugated quantum, Extranjero,

9th Expert Evaluation &Control of Compound Semiconductor Materials & Technologies, EXMATEC

2008, Lodz, Poland, June 2-6, 2008,, T. V. TORCHYNSKA, R. PENA SIERA , Polonia ,

2008 ; Photoluminescence and X-ray diffraction study of porous SiC, Nacional, 28th Annual Meeting

International Conference on Materials, Surfaces and Vacuum, 29 September-3 Octubre, 2008,Veracruz,

Mexico, T.V. TORCHYNSKA, J.A. YESCAS , M. MORALES RODRIGUE , México ,

2008 ; Photoluminescence mapping of InAS/InGaAs Quantum dot structures, Extranjero, 9th International


3July 2008, S. OSTAPENKO, T.V. TORCHYNSKA, E. VELAZQUEZ LOZ , España ,

2008 ; Photoluminescence of bioconjugated core Shell CdSe/ZnS quantum dots,, Extranjero, International

Conference on Nanoscience and Technology, Keystone, Colorado, USA, July 20-25, 2008,, T.V.

TORCHYSKA, R. TREVILLA MONJE, J. DOUDA, P.A. , Estados Unidos ,

2008 ; Photoluminescence of core/shell CdSe/Zns quantum dots of different sizes, Inter. Conference on Optical,

Extranjero, Optoelectronic and Photonic Materials and Applications, ICOOPMA08, Alberta, Canada,

July 20-24, 2008., T. V. TORCHYNSKA, R. TREVILLA MONJE, J. DOUDA, , Canadá ,

2008 ; Photoluminescence of Si nanoclusters in amorphous hydrogenated silicon,, Extranjero, 2008 MRS

Meeting, Symposium A, 24-27 March, 2008, San Francisco, USA, T. V. TORCHYNSKA, , Estados

Unidos ,

2008 ; Photoluminescence Variation in DWELL structures with different InAs QD density,, Extranjero,

International Conference on Nanoscience and Technology, Keystone, Colorado, USA, July 20-25, 2008,

J.L. CASAS ESPINOLA, T.V. TORCHYNSKA, E. VELAZQUEZ , Estados Unidos ,

2008 ; Porous SiC for GaN based electronics, Nacional, 19 Reunion de otono de comunicaciones, computación,

electrónica y exposición industrial, ROC&C 2008, 30 Noviembre -6 Dicembre 2008, Acapulco, Mexico.,

T.V.TORCHYNSKA, G. POLUPAN , México ,

2008 ; Raman scattering analysis of poros SiC layers, Extranjero, 9th Expert Evaluation &Control of

Compound Semiconductor Materials & Technologies, EXMATEC 2008, Lodz, Poland, June 2-6, 2008,,

T. V. TORCHYNSKA, A. DIAZ CANO, , Polonia ,

2008 ; Some aspects of exciton thermal exchange in InAs QD DWELL laser structures,, Extranjero, Joint

Conferences on Interaction Among Nanostructures, February 3-7, 2008, Orlando, Florida, USA.,

T.V.TORCHYNSKA , Estados Unidos ,

2008 ; X ray diffraction and EPR study of porous 6H-SiC,, Extranjero, International Conference on

Nanoscience and Technology, Keystone, Colorado, USA, July 20-25, 2008, T. V. TORCHYNSKA, V.

BRATUS, J. PALACIOS GOMEZ , Estados Unidos ,

2007 ; Correlation between the photoluminescence and different types of Si nanoclusters in amorphous silicon,

Extranjero, silicon22nd International Conference on Amorphous and Nanocrystalline Semiconductors,

Breckenridge, Colorado, August 19-24, 2007, T. V. TORCHYNSKA, A. L. QUINTOS VAZQUEZ, ,

Estados Unidos ,

2007 ; Localization of defects in InAs QD asymmetric InGaAs/GaAs Dwell structures,, Extranjero, 24th

International Conference on Defects in Semiconductors, Albuquerque, NM, July 22, J. L. CASAS

ESPINOLA, T. V. TORCHYNSKA, , Estados Unidos ,

2007 ; Luminescence defect study in SiC nano-crystallites,, Extranjero, 4th International Conference on Defects

in Semiconductors, Albuquerque, NM, July 22-27, 2007, p.265., A. I. DIAZ CANO, T. V. TORCHYNSKA

, Estados Unidos ,

2007 ; Optical and structural properties of SiC nanocrystalls,, Extranjero, XIV-th Semiconducting and

Insulating Materials Conference, SIMC XIV, May 15-20, 2007, Fayetteville, AR, USA., A. DIAZ CANO,

T. V. TORCHYNSKA , Estados Unidos ,

2007 ; Raman scattering study in bio-conjugated core-shell CdSe/ZnS quantum dots,, Extranjero, 22nd

International Conference on Amorphous and Nanocrystalline Semiconductors, Breckenridge, Colorado,

August 19-24, 2007, T. V. TORCHYNSKA, J. DOUDA, S. S. OSTAPENKO, S. , Estados Unidos ,

2007 ; Role of ballistic transport in photoluminescence excitation of Si nanocrystallites,, Extranjero, 6-th

International Conference on Low dimensional Structures and Devices, LDSD 2007, San Andres,

Colombia, 15-20 April 2007,, T. V. TORCHYNSKA, F. G. BECERRIL ESPINOZA, , Colombia ,

2007 ; Role of ballistic transport in photoluminescence excitation of Si nanocrystals,, Extranjero, 22nd

International Conference on Amorphous and Nanocrystalline Semiconductors, Breckenridge, Colorado,

August 19-24, 2007, p. ThO15.11, T. V. TORCHYNSKA, , Estados Unidos ,

2007 ; Size dependent photoluminescence of SiC nanocrystals,, Extranjero, 22nd International Conference on

Amorphous and Nanocrystalline Semiconductors, Breckenridge, Colorado, August 19-24, 2007, M.

MORALEZ RODRIGUEZ, A. I. DIAZ CANO, , Estados Unidos ,

2006 ; Ballistic effect and optical properties of Si nanocrystallites (invited), Extranjero, Intern. Conf. on

Superlattice, Nanostructures and Nanodevices, ICSNN 2006, 30July-4August, 2006, Istanbul,, T. V.

TORCHYNSKA , Turquía ,

2006 ; Ballistic effect and photoluminescence of Si nanocrystallites, Extranjero, XV International Material

Research Congress, 20-24 August 2006, Can Cun,, T.V. TORCHYNSKA (INVITED TALK), , México ,

2006 ; Ballistic transport and PL of big size Si nanocrystals, Extranjero, International Conference on

Nanoscience and Technology, NANO9, T. TORCHYNSKA , Suazilandia ,

2006 ; dynamics in InAs quantum dots embedded in InGaAs/GaAs quantum wel, Extranjero, Internacional

Workshop NANOMAT 2006, Natalia/Turkey, T. V. TORCHYNSKA, J. L. CASAS ESPINOLA, , Turquía

,

2006 ; Dynamics of excitons in InAs quantum dots in a well InGaAs/GaAs structures, Extranjero, XV

International Material Research Congress, 20-24 August 2006, Can Cun,, J. L. CASAS ESPINOLA, T. V.

TORCHYNSKA, , México ,

2006 ; Optical and structural evaluation of SiC Nanocrystallites, Extranjero, International Conference on

Nanoscience and Technology, NANO9, A. DIAZ CANO, T. TORCHYNSKA , Suazilandia ,

2006 ; Photoluminescence and Structural investigation of Si nanocrystals embedded in amorphous silicon,,

Extranjero, International Conference on Nanoscience and Technology, NANO9, T. TORCHYNSKA, A.

VIVAS HERNANDEZ, A. L. QUINTOS V , Suazilandia ,

2006 ; Photoluminescence energy trend for ground and excited state in INAs quantum dots in a well

InGaAs/GaAs structures, Extranjero, Intern. Conf. on Superlattice, Nanostructures and Nanodevices,

ICSNN 2006,, E. VELAZQUEZ LOZADA, T. V. TORCHYNSKA, , Turquía ,

2006 ; Photoluminescence of big size Si Nanocrysltallites, Nacional, Mexican Workshop on Nanostructures

Materiasl, Puebla,, T. TORCHYNSKA , México ,

2006 ; Preparation and investigation of SiC poeous sub-microstructures on the substrate layer of Si nanowires,

Extranjero, , International Conference on Nanoscience and Technology, NANO9,, A. DIAZ CANO, T.

TORCHYNSKA, S. SADDOW , Suazilandia ,

2006 ; Raman study of bio-conjugated CdSe/ZnS core-shell quantum dots, Extranjero, 14th Int. Symp.

Nanostructures: Physics and Technology¿,, T. V. TORCHYNSKA , Federación Rusia ,

2006 ; Thermal escape of excitons localized at multi excited states in InAs QDs embedded in symmetric

InGaAs/GaAs quantum wells, Extranjero, International Conference on Nanoscience and Technology,

NANO9,, J. L. CASAS ESPINOLA, T. TORCHYNSKA, , Suazilandia ,

2005 ; Multi excited state photoluminescence mapping on InAS.InGaAS quantum dot structures,, Extranjero,

13th Int. Symp. Nanostructures: Physics and Technology¿,, T.V. TORCHYNSKA , Federación Rusia ,

2005 ; Nanocrystallite and defect related photoluminescence in Si-SiOx systems,, Extranjero, 13th International

Congress on Thin Films, 8th International Conference on Atomixally Controlled Sueface, Interfaces and

Nanostructures, ICTF13/ACSIN8, F. BECERRIL ESPINOZA, T.TORCHYNSKA, Y. GOLDSTEIN ,

Suecia ,

2005 ; Optical and structural investigation on porous SiC layers, Extranjero, IInternational Workshop on

Semiconductor Nanocrystallites, SEMINANO2005,, T.V. TORCHYNSKA, A. DIAZ CANO, M. DYBIEC ,

Hungría ,

2005 ; Optical investigation of Si nanocrystallites and quantum dots embedded in different types of matrices,

Extranjero, 12-th Latin American Congress of Surface Science and its Applications, CLACSA-12, Rio de

Janeiro, Brazil, T. V.TORCHYNSKA , Brasil ,

2005 ; Optical properties of Si nanocrystals in amorphous silicon matrix,, Extranjero, First Int. Conference on

Advances in Optical Materials, Tucson, Arizona, USA, T.V.TORCHYNSKA, A. VIVAS HERNANDEZ,

YASUHIRO , Estados Unidos ,

2005 ; Photoluminescence and structure investigations of Si nano-crystals in amorphous silicon matrix,

Extranjero, 21st Intern. Conference on Amorphous and nanocrystalline Semiconductors, Lisbon,

Portugal,, T. V. TORCHYNSKA, A.VIVAS HERNANDEZ, YASUHIRO , Portugal ,

2005 ; Photoluminescence mapping on InAs-InGaAs quantum dot structures,, Extranjero, First Int. Conference

on Advances in Optical Materials, Tucson, Arizona, USA,, E. VELAZQUEZ LOZADA, T. V.

TORCHYNSKA, M. DYBIC , Estados Unidos ,

2005 ; Photoluminescence mechanisms in Si and Ge nanocrystallites embedded in different types of matrixes,,

Extranjero, International Workshop on Semiconductor Nanocrystallites, SEMINANO2005,, T. V.

TORCHYNSKA , Hungría ,

2005 ; Photoluminescence of Si and Ge nanocrytsallites, Extranjero, 23rd Intern. Conference on Defects in

Semiconductors, ICDS-23, Awaji Island, Japan, T. V. TORCHYNSKA , Japón ,

2005 ; Photoluminescence of Si nanocrystallites in different types of matrices, Extranjero, First Conference on

Advances in Optical Materials, Tucson, Arizona,, T. TORCHYNSKA , Estados Unidos ,

2005 ; Photoluminescence of Si or Ge nanocrystallites embedded in silicon oxide, Extranjero, 21st Intern.

Conference on Amorphous and nanocrystalline Semiconductors, Lisbon, Portugal,, T. V.

TORCHYNSKA, A. VIVAS HERNANDEZ, Y. GOLDSTEIN , Portugal ,

2005 ; Photoluminescence scanning on InAs/Ingaes quantum dot structures, Extranjero, 13th International

Congress on Thin Films, 8th International Conference on Atomixally Controlled Sueface, Interfaces and

Nanostructures, ICTF13/ACSIN8, T.V.TORCHYNSKA, E. VELAZQUEZ LOZADA, J. CASAS ESPI ,

Suecia ,

2005 ; Stimulation excitonic and visible defect related luminescence in porous SiC., Extranjero, 23rd Intern.

Conference on Defects in Semiconductors, ICDS-23, Awaji Island, Japan, T.V.TORCHYNSKA, A. DIAZ

CANO, M. MORALES RODR , Japón ,

2004 ; « Mechanisms of photoluminescence of Si or Ge nanocrystallites embedded in different matrixes,,

Nacional, XXIV Congreso Annual Sociedad Mexicano de Ciencia y Tecnologia de Superficies y

Materiales, SMCTSM A,C., Quintana Roo, 27 September 2004, T.V. TORCHYNSKA , México ,

2004 ; Change of light emission of Si wires during Si/SiOx interface formation, Extranjero, Spring American

MRS meeting, San-Francisco, USA, F.G.BESERRIL ESPINOZA, T. TORCHYNSKA , Estados Unidos ,

2004 ; Characterization of Macro- and Nanoporous silicon, Extranjero, 4-th Internacional Conference ¿Porous

Semiconductors. Science and Technology¿., L. KHOMENKOVA, T.V.TORCHYNSKA , España ,

2004 ; Defect related photoluminescence in Si-SiOx systems,, Extranjero, Inter. Conference on Superlattice,

Nano-structures and Nano-devices, Can Cun, Mexico, F.G.BESERRIL ESPINOZA, T. TORCHYNSKA ,

México ,

2004 ; Luminescence of Si-SiOx systems, Extranjero, Spring American MRS meeting, San-Francisco, USA,, T.

TORCHYNSKA, A.VIVAS HERNANDEZ , Estados Unidos ,

2004 ; Magnetic field effect on the visible photoluminescence of porous silicon,, Extranjero, 4-th Internacional

Conference ¿Porous Semiconductors. Science and Technology¿. Spin, Valencia,, T.V.TORCHYNSKA,

L.Y.KHOMENKOVA, V.N.ZAKHARCHE , España ,

2004 ; Mechanisms of photoluminescence of Si or Ge nanocrystallites embedded in different matrixes,,

Nacional, XXIV Congreso Annual Sociedad Mexicano de Ciencia y Tecnologia de Superficies y

Materiales, SMCTSM A,C., Quintana Roo, T.V. TORCHYNSKA (PLENARY TALK) , México ,

2004 ; Multiple excited states modification in InAs/InGaAs quantum dot structures at high excitation power,,

Extranjero, Intern., Confer.Low Dimentional devices and structures, LCDS2004,Can-Cun, Mexico,

T.V.TORCHYNSKA, H.M. ALFARO LOPEZ, , México ,

2004 ; Non-destractive structural evaluation of porous SiC layers, Extranjero, 4-th Internacional Conference

¿Porous Semiconductors. Science and Technology¿., T.V.TORCHYNSKA, M. MORALES RODRÍGUEZ,

A. VIVAS , España ,

2004 ; Optical properties of porous silicon surface,, Extranjero, Intern., Confer.Low Dimentional devices and

structures, LCDS2004, Can-Cun, Mexico, E. CHAMBON, E. FLORENTIN, T. TORCHYNSKA , México ,

2004 ; Photocurrent spectral response of porous silicon diodes,, Extranjero, 4-th Internacional Conference

¿Porous Semiconductors. Science and Technology¿. Spin, Valencia, 1, T.V.TORCHYNSKA, M.

MORALES RODRÍGUEZ, , España ,

2004 ; Photoluminescence and photocurrent of Schottky dioses base don silicon nanocrystallites., Extranjero,

Inter. Conference on Superlattice, Nano-structures and Nano-devices, Can Cun, Mexico,

T.V.TORCHYNSKA, A. VIVAS HERNANDEZ , México ,

2004 ; Photoluminescence and Raman spectroscopy on porous SiC, Extranjero, Intern., Confer.Low

Dimentional devices and structures, LCDS2004,Can-Cun, Mexico, T. V. TORCHYNSKA, A. DIAZ

CANO, S. JIMÉNEZ-SA , México ,

2004 ; Radiative chanel competition in silicon nanocrystallites, Extranjero, 4-th Internacional Conference

¿Porous Semiconductors. Science and Technology¿., L. KHOMENKOVA, N. KORSUNSKA,

T.TORCHYNSKA , España ,

2004 ; Shell model of semiconductor quantum dots, Extranjero, SPIE Congress, San Diego, T.V.TORCHYNSKA

, Estados Unidos ,

2004 ; Spectroscopic study of multiple excited states in InAs/InGaAs quantum dot structures, Extranjero,

International Conference of Nanometer-Scale Science and Technology, NANO-8, Venice, Italy,,

T.V.TORCHYNSKA, ALFARO LOPEZ H.M , Italia ,

2003 ; High Efficient Solar Cells for Space Applications,, Nacional, XXIII Conferencia Nacional, Huatulco,

Oaxaca, Mexico, T.V.TORCHYNSKA (INVITED TALK) , México ,

2003 ; Hot carrier ballistic transport and photoluminescence excitation in silicon nanocrystallites,, Extranjero,

ASTATPHYS-Mex-2003, Puetrto Valarte, Mexico, T. TORCHYNSKA (INVITED) , México ,

2003 ; Hot carriers and excitation of Si/SiOx interface defect photoluminescence in Si nanocrystallites,,

Extranjero, 22nd Inter. Conference of Defects in Semiconductors, Aaerhus, Denmark,,

T.V.TORCHYNSKA (INVITED) , Dinamarca ,

2003 ; Metastable defects in Si3N4 layers assessed by scanning photoluminescence,, Extranjero, 22nd Inter.

Conference of Defects in Semiconductors, Aaerhus, Denmark,, I.TARASOV, M. DYBIEC,

T.V.TORCHYNSKA , Dinamarca ,

2003 ; Multi shell photoluminescence from InAS/InGaAs quantum dots, Extranjero, SPIE, Congress, San Diego,

T.V.TORCHYNSKA, P. ELISEEV , Estados Unidos ,

2003 ; Scanning luminescence in full-size SiC wafers,, Extranjero, 2003 NSF Design Service and Manufacturing

Grantees and Research Conference, Birmingham, AL, USA, T.V.TORCHYNSKA, S.OSTAPENKO ,

Estados Unidos ,

2003 ; Scanning Photoluminescence of InAs quantum dot structures for optical fiber laser, Nacional, 7

Congresso Nacional Ingeneria Mecanica y Electrica del IPN, T.V.TORCHYNSKA, E.VELASQUEZ

LOZADA , México ,

2003 ; Spacially resolved photoluminescence and thermally stimulated luminescence of semi-insulated SiC

wafers¿,, Extranjero, American 2002 MRS Congress, S. OSTAPENKO, S. SADDOW, T. TORCHYNSKA ,

Estados Unidos ,

2003 ; Visible photoluminescence of Ge/SiOx systems,, Extranjero, 9th Int. Conference Electronic Spectroscopy

and structures, Uppsala.Sweden,, T.V.TORCHYNSKA, A.DIAZ CANO , Suecia ,

2003 ; XPS and USXES investigations of the Si/SiOx interface and oxide defect related photoluminescence in Si

nano/crystallites, Extranjero, 9th Int. Conference Electronic Spectroscopy and structures,

Uppsala.Sweden,, T.V.TORCHYNSKA, M.MORALES RODRIGES , Suecia ,

2002 ; Ballistic effect and new concept of Si wire photoluminescence, Nacional, 8-th IUMRS International

Conference on Electronic Materials IUMRS-ICEM2002, Xi¿án, China,, T.V.TORCHYNSKA (INVITED

TALK) , China ,

2002 ; Ballistic effect and photoluminescence excitation in Si wires,, Extranjero, 7-th Intern. Conference of

nanometer scale science and technology, NANO-7, T.V.TORCHYNSKA, M.MORALES RODRIGES ,

Suecia ,

2002 ; Ballistic transport and photoluminescence excitation in Si wires and dotes, Extranjero, International

Conference on Luminescence and Optical Spectroscopy of Condensed Matters (ICL¿02), Budapest,

Hungary., T.V.TORCHYNSKA, L.YU.KHOMENKOVA , Hungría ,

2002 ; Dependence of self-assembled InAs quantum dot photoluminescence on excitation light power,

Extranjero, 2-nd International Conference on Semiconductor Quantum Dots, QD2002, Tokyo, Japan,,

T.V.TORCHYNSKA, , Japón ,

2002 ; Excitation mechanism in porous silicon, Extranjero, 8-th IUMRS International Conference on Electronic

Materials IUMRS-ICEM2002, Xi¿án, China, T.V. TORCHYNSKA, M.MORALES RODRIGUEZ , China

,

2002 ; Formation of Si/SiOx interface, Extranjero, 4th International Conference on Low Dimensional Structures

and Devices, Fortaleza, Ceara-Brazil., M. MORALES RODRÍGUEZ, T. V. TORCHYNSKA , Brasil ,

2002 ; Formation of the Si/SiO interface and its Influence on the porous silicon photoluminescence, Extranjero,

3-rd Int. Conf. Porous semiconductors, Science and Technology, T.V.TORCHYNSKA,

V.A.YUKHIMCHUK, B.M.BULAKH , Suecia ,

2002 ; Hot carrier transport and photoluminescence in Si nano-crystallites, Extranjero, 2-nd International

Conference on Semiconductor Quantum Dots, QD2002, Tokyo, Japan,, T.V.TORCHYNSKA(INVITED

TALK) , Japón ,

2002 ; Investigacion de la respuesta espectral de la fotocorriente en estructuras de nanocristales del tipo Si

poroso, para su aplicacion en celdas solares para satelites de telecomunicaciones., Extranjero, 2 Congreso

Internacional de Ingeniria ElectroMecanica y de Sistemas,, A.VIVAS HERNANDEZ,

T.V.TORCHYNSKA , México ,

2002 ; Ionizacion termica de multiple estados de InAs, Nacional, XLV Congreso Nacional de Fisica, Poliforum

Leon, Mexico,, T.V.TORCHYNSKA, J.L.CASAS ESPINOLA , México ,

2002 ; Localized Excitons in InAs self-assembled Quantum Dots, Extranjero, 6-th International Workshop on

Expert Evaluation and Control of compound semiconductors materials and Exnologies, EXMATEC

2002, Budapest, Hungary, T.V.TORCHYNSKA (INVITED TALK) , Hungría ,

2002 ; Mechanism of photoluminescence of Ge dots in silicon oxide films,, Extranjero, XI International Material

Research Congress 2002, Can-Cun., T.V.TORCHYNSKA, J.AGUILAR HERNANDEZ , México ,

2002 ; Modification of porous silicon photoluminescence and its excitation during formation Si/SiOx interface,,

Extranjero, XI International Material Research Congress 2002, Can-Cun., T.V.TORCHYNSKA,

F.G.BECERRIL ESPINOZA, , México ,

2002 ; Multiple excited state emission and its thermal quenching in InAs/InGaAs QDs,, Nacional, 8 Conferencia

de Ingenieria Electrica de CINVESTAV, CIE 2002, T.V.TORCHYNSKA, J.L.CASAS ESPINOLA ,

México ,

2002 ; multiple excited states in InAs/InGaAs quantum dot, Extranjero, 4th International Conference on Low

Dimensional Structures and Devices, Fortaleza, Ceara-Brazil, T.V.TORCHYNSKA, J.L.CASAS

ESPINOLA , Brasil ,

2002 ; Nature of visible luminescence and its excitation in Si/SiO2 systems,, Extranjero, International

Conference on Luminescence and Optical Spectroscopy of Condensed Matters (ICL¿02), Budapest,

Hungary., T.V.TORCHYNSKA, V.YUKHIMCHUK , Hungría ,

2002 ; Optical and structural investigation of GeSiO2 systems,, Extranjero, 29th International Symposium on

Compound Semiconductors, ISCS, T.V.TORCHYNSKA (INVITED TALK) , Suazilandia ,

2002 ; Optical and structural studies of Si low-domensional wires and dots,, Extranjero, Spring American MRS

Meeting, 2002, San Francisco, USA, T.V.TORCHYNSKA, F.G.BECERRIL ESPINOZA , Estados Unidos ,

2002 ; Photoluminescence and its excitation mechanism in Si wires and dots, Extranjero, 3-rd Int. Conf. Porous

semiconductors, Science and Technology,, T.V.TORCHYNSKA, A.I.DIAZ CANO , España ,

2002 ; photoluminescence excitation in Si wires, Extranjero, 7-th Intern. Conference of nanometer scale science

and technology, NAO-7, Malmo, Sweden,, T.V.TORCHYNSKA, , Suecia ,

2002 ; Photoluminescence of Ge nano-crystallites, Extranjero, 4th International Conference on Low

Dimensional Structures and Devices, Fortaleza, Ceara-Brazil., T.V.TORCHYNSKA, A.KOLOBOV ,

Brasil ,

2002 ; Structural investigation of GeSiO2 systems,, Extranjero, 29th International Symposium on Compound

Semiconductors, ISCS 2002, Lausanne, Switzerland, T.V.TORCHYNSKA, J.AGUILAR HERNANDEZ, ,

Suazilandia ,

2002 ; Thermal ionization of excitons in InAs QDs embedded into InGaAs/GaAs MQW, Extranjero, 7-th Intern.

Conference of nanometer scale science and technology, NAO-7, Malmo, Sweden, T.V.TORCHYNSKA,

J.L.CASAS ESPINOLA , Suecia ,

2002 ; Thermal ionization of multiply excited states in InAs self-assembled quantum dots embedded into

InGaAs/GaAs MQW, Extranjero, 7-th Intern. Conference of nanometer scale science and technology,

NANO-7,, T.V.TORCHYNSKA , Suecia ,

2002 ; thermal quenching in InAs/InGaAs QDs,, Extranjero, XI International Material Research Congress 2002,

Can-Cun., T.V.TORCHYNSKA, J.L.CASAS ESPINOLA , México ,

2002 ; Thermal quenching of emission of self-assembled InAs quantum dots, Extranjero, 29th International

Symposium on Compound Semiconductors, ISCS 2002, Lausanne, Switzerland., T.V.TORCHYNSKA,

J.L.CASAS ESPINOLA , Suazilandia ,

2002 ; Thermal quenching of emission of self-assembled InAs quantum dots embedded in InGaAs WQW,,

Extranjero, 29th International Symposium on Compound Semiconductors, ISCS, T.V.TORCHYNSKA,

J.L.CASAS ESPINOLA , Suazilandia ,

2001 ; Celdas Solares basadas en estructuras de alambre de Si, Nacional, 6-sexto Congreso Nacional de

Ingeniria Electromecanica y de Sistemas,, T.V.TORCHYNSKA, A.VIVAS HERNANDEZ, A.HERNANDE

, México ,

2001 ; Defect Related Optical Properties of Si Wires and Dots., Extranjero, Inter.Conference. on Advanced

Materials ICAM 2001, Can-Cun, Mexico,, T.V.TORCHYNSKA, A.I.DIAZ CANO , México ,

2001 ; Defect related photoluminescence in Si wires, Extranjero, 367. 21-th International Conference on Defect

in Semiconductors, Giessen, Germany,, T.V.TORCHYNSKA, J.AGUILAR-HERNANDEZ , Alemania ,

2001 ; Estudio fotoluminiscencia de puntos cuanticos de InAs, Nacional, 3-r Congreso Nacional

¿Cristalografia¿, Hermosillo, Mexico,, T.V.TORCHYNSKA, J.L.CASAS ESPINOLA , México ,

2001 ; Estudios de XPS, Fotoluminescencia y su excitacion en alambres de silicio, Nacional, 3-r Congreso

Nacional ¿Cristalografia¿, Hermosillo, Mexico,, T.V.TORCHYNSKA, A.I.DIAZ CANO , México ,

2001 ; Estudios Opticos y de USXES en estructuras de Si de baja dimensionalidad dependientes de la

morfologia y composicion de oxido de solicio en la superficie de Si,, Nacional, 3-r Congreso Nacional

¿Cristalografia¿, Hermosillo, Mexico, T.V.TORCHYNSKA, M.MORALES RODRIGUEZ , México ,

2001 ; excitation in Si low-dimensional Structures, Extranjero, Inter.Conference. on Advanced Materials ICAM

2001, Can-Cun, Mexico, T.V.TORCHYNSKA, M.MORALES RODRIGUEZ , México ,

2001 ; Investigacion de los InAs puntos cuanticos insertados dentro de estructuras laser de InGaAs/GaAs para

fibra optica, Nacional, 6-sexto Congreso Nacional de Ingeniria Electromecanica y de Sistemas,

T.V.TORCHYNSKA, J.L.CASAS ESPINOLA , México ,

2001 ; Photoelectrical characteristics of the diodes based on Si wire Structures, Extranjero, Inter.Conference. on

Advanced Materials ICAM 2001, Can-Cun, Mexico,, T.V.TORCHYNSKA, A.VIVAS HERNANDEZ ,

México ,

2001 ; Photoluminescence of InAs Quantum Dots in InGaAs/GaAs Multi Quantum Wells,, Extranjero,

Inter.Conference. on Advanced Materials ICAM 2001, Can-Cun, Mexico, T.V.TORCHYNSKA,

J.L.CASAS, , México ,

2001 ; Role of Si/SiOx interface in light emission process, Extranjero, III International School-Conference

"Morden problems of semiconductor physics", Drogobuch, Ukraine,, T.V.TORCHYNSKA,

M.K.SHEINKMAN , Ucrania ,

2001 ; USXES, XPS and Optical phenomena in Si low-dimensional structures,, Extranjero, 13-th

Inter.Conference on Vacuum Ultraviolet Radiation Physics, Trieste, Italy,, T.V.TORCHYNSKA,

F.G.BECERRIL ESPINOZA , Italia ,

2000 ; APPLICATION OF IIIV MATERIAL SOLAR CELLS IN SPACE SOLAR ENERGETICS,, Extranjero,

CONFERENCE IN INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS, ACADEMY OF

SCIENCES OF THE CZECH REPUBLIC, PRAHA, CZECH REPUBLIC., T.V.TORCHYNSKA ,

Hungría ,

2000 ; Application of III-V material solar cells in space solar energetics, Nacional, III Workshop on

Optoelectronic Materials and Their applications (including solar cells), Oaxaca, Mexico.,

T.V.TORCHYNSKA (INVITED TALK) , México ,

2000 ; Comparative investigation of structure and photoluminescence of Si low-dimensional Systems,,

Extranjero, 8-th International Conference on the Electronic Spectroscopy and Structures, Berkeley,

USA., G.P.POLUPAN, T.V.TORCHYNSKA , Estados Unidos ,

2000 ; Complex nature of the red photoluminescence and peculiarities of it¿s excitation in porous silicon,

Extranjero, Gordon Research Conferences, July 9-14, 2000, New-London, N.H., USA., T. TORCHYNSKA

(INVITED) , Estados Unidos ,

2000 ; Complex nature of the red photoluminescence and peculiarities of it¿s excitation in porous silicon,,

Extranjero, Gordon Research Conferences, July 9-14, 2000, New-London, N.H., USA.,

T.V.TORCHYNSKA (INVITED TALK) , Estados Unidos ,

2000 ; Desarrollo de celdas solares para satelites de telecomunicaciones espaciales,, Nacional, 5 Quinto

Congreso Naciocal de Ingenieria Electromechanica y de sistemas,, A.VIVAS HERNÁNDEZ,

G.P.POLUPAN, T.V.TORCHYNSKA , México ,

2000 ; Esfuerzos elacticos en las estructuras de semiconductors multicapa, Nacional, 5 Quinto Congreso

Naciocal de Ingenieria Electromechanica y de sistemas,, T.V.TORCHYNSKA, F.CONDE

ZELOCUATECATL , México ,

2000 ; Estudios opticos y de morfologia de la superficie de sistemas de baja simensionalidad a base de silicio,

Nacional, XLIII Congreso Nacional de Fisica, del Puebla, Mexico., T.V.TORCHYNSKA, J.AGUILAR-

HERNANDEZ, F.G.BECERRIL , México ,

2000 ; FIVE LECTURES ON GENERAL ITEM OPTOELECTRONIC MATERIALS AND DEVICES OF

NEW GENERATION,, Extranjero, COLLEGE PREP, INSTITUTE INTERNATIONAL, SANDIEGO,

CA, USA., T.V.TORCHYNSKA , Estados Unidos ,

2000 ; Nature of red photoluminescence in porous silicon,, Extranjero, 3-rd International Conference on

Advanced Semiconductor Devices and Microsystems, ASDAM¿2000, T.V.TORCHYNSKA,

F.G.BACARRIL-ESPINOSA, L.I.KHOMENK , Eslovaquia ,

2000 ; OPTICAL AND STRUCTURAL STUDIES OF SILICON LOWDIMENSIONAL SYSTEMS WIRES

AND DOTS,, Extranjero, CONFERENCE INCENTER OF HIGH TECHNOLOGY MATERIALS AT

THE UNIVERSITY OF NEWMEXICO, ALBUQUERQUE, NEWMEXICO, USA.,

T.V.TORCHYNSKA, , Estados Unidos ,

2000 ; Optical and Structural Studies of silicon low-dimensional wires and dots,, Nacional, XLIII Congreso

Nacional de Fisica, del Puebla, Mexico, T.V. TORCHYNSKA (INVITADA) , México ,

2000 ; Optical and structure studies of silicon low-dimensional systems, Extranjero, 25-th International

Conference on Physics of Semiconductors,, T.V.TORCHYNSKA, J.AGUILAR-HERNANDEZ,

F.G.BECERRIL , Japón ,

2000 ; Optical and structure studies of silicon low-dimensional systems,, Extranjero, 25-th International

Conference on Physics of Semiconductors, Osaka, Japan., T.V.TORCHYNSKA, J.AGUILAR-

HERNANDEZ, F.G.BECERRIL , Japón ,

2000 ; Peculiarities of Raman Spectra from Porous Silicon, Extranjero, 3-Advanced Semiconductor Devices and

Microsystems, ASDAM¿2000, T.V.TORCHYNSKA, L.I.KHOMENKOVA, N.E.KORSUNSKA ,

Eslovaquia ,

2000 ; Photoluminescence and surface structure investigations of silicon low-dimensional systems,, Extranjero,

3-rd International Conference on Materials for Microelectronics, T.V.TORCHYNSKA, J.AGUILAR-

HERNANDEZ, F.G.BECERRIL , Irlanda ,

2000 ; Temperature effect on photoluminescence excitation process of porous silicon, Extranjero, International

Semiconductor Conf., CAS¿2000, T.V.TORCHYNSKA, L.I.KHOMENKOVA, N.E.KORSUNSKA ,

Rumanía ,

2000 ; The nature of photoluminescence excitation bands in porous silicon, Extranjero, International

Semiconductor Conf., CAS¿99, T.V.TORCHYNSKA, L.I.KHOMENKOVA, N.E.KORSUNSKA , Rumanía

,

1999 ; Application of III-V material solar cells in space solar energetics, Nacional, III Workshop on

Optoelectronic Materials and Their applications (including solar cells), August 28-September 1, 2000,

Oaxaca, Mexico, T.V.TORCHYNSKA, G.P.POLUPAN (INVITED TALK) , México ,

1999 ; Change of parameters of the Si IMPACT diodes under the influence of ( ¿- radiation¿,, Extranjero, Third

International Conference Interaction of Radiation with solids¿, Minsk, Belarus, October,,

L.V.SCHERBINA, T.V.TORCHYNSKA , Belarús (Bielorrusia) ,

1999 ; Change of parameters of the Si IMPACT diodes under the influence of ( ¿- radiation, Extranjero, Third

International Conference Interaction of Radiation with solids¿, L.V.SCHERBINA, T.V.TORCHYNSKA,

E.C.SCHERBINA, , Belarús (Bielorrusia) ,

1999 ; Comparative investigation of structure and photoluminescence of Si low-dimensional Systems,,

Extranjero, 8-th International Conference on the Electronic Spectroscopy and Structures, August 8-12,

2000, Berkeley, USA., G.P.POLUPAN, T.V.TORCHYNSKA, , Estados Unidos ,

1999 ; COMPLEX NATURE OF PHOTOLUMINESCENCE AND ITS EXCITATION IN POROUS SILICON

AND ITS EXCITATION, Extranjero, RAKAH INSTITUTE OF PHYSICS HEBREW UNIVERSITY OF

JERUSALEM, ISRAEL., T.V.TORCHYNSKA , Israel ,

1999 ; Crystallography of Semiconductors, Nacional, 2-nd Congreso Nacional de cristalografia, Ensenada, B.C.,

Mexico,, T.V.TORCHYNSKA (INVITED TALK) , México ,

1999 ; Electro and Photoluminescence spectra Transformation in GaP LED structures at the Creation of

Dislocation¿, Extranjero, 10-th International Workshop ¿Physics of Semiconductor Devices¿, Ed.

V.Kumar, S.K.Agarwal, Allied Publishers Ltd., New¿Delhi, INDIA,, T.V.TORCHYNSKA,

V.I.KOOSHNIRENKO , India ,

1999 ; H2O Related Emitting Centers in Interface Layer of Porous Silicon¿,, Extranjero, 20-th International

Conference Defects in Semiconductors¿, July, Berkely, CA,USA,, T.V.TORCHYNSKA,

L.I.KHOMENKOVA , Estados Unidos ,

1999 ; Influence of dislocation on excitonic and DA luminescence spectra in GaP epitaxial layers, Extranjero,

International Semiconductor Conf., CAS¿99, T.V.TORCHYNSKA, N.E.KORSUNSKAYA, , Rumanía ,

1999 ; Mechanism of Injection Enhanced Defect Transformation in LPE CaAs Structures, Extranjero, 20-th

International Conference ¿Defects in Semiconductors¿, July, Berkely, CA, USA,, T.V.TORCHYNSKA

(INVITED TALK) , Estados Unidos ,

1999 ; Nanostructure and Nanotechnology, Extranjero, ESFM INSTITUTE POLYTECHNIC NATIONAL,

MEXICO D.F., MEXICO., T.V.TORCHYNSKA , México ,

1999 ; Optoelectronics and Nanotechnology, Extranjero, ESFM INSTITUTE POLYTECHNIC NATIONAL,

MEXICO D.F., MEXICO., T. V. TORCHYNSKA , México ,

1999 ; Perspectiva de Aplicacion de los Materiales de Silicio y Elementos III-V Grupo en las Celdas Solares

Terrestre y Espacial, Extranjero, . 2-Congreso Internacional de Ingenieria Electromechanica y de

sistemas, T.V.TORCHYNSKA, G.P.POLUPAN, A.I.KABATSKAIA , México ,

1999 ; Perspective de Aplicaci¿n de los Materiales de Silicio y Elementos III y V Grupo en las Celdas Solares

Terrestre y Espacial, Extranjero, 2-th Congreso International de Ingenieria Electromechanica y de

sistemas, October, Mexico D.F.,1999, T.V.TORCHYNSKA, G.P.POLUPAN , México ,

1999 ; PERSPECTIVES FOR APPLICATION OF SI AND GAAS FOR DIRECT COMNVERTATION OF

SOLAR ENERGY,, Extranjero, NATIONAL TECHNICAL UNIVERSITY KPI, KIEV, UKRAINE,

T.V.TORCHYNSKA, , Ucrania ,

1999 ; Perspectives of III¿V Material Solar Cell Application in Space Solar Cell,, Extranjero, 10¿th

International Workshop on Physics of Semiconductor Devices, New¿Delhi, INDIA, 1999.,

T.V.TORCHYNSKA, (INVITED TALK) , India ,

1999 ; Perspectives of III-V Material Solar Cell Application in Space Solar Energetic, Extranjero, 10-th

International Workshop ¿Physics of Semiconductor Devices¿,, T.V.TORCHYNSKA, J.PALACIOS

GOMEZ, , India ,

1999 ; Porous silicon. Some aspects of photoluminescence and photoluminescence excitation,, Extranjero, IX

Latin American Congress on Surface Science and it¿s applications- CLACSA¿99¿, July, Habana, Cuba,,

T.V.TORCHYNSKA, J. PALACIOS GOMES , México ,

1999 ; Radiation and temperature induced parameter variation of Si and III-V Material Solar Cells for Space

Application, Extranjero, IEEE International Integrated Reliability Workshop 1999, Sranford, CA,USA,,

T.V.TORCHYNSKA, G.P.POLUPAN (INVITED TALK) , México ,

1999 ; Role of surface in porous silicon photoluminescence¿,, Nacional, Conf. Me6tropolitana de Microscopia

de Tunelaje Fuerza Atomica, Magnetica y Afines, March, 1999, Mexico D.F., T.V.TORCHYNSKA, A.

GARCIA BORGUEZ , México ,

1999 ; Suboxide-related center as the source of the intense Red luminescence of porous Si.¿,, Extranjero, 3-th

International Conference Low Dimensional Structures and Devices, September, Antalia,Turkey, 1999.,

T.V.TORCHYNSKA, N.E.KORSUNSKAYA , Turquía ,

1999 ; The nature of photoluminescence excitation bands in porous silicon, Extranjero, International

Semiconductor Conf., CAS¿99,, T.V.TORCHYNSKA, L.I.KHOMENKOVA, N.E.KORSUNSKA ,

Rumanía ,

1999 ; THREE ELEMENTARY BANDS OF POROUS SILICON RED PHOTOLUMINESCENCEAND

THEIR EXCITATION, Extranjero, INSTITUTE SEMICONDUCTOR PHYSICS NASU, KIEV,

UKRAINE., T.V.TORCHYNSKA , Ucrania ,

1999 ; Three types of Luminescent centres in porous silicon, Extranjero, 11-th Inter. Conf. On Thin Film,

August, Can Cun, Mexico, 1999,, T.V.TORCHYNSKA, J.AGUILAR HERNANDEZ , México ,

1999 ; 1980, APRIL T.V.TORCHYNSKA, PHOTOCHEMICAL REACTIONS IN IIVI

PHOTOELECTRONIC MATERIALS,, Extranjero, 10-th International Workshop ¿Physics of

Semiconductor Devices¿,, , India ,

1998 ; Adsorption assisted excitation of porous silicon photoluminescence, Extranjero, 1998 MRS American Fall

Meeting, Boston, USA,, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA , Estados Unidos ,

1998 ; CURRENT SITUATION FOR SPACE AND TERRESTRIAL SOLAR ENERGETIC,, Extranjero,

ESFM INSTITUTE POLYTECHNIC NATIONAL, MEXICO D.F., MEXICO, T.V.TORCHYNSKA ,

México ,

1998 ; Deep centers in AlGaAs epitaxiallayers hoghly doped with amphoteric impurities, Extranjero, 9 th-

CIMTEC -World Ceramics Congress & Forum on New Materials, Faenza, ITALY,,

T.V.TORCHINSKAYA, V.I. KOOSHNIRENKO , México ,

1998 ; Oxidation Process Effects on Porous Silicon Photoluminescence, Extranjero, International

Semiconductor Conf., CAS¿98, Sinai, ROMANIA,, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA ,

México ,

1998 ; Recombination - Enhanced Mikroprecipitate formation in LPE GaAs-structures¿, Extranjero, Inter.

Conference ¿Extended Defects in Semiconductors¿, Jaszowiec, POLAND,, T.V. TORCHINSKAYA

(INVITED TALK) , Polonia ,

1998 ; Role of oxidation process on porous silicon photoluminescence and its excitation¿,, Extranjero, I1998

MRS American Fall Meeting, Boston, USA, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA , Estados

Unidos ,

1998 ; ROLE OF OXIDATION PROCESS ON POROUS SILICONPHOTOLUMINESCENCE AND ITS

EXCITATION,, Extranjero, RACAH INSTITUTE OF PHYSICS , HEBREW UNIVERSITY,

JERUSALEM, ISRAEL., T.V.TORCHYNSKA, , Israel ,

1998 ; THE MECHANISM OF INJECTION ENHANCED LIGHTEMITTING DIODE DEGRADATION,

Extranjero, ESFM INSTITUTE POLYTECHNIC NATIONAL, MEXICO D.F., MEXICO.,

T.V.TORCHYNSKA, , México ,

1998 ; Three approaches to surface substance role investigation in porous silicon photoluminescence,

Extranjero, 9 th- CIMTEC -World Ceramics Congress & Forum on New Materials, Faenza, ITALY,,

T.V.TORCHINSKAYA, N.E.KORSUNSKAYA , Italia ,

1997 ; ABSORPTION ASSISTED EXCITATION OF POROUS SILICON PHOTOLUMINESCENCE,,

Extranjero, INSTITUTE OF PHYSICS, POLISH ACADEMY OF SCIENCES, WARSAW, POLAND., T.

V. TORCHYNSKA , Polonia ,

1997 ; Centers in AlGaAs Epitaxial layers Highly Doped with Germanium,, Extranjero, XI-th International

Conference on Ternary and Multinary Compounds ICTMC 11, Salford, UK,, T.V.TORCHINSKAYA,

V.I. KOOSHNIRENKO , Irlanda ,

1997 ; Comparison of Si and AlGaAs/GaAs solar cell perspectives, Nacional, Second International School-

Conference ¿Physical Problems in Material Science of Semiconductors¿, Chernivtsi, UKRAINE,

T.V.TORCHINSKAYA (INVITED TALK) , México ,

1997 ; Complex studies of porous silicon aging phenomena, Extranjero, International Semiconductor

Conference, CAS,97, Sinai, ROMANIA, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA , Rumanía ,

1997 ; Deep centers in AlGaAs Epitaxial layers Highly Doped with Germanium,, Extranjero, XXVI

International School of Physics of Semiconducting Compounds, Jaszowiec¿97, POLAND,

T.V.TORCHINSKAYA, V.I. KOOSHNIRENKO , Polonia ,

1997 ; Deep traps in AlGaAs:Ge layers, Extranjero, Ninth International Workshop ¿Physics of Semiconductor

Devices¿ , Delhi, INDIA, T.V.TORCHINSKAYA, V.I. KOOSHNIRENKO , India ,

1997 ; RECOMBINATION ENHANCED MIKROPRECIPITATE FORMATION IN LPE

GAASSTRUCTURES,, Extranjero, INSTITUTE OF PHYSICS, POLISH ACADEMY OF SCIENCES,

WARSAW, POLAND, 1998 , SEPTEMBER T.V. TORCHINSKAYA , Polonia ,

1997 ; Several ways of excitation and Degradation processes of porous silicon photoluminescence¿, Extranjero,

NATO Advanced Research Workshop ¿Heterostructure Epitaxy and Devices - HEAD, 97¿, Smolenice,

SLOVAKIA, T.V.TORCHINSKAYA, N.E.KORSUNSKAYA , Eslovaquia ,

1997 ; Transformation of GaP Layer luminescence Spectra on Introduction of Dislocations,, Extranjero, NATO

Advanced Research Workshop ¿Heterostructure Epitaxy and Devices - HEAD, 97¿, Smolenice,

SLOVAKIA, T.V.TORCHINSKAYA (INVITED TALK) , México ,

1997 ; Two ways of porous Si photoluminescence excitation¿, Extranjero, Second International Conference

¿Low Dimensional Structures & Devices¿, Lisbon, PORTUGAL,, T.V.TORCHINSKAYA,

N.E.KORSUNSKAYA , Portugal ,

1996 ; BASIC PROCESSES OF IIIV LIGHTEMITTING DIODE BULK DEGRADATION,, Extranjero,

RESEARCH INSTITUTE FORTECHNICAL PHYSICS AND INSTITUTE OF MATERIAL

SCIENCES , HUNGARY ACADEMY OF SCIENCES, HUNGARY, 1996, DECEMBER

T.V.TORCHYNSKA, , Hungría ,

1996 ; Deep centers in MOCVD InGaAs photodiodes for optical fiber and its influence on diode paremeters,

Extranjero, International Conference ¿Physics and Industry¿, Golitsino, Moscow, RUSSIA, 1996.,

T.V.TORCHINSKAYA , Federación Rusia ,

1996 ; Electrical and optical properties of non-uniform semiconducting synthetic diamond, Extranjero, IEEE

SIMC - 9, Toulouse, FRANCE, 1996, T.V.TORCHINSKAYA, Y.V.VOROBIEV , Francia ,

1996 ; ELECTRONICALLY STIMLATED DEFECT TRANSFORMATION PROCESSES IN IIVI AND IIIV

MATERIALS,, Extranjero, INSTITUTE OF ADVANCED TECHNOLOGY, BARILAN UNIVERSITY,

RAMATGAN,ISRAEL., T.V.TORCHYNSKA, , Israel ,

1996 ; Excitation Mechanism of Porous Si Photoluminescence, Extranjero, International Conference ¿Advanced

Semiconductor Devices and Microsystems- ASDAM¿96¿, Smolenice, SLOVAKIYA,,

T.V.TORCHINSKAYA, N.E.KORSUNSKAYA, L.YU. KHOMENKOV , Eslovaquia ,

1996 ; Optical and field memory effects in semiconducting diamond, Extranjero, International Conference

¿Advanced Semiconductor Devices and Microsystems- ASDAM¿96¿, Smolenice, SLOVAKIYA,

T.V.TORCHINSKAYA, Y.V.VOROBIEV , Eslovaquia ,

1996 ; Photoluminescence and EPR studies of Porous Silicon, Extranjero, International Conference on

Luminescence and Optical Spectroscopy of Condensed Matter, Prague, CZECH REPUBLIC,

T.V.TORCHINSKAYA, N.E.KORSUNSKAYA, L.YU. KHOMENKOV , República Checa ,

1995 ; BASIC MECHANISM OF INJECTION ENHANCED LIGHTEMITTING DIODE DEGRADATION,,

Extranjero, GROUPIE DE PHYSIQUE DES SOLIDES, UNIVERSITIES PARIS 67 , PARIS,FRANCE,

T.V.TORCHYNSKA , Francia ,

1995 ; Characterization of deep level defects in MOCVD InGaAs layers, Extranjero, SPIE¿s 40th Annual

Meeting Optical Science, Engineering and Instrumentation, San-Diego, California, USA,,

T.V.TORCHINSKAYA , Estados Unidos ,

1995 ; Germanium Related Deep Centers in AlGaAs Epitaxial Layers¿, Extranjero, 1995 MRS Spring Meeting,

San- Francisco, USA, T.TORCHYNSKA , Estados Unidos ,

1995 ; Germanium related deep centers in AlGaAs epitaxial layers¿,, Extranjero, Third IUMRS International

Conference in Asia (IUMRS-ICA-'95), Seoul, SOUTH KOREA,, T.V.TORCHINSKAYA,

V.I.KOOSHNIRENKO , República Corea ,

1995 ; Influence of surface on porous Si photoluminescence and its excitation spectra¿,, Extranjero, 1995 MRS

Spring Meeting, San-Francisco, USA, B.M.BULAKH, T.V.TORCHINSKAYA , Estados Unidos ,

1995 ; Influence of the substances on the silicon wires surface on the photoluminescence of porous silicon,,

Extranjero, VI International Conference ¿Thin films in Electronics¿, September 1995, Kherson,

Ukraine., T.V.TORCHINSKAYA, N.E.KORSUNSKAYA, B.DZUMAEV , Ucrania ,

1995 ; Porous Silicon, New Optoelectronic Material, Extranjero, XIII Symposia Latino American Solid Physics,

Porto Alegre, BRASIL,, T.V.TORCHINSKAYA , Brasil ,

1995 ; RECOMBINATION ENHANCED DEFECT REACTIONS AND ROLE OF RED EMITTING LIGHT

IN GAP LEDS DEGRADATION,, Extranjero, DEPARTMENT OF INORGANIC MATERIALS

ENGINEERING, SEOUL NATIONAL UNIVERSITY, SEOUL, SOUTH KOREA,

T.V.TORCHINSKAYA , República Corea ,

1995 ; Recombination enhanced defect reactions and role of red emitting light in GaP LED's degradation",,

Extranjero, Third IUMRS International Conference in Asia (IUMRS-ICA-'95), Seoul, SOUTH KOREA,,

T.V.TORCHINSKAYA , República Corea ,

1995 ; SiOx related photoluminescence excitation in porous silicon",, Nacional, 1995 MRS American Fall

Meeting, Boston, USA, T.V.TORCHINSKAYA , Estados Unidos ,

1994 ; Caracterization of deep - level defects and their connection with the perfomance of InxGa1-xAs/InP p-I-

n photodiodes, Extranjero, SPIE Conference ¿Microelectronic and Manufacturing¿94¿, 1994, Taxac,

USA, T.V.TORCHINSKAYA, V.I.KOOSHNIRENKO, C.J.MINER , Estados Unidos ,

1994 ; Characterization of deep-level defects in MOCVD InxGa1-xAs layers",, Extranjero, International 8th

Conference on Semi-insulating III-V Materials, Warsaw, POLAND, V.TORCHINSKAYA, , Polonia ,

1994 ; ,CHARACTERIZATION OF DEEPLEVEL DEFECTS IN MOCVDINXGA1XAS LAYERS ,,

Extranjero, INSTITUTE OF PHYSICS, POLISH ACADEMY OF SCIENCES, WARSAW, POLAND,

V.TORCHINSKAYA, , Polonia ,

1994 ; INJECTIONENHANCED DEFECT REACTIONS IN IIIV LIGHT EMITTING DIODES,, Extranjero,

MATERIALS TECHNOLOGY RD OPTOELECTRONICS DIVISION, HEWLETT PACKARD COM.

, SANJOSE, CALIFORNIA, USA, T.V.TORCHINSKAYA, , Estados Unidos ,

1994 ; Injection-enhanced defect reactions in III-V light emitting diodes",, Extranjero, IEEE International

Reliability Physics Symposium, Silicon Velley, San Jose, USA, 1994., T.TORCHYNSKA , Estados Unidos

,

1994 ; The deep center defects and field dependence of their parameters in MOCVD InxGa1-xAs/InP p-I-n

photodiodes, Extranjero, ¿, International Conference on Electronic Materials (ICEM¿94), Hsinchu,

Taiwane, T.V.TORCHINSKAYA, V.I.KOOSHNIRENKO, L.V.SHCHERBINA , Taiwán, Provincia China ,

1994 ; Transformation of exitonic spectra of GaN:N light-emitting structures on introduction of dislocations,

Extranjero, International Conference on Electronic Materials (ICEM¿94) , Hsinchu, Taiwane,,

T.V.TORCHINSKAYA, , Taiwán, Provincia China ,

1993 ; ,DEFECT REACTIONS IN IIIV LIGHT EMITTING DIODES IN UNEQULIBRIUM STATE,,

Extranjero, OPTOELECTRONIC DEPARTMENT RD , BELL NORTHERN RESEARCH, OTTAWA,

ONTARIO, CANAD, T.V.TORCHINSKAYA , Canadá ,

1993 ; INJECTIONENHANCED DEFECT REACTIONS IN IIIV LIGHT EMITTING DIODES,, Extranjero,

FACULTY OF APPLIED SCIENCE AND ENGINEERING, TORONTO UNIVERSITY, WATERLOO

UNIVERSITY, MACMASTER UNIVERSITY,ONTARIO, CANADA, T.V.TORCHINSKAYA , Canadá

,

1993 ; TEMPERATURE DEPENDENCE PECULARITIES OF POROUS SILICON

PHOTOLUMINESCENC, Extranjero, EMRS 1993 SPRING MEETING, STRASBOURG, FRANCE,

1993., A.G.SENCHILO, T.V.TORCHUNSKAYA, B.BULAKH, V.T , Francia ,

1993 ; Temperature dependence pecularities of porous silicon photoluminescence¿, Extranjero, E-MRS 1993

Spring Meeting, Strasbourg, FRANCE,, A.G.SENCHILO, T.V.TORCHUNSKAYA, , Francia ,

1992 ; THE EFFECT OF AN AVALANCHE BREAKDOWN ON MINORITY CARRIERS LIFETIME IN

LIGHT EMITTING DIODES, Extranjero, INTERNAT. CONFER. MICROELECTRONICS AND

COMPUTER SCIENCES, 1992,KISHINEV (VE ARTICULOS IN EXTENSO)., T.V.TORCHYNSKA ,

República Moldavia ,

1991 ; Comparison investigation InGaAsP/InP laser diodes¿, Nacional, III-th USSR Conference ¿Physical

Bases of Relability and Degradation of Semiconductor Devices¿, Kushunew, USSR, 1991,

T.V.TORCHINSKAYA , México ,

1991 ; ELECTRONICALLY ENHANCED DEFECT REACTIONS IN WIDEGAP SEMICONDUCTORS,,

Extranjero, INSTITUTE OF PHYSICS, POLISH ACADEMY OF SCIENCES, WARSAW, POLAND.,

T.V.TORCHYNSKA , Polonia ,

1991 ; Injection-stimulated reactions of defects in III-V LED¿s, Extranjero, III-th USSR Conference ¿Physical

Bases of Relability and Degradation of Semiconductor Devices¿, Kushunew, USSR, 1991,,

T.V.TORCHYNSKAYA, , República Moldavia ,

1991 ; New centers, attributed to Ge in AlGaAs dowble heterostructure light-emitting diodes and its injection-

stimulated anneling, Extranjero, III-th USSR Conference ¿Physical Bases of Relability and Degradation

of Semiconductor Devices¿, Kushunew, USSR, 1991, T.V.TORCHYNSKAYA, V.I.GNATENKO ,


1991 ; 1991, ELECTRONICALLY ENHANCED DEFECT REACTIONS IN WIDEGAP

SEMICONDUCTORS, Extranjero, UNIVERSITY OF ROME (ROME) AND INSTITUTE OF

THEORETICAL PHYSICS OF UNIVERSITY OF MESSINA (MESSINA), ITALY,

T.V.TORCHYNSKA, , Italia ,

1990 ; Deep centers in AlGaAs heteroepitaxial diodes, Extranjero, XII-USSR Conference ¿Physics of

Semiconductors¿, Kiev, USSR, 1990,, T.V.TORCHYNSKA, M.K.SHEINKMAN , Ucrania ,

1990 ; Deep centers in AlGaAs heteroepitaxial structures, Extranjero, V-th USSR Conference ¿Physical

processes in Semiconductor structures¿, Kaluga, USSR,, T.V.TORCHINSKAYA , Federación Rusia ,

1990 ; INJECTIONENHANCED DEFECTREACTIONS IN IIIV LIGHTEMITTINGMATERIALS,,

Extranjero, INSTITUTE OF PHYSICS, CENTRAL LABORATORY OF SOLAR ENERGY

CONVERSION, BULGARIAN ACADEMY OF SCIENCES, SOFIA, BOLGARIA, T.V.TORCHYNSKA

, Bulgaria ,

1990 ; Recombination-enhanced defect reactions in light-emitting structures, Extranjero, XII-USSR Conference

¿Physics of Semiconductors¿, Kiev, USSR, 1990,, T.V.TORCHYNSKAYA , Ucrania ,

1990 ; Recombination-enhanced processes in epitaxial layers of III-V compounds, Extranjero, III USSR

Conference ¿Physics and Technology of thin semiconductor films¿, Ivano-Frankovsk, October,

1990,USSR, T.V.TORCHYNSKAYA , Ucrania ,

1989 ; Degradation of GaP:N and GaP:N,Zn-O light-emitting diodes,, Extranjero, Ukraine Conference¿Physical

methods of the forecast in the quality control and reliability tasks, Chernigov, September, 1989,

Ukraine, T.V.TORCHYNSKA, A.G.KARABAEV, T.G.BERDINSKIKH , Ucrania ,

1989 ; General defect transformation processes in light-emitting diodes under degradation, radiation and

ultrasound treatment. Reliability forecast,, Extranjero, Ukraine Conference¿Physical methods of the

forecast in the quality control and reliability tasks, Chernigov, September, 1989, Ukraine, T.V.

TORCHYNSKAYA, G.I.SEMENOVA, M.K.SHEINKMA , Ucrania ,

1989 ; Injection-enhanced deep center transformation in red AlGaAs light-emitting diodes¿,, Extranjero, I ¿th

USSR Conference ¿Physical Bases of Solid State Electronics¿, Leningrad, USSR, 1989,,

T.V.TORCHYNSKA, DZ. ABDULAEV, A.SHMATOV , Federación Rusia ,

1989 ; Joint mechanism of the defect transformation in light-emitting diodes under degradation, radiation and

ultrasound treatmen, Extranjero, International Conference ¿Physical problems of the optoelectronics¿,

¿OPTOELECTRONICS¿89¿,Baku, October, 1989,, T.V. TORCHYNSKAYA , Federación Rusia ,

1989 ; Physics of the degradation and reliability processes for red and infrared light-emitting diodes on the

base AlGaAs heterostructures, Extranjero, Ukraine Conference¿Physical methods of the forecast in the

quality control and reliability tasks, Chernigov, September, 1989, Ukraine,, T.V.TORCHYNSKA,

ZH.S.ABDULAEV, A.ZARECGNEV , Ucrania ,

1986 ; Conection of the degradation process of InGaAsSi LED with the transformation of structural defects,

Extranjero, 2-th USSR Conference ¿Physical base of Reliability and degradation of semiconductor

devices¿, Kishinev, 1986,, G.I.SEMENOVA, T.V.TORCHYNSKA, T.G.BERDINSKIKH , República

Moldavia ,

1986 ; Degradation of GaAS Si LED, Extranjero, 2TH USSR CONFERENCE PHYSICAL BASE OF

RELIABILITY AND DEGRADATION OF SEMICONDUCTOR DEVICES, KISHINEV,,

G.I.SEMENOVA, T.V.TORCHYNSKA, , República Moldavia ,

1986 ; Degradation of the green GaP:N light emitting diodes and factors, influent on, Extranjero, 2-th USSR

Conference ¿Physical base of Reliability and degradation of semiconductor devices¿, Kishinev, 1986,

T.V. TORCHYNSKAYA, M.K.SHEINKMAN, , República Moldavia ,

1984 ; ¿Connection of structure defects with excess current in light-emitting InGaAs/GaAs structures,

Extranjero, IV USSR Conference ¿Defect of Structure in Semiconductors¿, Novosibirsk, USSR,

G.I.SEMENOVA, T.V.TORCHYNSKA, E.BRAILOVSKII , Federación Rusia ,

1984 ; Influence of the electron irradiation with thereshold energy on the characteristics of the InGaAs:Si light

emitting diodes and their structural defects, Extranjero, USSR Conference ¿Radiation physics of

semiconductors and related materials¿, Tashkent, 1984, October, USSR, G.I.SEMENOVA,

T.V.TORCHYNSKA, T.G.BERDINSKIKH , Federación Rusia ,

1984 ; Physical nature of the light emitting diode and semiconductor laser degradation,, Extranjero, 3-th USSR

Conference ¿Physics of the degradation¿, 1984, November, Suzdal, USSR,, T.V. TORCHYNSKAYA ,

Federación Rusia ,

1983 ; Elementary mechanisms of the photofatigue, aging and degradation processes in II-VI photoresistors,,

Extranjero, 5-th USSR Conference ¿Physics and Tekhnical application of II-VI semiconductors¿, Vilnus,

December, 1983, USSR, T.V.TORCHYNSKA , Federación Rusia ,

1983 ; Invesyigation of the Photofatigue processes in solar cells Cu2S-CdS, Extranjero, 5-th USSR Conference

¿Physics and Tekhnical application of II-VI semiconductors¿, Vilnus, December 1983, USSR,

T.V.TORCHYNSKA, M.MIRZAZHANOV, A.MARCHENKO , Federación Rusia ,

1983 ; Photostimulated transformation and formation of local centers in II-VI semiconductors¿, Extranjero, V-

th USSR Conference ¿Radiation Physics and Chemistry of Ionic Crystals¿, Riga, USSR, 1983,

N.E.KORSUNSKAYA, T.V.TORCHYNSKAYA , Federación Rusia ,

1983 ; THE DECREASING OF THE DEEP RECOMBINATION CENTERS IN THE IMPATT DIODES,

Extranjero, 4TH LUND INTERNATIONAL CONFERENCE ON DEEP LEVEL IMPURITIES IN

SEMICONDUCTORS, MAY 1983, HUNGARY, EGER, 1983, ISMAILOV K.A., KONAKOVA R.V.,

TORCHYNSKAYA T.V., , Hungría ,

1982 ; Aging and degradation of phtoresistors based on CdS:Cu:Cl thin films, Extranjero, USSR Conference

¿Physical base of reliability and degradation of the semiconductor devices¿, Kushinev, 1982, May,

USSR, T.V.TORCHYNSKA, L.BAIDOKH , República Moldavia ,

1982 ; Mechanism of ageing process in phtoresistors based on CdS:Cu:Cl thin films¿, Nacional, II-th Ukrainian

Conference ¿Photoelectric phenomena in Semiconductors¿, Odessa, USSR, 1982,, T.V.TORCHYNSKA ,

Ucrania ,

1982 ; Mechanisms of photostimulated defect formation in Semiconductors¿,, Extranjero, VIII-USSR

Conference ¿Physics of Semiconductors¿, Baku, USSR,, N.E.KORSUNSKAYA, I.V.MARKEVICH,

T.V.TORCHINSK , Federación Rusia ,

1982 ; Mechanisms of photostimulayed defect formation in II-VI crystals and devices based on it, Extranjero, II-

th Ukrainian Conference ¿Photoelectric phenomena in Semiconductors¿, Odessa, USSR,,

N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSK , Ucrania ,

1982 ; Photofatigue and aging in solar cells¿, Nacional, USSR Conference ¿Physical base of reliability and

degradation of the semiconductor devices¿, Kushinev, 1982, T.V.TORCHYNSKA , República Moldavia ,

1982 ; Photostimulated processes in CdS-Cu2S solar cells¿, Extranjero, II-th Ukrainian Conference

¿Photoelectric phenomena in Semiconductors¿, Odessa, USSR, 1982, T.V.TORCHYNSKA, M-

MIRZAZHANOV , Ucrania ,

1981 ; Mechanisms of photo-induced defect creation in II-VI compouns and Devices,, Extranjero, International

Conference ¿Defects in Dielectric crystals¿, Riga, May 1981,USSR, I.V.MARKEVICH,

T.V.TORCHINSKAYA, M.K.SHEINKMAN , Federación Rusia ,

1981 ; Physical nature of degradation of light-emitting diodes and lasers, Extranjero, USSR Conference on

Luminescence, Leningrad, USSR, 1981, T.V.TORCHYNSKA, M.K.SHEINKMAN , Federación Rusia ,

1980 ; INFLUENCE OF THE ELECTRON IRRADIATION WITH THERESHOLD ENERGY ON THE

CHARACTERISTICS OF THE INGAASSI LIGHT EMITTING DIODES AND THEIR

STRUCTURAL DEFECTS,, Extranjero, USSR CONFERENCE RADIATION PHYSICS OF

SEMICONDUCTORS AND RELATED MATERIALS, TASHKENT, 1984, OCTOBER,

G.I.SEMENOVA, T.V.TORCHYNSKA, T.G.BERDINSKIKH, , Uzbekistán ,

1980 ; Mechanisms of the optical recordering and destraction information in CdS single crystals, based on the

photostimulated processes of local center transformation,, Extranjero, VI International Conference

Optics and Photoelectric phenomena in Solid State¿, Varna, Bulgaria,, N.E.KORSUNSKAYA,

I.V.MARKEVICH, T.V.TORCHINSK , Bulgaria ,

1980 ; MEMORY EFFECTS, STIMULATED BY THE LOW TEMPERATURE ANNELING OR DOPING IN

CDS CRYSTALS, Extranjero, VI INTERNATIONAL CONFERENCE OPTICS AND

PHOTOELECTRIC PHENOMENA IN SOLID STATE, VARNA, BULGARIA, MAY, 1980,

E.VATEVA, KORSUNSKAYA N.E., MARKEVICH I.V., NASHEV , Bulgaria ,

1980 ; Photostimulated deep centers convertion in II-VI semiconductors, Nacional, II-th USSR Conference

¿Deep Levels in Semiconductors¿, Tashkent, USSR, 1980,, T.V.TORCHINSKAYA , Federación Rusia ,

1979 ; Mechanism of the phtoconductivity degradation in CdS:Cu single crystals¿,, Extranjero, I-th Ukrainian

Conference ¿Photoelectric Phenomena in Semiconductors¿, Uzhgorod, USSR,1979,,

N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSK , Ucrania ,

1979 ; Photo (recombination) enhanced local center transformation in CdS and ZnSe monocrystals, Extranjero,

International Conference ¿Radiation Physics of Semiconductors and Related Materials¿, Tbilisi, USSR,

1979, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSK , Federación Rusia ,

1979 ; Photochemical reactions and center interaction in ZnSe, Extranjero, I-th Ukrainian Conference

¿Photoelectric Phenomena in Semiconductors¿, Uzhgorod, USSR, 1979,, I.V.MARKEVICH,

T.V.TORCHINSKAYA, M.K.SHEINKMAN , Ucrania ,

1979 ; Reversible increasing of photoconductivity of CdS:Cu single crystal under visible light actions¿,

Extranjero, I-th Ukrainian Conference ¿Photoelectric Phenomena in Semiconductors¿, Uzhgorod,

USSR,1979, N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSKA , Ucrania ,

1979 ; Transformation of DA-pairs and more complicated complexes under light irradiation in CdS single

crystals, Extranjero, I-th Ukrainian Conference ¿Photoelectric Phenomena in Semiconductors¿,

Uzhgorod, USSR, 1979, I.V.MARKEVICH, T.V.TORCHINSKAYA , Ucrania ,

1977 ; Interaction of the local defects in compensated CdS single crystals and change of this interaction under

illumination, Extranjero, I-th USSR Scientific Conference ¿Creation and Characterisation II-VI and IV-

VI Compounds and based on it solid solutions¿, Moscow, USSR, 1977, N.E.KORSUNSKAYA,

I.V.MARKEVICH, T.V.TORCHINSK , Federación Rusia ,

1977 ; Investigation of new luminescence band and photochemical radiation center transformation in CdS:Li

monocrystals, Extranjero, Proc. of Inter. Conference ¿ Science and Technic. of New Materials¿, Moscow,

USSR, 1977,, T.V.TORCHINSKAYA , Federación Rusia ,

1977 ; INVESTIGATION OF THE MECHNISM OF PHOTOCONDUCTIVITY DEGRADATION IN

CDSCUCL SINGLE CRYSTALS AND PHOTORESISTORS BASED ON CDSCUCL FILM,

Extranjero, ITH USSR SCIENTIFIC CONFERENCE CREATION AND CHARACTERISATION IIVI

AND IVVI COMPOUNDS AND BASED ON IT SOLID SOLUTIONS, MOSCOW, USSR, 1977,

T.V.TORCHINSKAYA, A.M.PAVELEZ, , Federación Rusia ,

1977 ; Investigation of the mechnism of photoconductivity degradation in CdS:Cu:Cl single crystals and

photoresistors based on CdS:Cu:Cl films, Extranjero, I-th USSR Scientific Conference ¿Creation and

Characterisation II-VI and IV-VI Compounds and based on it solid solutions¿, Moscow, USSR, 1977,

N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSK , Federación Rusia ,

1977 ; Nature and Symmetry of complex defects in CdS:Li single crystals, Extranjero, I-th USSR Scientific

Conference ¿Creation and Characterisation II-VI and IV-VI Compounds and based on it solid

solutions¿, Moscow, USSR, 1977, I.V.MARKEVICH, T.V.TORCHINSKAYA, V.I.BUDYANSKII ,

Federación Rusia ,

1976 ; Investigation of the new luminescence band nature in CdS:Li single crystals¿,, Extranjero, IV USSR

Conference ¿Physics, Chemistry and Technical Applications of II-VI Semiconductors¿, Odessa, USSR,

I.V.MARKEVICH, T.V.TORCHINSKAYA, M.K.SHEINKMAN , Ucrania ,

1976 ; Photochemical reactions of diffent types in clean and doped CdS singlecrystals, and their mechanisms,

Extranjero, IV USSR Conference ¿Physics, Chemistry and Technical Applications of II-VI

Semiconductors¿, Odessa, USSR, 1976., N.E.KORSUNSKAYA, I.V.MARKEVICH, T.V.TORCHINSK ,

Ucrania ,

1976 ; Photoluminescence of the CdS:Li single crystals, Extranjero, XXIII-th USSR Conference on

Luminescence, Kushunew, USSR, 1976,, I.V.MARKEVICH, T.V.TORCHINSKAYA, M.K.SHEINKMAN ,


0 ; Exciton capture and thermal escape in InAs dot-in-a-well laser structures,, Extranjero, 9th International


3July 2008,, T. V. TORCHYNSKA, , España ,

FORMACION ACADEMICA

NIVELES/GRADOS

ACADEMICOS

07/08/1992 ; DIPLOMADO, PROFESOR TITULAR (FULL PROFESSOR), PROF. 020334, ACADEMICA

NACIONAL DE CIENCIAS DE UCRANIA, Ucrania , , ENTIDADES EXTERNAS , TITULO DE

PROFESSOR TITULAR

01/03/1991 ; DIPLOMADO, SENIOR CIENTIFICO INVESTIGADOR, 612072, ACADEMICA NACIONAL DE

CIENCIAS DE UCRANIA, Ucrania , , ENTIDADES EXTERNAS , TITULO DE SENIOR Cientifico

Investigador

01/02/1991 ; DOCTORADO, SEGUNDO GRADO-DOCTOR DE CIENCIAS FISICA Y MATEMATICAS

(HABILITACION), DT 005959, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, Ucrania ,

, ENTIDADES EXTERNAS , MECANISMO DEL PROCESO DE DEGRADACION EN

ESTRUCTURAS CON EMISION DE LUZ Y FOTOELECTRICAS

24/03/1978 ; DOCTORADO, DOCTOR EN CIENCIAS DE FISICA Y MATEMATICAS (PH.D), FM 006854,

ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, Ucrania , , ENTIDADES EXTERNAS ,

REACCIONES FOTOQUIMICAS EN MATERIALES DE SEMICONDUCTORESDE IIVI.

01/03/1973 ; MAESTRIA, MAESTRA DE CIENCIAS DE FISICA DE SEMICONDUCTORES Y DIELECTRICOS,

072885, NATIONAL TECHNICAL UNIVERSITY, Ucrania , , ENTIDADES EXTERNAS ,

PROPIEDADES DE VIDRIO DE OXIDO DE NIOBIO (DIELECTRIC PROPERTIES OF THE GLASS

BASED ON NIOBIO OXIDE)

IDIOMAS

; Ruso LENGUA MATERNA

; Ucraniano LENGUA MATERNA

08/09/2006 ; Inglés Conversacion: Alto , Lectura: Alto , Escritura: Alto (0)

01/09/2006 ; Español Conversacion: Alto , Lectura: Alto , Escritura: Alto (0)

FORMACION DE RECURSOS HUMANOS

DOCENCIA

02/2016 -

06/2016 ;

Introduccion en Ciencia de Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO

NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE

FISICA Y MATEMATICAS / DEPARTAMENTO DE FISICA, ,MAESTRIA

02/2016 -

06/2016 ;

Laboratorio Fisica II, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL / UNIDADES


DEPARTAMENTO DE FISICA, ,LICENCIATURA

09/2015 -

01/2016 ;

Laboratorio Fisica I, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL / UNIDADES



09/2015 -

01/2016 ;

Introduction en Ciencia de materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO


FISICA Y MATEMATICAS / DEPARTAMENTO DE FISICA, ,MAESTRIA

03/2015 -

07/2015 ;

Introduccion a Ciencia de \Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO


FISICA Y MATEMATICAS, ,MAESTRIA

03/2015 -

07/2015 ;


ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS,

,LICENCIATURA

03/2015 -

07/2015 ;

Introduccion a Fisica del Estado solido, Tiempo en Horas (108) INSTITUTO POLITECNICO

NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL

INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS, ,MAESTRIA

08/2014 -

02/2015 ;




08/2014 -

02/2015 ;



,LICENCIATURA

08/2013 -

12/2013 ;

Introduccion a ciencia materiales, Tiempo en Horas (6) INSTITUTO POLITECNICO NACIONAL /

UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y

MATEMATICAS / DEPARTAMENTO DE FISICA, ,MAESTRIA

08/2013 -

12/2013 ;

Temas selectas de electronica, Tiempo en Horas (4) INSTITUTO POLITECNICO NACIONAL /

UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA

MECANICA Y ELECTRICA (UNIDAD CULHUACAN) / DEPARTAMENTO DE INGENIERIA EN

COMUNICACIONES Y ELECTRONICA, ,DOCTORADO

08/2013 -

12/2013 ;

fisica del estado solido, Tiempo en Horas (6) INSTITUTO POLITECNICO NACIONAL / UNIDADES

ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL INTERDISCIPLINARIA EN

INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS BASICAS, ,DOCTORADO

01/2013 -

06/2013 ;

Fisica del Estado Solido, Tiempo en Horas (6) INSTITUTO POLITECNICO NACIONAL /

UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD PROFESIONAL

INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS, ,DOCTORADO

01/2013 -

06/2013 ;

Introduction en Ciencia Materiales, Tiempo en Horas (6) INSTITUTO POLITECNICO NACIONAL /


MATEMATICAS, ,MAESTRIA

08/2012 -

12/2012 ;



,LICENCIATURA

08/2012 -

12/2012 ;

Introduccion en Ciencia de los materiales, Tiempo en Horas (6) INSTITUTO POLITECNICO



08/2012 -

12/2012 ;

Laboratorio Fisic II, Tiempo en Horas (3) INSTITUTO POLITECNICO NACIONAL / UNIDADES


,LICENCIATURA

01/2012 -

06/2012 ;

Fisica del estado solido, Tiempo en Horas (108) INSTITUTO POLITECNICO NACIONAL /


INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS

BASICAS, ,DOCTORADO

01/2012 -

06/2012 ;




01/2012 -

06/2012 ;

Licenciatura en Fisicamatematicas, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL

/ UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y

MATEMATICAS / DEPARTAMENTO DE FISICA, ,LICENCIATURA

08/2011 -

12/2011 ;




08/2011 -

12/2011 ;

Laboratorio fisica II, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL / UNIDADES



08/2011 -

12/2011 ;

Introduccion a Fisica Estado solido, Tiempo en Horas (108) INSTITUTO POLITECNICO



BASICAS, ,MAESTRIA

08/2011 -

12/2011 ;

Temas selectos de comunicaciones, Tiempo en Horas (81) INSTITUTO POLITECNICO NACIONAL /




01/2011 -

06/2011 ;



DEPTO. DE CIENCIAS DE MATERIALES, ,LICENCIATURA

01/2011 -

06/2011 ;

Temas selectos de electronica, Tiempo en Horas (81) INSTITUTO POLITECNICO NACIONAL /




01/2011 -

06/2011 ;

introduccion a fisica del estado solido, Tiempo en Horas (108) INSTITUTO POLITECNICO


FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA

01/2011 -

06/2011 ;

Laboratorio de Fisica II, Tiempo en Horas (54) INSTITUTO POLITECNICO NACIONAL /


MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,LICENCIATURA

08/2009 -

12/2009 ;

Introducción a Ciencia de Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO



08/2009 -

12/2009 ;

Temas avanzados de Comunicación y Electrónica, Tiempo en Horas (81) INSTITUTO

POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / ESCUELA

SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA (UNIDAD CULHUACAN) /

DEPARTAMENTO DE INGENIERIA EN COMUNICACIONES Y ELECTRONICA, ,DOCTORADO

01/2009 -

06/2009 ;

Introduccion a Ciencia de los Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO



01/2009 -

06/2009 ;

Temas selestos de Electronica, Tiempo en Horas (81) INSTITUTO POLITECNICO NACIONAL /




01/2009 -

06/2009 ;

Temas selectos de Electrónica, Tiempo en Horas (81) INSTITUTO POLITECNICO NACIONAL /




01/2009 -

06/2009 ;

Introduccion a Ciencia de los Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO



08/2008 -

12/2008 ;

Introduccion a Ciencia de Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO



01/2008 -

06/2008 ;

Introduccion a Ciencia de materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO



08/2007 -

12/2007 ;

Curso especial, Tiempo en Horas (108) INSTITUTO POLITECNICO NACIONAL / UNIDADES


INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS BASICAS, ,MAESTRIA

08/2007 -

12/2007 ;




01/2007 -

06/2007 ;




01/2007 -

06/2007 ;

Propiedades opticas de nanocristales de semiconductores, Tiempo en Horas (54) INSTITUTO


SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES,

,DOCTORADO

08/2006 -

12/2006 ;

Materiales y Dispositivoa optoelectronicos, Tiempo en Horas (72) INSTITUTO POLITECNICO


FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,DOCTORADO

08/2006 -

12/2006 ;

Introduccion Ciencia Materiales (6h/s) 1-ro-2006/2007, Tiempo en Horas (108) INSTITUTO



,MAESTRIA

08/2006 -

12/2006 ;

Introduccion a Ciencia Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO NACIONAL


MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA

08/2006 -

12/2006 ;

Materiales y Despositivos optoelectronicos(4h/s) 1-ro 2006/2007, Tiempo en Horas (72) INSTITUTO



,DOCTORADO

01/2006 -

06/2006 ;

Introd. Cienc. Materiales (6h/s) 2-do 2005/2006, Tiempo en Horas (108) INSTITUTO POLITECNICO



01/2006 -

06/2006 ;

Fisica de dispositivos de semiconductores, Tiempo en Horas (72) INSTITUTO POLITECNICO



01/2006 -

06/2006 ;

Fisica despositivos de semiconductores (4h/s) 2-do 2005/2006, Tiempo en Horas (72) INSTITUTO



,DOCTORADO

01/2006 -

06/2006 ;

Seminario investigacion III (2h/s) 2-do 2005/2006, Tiempo en Horas (36) INSTITUTO



,DOCTORADO

01/2006 -

06/2006 ;

Introducccion a Ciencia de Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO



08/2005 -

12/2005 ;

Introd. Ciencia Materiales, Tiempo en Horas (108) INSTITUTO POLITECNICO NACIONAL /


MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,MAESTRIA

08/2005 -

12/2005 ;

Introd. Cienc. Materiales(6h/s) 1-ro-2005/2006, Tiempo en Horas (108) INSTITUTO POLITECNICO



08/2005 -

12/2005 ;

Materiales y Despositivos Optoelectronicos(4h/s) 1-ro 2005/2006, Tiempo en Horas (72) INSTITUTO



,DOCTORADO

08/2005 -

12/2005 ;

Seminario Investigacion II (2h/s) 1-ro 2005/2006, Tiempo en Horas (36) INSTITUTO POLITECNICO



01/2005 -

06/2005 ;

Seminario Investigacion II(2h/s) 2-do 2004/2005, Tiempo en Horas (36) INSTITUTO POLITECNICO



01/2005 -

06/2005 ;

Seminario Investigacion III (2h/s) 2do-2004/2005, Tiempo en Horas (36) INSTITUTO



,DOCTORADO

01/2005 -

06/2005 ;

Seminario Investigacion I (2h/s) 2-do 2004/2005, Tiempo en Horas (36) INSTITUTO POLITECNICO



08/2004 -

12/2004 ;

Materiales y Dispositivos optoeletcronicos(4h/s) 1-ro 2004/2005, Tiempo en Horas (72) INSTITUTO



,DOCTORADO

08/2004 -

12/2005 ;

Fisica de dispositivos semiconductores(4h/s) 1-ro 2004/2005, Tiempo en Horas (72) INSTITUTO



,DOCTORADO

08/2004 -

12/2004 ;

Seminario Investigacion II(2h/s) 1-ro 2004/2005, Tiempo en Horas (36) INSTITUTO POLITECNICO



01/2004 -

06/2004 ;

FISICA del ESTADO SOLIDO (4h/sem) 2do 2003/2004, Tiempo en Horas (72) INSTITUTO



,DOCTORADO

01/2004 -

06/2004 ;

Seminario Investigacion I (2h/s) 2-do 2003/2004, Tiempo en Horas (36) INSTITUTO POLITECNICO



08/2003 -

12/2003 ;

Propiedades opticas y fotoelectricas de solidos (4h/s) 1-ro 2003/2004, Tiempo en Horas (72)



,DOCTORADO

08/2003 -

12/2003 ;

Introd. Cienc. Materiales (6h/s) 1-ro 2003/2004, Tiempo en Horas (108) INSTITUTO POLITECNICO



08/2003 -

12/2003 ;

SOLID STATE PHYSICS (4h/s), Tiempo en Horas (72) INSTITUTO POLITECNICO NACIONAL /


MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, ,DOCTORADO

01/2003 -

06/2004 ;

Introd. Ciencia Materiales (6h/s) 2-do 2003/2004, Tiempo en Horas (108) INSTITUTO



,MAESTRIA

01/2003 -

06/2003 ;

Materiales y Despositivos optoelectronicos (4h/s) 2-d0 2002/2003, Tiempo en Horas (72) INSTITUTO



,DOCTORADO

01/2003 -

06/2003 ;




,MAESTRIA

08/2002 -

12/2003 ;

Seminario investigacion II (2h/s) 1-ro 2002/2003, Tiempo en Horas (36) INSTITUTO POLITECNICO



08/2002 -

12/2002 ;

Seminario Investigacion III (2h/s) 1-ro 2002/2003, Tiempo en Horas (36) INSTITUTO



,DOCTORADO

08/2002 -

12/2002 ;

Introd. Cienc. Materiales(6h/s) 1-ro 2002/2003, Tiempo en Horas (108) INSTITUTO POLITECNICO



01/2002 -

06/2002 ;

Propiedades opticos y fotoelectricos(4h/s) 2-do-2001/2002, Tiempo en Horas (72) INSTITUTO



,DOCTORADO

01/2002 -

06/2002 ;

Seminario investigacion I (2h/s) 2-do 2001/2002, Tiempo en Horas (36) INSTITUTO POLITECNICO



01/2002 -

06/2002 ;

Seminario Departamental I (2h/s) 2-do 2001/2002, Tiempo en Horas (36) INSTITUTO



,DOCTORADO

01/2002 -

06/2002 ;

Seminario investigacion II (2h/s) 2-do 2001/2002, Tiempo en Horas (36) INSTITUTO POLITECNICO



08/2001 -

12/2001 ;

Introd.Ciencia Materiales (6h/s) 1-ro 2001/2002, Tiempo en Horas (108) INSTITUTO



,MAESTRIA

01/2001 -

06/2001 ; DESPOSITIVOS SEMICONDUCTORES OPTOELECTRONICAS PARA COMUNICACIONES

Por FIBRA OPTICA(3h/s) 2-do 2000/2, Tiempo en Horas (72) INSTITUTO POLITECNICO



01/2001 -

06/2001 ; ALTA EFICIENCIA Y RESISTENCIA A LA RADIACION DE CELDAS SOLARES PARA

APLICACIONES TERRESTRES Y ESPACI, Tiempo en Horas (72) INSTITUTO POLITECNICO



08/2000 -

12/2000 ;

Introduccion. Ciencia Materiales (6h/s) 1-ro 2000/2001, Tiempo en Horas (108) INSTITUTO



,MAESTRIA

01/2000 -

06/2000 ;




,MAESTRIA

09/1998 -

01/1999 ;

SOLID STATE PHYSICS (6h/s) 1-ro 1998/1999, Tiempo en Horas (108) ACADEMICA NACIONAL

DE CIENCIAS DE UCRANIA, ,DOCTORADO

02/1998 -

06/1998 ;



09/1997 -

01/1998 ;



09/1997 -

01/1998 ;



02/1997 -

04/1997 ;

SOLID STATE PHYSICS (6h/s) 2-do 1996/1997, Tiempo en Horas (108) ACADEMICA NACIONAL


09/1996 -

01/1997 ;



02/1996 -

06/1996 ;

Solis State Physics (6 hours) 2-d 1995/1996, Tiempo en Horas (108) ACADEMICA NACIONAL DE

CIENCIAS DE UCRANIA, ,

09/1995 -

01/1996 ;



02/1995 -

06/1995 ;

PHYSICS OF SEMICONDUCTORS (6h/s) 2-do-1994/1995, Tiempo en Horas (108) ACADEMICA

NACIONAL DE CIENCIAS DE UCRANIA, ,MAESTRIA

09/1994 -

01/1995 ;

PHYSICS OF SEMICONDUCTORS (6h/s) 1-ro-1994/1995, Tiempo en Horas (108) ACADEMICA


02/1994 -

06/1994 ;

PHYSICS OF SEMICONDUCTORS (6h/s) 2-do-1993/1994, Tiempo en Horas (108) ACADEMICA


09/1993 -

01/1994 ;



02/1993 -

06/1993 ;



02/1993 -

06/1993 ;

ALTERNATIVE SOURCES OF ELECTRISITY, Tiempo en Horas (108) ACADEMICA

NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO

09/1992 -

01/1993 ;



02/1992 -

06/1992 ;



09/1991 -

01/1992 ;



02/1991 -

06/1991 ;

PHOTOELECTRONICS MATERIALS(6h/s) 2-do 1990/1991, Tiempo en Horas (108)

ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO

09/1990 -

01/1991 ;

PHOTOELECTRONICS MATERIALS(6h/s) 1-ro 1990/1991, Tiempo en Horas (108) ACADEMICA


02/1990 -

06/1990 ;



09/1989 -

01/1990 ;

ALTERNATIVE PHOTOELECTRICAL SOURCES FOR ELECTRISITY, Tiempo en Horas (108)


09/1989 -

01/1990 ;



02/1989 -

06/1989 ;



09/1988 -

01/1989 ;



02/1988 -

06/1988 ;

Fisica de semiconductores 2do- 1987/1988, Tiempo en Horas (108) ACADEMICA NACIONAL DE

CIENCIAS DE UCRANIA, ,DOCTORADO

01/1988 -

06/1988 ;

Fisica de despositivos de semiconductores 2do- 1987/1988, Tiempo en Horas (108) ACADEMICA


09/1987 -

01/1988 ;

Fisica de despositivos de semiconductores 1ro- 1987/1988, Tiempo en Horas (108) ACADEMICA


09/1987 -

01/1988 ;

Fisica de semiconductores 1ro- 1987/1988, Tiempo en Horas (108) ACADEMICA NACIONAL DE


02/1987 -

06/1987 ;

Fisica despoitivos de semiconductores 2do- 1986/1987, Tiempo en Horas (108) ACADEMICA


09/1986 -

01/1987 ;

OPTOELECTRONICS MATERIALS AND ITS APPLICATION FOR ENERGY PRODUCTION,

Tiempo en Horas (108) ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, ,DOCTORADO

09/1986 -

01/1987 ;



09/1986 -

01/1987 ;

Fisica despositivos e semiconductores 1ro- 1986/1987, Tiempo en Horas (108) ACADEMICA


02/1986 -

06/1987 ;



02/1986 -

06/1986 ;



02/1986 -

06/1986 ;

Fisica despositivos de semiconductores 2do- 1985/1986, Tiempo en Horas (108) ACADEMICA


09/1985 -

01/1986 ;



09/1985 -

01/1986 ;

Fisica despositivos de semiconductores 1ro- 1985/1986, Tiempo en Horas (108) ACADEMICA


02/1985 -

06/1985 ;



09/1984 -

01/1985 ;



02/1984 -

06/1984 ;



09/1983 -

01/1984 ;



02/1983 -

06/1983 ;



09/1982 -

01/1983 ;



02/1982 -

06/1982 ;



09/1981 -

01/1982 ;


CIENCIAS DE UCRANIA, ,

02/1981 -

06/1981 ;



09/1980 -

01/1981 ;



09/1980 -

01/1981 ;

PHYSICS OF SEMICONDUCTOR DEVICES, Tiempo en Horas (108) ACADEMICA NACIONAL


09/1980 -

01/1981 ;

Fisica clasica I, Tiempo en Horas (108) ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA,

,LICENCIATURA

02/1980 -

06/1980 ;

Fisica de semiconductores 2do - 1979/1980, Tiempo en Horas (108) ACADEMICA NACIONAL DE


02/1980 -

06/1980 ;

Fisica clasica II, Tiempo en Horas (72) ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA,

,MAESTRIA

09/1979 -

01/1980 ;

Physics of Semiconductors 1- 1979/1980, Tiempo en Horas (108) ACADEMICA NACIONAL DE


TESIS DIRIGIDAS

; Caracterizacion optica y estructural de Nanocumulos embebidos en matrices amorfas, INSTITUTO

POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR / UNIDAD

PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS,

DOCTORADO, Brenda Carolina Perez Millan México ,

; Preparacion, bioconjugacion e investigación óptica de puntos cuanticos de CdSe-ZnS nucleo-corazo

con anticuerpos, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL

SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA (UNIDAD

CULHUACAN) / DEPARTAMENTO DE INGENIERIA EN COMUNICACIONES Y

ELECTRONICA, DOCTORADO, Ana Lilia Quintos Vazquez, México ,

; Sintesis d Nanoalambres de Oxido de Zinc en sustratos de Carburo de Silicio poroso, INSTITUTO



DOCTORADO, Isis Chetzyl Ballardo Rodrigue México ,

11/01/2006 ; MECANISMAS de FOTOLUMINESCENCIA Y SU EXCITACION EN ESTRUCTURAS DE Si

de BAJA DIMENCIONALIDAD (alambres y puntos cuanticos), INSTITUTO POLITECNICO


FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES, DOCTORADO,

FRANCISCO GUILLERMO BECERRIL E México ,

; Investigacion optica de puntos cuanticos de nucleo coraza CdSe/ZnS y CdSeTe/ZnS bioconjugados

con anticuerpos de virus de papilloma humana¿, INSTITUTO POLITECNICO NACIONAL /


INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS, DOCTORADO,

Jaramillo Gomez Juan Antonio México ,

16/11/2015 ; Investigacion optica de puntos cuanticos de nucleo coraza CdSe/ZnS y CdSeTe/ZnS bioconjugados

con anticuerpos de virus de papilloma humano, INSTITUTO POLITECNICO NACIONAL /



BASICAS, DOCTORADO, Juan Antonio Jaramillo Gomez México ,

14/05/2015 ; Caracterizacion óptica y estructural de nanocristales de silicio embebidas en dos matrices: nitruro

de silicio y oxido de aluminio, INSTITUTO POLITECNICO NACIONAL / UNIDADES


INGENIERIA Y TECNOLOGIAS AVANZADAS, DOCTORADO, Erasto Vergara Hernandez México

,

13/05/2015 ; Caracterizacion óptica y estructural de nanocristales de silicio embebidas en dos matrices: nitruro

de silicio y oxido de aluminio, INSTITUTO POLITECNICO NACIONAL / UNIDADES


INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS BASICAS, DOCTORADO, Erasto

Vergara Hernandez México ,

27/03/2015 ; Propiedades ópticas y estructurales de pozos cuánticos de GaAs/AlGaAs/InGaAs con puntos

cuánticos de InAs embebidos, en dependencia de la composición de la capa de recubrimiento¿.,


ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA (UNIDAD CULHUACAN) /

DEPARTAMENTO DE INGENIERIA EN COMUNICACIONES Y ELECTRONICA, DOCTORADO,

. Ingri Jasmin Guerrero Moreno México ,

13/05/2015 ; Propiedades ópticas y estructurales de pozos cuánticos de GaAs/AlGaAs/InGaAs con puntos

cuánticos de InAs embebidos, en dependencia de la composición de la capa de recubrimiento,


ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA (UNIDAD

AZCAPOTZALCO), DOCTORADO, Ingri Jasmin Gerrero Moreno México ,

13/11/2013 ; Estudio de la propiedades opticas y estructurales de nanoparticulas de Oxido de Zinc, INSTITUTO



DOCTORADO, Brahim EL Filali México ,

17/01/2014 ; Comparacion de los Parametros Opticos y Estructuralles en Pozos Cuanticos InxGa1-xAs/GaAs

con Puntos Cuanticos InAs Embebidos, INSTITUTO POLITECNICO NACIONAL / UNIDADES

ACADEMICAS DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA MECANICA Y

ELECTRICA (UNIDAD CULHUACAN), DOCTORADO, . Leonardo Gabriel Vega Macote México ,

20/06/2013 ; Variación de la emisión de puntos cuánticos de InAs sometidos a tratamiento térmico, INSTITUTO


PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS AVANZADAS /

CIENCIAS BASICAS, MAESTRIA, Leonardo David Cruz Diosdado México ,

14/01/2013 ; ¿Investigacion de variación de propiedades ópticas de puntos cuánticos de nucleo/coraza CdSe/ZnS

en procesos de bioconjugacion¿,, INSTITUTO POLITECNICO NACIONAL / SECRETARIA DE

INVESTIGACION Y POSGRADO, MAESTRIA, Isis Chetzyl Ballardo Rodrigue México ,

11/01/2010 ; ¿Caracterizacion y Estudio de Nanocristales de Carburo de Silicio Poroso, UNIVERSIDAD

AUTONOMA METROPOLITANA / UNIDAD AZCAPOTZALCO / DIVISION DE CIENCIAS

BASICAS E INGENIERIA (CBI), DOCTORADO, Miguel Morales Rodriguez México ,

12/12/2011 ; Investigacion por me6todos optica i EPR de pozos de SiC porosos, UNIVERSIDAD AUTONOMA

METROPOLITANA / UNIDAD AZCAPOTZALCO / DIVISION DE CIENCIAS BASICAS E

INGENIERIA (CBI), DOCTORADO, Miguel Morales Rodriguez México ,

08/06/2012 ; Investigacion de propiedades ópticas y estructurales de pozos cuánticos con puntos cuánticos del

grupo III y V., INSTITUTO POLITECNICO NACIONAL / SECRETARIA DE INVESTIGACION Y

POSGRADO, MAESTRIA, Cisneros Tamayo Ricardo México ,

20/01/2012 ; Estudio de parametros opticos de puntos cuanticos de InAs embebidos en pozos cuanticos

multiples, en dependencia de la composion de la capa de recubrimento, INSTITUTO



CIENCIAS BASICAS, MAESTRIA, Miguel Ojeda Martinez México ,

19/01/2012 ; Correlacion de la emission de luz y características de difracción de rayos X en pozos cuánticos con

puntos cuánticos embebidos, INSTITUTO POLITECNICO NACIONAL / UNIDADES


DEPARTAMENTO DE FISICA, MAESTRIA, Roberto Luis Mascorro Alquicir México ,

13/01/2012 ; Propiedades opticas de puntos cuanticos de CdSe/ZnS conjugados con biomoleculas, INSTITUTO



CIENCIAS BASICAS, MAESTRIA, Oscar Saul Lopez de la Luz México ,

15/03/2011 ; Estimacion de energia de esfuerzos elasticos en multipozos cuanticos de semiconductores

embebidos con differentes densidades de puntos cuanticos, INSTITUTO POLITECNICO



BASICAS, MAESTRIA, Ingri Jazmin Guerrero Moreno, México ,

11/03/2011 ; Variacion y no homogeneidad de la fotoluminescencia en puntos cuanticos de InAs embebidos en

pozos cuanticos de InGaAs, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS

DE NIVEL SUPERIOR / UNIDAD PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y

TECNOLOGIAS AVANZADAS / CIENCIAS BASICAS, MAESTRIA, Ingri Jasmin Moreno Gerrero

México ,

12/03/2010 ; Espectroscopia de emisión de estados de interface en puntos cuánticos de CdSe/ZnS y su variación

con el proceso de bioconjugacion,, INSTITUTO POLITECNICO NACIONAL / UNIDADES


INGENIERIA Y TECNOLOGIAS AVANZADAS / CIENCIAS BASICAS, MAESTRIA, Leonardo

Gabriel Vega Macotela México ,

12/03/2010 ; Investigacion optica de puntos cuanticos de CdSe/ZnS bioconjugados con biomolecules,


UNIDAD PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y TECNOLOGIAS

AVANZADAS / CIENCIAS BASICAS, MAESTRIA, Leonardo Gabriel Vega Macotela México ,

09/12/2009 ; Comparación de parámetros de dispositivos ¿ diodos p-i-n de deferentes materiales para

aplicaciones en antenas de arreglos de fase y sistemas radares,, INSTITUTO POLITECNICO



BASICAS, MAESTRIA, Luis Alejandro Iturri Honojosa México ,

09/12/2009 ; Comparación de los parametros de dispositivos - diodos p-i-n de diferentes materiales con sistemas

micro-electro-mecánicos para aplicaciones en antenas de arreglos de fase y sistemas radares",



AVANZADAS / CIENCIAS BASICAS, MAESTRIA, Alejandro Iturri Hinojosa México ,

17/12/2008 ; Estudio de Emision de Luz y Difraccion de Rayos X de nanocristales de Carburo de Silicio,,



AVANZADAS / CIENCIAS BASICAS, MAESTRIA, Jorge Yescas Hernandez México ,

17/12/2008 ; Estudio de Emision de Luz y Difraccion de Rayos X de nanocristales de Carburo de Silicio,



AVANZADAS / CIENCIAS BASICAS, MAESTRIA, Jorge Arturo Yescas Hernandez México ,

23/05/2008 ; Investigacion de las propiedades opticas de nanocristales de Ge y Si embebidos en diferentes

matrices, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL

SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE

MATERIALES, DOCTORADO, Alexandro Vivas Hernandez México ,

15/02/2008 ; Propiedades opticas y estructurales de NC-Si embebidos en Silicio amorfo, INSTITUTO



MAESTRIA, Anna Lilia Quintas Vazquez México ,

21/02/2008 ; Caracterizacion optica y estructural de peliculas nanocristalinas de carburo de silicio, INSTITUTO



DOCTORADO, Aaron Israel Diaz Cano México ,

05/06/2007 ; Investigacion de las caracteristicas opticas de estructuras con puntos cuanticos de InAs embebidas

en pozos cuanticos de InGaAs/GaAS para laseres de nueva generacion para fibra optica,


ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA (UNIDAD CULHUACAN) /

DEPARTAMENTO DE INGENIERIA EN COMUNICACIONES Y ELECTRONICA, DOCTORADO,

Erik Velazquez Losada México ,

22/02/2007 ; Propiedades opticas de puntos cuanticos de InAs embebidos en pozos cuanticos de InGaAs/GaAs

con diferente contenido de In., INSTITUTO POLITECNICO NACIONAL / UNIDADES


DEPTO. DE CIENCIAS DE MATERIALES, DOCTORADO, JOSE LUIS CASAS ESPINOLA México

,

03/03/2005 ; ESPECTROSCOPIA de ESTADOS MULTI EXCITADOS de PUNTOS CUANTICOS de InAs

EMBEBIDOS EN POZOS InGaAs, INSTITUTO POLITECNICO NACIONAL / UNIDADES


DEPTO. DE CIENCIAS DE MATERIALES, MAESTRIA, Hilda MARGARITA ALFARO LOPEZ

México ,

02/04/2003 ; INVESTIGACION COMPARATIVA DE LA FOTOLUMINISCENCIA Y SU EXCITACION EN

ESTRUCTURAS DE NANOALAMBRES DE SI Y PELICULAS de SiOx ENRIQUECIDAS CON

SI, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL SUPERIOR /


MAESTRIA, AARON ISRAEL DIAZ CANO México ,

13/03/2003 ; DEPENDENCIA DE LA FOTOLUMINISCENCIA EN NANO ALAMBRES DE SILICIO

POROSO EN FUNCION DE LA MORFOLOGIA SUPERFICIAL Y LA COMPOSICION DE

OXIDO DE SILICIO, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE

NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE

CIENCIAS DE MATERIALES, MAESTRIA, MIGUEL MORALES RODRIGUEZ México ,

23/10/2002 ; DISENO Y INVESTIGACION DE CELDAS SOLARES PARA LAS COMUNICACIONES

SATELITALES, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE

NIVEL SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA

(UNIDAD ZACATENCO) / DEPARTAMENTO DE INGENIERIA DE TELECOMUNICACIONES,

MAESTRIA, ALEJANDRO VIVAS HERNANDEZ México ,

23/10/2002 ; INVESTIGACION DE LAS PROPIEDADES ELECTRICAS Y OPTICAS DE LOS SISTEMAS

SEMICONDUCTORES DE BAJA DIMENCION PARA APLICACION EN COMUNICACIONES

POR FIBRA OPTICA, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE

NIVEL SUPERIOR / ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA

(UNIDAD ZACATENCO) / DEPARTAMENTO DE INGENIERIA DE TELECOMUNICACIONES,

MAESTRIA, ERICK VELAZQUEZ LOZADA México ,

17/11/2000 ; NATURALEZA DE LA BANDA ROJA DE FOTOLUMINISCENCIA EN EL SILICIO POROSO,



MAESTRIA, FRANCISCO GUILLERMO BECERRIL E México ,

27/09/1999 ; ROLE OF SURFACE IN EXCITATION PROCESS OF POROUS SILICON

PHOTOLUMINESCENCE, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA /

INSTITUTO DE FISICA DE MATERIA CONDENSADA, DOCTORADO, KHOMENKOVA Larisa

Ucrania ,

27/02/1998 ; Nanocrystaline structure development and photoluminescence investigation, ACADEMICA

NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO, JUMAEV Berdishykyr Ucrania ,

26/02/1997 ; RADIATION STIMULATED VARIATION OF IV CHARACTERISTICS OF IMPATT DIOD,

NATIONAL TECHNICAL UNIVERSITY, MAESTRIA, TAGAEV M.B. Ucrania ,

24/05/1996 ; Investigation of the deep centers in double AlGaAs heterostructures doping by amphoteric

impurities, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO,

GNATENKO Vitaliy Ucrania ,

24/02/1995 ; X-ray photoelectronic emission studies of porous silicon surface, NATIONAL TECHNICAL

UNIVERSITY, MAESTRIA, Sergey O. Antonov Ucrania ,

24/02/1995 ; SIMS STUDIES OF POROUS SILICON SURFACE, NATIONAL TECHNICAL UNIVERSITY,

MAESTRIA, Alexandr. L. Kapitanchuk Ucrania ,

16/06/1993 ; Excitation mechanism of porous silicon photoluminescence, NATIONAL TECHNICAL

UNIVERSITY, MAESTRIA, HOMENKOVA L. I. Ucrania ,

22/02/1993 ; DEEP CENTER INVESTIGATION IN MOCVD INGAAS LAYERS, NATIONAL TECHNICAL

UNIVERSITY, MAESTRIA, V.I.KOOSHNIRENKO Ucrania ,

11/06/1992 ; NONEQULIBRIUM EMISSION OF SEMICONDUCTORS AT THE EXCLUSION OF FREE

CHARGE CURRIES, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO,

RUBAK Alexandro Ucrania ,

20/02/1992 ; AlGaAs/GaAs solar cell parameters investigation, NATIONAL TECHNICAL UNIVERSITY,

MAESTRIA, Alexsey. I. Taftai Ucrania ,

18/02/1992 ; Processes of defect transformation at AlGaAs LED degradation, ACADEMICA NACIONAL DE

CIENCIAS DE UCRANIA, DOCTORADO, Dzhamal Abdulaev Ucrania ,

16/03/1990 ; Investigation of electrophysical characteristics of injection AlGaAs heterolasers with different

doping levels in active layer, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA,

DOCTORADO, PUZIN I. Ucrania ,

23/02/1990 ; Deep center investigation in AlGaAs double heterostructures, NATIONAL TECHNICAL

UNIVERSITY, MAESTRIA, GNATENKO V.I. Ucrania ,

24/02/1989 ; Injection-enhanced transformation of AlGaAs LED emission, NATIONAL TECHNICAL

UNIVERSITY, MAESTRIA, FILIPCHENKO V.YA Ucrania ,

13/01/1989 ; Development of LPE double heterostructure technology for AlGaAs lasers, ACADEMICA

NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO, ZARECHNEV Alexandro Ucrania ,

20/02/1987 ; Deep center in AlGaAs LED¿s estimated by injection spectroscope methods, NATIONAL

TECHNICAL UNIVERSITY, MAESTRIA, GUSEV M.I. Ucrania ,

21/02/1986 ; Deep center transformation in Yellow GaP LED¿s, NATIONAL TECHNICAL UNIVERSITY,

MAESTRIA, STROCHKOV V.I. Ucrania ,

13/09/1985 ; Degradation and radiation-enhanced processes in light-emitting diodes, ACADEMICA NACIONAL

DE CIENCIAS DE UCRANIA, DOCTORADO, BERDINSKIKH T.G. Ucrania ,

15/03/1985 ; Investigation of aging and degradation mechanism of Cu2S-CdS solar cells, ACADEMICA

NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO, MIRZAZHANOV M.G. Ucrania ,

21/02/1985 ; ULTRASOUND TREATMENT OF LEDS BASED ON III V MATERIALS, NATIONAL

TECHNICAL UNIVERSITY, MAESTRIA, KORCHNAYA V.L. Ucrania ,

20/04/1984 ; TECHNOLOGY DEVELOPMENT OF ADVANCED CDSCUCL THIN FILM

PHOTORESISTORS AND MECHANISMS OF THEIR DEGRADATION, ACADEMICA

NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO, RAKHLIN M.YA. Ucrania ,

14/10/1983 ; MECHANISM OF AGING AND PHOTOCHEMICAL REACTIONS IN CDSCU

PHOTORESISTORS, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO,

BAIDOKHA L. Ucrania ,

14/06/1983 ; DEEP CENTER INVESTIGATION IN RED GAP LEDS, NATIONAL TECHNICAL

UNIVERSITY, MAESTRIA, SHMATOV A.A. Ucrania ,

25/02/1983 ; SMALL RADIATION DOSE EFFECTS IN SILICON HFDIODES, NATIONAL TECHNICAL

UNIVERSITY, MAESTRIA, DENISYUK V.I. Ucrania ,

22/02/1982 ; PROCESSES IN THE BASE OF DEGRADATION OF GAP LIGHTEMITTING DIODES,

ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, DOCTORADO, KARABOEV

Abdukhalik Ucrania ,

19/02/1982 ; Investigation of the EL instability of GaP LED¿s, NATIONAL TECHNICAL UNIVERSITY,

MAESTRIA, BERDINSKIKH T.G. Ucrania ,

25/06/1991 ; PHOTOENHANCED PROCESSES AND CENTER INTERACTION IN ZNSE SINGLE

CRYSTALS, NATIONAL TECHNICAL UNIVERSITY, MAESTRIA, KRIVKO T.G Ucrania ,

20/02/1981 ; High frequency noise investigation in Si diodes, NATIONAL TECHNICAL UNIVERSITY,

MAESTRIA, LOSHIZKIY P.P. Ucrania ,

18/02/1981 ; PHOTODEGRADATION OF THE CDS CU CL CONGLOMERATED LAYER

PHOTORESISTORS, NATIONAL TECHNICAL UNIVERSITY, MAESTRIA, SYPKO S.A.

Ucrania ,

23/03/1979 ; STUDDING OF PHOTOELECTRIC PROPERTIES OF CDS CU CL THIN FILM

PHOTORESISTORS, NATIONAL TECHNICAL UNIVERSITY, MAESTRIA, BAIDOKHA L.N.

Ucrania ,

16/02/1979 ; Development of CdS:Cu:Cl thin film photoresistor technology, NATIONAL TECHNICAL

UNIVERSITY, MAESTRIA, RAKHLIN M. Ucrania ,

22/02/1977 ; INVESTIGATION OF THE BULK CHARGE FORMATION IN NBO DIELECTRIC FILMS,

NATIONAL TECHNICAL UNIVERSITY, MAESTRIA, ZAKHAREVICH E.G. Ucrania ,

INVESTIGACION CIENTIFICA Y TECNOLOGICA

ESTANCIAS DE

INVESTIGACION

02/2014 -

07/2014 ; ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA / INSTITUTO DE FISICA DE

MATERIA CONDENSADA, ENTIDADES EXTERNAS , Nanociencia, Ucrania

05/2010 -

10/2010 ; ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA / INSTITUTO DE FISICA DE

MATERIA CONDENSADA, ENTIDADES EXTERNAS , MODIFICACION DE LOS

ESPECTROS DE FOTOLUMINESCENCIA DE PUNTOS CUANTICOS BIOCONJUGADOS

CON ANTICUERPOS, Ucrania

06/2006 -

07/2006 ;

ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, ENTIDADES EXTERNAS , Exciton

dynamics in InAs quantum dot laser structures, Ucrania

09/2005 -

09/2005 ;

UNIVERSITY OF SOUTH FLORIDA, ENTIDADES EXTERNAS , Ultrasound investigation of

porous SiC, Estados Unidos

09/2005 -

09/2005 ;

ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA, ENTIDADES EXTERNAS , PL

excitation of porous SiC, Ucrania

06/2005 -

07/2005 ;

ACADEMIA DE CIENCIAS DE MOSCU, ENTIDADES EXTERNAS , Structural investigation of

porous SiC, Federación Rusia

11/2004 -

12/2004 ;

TECHNION-ISRAEL INSTITUTE OF TECNOLOGY, ENTIDADES EXTERNAS , STM

investigation of Si quantum dots, Israel

08/2004 -

08/2004 ;

UNIVERSITY OF SOUTH FLORIDA, ENTIDADES EXTERNAS , Exciton emission scanning

spectroscopy, Estados Unidos

11/2003 -

12/2003 ;

UNIVERSITY OF SOUTH FLORIDA, ENTIDADES EXTERNAS , InAs quantum dor structures

scanning spectroscopy, Estados Unidos

01/2003 -

01/2003 ;

UNIVERSITY OF NEW MEXICO, ENTIDADES EXTERNAS , QD laser structures of new

generation, Estados Unidos

10/2002 -

10/2002 ;

UNIVERSIDAD DE GUADALAJARA / CENTRO UNIVERSITARIO DEL SUR., INST. DE EDU.

SUP. PUBLICAS , Curso de lectures "New directions in optoelectronics", México

03/2002 -

03/2002 ;

TECHNION-ISRAEL INSTITUTE OF TECNOLOGY, ENTIDADES EXTERNAS , Si and Ge

quantum dots production, Israel

08/2001 -

08/2001 ;

ACADEMIA ESLOVACA, ENTIDADES EXTERNAS , Porous II-V layer production and

investigation, República Checa

11/2000 -

12/2000 ;

TECHNION-ISRAEL INSTITUTE OF TECNOLOGY, ENTIDADES EXTERNAS , Si rich silicon

oxide, Israel

10/2000 -

10/2000 ;

UNIVERSITY OF NEW MEXICO, ENTIDADES EXTERNAS , InAs quantum dot laser structures,

Estados Unidos

09/1998 -

10/1998 ; , , Porous Si surface investigation, Polonia

11/1997 -

12/1997 ;

INSTITUTO DE CIENCIAS WEIZMANN, ENTIDADES EXTERNAS , Electoluminescence of

porous Si, Israel

10/1995 -

10/1995 ; , , LES and laser degradation, República Corea

02/1995 -

03/1995 ;

UNIVERSITÉ PARIS-DIDEROT PARIS 7, ENTIDADES EXTERNAS , LED degradation

mechanisms, Francia

06/1994 -

07/1994 ; , , Deep-level defects in MOCVD InxGa1-xAs layers, Polonia

04/1994 -

04/1994 ; , , Mechanisms of LED degradation, Estados Unidos

01/1993 -

02/1993 ; AT&T BELL LABORATORIES, ENTIDADES EXTERNAS , InGaAsP laser degradation, Canadá

10/1991 -

12/1991 ; , , LED and laser degradation mechanisms, Italia

03/1990 -

04/1990 ; , , Photosensitivity improvement of II-VI photoresistors and solar cells, Bulgaria

05/1989 -

06/1989 ; , , LED degradation mechanisms, República Checa

05/1980 -

06/1980 ;

ACADEMIA DE CIENCIAS DE MOSCU, ENTIDADES EXTERNAS , RARE ATOMS AS

GETTER IN II-VI MATERIALS, Bulgaria

PROYECTOS DE

INVESTIGACIÓN

02/2014 -

07/2014 ;

Proyecto de Investigación , CONACYT N000207604 ¿INVESTIGACIÓN LOS POZOS CUÁNTICOS

DE INXGAYAS/ALX GAYAS/GAAS CON PUNTOS CUÁNTICOS INAS EMBEBIDOS USO

MÉTODOS ÓPTICOS Y DIFRACCIÓN DE RAYOS X DE ALTA RESOLUCIÓN (HR-XRD)¿,


ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPARTAMENTO DE FISICA

Empresas Participantes : INST FÍSICA DE SEMICONDUCTORES LA ACADEMIA UCRANIA

Investigadores Participantes : DRA. LYUDMILA SHCHERBYNA

Becarios Participantes : LEONARDO GABRIEL VEGA MACOTELA , RICARDO CISNEROS

TAMAYO , INGRI JASMIN GUERRERO MORENO

01/2013 -

12/2013 ;

Proyecto de Investigación , PROYECTO SIP 20130454¿INVESTIGACIÓN DE LOS FENÓMENOS

ÓPTICOS EN PUNTOS CUÁNTICOS DE LOS GRUPOS III-V Y II-VI EN FUNCIÓN DE LOS

FACTORES BIOFÍSICOS¿, INSTITUTO POLITECNICO NACIONAL / SECRETARIA DE

INVESTIGACION Y POSGRADO

Investigadores Participantes : DRA. TETYANA TORCHYNSKA

01/2012 -

12/2012 ;

Proyecto de Investigación , PROYECTO SIP 20120083 ¿INVESTIGACIÓN DE LOS FENÓMENOS

ÓPTICOS EN PUNTOS CUÁNTICOS DE LOS GRUPOS III-V Y II-VI EN FUNCIÓN DE LOS

FACTORES BIOFÍSICOS¿, INSTITUTO POLITECNICO NACIONAL / SECRETARIA DE

INVESTIGACION Y POSGRADO

Investigadores Participantes : DRA. TETYANA TORCHYNSKA

04/2011 -

03/2014 ;

Proyecto de Investigación , CONACYT 000000000130387 "PROPIEDADES OPTICOS DE LOS

PUNTOS CUANTICOS DE SEMICONDUCTORES DE GRUPOS III-V Y II-VI Y IMPACTO DEL

ESTRES ELASTICO A PUNTOS CUANTICOS EMBEBIDOS EN POZOS CUANTICOS",


ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES

Investigadores Participantes : DR. JOSE LUIS CASAS ESPINOLA , DR.AARON ISRAEL DIAZ

CANO , DR.E. VELAZQUEZ LOZADA , DR.A. VIVAS HERNANDEZ , DRA. JANNA DOUDA

01/2011 -

12/2011 ;

Proyecto de Investigación , PROYECTO SIP 20110516 "INVESTIGACIÓN Y SIMULACIÓN

NUMÉRICA DE LA INTERACCIÓN EXCITON-POLARITON EN LAS SISTEMAS

NANOCRISTALINOS DE SIC"., INSTITUTO POLITECNICO NACIONAL / UNIDADES


DEPARTAMENTO DE FISICA

05/2010 -

10/2010 ;

Proyecto de Investigación , CONACYT 000000000131184 "MODIFICACIÓN DE LOS

PROPIEDADES ÓPTICAS DE LOS PUNTOS CUÁNTICOS DE CDSE/ZNS EN PROCESOS DE

BIOCONJUGACION CON ANTICUERPOS ", INSTITUTO POLITECNICO NACIONAL /


MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES

Empresas Participantes : INSTITUTO DE FISCA DE SEMICONDUTORES DE NASU

Investigadores Participantes : DRA TETYANA TORCHYNSKA , DRA. LYUDMYLA

SHCHERBYNA

01/2010 -

12/2010 ;

Proyecto de Investigación , PROYECTO SIP 20100103 ¿TRANSFORMACION DE LAS

PROPIEDADES ÓPTICAS DE PUNTOS CUANTICOS INAS/INGAAS Y CDSE/ZNS EN LOS

PROCESOS DIFERENTES, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS

DE NIVEL SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE

CIENCIAS DE MATERIALES

Investigadores Participantes : T.TORCHYNSKA Becarios Participantes : FRANCISCO BECERRIL ESPINOSA , ALEJANDRO VIVAS

HERNANDEZ , MIGUEL MORALES RODRIGUEZ , AARON ISRAEL DIAZ CANO

01/2009 -

12/2009 ;

Proyecto de Investigación , PROYECTO SIP 20090113 ¿MODIFICACION DE LAS PROPIEDADES

ÓPTICAS DE PUNTOS CUNTICOS CDSE/ZNS EN LOS PROCESOS DE BIOCONJUGACION¿DE

SIC¿, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL


MATERIALES

07/2008 -

12/2011 ;

Proyecto de Investigación , CONACYT 00058358 INVESTIGACION DE LAS PROPIEDADES

OPTICAS EN ESTRUCTURAS CON NANOCRYSTALES Y PUNTOS CUANTICOS DE

SEMICONDUCTORES DEL GRUPO IV Y III-V PARA DISPOSITIVOS DE NUEVA

HENERACION., INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL

SUPERIOR / ESCUELA SUPERIOR DE FISICA Y MATEMATICAS / DEPARTAMENTO DE

FISICA

Investigadores Participantes : DRA. JANNA DOUDA , DRA. TETYANA TORCHYNSKA , DR.

JOSE L UIS CASAS ESPINOLA

01/2008 -

12/2008 ;

Proyecto de Investigación , PROYECTO SIP- IPN N 20080177, "PROPIEDADES OPTICAS Y

ESTRUCTURALES DE LOS NANOCRISTALES DE SIC", INSTITUTO POLITECNICO NACIONAL



Investigadores Participantes : DRA. T. TORCHYNSKA Becarios Participantes : AARON ISRAEL DIAS CANO , YORGE ARTURO YESCAS

HERNANDEZ

07/2007 -

07/2010 ;

Proyecto de Investigación , PROYECTO CONACYT EN PROGRAMA CIENCIA BASICA N 58358,

INVESTIGACION DE LAS PROPIEDADES OPTICAS EN ESTRUCTURAS CON

NANOCRISTALES Y PUNTOS CUANTICOS DE SEMICONDUCTORES DEL GRUPO IV Y III-V

PARA DISPOSITIVOS DE NUEVA GENERACION,, INSTITUTO POLITECNICO NACIONAL /



Empresas Participantes : ESIME-IPN

Investigadores Participantes : DR. ERICK VELAZQUEZ LOZADA , DR. GEORGIY POLUPAN ,

DR. JOSE LUIS CASAS ESPINOLA

Becarios Participantes : M.C. ANNA LILIA QUINTOZ VAZQUEZ , DRA. KIRA

KHMELNITSKAYA , AARON ISRAEL DIAZ CANO , ALEJANDRO VIVAS HERNANDEZ,

01/2007 -

12/2007 ;

Proyecto de Investigación , PROYECTO SIIP- IPN N 20071013 "DEPENDENCIA PROPIEDADES

OPTICOS DE PUNTOS CUNATICOS DE INAS SOBRE LA TEMPERATURA DE CU

CRECIMIENTO EN LAS POZAS QUANTICOS DE INGAAS/GAAS, INSTITUTO POLITECNICO


FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES

Investigadores Participantes : J. LUIS CASAS ESPINOLA , T.TORCHYNSKA

Becarios Participantes : AARON ISRAEL DIAZ CANO , ERIK VELAZQUEZ LOZADA

11/2006 -

12/2009 ;

Proyecto de Investigación , PROYECTO CONACYT MEXICO-UCRANIA, INVESTIGACION DE

FOTOLUMINESCENCIA Y RESONANCIA PARAMAGNETICA EN ESTRUCTURAS DE SIC

POROSO Y NANOCRISTALINOS, INSTITUTO POLITECNICO NACIONAL / UNIDADES


DEPTO. DE CIENCIAS DE MATERIALES

Empresas Participantes : INSTITUTO DE FISICA DE SEMICONDUCTORES DE UCRANIA

Investigadores Participantes : DRA. L. SHCHERBYNA

Becarios Participantes : JORGE YESCAS HERNANDEZ

11/2006 -

11/2009 ;

Proyecto de Investigación , PROYECTO CONACYT MEXICO-ISRAEL, ESTUDIO

CPOMPARATIVO DE EFECTOS CUANTICOS EN NANOCRISTALES SEMICONDUCTORES DE

MATERIALES DEL GRUPO IV Y II-VI, INSTITUTO POLITECNICO NACIONAL / UNIDADES


DEPTO. DE MATEMATICAS

Empresas Participantes : HEBREW UNIVERSITY OF JERUSALEM ISRAEL

Investigadores Participantes : DR. Y. GOLDSTEIN

Becarios Participantes : ALEJANDRO VIVAS HERNANDEZ , ANNA LILIA QUINTOS VAZQUEZ

09/2006 -

09/2009 ;

Proyecto de Investigación , PROYECTO INTERNACIONAL MEXICO, CONACYT-NSF, USA,

ULTRASOUND STIMULATED REACTIONS WITH QUANTUM DOTS FOR LUMINESCENT

BIOMARKERS, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL


MATERIALES

Empresas Participantes : UNIVERSIDAD FLORIDA DEL SUR

Investigadores Participantes : DR. S. OSTAPENKO Becarios Participantes : ANNA LILIA QUINTOS VAZQUEZ

01/2006 -

12/2006 ;

Proyecto de Investigación , PROYECTO SIP- IPN CON N20060164, "PROPIEDADES OPTICAS DE

PUNTOS CUANTICOS DE INAS EMBEBIDAS EN POZOS CUANTICOS DE INGAAS/GAAS CON

DIFERENTE CONTENIDO DE IN, INSTITUTO POLITECNICO NACIONAL / UNIDADES


DEPTO. DE CIENCIAS DE MATERIALES

Investigadores Participantes : T.V.TORCHYNSKA Becarios Participantes : ANNA LILIA QUINTOS VAZQUEZ , AARON ISRAEL DIAZ CANO ,

ERIK VELAZQUEZ LOZADA , JOSE LUIS CASAS ESPINOLA

01/2005 -

12/2005 ;

Proyecto de Investigación , PROYECTO SIP- IPN CON N20050328 "INVESTIGACION DE LAS

PROPIEDADES OPTICAS DE SI EMBEBIDOS EN SILICIO AMORFO", INSTITUTO


SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES

Investigadores Participantes : T. TORCHYNSKA Becarios Participantes : ANNA LILIA QUINTOS VAZQUEZ , AARON ISRAEL DIAZ CANO

01/2004 -

12/2004 ;

Proyecto de Investigación , PROYECTO SIP- IPN CON N 20040404 "INVESTIGACION OPTICA

NO DESTRUCTIVA DE CAPAS DE SIC PARA DISPOSITIVOS OPTOELECTRONICOS",



Investigadores Participantes : T.TORCHYNSKA Becarios Participantes : AARON ISRAEL DIAZ CANO

12/2003 -

06/2006 ;

Proyecto de Investigación , PROYECTO INVESTIGACION EN PROGRAMA CONACYT MEXICO-

NSF, EEUU, N U42436-Y"CHARACTERIZACION ESPACIAL DE POZOS DE SIC

NANOPOROSOS, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE



Empresas Participantes : UNIVERSIDAD FLORIDA SUR TAMPA EEUU

Investigadores Participantes : DR. GEORGIY POLUPAN , DR. S. OSTAPENKO

Becarios Participantes : CEZAR AUGUSTO REAL RAMIRES

01/2003 -

12/2003 ;

Proyecto de Investigación , PROYECTO SIP- IPN CON N 20030320 "INVESTIGACION OPTICA DE

NANOCRISTALES DE SI Y GE EMBEBIDOS EN SIO2", INSTITUTO POLITECNICO NACIONAL



Investigadores Participantes : T.TORCHYNSKA Becarios Participantes : ALEJANDRO VIVAS HERNANDEZ

09/2002 -

09/2005 ;

Proyecto de Investigación , PROYECTO COOPERACION BILATERAL CONACYT MEXICO-NSF,

EEUU, CARACTERIZACION ESPECIAL RESUELTA DE CAPAS NANOPOROSAS DE SIC,



Empresas Participantes : UNIVERSIDAD DE FLORIDA SUR

Investigadores Participantes : DR. SERGEI OSTAPENKO , DR. STEVE SADDOW

01/2002 -

12/2002 ;

Proyecto de Investigación , PROYECTO SIP- IPN CON N 20020926 "{INVESTIGACION DE LA

ESPECTROSCOPIA DE ESTADOS MULTI EXCITADOS EN PUNTOS CUANTICOS DE

SEMICONDUCTORES DEL GRUPO III-V Y SILICIO, INSTITUTO POLITECNICO NACIONAL /



Investigadores Participantes : T.TORCHYNSKA Becarios Participantes : HILDA MARGARITA ALFARO LOPEZ , JOSE LUIS CASAS ESPINOLA

09/2001 -

09/2003 ;

Proyecto de Investigación , CREACION Y INVESTIGACION DE LOS ESTRUCTURAS CON SI

NANORISTALES, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE



Empresas Participantes : HEBREA UNIVERSIDAD DE JERUSALEN ISRAEL

Investigadores Participantes : PROF. YEHUDA GOLDSTEIN

01/2001 -

12/2001 ;

Proyecto de Investigación , PROYECTO SIP- IPN CON N 20010563" EFECTO BALISTICO EN LA

FOTOLUMINESCENCIA ROJA DE ALAMBRES DE SILICIO, INSTITUTO POLITECNICO


FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES

Investigadores Participantes : T. TORCHYNSKA Becarios Participantes : ALEJANDRO VIVAS HERNANDEZ , FRANCISCO BESERRIL

12/2000 -

12/2003 ;

Proyecto de Investigación , PROJECT OF CONACYT EN PROGRAMA CIENCIAS BASICOS N

33427-U ¿ CREACION Y INVESTIGACION ESTRUCTURAS SEMICONDUCTORES BAJO

DOMENSIONALIDAD CON EMISION DE LUZ, INSTITUTO POLITECNICO NACIONAL /



Empresas Participantes : ESIME-IPN

Investigadores Participantes : DR. GEORGIY POLUPAN Becarios Participantes : F.BECERRIL ESPINOZA

09/2000 -

09/2002 ;

Proyecto de Investigación , INVESTIGACION TEORICA Y EXPERIMENTAL PROPIEDADES

OPTPELECTRONICOS DE ESTRUCTURAS INAS-GAAS CON PUNTOS CUANTICOS,



Empresas Participantes : CHTM AT UNIVERSIDAD DE NUEVO MEXICO USA

Investigadores Participantes : PROF. P. ELISEEV

09/2000 -

09/2002 ;

Proyecto de Investigación , TECHNOLOGIA Y INVESTIGACION DE PROPIEDADES OPTICAS

DE SOLICIONES SOLIDOS TERNARIAS INGAP PARA APLICACIONES FOTOELECTRONICAS,



Empresas Participantes : INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS

Investigadores Participantes : DR. DUSHAN NAKHOVICA

09/2000 -

09/2003 ;

Proyecto de Investigación , "INVESTIGACION DE FOTOLUMINESCENCIA Y SU EXCITACION

EN ESTRUCTURAS DE SI BAJO DIMENSIONALIDAD, INSTITUTO POLITECNICO NACIONAL



Empresas Participantes : INSTITUTO FISICA DE SEMICONDUCTORES UCRANIA

Investigadores Participantes : DRA. LYDMULA SHCHERBUNA

Becarios Participantes : FRANCISCO BESERRIL ESPINOZA

01/1999 -

12/1999 ;

Proyecto de Investigación , PROYECTO SIP- IPN CON N 990054 " MECANISMOS DE

FOTOLUMINESCENCIA Y NATURALEZA DE LOS CENTROS DE LUMINESCENCIA EN

SILICIO POROSO, INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE



Investigadores Participantes : T, TORCHYNSKA Becarios Participantes : FRANCISCO BECERRIL ESPINOSA

02/1998 -

12/1999 ;

Proyecto de Investigación , Investigation of the defect formation processes under the electron and high-

frequency wave irradiation in GaAs solar cells for space applications, ACADEMIA DE CIENCIAS DE

MOSCU

Empresas Participantes : INSTITUTE OF MATERIAL SCIENCES OF HUNGARY

Investigadores Participantes : DR. ZHOLT HORVARD

01/1998 -

12/1999 ;

Proyecto de Investigación , Modeling, Creation and Investigation of Silicon quantum structure¿.,

ACADEMIA DE CIENCIAS DE MOSCU

Empresas Participantes : RAKAH INSTITUTO DE FISICA JERUSALEN ISRAEL


01/1997 -

12/1997 ;

Proyecto de Investigación , Analyses of Current status and Studding of problems of semiconductor solar

cells creation for space gelioenergetics in Ukraine and in the World¿, ACADEMIA DE CIENCIAS DE

MOSCU

Empresas Participantes : NATIONAL SPACE AGENCY OF UKRAINE

12/1996 -

12/1998 ;

Proyecto de Investigación , Theoretical Modeling and Development of Technology of high energy

cascade III-V solar cells based on multilayer heterostructures of GaAs and their solid solution,


02/1996 -

12/1998 ;

Proyecto de Investigación , Investigation of silicon nanocrystals photoluminescence and its

applications¿., ACADEMIA DE CIENCIAS DE MOSCU

Empresas Participantes : HEBREW UNIVERSITY OF JERUSALEM ISRAEL


01/1995 -

12/1996 ;

Proyecto de Investigación , ¿Investigation of the mechanism of radiative recombination in porous

silicon - new quantum confinement structures, and studies of the possibility applications for LED new

generation¿, ACADEMIA DE CIENCIAS DE MOSCU

Empresas Participantes : NATIONAL TECHNICAL UNIVERSITY OF UKRAINE

Investigadores Participantes : DR. A. SHMUREVA

01/1995 -

12/1996 ;

Proyecto de Investigación , Investigation of elementary processes of thermal and stimulated diffusion of

atoms and defects transformation and their reactions in semiconductors, ACADEMIA DE CIENCIAS

DE MOSCU

Empresas Participantes : INTERNATIONAL SCIENCE FAUNDATION USA

01/1995 -

12/1997 ;

Proyecto de Investigación , Development technology and creation of high energy and radiation proved

solar cells based on III-V materials for photoelectric batteries of space applications¿., ACADEMIA DE

CIENCIAS DE MOSCU


02/1994 -

12/1995 ;

Proyecto de Investigación , Defects and defect-related recombination processes in semiconductors¿.,


Empresas Participantes : INSTITUTO OF PHYSICS POLISH ACADEMY OF SCIENCE

Investigadores Participantes : PROF. MAREK GODLEVSKII

01/1994 -

12/1995 ;

Proyecto de Investigación , Development of technology of multiplayer bright AlGaAs/GaAs light-

emitting heterostructures and creation of LED and lasers on their base, ACADEMIA DE CIENCIAS DE

MOSCU

Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE KARAT

Investigadores Participantes : DR. D. KORBUTYAK

01/1993 -

12/1994 ;

Proyecto de Investigación , Development of the physic-technological base for creation of new material

and semiconductor structures for optoelectronic devices of new generation, ACADEMIA DE CIENCIAS

DE MOSCU


01/1993 -

12/1993 ;

Proyecto de Investigación , Ukrainian - Canadian Industrial Co-operation project, ACADEMIA DE

CIENCIAS DE MOSCU

Empresas Participantes : BELL NOTHERN RESEARCH OTTAVA CANADA

Investigadores Participantes : DR. CARLA MINER

03/1992 -

12/1992 ;

Proyecto de Investigación , National State Space Program Analysis, ACADEMIA DE CIENCIAS DE

MOSCU


01/1992 -

01/1994 ;

Proyecto de Investigación , Porous silicon research by Auger, SIMS, FTIR and X-ray photoemission

methods¿, ACADEMIA DE CIENCIAS DE MOSCU

02/1990 -

12/1995 ;

Proyecto de Investigación , Development of the effective photodiodes and solar cells ob the base III-V

semiconductor compounds, as well as thermo convectors, ACADEMIA DE CIENCIAS DE MOSCU

01/1988 -

12/1989 ;

Proyecto de Investigación , Investigation of physical factors, limited the stability of GaP: N and AlGaAs

LED¿s and development of the recommendation for decreasing the size of the light-emitting crystals and

increasing the lifetime, ACADEMIA DE CIENCIAS DE MOSCU

Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE START MOSCOW

Investigadores Participantes : L. KOGAN

01/1988 -

12/1989 ;

Proyecto de Investigación , Electrical, Luminescence and structural investigation of light emitting

structure based on GaAs, ACADEMIA DE CIENCIAS DE MOSCU

Empresas Participantes : SCIENTIFIC-RESEARCH INSTITUTE MATERIALS

Investigadores Participantes : DR. I. DIROCHKA

01/1986 -

12/1990 ;

Proyecto de Investigación , No equilibrium electronic and electronic-atomic processes in materials for

electronic engineering and their technical applications, ACADEMIA DE CIENCIAS DE MOSCU

01/1986 -

12/1987 ;

Proyecto de Investigación , Investigation of the degradation mechanism for LED based on III-V

materials¿, ACADEMIA DE CIENCIAS DE MOSCU

Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE START MOSCOW

Investigadores Participantes : DR. L. KOGAN

01/1984 -

12/1986 ;

Proyecto de Investigación , Investigation of electro physical characteristics of laser heterostructures

during degradation¿, ACADEMIA DE CIENCIAS DE MOSCU

Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE VOLNA RUSSIA

Investigadores Participantes : DR. L. FILIPCHENKO

01/1982 -

12/1983 ;

Proyecto de Investigación , Investigation of physic-technological rezones of destruction of opt

electronic linear scale, ACADEMIA DE CIENCIAS DE MOSCU

Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE MIONGEORGIA

Investigadores Participantes : DR. S. ASHKINAZI

01/1981 -

12/1982 ;

Proyecto de Investigación , INVESTIGATION OF NOISE OF HF DIODES BY THE CAPACITANCE

SPECTROSCOPY METHODS¿., ACADEMIA DE CIENCIAS DE MOSCU

Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE M5191 UKRAINE

Investigadores Participantes : DR. L. SHCHERBUNA

01/1981 -

12/1985 ;

Proyecto de Investigación , Complex physic - chemical investigation of semiconductor materials in

connection with its technology and treatments, ACADEMIA DE CIENCIAS DE MOSCU

01/1981 -

12/1985 ;

Proyecto de Investigación , Research of no equilibrium and optical processes in wide-band-gap

semiconductors and semiconductor devices, as well as their industrial applications, ACADEMIA DE

CIENCIAS DE MOSCU

01/1980 -

12/1981 ;

Proyecto de Investigación , INVESTIGATION OF AGING AND DEGRADATION PROCESSES OF

PHOTO RESISTORS BASED ON CD: CU: CL CONGLOMERATED LAYERS, ACADEMICA

NACIONAL DE CIENCIAS DE UCRANIA

Empresas Participantes : SCIENTIFIC-INDUSTRIAL ENTERPRISE ELECTRODEVICES

Investigadores Participantes : DR. A. FILIPCHENKO

01/1976 -

12/1980 ;

Proyecto de Investigación , Photoelectric and Optical Phenomena in Semiconductors, ACADEMIA DE

CIENCIAS DE MOSCU

01/1974 -

12/1976 ;

Proyecto de Investigación , Theoretical and Experimental Investigation of No equilibrium Processes in

Semiconductors, stimulated by the light, electrical field and deformation., ACADEMIA DE CIENCIAS

DE MOSCU

GRUPOS DE

INVESTIGACION

08/1985 ; Defectos profundos en materiales de semiconductores y dispositivas, ACADEMICA NACIONAL DE

CIENCIAS DE UCRANIA ,T.V.Torchynska* , M.C. LARISA KHOMENKOVA , M.C. LUDMILA

SHCHERBINA, , M.C. V. GNATENCO ,ENTIDADES EXTERNAS

09/1988 ; Interacciones ultrasonido con solidos, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA

,T.V.Torchynska* , M.C. MIKHAIL LISYANSKII, , M.C. SERGEI OSTAPENKO , M.C.

VALENTINA KORCHNAYA ,ENTIDADES EXTERNAS

09/1990 ; Reacciones de defectos en semiconductores estimulados por injeccion de portadores, ACADEMICA

NACIONAL DE CIENCIAS DE UCRANIA ,T. V. Torchynska* , M.C. I. PUZIN , M.C. VLADIMIR

KUSHNIRENKO , M.C.ALEXAMDRO SENCHILO, ,ENTIDADES EXTERNAS

09/1985 ; Defectos en semiconductors creados por radiacion, ACADEMICA NACIONAL DE CIENCIAS DE

UCRANIA ,T. V. Torchynska* , M. C. A. SENCHILO , M.C. ALEXANDRO RUBAK , M.C. VITALII

GNATENKO, ,ENTIDADES EXTERNAS

09/1978 ; Reacciones en solidos estimulados por recombinacion, ACADEMICA NACIONAL DE CIENCIAS

DE UCRANIA ,T.V.Torchynska* , M.C. IRINA MARKEVICH, , M.C. LARISA KHOMENKOVA ,

M.C. NADEZHDA KOESUNSKA ,ENTIDADES EXTERNAS

09/1981 ; Fenomenos fotoelectricas en p-n transiciones de materiales II-VI, ACADEMICA NACIONAL DE

CIENCIAS DE UCRANIA ,T.V.Torchynska* , M. C. D. ABDULAEV , M.C. HALIK KAROBAEV, ,

M.C. MAKHMUD MIRZAZHANOV ,ENTIDADES EXTERNAS

09/1980 ; Mecanismos de degradacion de emisores de luz a base de semiconductores de grupo III-V,

ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA ,Dra. T. Torchynska* , M.C.

ALEJANDRO RUBAK , M.C. GZAMAL ABDULAEV , M.C. TETYANA BERDINSKIKH, , M.C.

VITALII GNATENKO ,ENTIDADES EXTERNAS

03/1999 ; Propiedades opticos en estructuras de bajo dimensionalidad de (Si and Ge) y de InAs, INSTITUTO


SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES ,T. V.

Torchynska* , DR. J. L. CASAS ESPINOLA , ING. ANNA LILIA QUINTOS VASQUEZ , ING.

INGRI JAZMIN GUERRERO MORENO , M.C. FRANCISCO BESERRIL ESPINOZA ,INST. DE

EDU. SUP. PUBLICAS

08/2002 ; Emision de luz en estructuras de laseres con puntos cuanticos de semiconductores de grupo III-V,


ESCUELA SUPERIOR DE INGENIERIA MECANICA Y ELECTRICA (UNIDAD ZACATENCO) /

DEPARTAMENTO DE INGENIERIA DE TELECOMUNICACIONES ,Dra. T. Torchynska* , DR.

ALEJANDRO VIVAS HERNANDEZ , DR. ERIK VELAZQUEZ LOSADA , M. C. ALEJANDRO

ITURRI HINOJOSA ,INST. DE EDU. SUP. PUBLICAS

08/2004 ; Characteriazacion optica y estructural de estructuras con nanocristales de SiC, INSTITUTO


SUPERIOR DE FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES ,Dra. T.

Torchynska* , DR. AARON ISRAEL DIAZ CANO , ING. JORGE YESCAS HERNANDEZ , M.C.

MIGUEL MORALES RODRIGES, ,INST. DE EDU. SUP. PUBLICAS

10/2006 ; Propiedades opticas de puntos cuanticos CdSe-ZnS bioconjugados, INSTITUTO POLITECNICO



BASICAS ,Dra. Tetyana Torchynska , DRA. JANNA DOUDA , ING. CÉSAR RAYMUNDO

GONZÁLEZ VARGAS , ING. ISIS CHETZYL BALLARDO RODRÍGUEZ , M.C ANNA LILIA

QUINTOS VAZQUEZ ,INST. DE EDU. SUP. PUBLICAS

10/2006 ; Programa de Maistria en Tecnologia avanzada en Electromagnetizmo y Fotonica (PNP

CONACYT), INSTITUTO POLITECNICO NACIONAL / UNIDADES ACADEMICAS DE NIVEL

SUPERIOR / UNIDAD PROFESIONAL INTERDISCIPLINARIA EN INGENIERIA Y

TECNOLOGIAS AVANZADAS , * , T.V. TORCHYNSKA - COORDINADOR DE LINIA

FOTONICA ,INST. DE EDU. SUP. PUBLICAS

09/2001 ; Programa Doctorado Fisica de Materiales (esta en PNP CONACYT), INSTITUTO POLITECNICO


FISICA Y MATEMATICAS / DEPTO. DE CIENCIAS DE MATERIALES ,T.Torchynska* , T,

TORCHYNSKA 'CORDINACIO NANOCIENCIAS SEMICONDUCT ,INST. DE EDU. SUP.

PUBLICAS

08/2011 ; Propiedades opticas y estructurales de las nanocristales de ZnO, INSTITUTO POLITECNICO



BASICAS ,Dra. Tetyana Torchynska , BRAHIM EL FELALI , BRENDA PEREZ MILAN , DR.

AARON ISRAEL DIAZ CASO , DR. ERICK VELAZQUEZ LOZADA , M.EN C. CETCILE

BALLARDO RODRIGUEZ ,INST. DE EDU. SUP. PUBLICAS

08/2011 ; propiedades opticas de InAs puntos cuanticos en estructuras de laseres, INSTITUTO


SUPERIOR DE FISICA Y MATEMATICAS / DEPARTAMENTO DE FISICA ,Dra. Tetyana

Torchynska* , . M.EN C. RICARDO CISNEROS TAMAYO , DR. JOSE LUIS CASAS ESPINOLA ,

M.EN C. INGRI JAZMÍN GUERRERO MORENO , M.EN C. LEONARDO GABRIEL VEGA

MACOTELA ,INST. DE EDU. SUP. PUBLICAS

01/2009 ; Propiedades opticas de puntos cuanticos CdSeTe/ZnS bioconjugados con anticuerpos, INSTITUTO



CIENCIAS BASICAS ,Dra. Tetyana Torchynska* , DR. AARON DIAZ CANO , DRA. JANNA

DOUDA , M.EN C, ANNA LILIA QUINTOS VAZQUEZ , M.EN C. ANTONIA JARAMILLA ,INST.

DE EDU. SUP. PUBLICAS

;DESARROLLOS

TECNOLOGICOS

01/1993 -

04/1993 ;

UKRAINIAN CANADIAN INDUSTRIAL COOPERATION, ACADEMICA NACIONAL DE

CIENCIAS DE UCRANIA ,BELL NOTHERN RESEARCH, OTTAVA, CANADA T.

TORCHYNSKA

01/1988 -

01/1993 ;

Method of quality control for photoelectric devices based on CdS - Cu2S, ACADEMICA

NACIONAL DE CIENCIAS DE UCRANIA ,SCIENTIFIC-INDUSTRIAL ENTERPRISE

¿KVARZ¿ (CHERNOVZU, UKRAINE) T.V.TORCHYNSKAYA, I.V.MARKEVICH,

N.E.KORSUNSKAYA,

01/1988 -

01/1993 ;

Method of semiconductor light-emitting diode produce, ACADEMICA NACIONAL DE CIENCIAS

DE UCRANIA ,SCIENTIFIC-INDUSTRIAL ENTERPRISE ¿START¿ (MOSCOW, RUSSIA)

T.V.TORCHYNSKAYA, ZH.A.ABDULAEV

01/1988 -

01/1993 ;

Ultrasound treating method for semiconductor heterostructures, ACADEMICA NACIONAL DE

CIENCIAS DE UCRANIA ,SCIENTIFIC-INDUSTRIAL ENTERPRISE T-4468 (SARATOV,

RUSSIA) T.V.TORCHYNSKAYA, S.S.OSTAPENKO, V.L.KORCHNAYA

01/1988 -

01/1993 ;

Method of light-emitting diode reliability improvement, ACADEMICA NACIONAL DE CIENCIAS

DE UCRANIA ,OPEN STOK COMPANY ¿CHISTUE METALS¿ (SVETLOVODSK, UKRAINE)

T.V.TORCHYNSKAYA, A.F.KARABOEV

01/1987 -

01/1992 ;

Method of In - Ga - As light-emitting diode creation, ACADEMICA NACIONAL DE CIENCIAS DE

UCRANIA ,OPEN STOK COMPANY ¿CHISTUE METALS¿ (SVETLOVODSK, UKRAINE)

T.V.TORCHYNSKAYA, T.G.BERDINSKIKH

01/1985 -

01/1990 ;

TREATING METHOD FOR CDS - CU2S PHOTOELEMENTS WITH CU CONTACT,

ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA ,SCIENTIFIC-INDUSTRIAL

ENTERPRISE ¿KVARZ¿ (CHERNOVZU, UKRAINE) T.V.TORCHYNSKAYA,

M.A.MIRZAZHANOV, A.I.MARCHENKO,

01/1984 -

01/1989 ;

Method of reliability improvement for CdS - Cu2S photoelements, ACADEMICA NACIONAL DE

CIENCIAS DE UCRANIA ,SCIENTIFIC-INDUSTRIAL ENTERPRISE ¿ELECTROPRIBOR¿

(KIEV, UKRAINE) T.V.TORCHYNSKAYA, M.A.MIRZAZHANOV

01/1983 -

01/1988 ;

THE SELECTION OF ACTIVATION METHODS FOR II-VI THIN FILM MATERIALS,

ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA ,SCIENTIFIC-INDUSTRIAL

ENTERPRISE ¿ELECTROPRIBOR¿ (KIEV, UKRAINE) T.V.TORCHYNSKAYA,

L.N.BAIDOKHA, M.YA.RAKHLIN

01/1982 -

01/1987 ;

Method of the photoresistor material creation, ACADEMICA NACIONAL DE CIENCIAS DE

UCRANIA ,SCIENTIFIC-INDUSTRIAL ENTERPRISE ¿ELECTROPRIBOR¿ (KIEV,

UKRAINE) T.V.TORCHYNSKAYA, L.N.BAIDOKHA, M. RAKHLIN

01/1982 -

01/1987 ;

Method of the photoresistor layer creation, ACADEMICA NACIONAL DE CIENCIAS DE


UKRAINE) T.V.TORCHYNSKAYA, L.N.BAIDOKHA, L.F.ZHAROVSKII, M.

01/1982 -

01/1987 ;

Method of noise HF diode selection, ACADEMICA NACIONAL DE CIENCIAS DE UCRANIA

,SCIENTIFIC-INDUSTRIAL ENTERPRISE M-5191 (UKRAINE) P.P.LOSHIZKII,

T.V.TORCHYNSKAYA, L.V.SCHERBINA,

01/1982 -

01/1987 ;

Method of semiconductor material layer creation, ACADEMICA NACIONAL DE CIENCIAS DE

UCRANIA ,CENTRAL DESIGN ENTERPRISE ¿RITM¿ (CHERNOVZU, UKRAINE)

T.V.TORCHYNSKAYA, L.N.BAIDOKHA, M.RAKHLIN

01/1981 -

01/1986 ;

Method of semiconductor device quality control, ACADEMICA NACIONAL DE CIENCIAS DE


UKRAINE) T.V.TORCHYNSKAYA, L.N.BAIDOKHA, M.A.MIRSAZANOV

;APOYOS CONACYT

02/2014 -

07/2014 ; 000207604, Proyecto Científico , REPATRIACIÓN/CONSOLIDACION INS

04/2011 -

03/2014 ; 00000130387, Proyecto Científico , FONDO CIENCIA BASICA

05/2010 -

10/2010 ; 00000131184, Proyecto Científico , APOYOS ESPECIALES

01/2010 -

12/2014 ; 22015, Formación Académica , ESTIMULO SNI

09/2007 -

09/2010 ; PROY. 58358, Proyecto Científico , FONDO CIENCIA BASICA

11/2006 -

12/2009 ; MEX-ISRAEL, Proyecto Científico , APOYOS ESPECIALES

11/2006 -

12/2008 ; MEX-UCRANIA, Proyecto Científico , APOYOS ESPECIALES

01/2005 -


12/2003 -

06/2006 ; U42436, Proyecto Científico , FONDO CIENCIA BASICA

09/2003 -

09/2005 ; MEX-EE.UU., Proyecto Científico , APOYOS ESPECIALES

06/2001 -


01/2001 -

12/2003 ; MEX-R.CHECA, Proyecto Científico , APOYOS ESPECIALES

01/2001 -

12/2003 ; MEX-UCRANIA, Proyecto Científico , APOYOS ESPECIALES

01/2001 -

12/2003 ; MEX. ISRAEL, Proyecto Científico , APOYOS ESPECIALES

10/2000 -

12/2003 ; 33427-U, Proyecto Científico , FONDO CIENCIA BASICA

01/2000 -

12/2002 ; MEX-USA, Proyecto Científico , APOYOS ESPECIALES

02/1999 -

01/2001 ; 990051, Formación Académica , CATEDRAS PATRIMONIALES

PROPIEDAD INTELECTUAL

;PATENTES

REGISTRADAS EN

MEXICO

; METHOD OF THE PHOTORESISTOR MATERIAL CREATION, . N 1055291, , , En explotación

Comercial , ,

; METHOD OF THE PHOTORESISTOR LAYER CREATION, . N 1119561, , , En explotación

Comercial , ,

; METHOD OF SEMICONDUCTOR MATERIAL LAYER CREATION, N 1050483, , , En

explotación Comercial , ,

; METHOD OF NOISE HF DIODE SELECTION, N 1100586, , , En explotación Comercial , ,

; METHOD OF RELIABILITY IMPROVEMENT FOR CDS - CU2S PHOTOELEMENTS, N

1241953, , , En explotación Comercial , ,

; METHOD OF IN - GA - AS LIGHT-EMITTING DIODE CREATION, N 1295956, , , En


; TREATING METHOD FOR CDS - CU2S PHOTOELEMENTS WITH CU CONTACT, 1322935, ,

, En explotación Comercial , ,

; TREATING METHOD FOR SEMICONDUCTOR DEVICES, N 1356890, , , En explotación

Comercial , ,

; METHOD OF SEMICONDUCTOR LIGHT-EMITTING DIODE PRODUCE, N 1628783, , , En


; METHOD OF LIGHT-EMITTING DIODE RELIABILITY IMPROVE, N 1664089, , , En


; Method of semiconductor device quality control, N 993174, , , En explotación Comercial , ,

; Ultrasound treating method for semiconductor heterostructures, N1609389, , , En explotación

Comercial , ,

; ACTIVATION METHOD SELECTION FOR II-VI THIN FILM MATERIALS, 1157992, , , En


; METHOD OF QUALITY CONTROL FOR PHOTOELECTRIC DEVICES BASED ON CDS -

CU2S, N 1326027, , , En explotación Comercial , ,

;DERECHOS DE AUTOR

31/10/2008 ; NANOSTRUCTURES AND QUANTUM DOTS OF GROUP IV SEMICONDUCTORS, 03-2008-

101711293800-01 , Coautor , LOS CIENTIFICOS QUEN TRABAJAN EN AREA DE

ESTRUCTURAS CON PUNTOS CUANTICOS DE SEMICONDUCTORES PARA DISPOSITIVOS

ELECTRONICOS DE NUEVO GENERACION , Pública

DISTINCIONES Y PREMIOS

DISTINCIONES

2014 ; Organization Committee of Symposium: Theory, modeling, ... at ICCMSE 2014, Greece. Athens

University, Grecia Grecia, Athens University, Grecia

2013 ; Guest Editor of Material Research Society Proceeding v. 1534, 2013 Material Research Society

EEUU Estados Unidos, Cambridge University Publisher

2013 ; Invited talk Physical reasons of the emission variation in core/shell CdSeTe ZnS quantum dots México, International Conference WAVES in Science and Engineering on WiSE 2013,

2013 ; Guest Editor of Special Issue of PHYSICA E, V.51, 2013 (Elsevier) Elsevier Publisher Reino Unido,

Elsevier Publisher

2013 ; Organizadora del Simposio 7E " Low dimensional .semicondactor ...""..en IMRC 2013, Can Cun,

Mexico Sociedad Mexicana de Materiale México, MRS - EEUU

2013 ; Integrante externo de Comite Evaluadoros de Convocatoria Proyectos Investigacion Universidad

IBEROAMERICANA México, Universidad IBEROAMERICANA, Cuidad Mexico

2013 ; Guest Editor of Material Research Society Proceeding v. 1617, 2013 Material Research Society

EEUU Estados Unidos, Cambridge University Publisher

2013 ; Mas interesados capitulos de libros en INTECH INTECH Croacia, INTECH publisher

2012 ; Invited presentation Nanocrystalls of IV and III-V groups CONACYT México, Congso Nacional de

Investigacion Cientifica Basica 2012 `¿Casos de Éxito¿

2012 ; Organizadora del Simposio 6B "Low dimensional .semiconductor ....""..en IMRC 2012, Can Cun,

Mexico Sosiedad Mxicana de Materiales México, MRS - USA

2012 ; Presentacion Invitada con titulo "Si quantum dot structures and their applications" Sociedad

Mexicana Materiales México, MRS USA

2012 ; Presentacion Invitada""Si and Ge quantum dots and different aspects of aplication"" CIICAp

México, Universidad Autonoma del Estado de Morelos

2012 ; Integrante de la Comision de Expertos de Fisico Matematicas de CONACYT CONACYT México,

El Fondo Sectorial de Investigacion para la Educacion de CONACYT

2012 ; MEMBER OF EDITORIAL BOARD OF NANO Bulletin, ISSN 2159-0427 Global Scientific

Publishers Canadá, Global Scientific Publishers

2011 ; Invited talk: Si and Ge quantum dots and examples of applications DAADde Intercambio Mexico-

Alem México, IPN

2011 ; Evaluadora de los proyectos CONACYT 2011 CONACYT México, CONACYT

2011 ; Invited talk:, Si quantum dots and different aspects of applications, Society SPIE USA Estados

Unidos, Society SPIE USA

2011 ; Invited talk:, CdSe/ZnS quantum dots with interface states as biosensors Society SPIE USA Estados

Unidos, Society SPIE USA

2011 ; Evaluadora externa en Comicion de UAM UAN México, UNIV. AUTONOMA METROPOLITANA

2011 ; Invited talk: Si and Ge Quantum dots and different aspects of applications Sociedad mexicana de

materiale México, MRS-USA

2010 ; Mas importantes articulas 2009 en NANOTECHNOLOGY IOP Publishing Reino Unido, IOP

Publishing

2010 ; Invited talk:: Emission efficiency of crystalline and amorphous Si nanoclusters IEEE Society

Rumanía, Rumania Academia de Ciencias

2010 ; Invited talk:, Semiconductor Quantum dots with interace state in biology and medicine Universidad

del Roma Italia, Universidad del Roma

2009 ; Presentacion invitada Semiconductor Nanocrystals and Quantum Dots Instituto Politecnico Nacional

México, UPIITA-INSTITUTO POLITECNICO NACIONAL

2009 ; Premio de la Investigacion 2009 del IPN Instituto Politechnico México, INSTITUTO

POLITECHNICO NACIONAL

2009 ; Presentacion invitada, Photoluminescence study and the evaluation of DWELL structure

parameters Lodz University Polonia, Lodz University

2009 ; Presentacion invitada Semiconductor Nanocrystals and Quantum Dots Universidad Politecnica

México, UNIVERSIDAD POLITECNICA DEL VALLE DEL MEXICO

2009 ; Member of Scientific Program Committee of International Conference "Interaction Among

Nanostructure Universidad de Arkanzas Estados Unidos, UNIVERSIDAD DE ARKANZAS

2009 ; Presentacion invitada ¿¿Exciton -polariton efects in SiC nanocrystals Universidad Kerala India,

UNIVERSIDAD KERALA Y INDIA MRS

2008 ; Some reasons of emission nonhomogenety in InAs quantum dot structures Academia de Ciencias

Ucrania Ucrania, FISICA DE SEMICONDUCTORES DE ACADEMIA DE CIENCIAS UCRANIA

2008 ; Exciton capture and thermal escape in InAs DWELL structures Hebrea Universidad de Jerusalé

Israel, HEBREA UNIVERSIDAD DE JERUSALEN ISRAEL

2008 ; Member of the International Editorial and Advisory Board IST Press Canadá, IST PRESS

PUBLISHER HOUSES

2008 ; Semiconductor Nanocrystals and Quantum Dots Universidad Politecnica México, UNIVERSIDAD

POLITECNICA DEL VALLE DE MEXICO

2008 ; Presentacion magistral ¿Some aspects of exciton thermal exchange in InAs QD DWELL laser

structures Ohio y Arkanzas Universities Estados Unidos, OHIO UNIVERSITY AND NANO

RESEARCH SOCIETY OF USA

2008 ; Nanocrystals and Quantum Dots of group IV semiconductors Instituto Politecnico Nacional México,

ESIME DEL INSTITUTO POLITECNICO NACIONAL

2007 ; Raman scattering in bioconjugated CdSe/ZnS quantum dots H. Lee Moffitt Cancer Center Estados

Unidos, H LEE MOFFITT CANCER CENTER AND RESEARCH INSTITUTE TAMPA EEUU

2007 ; Opical characterization of porou SiC Instituo Politecnico Nacional México, UPIITA DEL INSTITUO

POLITECNICO NACIONAL

2007 ; Premia de Directora de Mejor Tesis Doctorado del IPN en 2007 SIP-IPN México, INSTITUTO

POLITECNICO NACIONAL

2007 ; Exciton capture and thermal escape in InAs DWELL structures Academia Nacional de Ciencias

Ucrania, INSTITUTO DE FISICA DE SEMICONDUCTORES DE ACADEMIA NACIONAL DE

CIENCIAS DE UCRANIA

2007 ; Membro of Scientific Program Committee2008 International Conference "Interaction Among

Nanostructure Ohio University Estados Unidos, OHIO UNIVERSITY USA

2007 ; The Si and Ge quantum dots in different matrices Hebrea Universidad de Jerusalé Israel, HEBREA

UNIVERSIDAD DE JERUSALEN ISRAEL

2007 ; Membre of Program Committee, responsible for the section Low Dimensional Semiconductor

Nanostructure National Science Foundation Estados Unidos, UNIVERSITY OF ARKANZAS Y

NATIONAL SCIENCE FOUNDATION

2007 ; Exciton polariton effects in SiC nanocrystals Academia de Ciencias de Rusia Federación Rusia,

INSTITUTO IOFFE DE FISICO-TECNICA DE ACADEMIA DE CIENCIAS DE RUSIA

2006 ; MEMBER OF INTERNATIONAL PROGRAM COMMITTEE Uzbekistan Academi of Science

Uzbekistán, FERGANSKII POLYTECHNIC INSTITUTE

2006 ; Exciton dynamics in InAs quantum dots embedded in InGaAs/GaAs quantum well structures Academia Nacional de Ciencias Ucrania, INSTITUTO DE FISICA DE SEMICONDUCTORES DE

ACADEMIA NACIONAL DE CIENCIAS DE UCRANIA

2006 ; Exciton thermal escape in InAs quantum dots embedded in InGaAs/GaAs quantum well structures Universidad Florida Sur Ucrania, CENTRO DE NANOMATERIALES Y NANOTECNOLOGIAS

TAMPA EEUU

2006 ; Raman scattering in bioconjugated CdSe/ZnS quantum dots Academia Nacional de Ciencias

Ucrania, INSTITUTO DE FISICA DE SEMICONDUCTORES DE ACADEMIA NACIONAL DE

CIENCIAS DE UCRANIA

2006 ; Invited talk "Exciton dynamics in InAs quantum dots embedded in InGaAs/GaAs quantum well

structures Middle East Technical Universi Turquía, MIDDLE EAST TECHNICAL UNIVERSITY

TURKEY

2006 ; Presentacion invitada "Ballistic effect and photoluminescence of Si nanocrystallite structures" Benemerita Universidad Autonom México, BENEMERITA UNIVERSIDAD AUTONOMA DE

PUEBLA

2006 ; Presentacion invitada ¿¿ XV International Material Research Congress, Can Cun, 2006¿¿. Academia Mexicana de Ciencias México, ACADEMIA MEXICANA DE CIENCIAS DE

MATERIALES AC

2006 ; Comite Editorial y de Arbitraje de 11a Reunion Nacional Academica de Fisica ESFM-IPN México,

IPN

2006 ; Miembro de Comite Academico de Programa 'Electromagnetizmo y Fotonica" y Coordinador area

Fotonica IPN México, UPIITA-IPN

2005 ; Emission of Si nanocrystals in different matrices Academia de Ciencias de Hungar Hungría,

INSTITUTO DE FISICA TECNICA Y CIENCIAS DE MATERIALES DE ACADEMIA DE

CIENCIAS DE HUNGARIA

2005 ; Ground and Excited energy trend in InAs quantum dots Universidad Florida Sur Estados Unidos,

CENTRO DE NANOMATERIALES Y NANOTECNOLOGIAS TAMPA EEUU

2005 ; Ground and Excited level energy trend in InAs quantum dots Academia de Ciencias de Rusia

Federación Rusia, INSTITUTO IOFFE DE FISICO-TECNICA DE ACADEMIA DE CIENCIAS DE

RUSIA

2005 ; Ground and Excited level energy trend in InAs quantum dots Universidad de Nuevo Mexico Estados

Unidos, CENTRO DE MATERIALES DE TECHNOLOGIA ALTA ALBUQUERQUE EEUU

2005 ; Presentacion invitada at First Conference on Advances in Optical Materials, Tucson, Arizona, USA American Optical Society Estados Unidos, AMERICAN OPTICAL SOCIETY AND UNIVERSITY OF

ARIZONA

2005 ; Exciton polariton effects in SiC nanocrystals Academia Nacional de Ciencias Ucrania, INSTITUTO

DE FISICA DE SEMICONDUCTORES DE ACADEMIA NACIONAL DE CIENCIAS DE UCRANIA

2005 ; Presentacion magistral INTERNATIONAL WORKSHOP SEMINANO2005, Hungary, Budapest,

September, 2005 Hungary Academy of Science Hungría, RESEARCH INST FOR TECHNICAL

PHYSICS AND MATERIAL SCIENCE AT HUNGARY ACADEMY OF SCIENCIES

2005 ; Presentacion magistral "Photoluminescence of Si and Ge nanocrytsallites" Awaji University, Japón,

AWAJI UNIVERSITY JAPAN

2004 ; Emission of Si enriched silicon oxide Hebrea Universidad de Jerusalé Israel, HEBREA

UNIVERSIDAD DE JERUSALEN ISRAEL

2004 ; Magistral ,XXIV Congreso Annual Sociedad Mexicano de Ciencia y Tecnologia de Superficies y

Mate¿rial Sociedad Mexicano de Ciencia y México, SOCIEDAD MEXICANO DE CIENCIA Y

TECNOLOGIA DE SUPERFICIES Y MATERIALES

2004 ; Miembro de la Academia Mexicana de Ciencias Academia Mexicana de Ciencias México,

ACADEMIA MEXICANA DE CIENCIAS

2004 ; Emission non homogeneity in InAs DWELL structures Universidad Florida Sur Estados Unidos,

CENTRO DE NANOMATERIALES Y NANOTECNOLOGIAS TAMPA EEUU

2004 ; 2004-Premio de Investigacion del IPN INSTITUTO POLITECNICO NACIONAL México,

INSTITUTO POLITECNICO NACIONAL

2003 ; Emission of InAs quantum dos in DWELL structures with different composition of capping layers Universidad de Nuevo Mexico Estados Unidos, CENTRO DE MATERIALES DE TECHNOLOGIA

ALTA ALBUQUERQUE EEUU

2003 ; AWARD -proyecto N42436 CONACYT, Mexico- National Science Foundation, USA Cooperation

program CONACYT-NSF Estados Unidos, CONACYT MEXICO - NSF USA

2003 ; InAs quantum dot emissin in DWELLstructures Academia de Ciencias de Hungar Hungría,

INSTITUTO DE FISICA TECNICA Y CIENCIAS DE MATERIALES DE ACADEMIA DE

CIENCIAS DE HUNGARIA

2003 ; Invited lecture "Hot carrier ballistic transport and photoluminescence excitation in silicon nanocry ASTATPHYS-Mex-2003 México, ASTATPHYS-MEX-2003 Y INSTITUTO MEXICANO DE

PETROLIO

2003 ; Invited lecture "High Efficient Solar Cells for Space Applications" Sociedad Mexicana de Superfic

México, SOCIEDAD MEXICOANA DE SUPERFICIO Y VACIO

2003 ; Invited specker XXII I Congreso Annual Sociedad Mexicano de Ciencia y Tecnologia de Superf. y

Mater. Sociedad Mexicano de Ciencia y México, SOCIEDAD MEXICANO DE CIENCIA Y

TECNOLOGIA DE SUPERF Y MATERIALES

2002 ; INVITED LECTURE at THE FIRST INTERNATIONAL CONFERENCE ON ADVANCED

SPACE INVESTIGATIONS SPACE AGENCY of UKRAINE Ucrania, NACIONAL ACADEMY OF

SCIENCES AND SPACE AGENCY OF UKRAINE

2002 ; MEMBER OF SCIENTIFIC COMMITTEES OF THE FIRST INTERNATIONAL

CONFERENCE ON ADVANCED SPACE SPACE AGENCY of UKRAINE Ucrania, NACIONAL

ACADEMY OF SCIENCES AND SPACE AGENCY OF UKRAINE

2002 ; MEMBER OFPROGRAM COMMITTEES OF THE FIRST INTERNATIONAL CONFERENCE

ON ADVANCED SPACE SPACE AGENCY of UKRAINE Ucrania, NACIONAL ACADEMY OF

SCIENCES AND SPACE AGENCY OF UKRAINE

2002 ; Invited talk "Mechanism of photoluminescence of silicon oxide films enriched by Si or Ge" International Union of MRS China, INTERNATIONAL UNION OF MRS

2002 ; Photoluminescence study in Si nanocrystals Universidad Nuevo Mexico Estados Unidos, CENTRO

DE MATERIALES DE TECHNOLOGIA ALTA ALBUQUERQUE EEUU

2002 ; Invited lecture: "Ballistic regime and photoluminescence excitation in Si wires and dotes" Academia de Ciencias de Hungar Hungría, ACADEMIA DE CIENCIAS DE HUNGARY

2002 ; Invited talk "Binding energy of localized excitons in InAs self-assembled quantum dots embedded

into Academia de Ciencias de Russia Federación Rusia, ACADEMIA DE CIENCIAS DE RUSSIA

2001 ; Miembro del Comite Academico de la Programa Doctorado "Fisica de los Materiales" Instituto

Politecnico Nacional México, ESFM- INSTITUTO POLITECNICO NACIONAL

2001 ; MEMBER OF INTERNATIONAL PROGRAM COMMITTEES OF THE 6TH

INTERNATIONAL WORKSHOP ON EXPERT EVALUATION AN Academia de Ciencias de

Hungar Hungría, ACADEMIA DE CIENCIAS DE HUNGARIA

2000 ; Plenary talk "Application of III-V material solar cells in space solar energetics" Sociedad Mexicana

Superficio y México, SOCIEDAD MEXICANA SUPERFICIO Y VACIO

2000 ; Plenary talk at Gordon Research Conferences, July 9-14, 2000, New-London, N.H., USA. Gordon

Research Committee Estados Unidos, GORDON RESEARCH COMMITTEE OF USA

1999 ; Plenary lecture at 2-th National Congress of Crystallography, Ensenada, Mexico. Sociedad

Mexicana de Crystallo México, SOCIEDAD MEXICANA DE CRYSTALLOGRAFIA

1999 ; Invited lecture Perspectives of III¿V Material Solar Cell Application in Space Solar Cell Delhi

University India, DELHI UNIVERSITY INDIA

1998 ; INDIVIDUAL GRANT: N QSU082200 of INTERNATIONAL SCIENCE FAUNDATION ( USA,

WASHINGTON) INTERNATIONAL SCIENCE FAUNDATI Estados Unidos, INTERNATIONAL

SCIENCE FAUNDATION USA WASHINGTON

1998 ; AWARD - UKRAINIAN MEDAL "80TH ANNIVERSARY OF NATIONAL ACADEMY OF

SCIENCES of Ukraine" Academia Nacional de Ciencias Ucrania, ACADEMIA NACIONAL DE

CIENCIAS DE UCRANIA

1998 ; Invited speaker Inter. Conference ¿Extended Defects in Semiconductors¿, Jaszowiec, POLAND,

1998, Poland Academy of Science Polonia, POLAND ACADEMY OF SCIENCE

1998 ; Invited lecture at NATO International Workshop on Solar energy Engineering, Poland, Warsow,

1998 Poland Academy of Sciencies Polonia, POLAND ACADEMY OF SCIENCIES

1997 ; Invited lecture ¿Transformation of GaP Layer luminescence Spectra on Introduction Dislocations, NATO Eslovaquia, NATO ADVANCED RESEARCH WORKSHOP

1997 ; Invited lecture ¿Comparison of Si and AlGaAs/GaAs solar cell perspectives Chernivtsi University

Ucrania, CHERNIVTSI UNIVERSITY UKRAINE

1996 ; Invited lecture ¿ Electrical and optical properties of non-uniform semiconducting synthetic diamon IEEE SIMC Francia, IEEE SIMC

1996 ; Invited lecture ¿Deep centers in MOCVD InGaAs photodiodes for optical fiber and its influence on

di Academia de Ciencia de Rusia Federación Rusia, ACADEMIA DE CIENCIA DE RUSIA

1995 ; Invited lecture at Third IUMRS International Conference in Asia (IUMRS-ICA-'95), Seoul,

SOUTH KOREA, INTERNATIONAL uNION OF MRS República Corea, INTERNATIONAL

UNION OF MRS

1995 ; ADVISER OF THE HEAD OF COMMITTEE OF UKRAINE FOR SCIENCE AND

TECNOLOGY MINISTRY OF SCIENCE Ucrania, MINISTRY OF SCIENCE AND EDUCATION

OF UKRAINE

1995 ; Invited lecture "Basic mechanism of injection¿enhanced light-emitting diode degradation" Universities Paris 6&7 Francia, UNIVERSITIES PARIS 67 PARIS FRANCE

1995 ; Comite de Organizadores y Editorial Kherson Universidad Ucrania, MINISTERIO DE EDUCACION

DE UCRANIA

1995 ; AWARD - STATE UKRAINIAN PRIZE IN SCIENCE and TECHNIQUE PRESIDENT OF

UKRAINE Ucrania, AWARDED BY PRESIDENT OF UKRAINE

1995 ; MEMBER OF SPECIALIZED QUALIFICATION COUNSELS OF DOCTOR OF SCIENCE

DEGREE AWARD Cabinet of Ministros of Ukrain Ucrania, ACADEMIA NACIONAL DE

CIENCIAS DE UCRANIA AND CABINET OF MINISTROS OF UKRAINE

1994 ; iNVITED LECTURE International Conference on Electronic Materials (ICEM¿94) , Hsinchu,

Taiwane Hsinchu University Taiwán, Provincia China, HSINCHU UNIVERSITY

1994 ; Plenaru lecture at 1994 IEEE INTERNATIONAL RELIABILIT SIMPOSIUM, San-Jose, CA,

USA, 1994 American IEEE Society Estados Unidos, AMERICAN IEEE SOCIETY

1994 ; AWARD -INDIVIDUAL GRANT N1219 of INTERNATIONAL SCIENCE FAUNDATION (USA,

WASHINFTON) INTERNATIONAL SCIENCE FAUNDATI Estados Unidos, INTERNATIONAL

SCIENCE FAUNDATION USA WASHINFTON

1994 ; Invited lecture " Characterization of deep-level defects in MOCVD InxGa1-xAs layers", Academia

de Ciencias de Poland Polonia, ACADEMIA DE CIENCIAS DE POLANDIA

1994 ; Presentacion invitada¿Characterization of deep level defectsin MOCVD InGaAs layers Instituto de

Fisica de solido Polonia, ACDEMIA DE CIENCIA DE POLONIA

1994 ; Invited lecture at SPIE Meeting ¿Microelectronic and Manufacturing¿ San-Diego, (USA), 1994, SPIE Society Estados Unidos, SPIE SOCIETY

1994 ; Invited lecture "Injection-enhanced defect reactions in III-V light emitting diodes" Hewlett Packard

Com. , Estados Unidos, MATERIALS TECHNOLOGY RD OPTOELECTRONICS DIVISION

HEWLETT PACKARD COM SAN-JOSE CALIFORNIA USA

1993 ; AWARD - INDIVIDUAL GRANT N 1572 of INTERNATIONAL SCIENCE FAUNDATION

(Washington, USA) INTERNATIONAL SCIENCE FAUNDATI Estados Unidos, INTERNATIONAL

SCIENCE FAUNDATION WASHINGTON USA

1993 ; Invited lecture "Defect reactions in III-V light emitting diodes in unequlibrium state" Bell Northern

Research, Canadá, BELL NORTHERN RESEARCH OTTAWA ONTARIO CANADA

1993 ; Invited lectures "Injection-enhanced defect reactions in III-V light emitting diodes Toronto

University, Canadá, TORONTO UNIVERSITY WATERLOO UNIVERSITY MAC-MASTER

UNIVERSITY

1993 ; MEMBER OF GENERAL COUNSEL ON SPACE HELIO ENERGY NATIONAL SPACE

AGENCY OF UKRAINE, KIEV. SPACE AGENCY OF UKRAINE Ucrania, NATIONAL SPACE

AGENCY OF UKRAINE

1991 ; Comite de Programa Kishinew Universidad República Moldavia, MOLDOVA ACADEMIA DE

CIENCIAS

1991 ; Invited lecture "Electronically ¿ Enhanced Defect Reactions in Wide-Gap Semiconductors: University of Messina Italia, INSTITUTE OF THEORETICAL PHYSICS OF UNIVERSITY OF

MESSINA

1991 ; Plenary lectur III-th USSR Conference ¿Physical Bases of Relability and Degradation of

Semiconductor USSR Academy of Sciences República Moldavia, USSR ACADEMY OF SCIENCES

1990 ; Invited lecture "Injection-Enhanced Defect Reactions in III-V Light-emitting Materials Bulgarian

Academy of Science Bulgaria, BULGARIAN ACADEMY OF SCIENCES

1990 ; MEMBER OF ORGANIZATION AND PROGRAM COMMITTEES OF THE USSR NATIONAL

CONFERENCE ON PHYSICS OF SEMICOND ACADEMY OF SCIENCES OF UKRAINE

Ucrania, NATIONAL ACADEMY OF SCIENCES OF UKRAINE

1990 ; MEMBER OF GENERAL SCIENTIFIC COUNCIL OF INSTITUTE OF SEMICONDUCTOR

PHYSICS, NATIONAL ACADEMY OF SCIE NACIONAL DE CIENCIA DE UCRANIA Ucrania,

ACADEMIA NACIONAL DE CIENCIA DE UCRANIA

1990 ; MEMBER OF SPECIALIZED QUALIFICATION COUNSELS OF DOCTOR OF SCIENCE

DEGREE AWARD Cabinet of Ministers of Ukrain Ucrania, NATIONAL ACADEMY OF SCIENCE

OF UKRAINE AND CABINET OF MINISTERS OF UKRAINE

1990 ; Plenary talk XII-USSR Conference ¿Physics of Semiconductors¿, Kiev, USSR, 1990 USSR

Academy of Sciences Ucrania, USSR ACADEMY OF SCIENCES

1990 ; Invited lecture at III USSR Conference ¿Physics and Technology of thin semiconductor films¿, USSR Academia de Ciencias Ucrania, USSR ACADEMIA DE CIENCIAS

1989 ; Presentacion invitada Degradation of GaP N and GaP N Zn O light emitting diodes Chernigov

Universidad Ucrania, ACADEMIA DE CIENCIAS DE UCRANIA

1989 ; MEMBER OF ORGANIZATION COMMITTEES OF UKRAINE CONFERENCE PHYSICAL

METHODS OF THE FORECAST ACADEMY OF SCIENCES OF UKRAINE Ucrania, NATIONAL

ACADEMY OF SCIENCES OF UKRAINE

1989 ; Presentacion invitada Injection enhanced defect center transformation in red AlGaAs light

emitting d Ioffe Fisico Tech. Institute Federación Rusia, ACADEMIA DE CIENCIAS DE RUSIA

1989 ; Comite de Organizadoras Ioffe Fisico Tech Instituto Federación Rusia, ACADEMIA DE CIENCIAS

DE RUSIA

1989 ; Plenary lecture "Joint mechanism of the defect transformation in light-emitting diodes under

degrada Academia de Ciencias Azerbaidz Azerbayán, ACADEMIA DE CIENCIAS

AZERBAIDZHAN

1988 ; AWARD - USSR MEDAL "INVENTOR USSR" COUNCIL OF MINISTRY OF USSR, Federación

Rusia, COUNCIL OF MINISTRY OF USSR MOSCOW RUSSIA

1986 ; MEMBER OF PROGRAM COMMITTEES OF 2TH USSR CONFERENCE PHYSICAL BASE

OF RELIABILITY AND DEGRADATION MOLDOVA POLYTECHNIC INSTITUTE República

Moldavia, MOLDOVA POLYTECHNIC INSTITUTE AND ACADEMY OF SCIENCES

1986 ; Invited lecture "Degradation of the green GaP:N light emitting diodes and factors, influent on it," Academia De Ciencias Moldova República Moldavia, ACADEMIA DE CIENCIAS REPUBLICA

MOLDOVA

1986 ; Comite del Programa y Copmite Editorial de libro de memorias, Kishinew Universidad República

Moldavia, ACADEMIA DE CIENCIAS DE REPUBLICA DE MOLDAVIA

1984 ; Presentacion invitada Influence of electron irradiation with thereshold energy on the characteristic Tashkent University Uzbekistán, UZBEKISTAN ACADEMIA DE CIENCIAS

1984 ; Invited lecture "Physical nature of the light emitting diode and semiconductor laser degradation" Academia de Ciencias de Rusia Federación Rusia, ACADEMIA DE CIENCIAS DE RUSIA

1983 ; AWARD - USSR MEDAL "MEMORY OF 1500TH ANNIVERSARY OF KIEV" ACADEMY OF

SCIENCES OF UKRAINE Ucrania, NATIONAL ACADEMY OF SCIENCES OF UKRAINE

1983 ; MEMBER OF PROGRAM COMMITTEE OF USSR NATIONAL CONFERENCES PHYSICS

AND TECHNICAL APPLICATIONS OF II ACADEMY OF SCIENCES OF Lotuani Lituania,

ACADEMY OF SCIENCES OF LOTUANIA

1983 ; Invited lecture" Elementary mechanisms of the photofatigue, aging and degradation processes in

II-VI Academia de Ciencias de Rusia Federación Rusia, ACADEMIA DE CIENCIAS DE RUSIA

1983 ; Presentacion invitada¿Photostimulated transformation and formation of local defects in II'VI

semicon Riga Universidad Letonia, ACADEMIA DE CIENCIAS DE LETONIA

1982 ; Presentacion invitada Mechanisms of photostimulated defect formations in semiconductors Baku

Universidad Azerbayán, AZERBAIDZAN ACADEMIA DE CIENCIAS

1982 ; Invited lecture "Photofatigue and aging in solar cells" Moldova Academi of Sciencies República

Moldavia, MOLDOVA ACADEMI OF SCIENCIES

1982 ; Las Comitetas de Programa y Editorial Odessa Universidad Ucrania, ACDEMIA DE CIENCIAS DE

UCRANIA

1982 ; Invited lecture "Mechanism of ageing process in phtoresistors based on CdS:Cu:Cl thin films" Academy of Sciences of Ukraine Ucrania, NATIONAL ACADEMY OF SCIENCES OF UKRAINE

1981 ; Presentacion magistral Physica nature of degradation of light emitting diodes and lasers Ioffe

Fisico Techn Institute Federación Rusia, ACADEMIA DE CIENCIAS DE RUSIA

1980 ; Invited lecture "Photostimulated deep centers convertion in II-VI semiconductors" Academia de

Ciencias de Rusia Federación Rusia, ACADEMIA DE CIENCIAS DE RUSIA

1979 ; MEMBER OF PROGRAM COMMITTEE OF USSR NATIONAL CONFERENCES ACADEMY

OF SCIENCES OF UKRAINE Ucrania, NATIONAL ACADEMY OF SCIENCES OF UKRAINE

1979 ; Invited lecture at 1-th Ukrainian Conference ¿Photoelectric Phenomena in Semiconductors¿, Academia de Ciencias Ucrania Ucrania, ACADEMIA DE CIENCIAS NACIONAL DE UCRANIA

1977 ; Invited lecture at Inter. Conference ¿ Science and Technic. of New Materials¿, Moscow, USSR Russian Academy of Sciences Federación Rusia, RUSSIAN ACADEMY OF SCIENCES

DIVULGACION Y DIFUSION

DIVULGACION Y

DIFUSION

16/07/2014 ; 18. Preface of the "symposium on theory, modeling, investigation and simulation of low-

dimensional semiconductor systems", AIP Conference Proceedings , Extranjero , Medios Impresos ,

AIP Conference Proceedings, 2014, Memorias del ICCMSE 2014, Athens, Greece, 04-07 Abril, 2014

11/06/2014 ; LOW-DIMENSIONAL SEMICONDUCTOR STRUCTURES, Elsevier Publishing House ,

Extranjero , Medios Impresos , Tetyana V. Torchynska, Larysa Khomenkova, Georgiy Polupan,

Gennadiy Burlak,, Editores de Special Issue `¿Low-Dimensional Semiconductor structures¿, Physica B,

v.453, 2014.

08/01/2014 ; ORGANIZADORA DE ICCMSE 2014 10TH INTERNATIONAL CONFERENCE OF

COMPUTATIONAL METHODS IN SCIENCES AND ENGINEERING, Athens University, Greece

, Extranjero , Simposium , Simposium Organizer, Theory, modeling, investigation and simulation of

Low-Dimensional Semiconductor Systems, Athens, Greece, Metropolitan hotel,April 04-07, 2014,

http://www.iccmse.org

07/01/2014 ; EDITORA DE MRS PROCEEDING BOOK LOW DIMENSIONAL SEMICONDUCTOR

STRUCTURES, Material Research Society of USA , Extranjero , Medios Impresos , Editor of MRS

Proceeding book, Cambridge Uneversity Press, v.1617, paper presented in Symposium 7E ""Low

dimensional Semiconductor structures"" at IMRC 2013, Can Cun, Mexico

05/11/2013 ; PHYSICAL REASONS OF THE EMISSION VARIATION IN CORE/SHELL CDSE CDSETE

ZNS QUANTUM DOTS CONJUGATED TO ANTIBODIES, SEP Mexico , Nacional , Conferencias

, T. V. Torchynska (invitada), Physical reasons of the emission variation in core/shell CdSe CdSeTe ZnS

quantum dots conjugated to antibodies, WiSE 2013, International Conference WAVES in Science and

Engineering, 4-8 November 2013, Huatulco, Oaxaca, Mexico

18/08/2013 ; LOW-DIMENSIONAL SEMICONDUCTOR STRUCTURES, Material Research Society ,

Extranjero , Medios Impresos , Tetyana V. Torchynska, Larysa Khomenkova, Georgiy Polupan,

Gennadiy Burlak, Editores de MRS Proceeding volum published Cembridge University Press, Mater.

Res. Soc. Symp. Proc. Vol. 1617 © 2014 , IMRC 2013 - Symposium ¿ Low-Dimensional Semiconductor

Structu

11/08/2013 ; ORGANIZADORA DE XXII CONGRESO INTERNACIONAL IMRC 2013, SYMPOSIUM .7E,,

Sociedad mexicana de materiales , Extranjero , Simposium , Organizadora Symposium 7E ""Low

dimensional semiconductor structures ""at IMRC2013, Agosto 11-15, 2013, Can Cun, Mexico,

http://www.mrs.org/imrc2013/

http://www.mrs-mexico.org.mx/imrc2013/

11/06/2013 ; EDITORA DE SPECIAL ISSUE OF PHYSICA E,, ELSEVIER , Extranjero , Medios Impresos ,

Editors T.V.Torchynska, Yu. Vorobiev, Zs. Horvath and Editorial for Special Issue of Physica E, v.51,

2013 with papers presented in Symposium 6B "LOW DIMENSIONAL SEMICONDUCTOR

STRUCTURES"" at IMRC 2012 , Can Cun, Mexico

05/06/2013 ; EDITORIAL, Elsevier Publisher , Extranjero , Revistas de Divulgación , T.V.Torchynska, Yu.

Vorobiev, Zs. Horvath, Editorial, J. Phys. E, 51 (2013) p.1.

DOI:10.1016/j.physe.2013.03.012.http://authors.elsevier.com/sd/article/S1386947713000775

14/05/2013 ; EVALUADORA EXTERNA EN LA COMISIÓN DE CONVOCATORIA PROYECTOS DE LA

INVESTIGACIÓN, Universidad de la IBEROAMERICANA , Nacional , Seminarios , Evaluadora

externa en la Comisión de Convocatoria proyectos de la Investigación en Universidad de la

IBEROAMERICANA

22/11/2012 ; PRESENTACION INVITADA: NANOCRYSTALLS OF IV AND III-V GROUPS, CONACYT, ,

Nacional , Conferencias , T. V. Torchynska (invitada), Nanocrystalls of IV and III-V groups, Congso

Nacional de Investigacion Cientifica Basica 2012 `¿Casos de Éxito¿¿, CONACYT, 21-23 de Noviembre,

2012, Cancun, Mexico

12/09/2012 ; EVALUADORA EXTERNA EN PROGRAMA DOCTORADA, Universidad Autónoma

Metropolitana , Nacional , Conferencias , Evaluadora externa en programa Doctorado en Universidad

Autónoma Metropolitana

13/08/2012 ; PRESENTACION INVITADA: SI QUANTUM DOT STRUCTURES AND THEIR

APPLICATIONS, Sociedad Mexicana de Materiales , Extranjero , Conferencias , T.Torchynska,

L.Shcherbyna, (invitada), Si quantum dot structures and their applications. IMRC 2012, XXI

International Material Research Congress, 12-16 August 2012, Can Cun, Mexico

12/08/2012 ; ORGANIZADORA DE XXI CONGRESO INTERNACIONAL, IMRC 2012, SYMPOSIUN 6B,,

Sociedad Mexicana de Materiales , Extranjero , Simposium , Paginas del Internet de MRS-USA y

SMM-Mexico, Organizer of Symposium 6B ""Low dimensional semiconductor structuresat IMRC2012,

Agosto 12-16, 2012, Can Cun, Mexico,

http://www.mrs.org/imrc2012/

http://www.mrs-mexico.org.mx/imrc2012/

01/06/2012 ; PRESENTACION INVITADA: SI AND GE QUANTUM DOTS AND DIFFERENT ASPECTS OF

APPLICATION, Universidad Autónoma del Estado de Morelos , Nacional , Conferencias , T. V.

Torchynska (invitada), Si and Ge quantum dots and different aspects of application, Conferencia en

Centro de Investigacion en Ingenieria y Ciencias Aplicadas, Universidad Autónoma del Estado de

Morelos, Cuernavaca, Morelos, México,1 DE Junio de 201

12/05/2012 ; INTEGRANTE DE LA COMISIÓN DE EXPERTOS DE FISICO MATEMATICAS, CONACYT ,

Nacional , Seminarios , Integrante de la Comisión de expertos de FISICO MATEMATICAS de la

Convocatoria de Investigación Científica Básica 2012, CONACYT

22/11/2011 ; PRESENTACION INVITADA: SI AND GE QUANTUM DOTS AND EXAMPLES OF

APPLICATIONS. NANOESTRUCTURAS Y MATERIALES NANOESTRUCTURADOS, DAAD

de Intercambio Mexico-Alemania, , Extranjero , Ferias Cientificas y Tecnologi , T. V. Torchynska

(invitada), Si and Ge quantum dots and examples of applications Nanoestructuras y Materiales

Nanoestructurados, 2do ciclo de Conferencias y 1ro seminario alumni DAAD de Intercambio Mexico-

Alemania, 22-23 Noviembre 2011, Mexico city, Mexi

24/08/2011 ; PRESENTACION INVITADA: CDSE/ ZNS QUANTUM DOTS WITH INTERFACE STATES AS

BIOSENSORS, Sociedad SPIE Optics and Photonics , USA , Extranjero , Ferias Cientificas y

Tecnologi , T. V. Torchynska (invitada), CdSe/ ZnS quantum dots with interface states as biosensors,

SPIE Optics and Photonics 2011, 21-25 August 2011, San Diego, California, USA

23/08/2011 ; PRESENTACION INVITADA: SI QUANTUM DOTS AND DIFFERENT ASPECTS OF

APLICATIONS, Sociedad SPIE de EEUU , Extranjero , Ferias Cientificas y Tecnologi , T. V.

Torchynska (invitada), Si quantum dots and different aspects of aplications, SPIE Optics and Photonics

2011, 21-25 August 2011, San Diego, California, USA

15/08/2011 ; PRESENTACION INVITADA: SI AND GE QUANTUM DOTS AND DIFFERENT ASPECTS OF

APPLICATIONS,, Sociedad Mexica Materiales , Extranjero , Ferias Cientificas y Tecnologi , T. V.

Torchynska (invitada), Si and Ge quantum dots and different aspects of applications, IMRC 2011,

Congress, Symposium 05; Advances in Semiconducting Materials, Can Cun, Mexico

11/10/2010 ; PRESENTACION INVITADA: EMISSION EFFICIENCY OF CRYSTALLINE AND

AMORPHOUS SI NANOCLUSTERS, Academia de Ciencias de Rumania , Extranjero , Ferias

Cientificas y Tecnologi , T.V. Torchynska, (magistral), Emission efficiency of crystalline and amorphous

Si nanoclusters, IEEE International Semiconductor Conference, CAS 2010, Sinaia, Rumania, October

11-13, 2010

14/09/2010 ; PRESENTACION MAGISTRAL: SEMICONDUCTOR QUANTUM DOTS WITH INTERACE

STATE IN BIOLOGY AND MEDICINE, Universidad de Roma, Italy , Extranjero , Ferias Cientificas

y Tecnologi , T.V. Torchynska, (invitada), Semiconductor Quantum dots with interace state in biology

and medicine, X International Conference on Nanostructures materials, Session Nanobiotechnologies,

Roma, Italy, September 13-17, 2010.

12/02/2010 ; ORGANIZACIÓN DE LABORATORIO OPTOELECTRÓNICA, ESFM-IPM , , Talleres ,

Organización de Laboratorio Optoelectrónica en ESFM-IPM

11/02/2010 ; MEMBER OF EDITORIAL BOARD, NANO BULLETIN, ISSN 2159-0427, Global Scientific

Publishers , Extranjero , Medios Impresos , MEMBER OF EDITORIAL BOARD, NANO Bulletin,

ISSN 2159-0427 Global Scientific Publishers

13/01/2010 ; ORGANIZACIÓN PROGRAMA DOCTORADO Y GRUPO INVESTIGADORE, UPIITA del IPN

, Nacional , Seminarios , Organización programa Doctorado y Grupo investigadores en UPIITA del IPN

04/01/2010 ; MIEMBRO DE COMITE ACADEMICO DE ESFM-IPN, ESFM-IPN , Nacional , Seminarios ,

13/10/2009 ; GANADORA DE PREMIO DE LA INVESTIGACION DEL IPN 2009, IPN , Nacional , Ferias

Cientificas y Tecnologi , Premio de la Investigacion del IPN 2009

07/09/2009 ; PRESENTACION INVITADA: INTERFACE STATES AND BIOCONJUGATION OF

CORE/SHELL CDSE/ZNS QUANTUM DOTS,, Universidad de Arkanzas de EEUU , Extranjero ,

Simposium , T. V. Torchynska (magistral), Interface states and bioconjugation of core/shell CdSe/ZnS

quantum dots, International Conferences on Interaction Among Nanostructures, Septiembre 4-8, 2009,

Virginian Islands, USA.

03/09/2009 ; ORGANIZADORA DE INTERNATIONAL CONFERENCES ON INTERACTION AMONG

NANOSTRUCTURES, SEPTEMBER, 3-7, 2009, VIRGINIAN ISLANDS, USA., American

PhysicaL Society , Extranjero , Conferencias , International Program Committee of the International

Conferences on Interaction Among Nanostructures, September, 3-7, 2009, Virginian Islands, USA.

23/06/2009 ; ENTREVISTA FORMADORA DE NUEVAS GENERACIONES DE INVESTIGADORES, Gaseta

Politecnica del IPN , Nacional , Medios Impresos , Tetyana Torchynska, formadora de nuevas

generaciones de investigadores, Entrevista para Gaseta Politecnica del IPN, N739, Junio 23, 2009.

09/04/2009 ; ARTICULO: EL MUNDO FANTÁSTICO DE LOS PUNTOS CUANTICOS O NO TODO LO

QUE BRILLA ES ORO,, Instituto Politecnico Nacional , Nacional , Revistas de Divulgación , L.G.

Vega Macotela, J. Douda, T.V. Torchynska, El mundo fantástico de los puntos cuanticos o no todo lo que

brilla es oro, Revista del IPN Conversus, N.79, p. 30-32, 2009, ISSN 1665-2665.

07/04/2009 ; PRESENTACION INVITADA: EXCITON-POLARITON EFFECTS IN SIC NANOCRYSTALS,,

Universidad de Kerala, India , Extranjero , Simposium , T. V. Torchynska (invitada), Exciton-polariton

effects in SiC nanocrystals, First International Conference on Nanostructured Materials and

Nanocomposites (ICNM ¿ 2009): April 6, 7 and 8, 2009, Kottayam, Kerala, India

12/02/2009 ; ORGANIZACIÓN PROGRAMAS MAESTRÍA Y DOCTORADO EN FISICOMATEMATICAS,

ESIME del IPN , Nacional , Seminarios , Organización programas Maestría y Doctorado en ESIME del

IPN

02/02/2009 ; PRESENTACION INVITADA " EXCITON-POLARITON EFFECTS IN SIC

NANOCRYSTALS"INTERNATIONAL CONFERENCE ON NANOSTRUCTURED

MATERIALS AND NANOCOMPOSITES,2009, KERALA, INDIA., Kerala University, India ,

Extranjero , Simposium , Presentacion invitada de T. V. Torchynska, Exciton-polariton effects in SiC

nanocrystals

First International Conference on Nanostructured Materials and Nanocomposites (ICNM ¿ 2009): April

6, 7 and 8, 2009, Kottayam, Kerala, India

31/01/2009 ; MIEMBRO DE "INTERNATIONAL SCIENTIFIC PROGRAM COMMITTEE OF

INTERNATIONAL CONFERENCES ON INTERACTION AMONG NANOSTRUCTURES",

SEPTEMBER, 3-7, 2009, VIRGINIAN ISLANDS, USA., Nano Research Society, Ohio University,

Athens, Ohio. EE.UU , Extranjero , Simposium , Miembro de " International Scientific Program

Committee of International Conferences on Interaction Among Nanostructures", September, 3-7, 2009,

Virginian islands, USA.

02/12/2008 ; RESPONSABLE Y MODERADOR DE SECCION ELECTRONICA PARA 19 REUNION DE

OTONO DE COMUNICACIONES, COMPUTACIÓN, ELECTRÓNICA Y EXPOSICIÓN

INDUSTRIAL, ROC&C 2008, 30 NOVIEMBRE -6 DICEMBRE 2008, ACAPULCO, MEXICO,

IEEE seccion Mexico , Nacional , Simposium , Moderador de seccion Electronica para 19 Reunion de

otono de comunicaciones, computación, electrónica y exposición industrial, ROC&C 2008, 30

Noviembre -6 Dicembre 2008, Acapulco, Mexico

01/12/2008 ; PRESENTACION INVITADA, "POROUS SIC FOR GAN BASED ELECTRONICS", 19

REUNION DE OTONO DE COMUNICACIONES, COMPUTACIÓN, ELECTRÓNICA Y

EXPOSICIÓN INDUSTRIAL, ROC&C 2008, 30 NOVIEMBRE -6 DICEMBRE 2008,

ACAPULCO, MEXICO, IEEE seccion Mexico , Nacional , Simposium , Presentacion invitada

T.V.Torchynska, G. Polupan, Porous SiC for GaN based electronics, 19 Reunion de otono de

comunicaciones, computación, electrónica y exposición industrial, ROC&C 2008, 30 Noviembre -6

Dicembre 2008, Acapulco, Mexico

01/07/2008 ; PRESENTACION INVITADA DE, "EMISSION OF SI NANOCLUSTERS OF DIFFERENT

PHASES IN AMORPHOUS HYDROGENATED SILICON, 9TH INTERNATIONAL

WORKSHOP ON BEAM INJECTIO ASSESMENT OF MICROSTRUCTURE IN

SEMICONDUCTORS", TOLEDO, SPAIN, 29 JUNE-3JULY 2008,, Universidad de Madrid, Espania

, Extranjero , Simposium , Presentacion invitada de T. V. Torchynska, Emission of Si nanoclusters of

different phases in amorphous hydrogenated silicon, 9th International Workshop on Beam Injectio

Assesment of Microstructure in Semiconductors, Toledo, Spain, 29June-3July 2008,

30/06/2008 ; PRESENTACION INVITADA DE, " EXCTON RELATED PHOTOLUMINESCENCE

STIMULATION IN SIC NANOCRYSALLITES", 9TH INTERNATIONAL WORKSHOP ON

BEAM INJECTIO ASSESMENT OF MICROSTRUCTURE IN SEMICONDUCTORS, TOLEDO,

SPAIN, 29JUNE-3JULY 2008,, Universidad de Madrid, Espania , Extranjero , Simposium ,

Presentacion invitada de T.V.Torchynska, Excton related photoluminescence stimulation in SiC

nanocrysallites, 9th International Workshop on Beam Injectio Assesment of Microstructure in

Semiconductors, Toledo, Spain, 29June-3July 2008,

18/06/2008 ; MIEMBRO DE "INTERNATIONAL EDITORIAL AND ADVISERY BOARD OF IST PRESS",

International Science and Technology Press (IST Press) , Extranjero , Medios Impresos , Publisher

House - International Science and Technology Press (IST Press)-

MEMBER OF INTERNAIONAL EDITORIAL AND ADVISERY BOARD OF IST PRESS

24/03/2008 ; PRESENTACION, PHOTOLUMINESCENCE OF SI NANOCLUSTERS IN AMORPHOUS

HYDROGENATED SILICON, 2008 MRS MEETING, SYMPOSIUM A, 24-27 MARCH, 2008,

SAN FRANCISCO, USA., American MRS, USA , Extranjero , Simposium , Presentacion de T. V.

Torchynska, Photoluminescence of Si nanoclusters in amorphous hydrogenated silicon, 2008 MRS

Meeting, Symposium A, 24-27 March, 2008, San Francisco, USA.

03/02/2008 ; MIEMBRO DE "INTERNATIONAL SCIENTIFIC PROGRAM COMMITTEE OF

INTERNATIONAL CONFERENCES ON INTERACTION AMONG NANOSTRUCTURES",

FEBRUARY 3-7, 2008, ORLANDO, FLORIDA, USA., Nano Research Society, Ohio University,

University of Arkansas, EEUU. , Extranjero , Simposium , Miembro de " International Scientific

Program Committee of International Conferences on Interaction Among Nanostructures", February 3-7,

2008, Orlando, Florida, USA.

04/01/2008 ; PRESENTACION MAGISTRAL DE T. V. TORCHYNSKA, SOME ASPECTS OF EXCITON

THERMAL EXCHANGE IN INAS QD DWELL LASER STRUCTURES, INTERNATIONAL

CONFERENCES ON INTERACTION AMONG NANOSTRUCTURES, FEBRUARY 3-7, 2008,

ORLANDO, FLORIDA, USA., Nano Research Society, Ohio University, USA , Extranjero ,

Simposium , Presentacion magistral de T. V. Torchynska, Some aspects of exciton thermal exchange in

InAs QD DWELL laser structures, International Conferences on Interaction Among Nanostructures,

February 3-7, 2008, Orlando, Florida, USA.

30/11/2007 ; PRESENTACION INVITADA " EXCITON CAPTURE AND TERMAL ESCAPE IN INAS

QUANTUM DOT STRUCTURES FOR OPTICAL FIBER COMMUNICATION", ROC&C 2007,

28 NOV. -4 DIC. 2008, ACAPULCO, MEXICO, IEEE seccion Mexico , Nacional , Simposium ,

Presentacion de T.V.Torchynska, Exciton capture and termal escape in InAs quantum dot structures for

optical fiber communication, 18 Reunion de otono de comunicaciones, computación, electrónica y

exposición industrial, ROC&C 2007, 28 Nov. -4 Dic. 2008, Ac

20/08/2007 ; PRESENTACION INVITADA DE " CORRELATION BETWEEN THE

PHOTOLUMINESCENCE AND DIFFERENT TYPES OF SI NANOCLUSTERS IN

AMORPHOUS SILICON". 22ND INTERNATIONAL CONFERENCE ON AMORPHOUS AND

NANOCRYSTALLINE SEMICONDUCTORS, BRECKENRIDGE, COLORADO, 2007, Denver

University, National Renewable sources Laboratory, USA , Extranjero , Simposium , Presentacion

invitada de T. V. Torchynska, Correlation between the photoluminescence and different types of Si

nanoclusters in amorphous silicon. 22nd International Conference on Amorphous and Nanocrystalline

Semiconductors, Breckenridge, Colorado, August

16/05/2007 ; PRESENTACION DE INVITADA, OPTICAL AND STRUCTURAL PROPERTIES OF SIC

NANOCRYSTALLS, XIV-TH SEMICONDUCTING AND INSULATING MATERIALS

CONFERENCE, SIMC XIV, MAY 15-20, 2007, FAYETTEVILLE, AR, USA., University of

Arkanzas, USA , Extranjero , Simposium , Presentacion de T. V. Torchynska, Optical and structural

properties of SiC nanocrystalls, XIV-th Semiconducting and Insulating Materials Conference, SIMC

XIV, May 15-20, 2007, Fayetteville, AR, USA.

15/05/2007 ; RESPONSABLE DEL PROGRAMA DE SECCION ¿LOW DIMENSIONAL

SEMICONDUCTOR NANOSTRUCTURES II¿¿, XIV-TH SEMICONDUCTING AND

INSULATING MATERIALS CONFERENCE, SIMC XIV, MAY 15-20, 2007, FAYETTEVILLE,

AR, USA., Universidad de Arkanzas, Fayetteville, AR, EE.UU. , Extranjero , Simposium , Responsable

del Programa de seccion ¿Low Dimensional Semiconductor Nanostructures II¿

XIV-th Semiconducting and Insulating Materials Conference, SIMC XIV, May 15-20, 2007, Fayetteville,

AR, USA.

15/11/2006 ; PRESENTACION DE "SIZE DEPENDENT ENERGY TREND FOR GROUND AND EXCITED

STATES IN INAS QUANTUM DOTS IN A WELL INGAAS-GAAS STRUCTURES", ESIME-IPN

, Nacional , Simposium , Presentacion de T. Torchynska a 9 Congreso Nacional de Ingenieria

electromecanica y de sistemas, Noviembre 13-17, 2006

15/11/2006 ; PRESENTACION DE "SIZE DEPENDENT PHOTOLUMINESCENCE OF SI

NANOCRYSTALS IN AMORPHOUS SILICON MATRIX", ESIME-IPN , Nacional , Simposium ,

Presentacion de T. Torchynska a 9 Congreso Nacional de Ingenieria electromecanica y de sistemas

17/10/2006 ; MIEMBRO DEL COMITE INTERNACIONAL DEL PROGRAMA DE CONFERENCIA

INTERNACIONAL DE FOTOELECTRICA. OCTUBRE 2-4, 2006,UZBEKISTAN, Academia de

Ciencias de Uzbekistan , Extranjero , Simposium , Member of International Advisory and Program

Committees

Comite International del Programa de Photoelectric Conference Internacional, Octubre 2-4,2006,

Uzbekistan

21/08/2006 ; PRESENTACION MAGISTRAL DE, "BALLISTIC EFFECT AND PHOTOLUMINESCENCE

OF SI NANOCRYSTALLITES", XV INTERNATIONAL MATERIAL RESEARCH CONGRESS,

20-24 AUGUST 2006, CAN CUN, MEXICO,, Academia Mexicana de Materiales , Nacional ,

Simposium , Presentacion magistral de T.V. Torchynska, Ballistic effect and photoluminescence of Si

nanocrystallites, XV International Material Research Congress, 20-24 August 2006, Can Cun, Mexico,

20/06/2006 ; PRESENTACION INVITADA DE T. TORCHYNSKA, EXCITON DYNAMICS IN INAS

QUANTUM DOTS EMBEDDED IN INGAAS/GAAS QUANTUM WELL STRUCTURES,

INTERNACIONAL WORKSHOP NANOMAT 2006, ANTALIA/TURKEY, JUNE 20-23, 2006,

Instambul University, Turkey , Extranjero , Simposium , Presentacion invitada de T. Torchynska, J. L.

Casas Espinola, Exciton dynamics in InAs quantum dots embedded in InGaAs/GaAs quantum well

structures, Internacional Workshop NANOMAT 2006, Antalia/Turkey, June 20-23, 2006

15/05/2006 ; COMITE DE EDITORES Y EVALUADORES DE CONFERENCIA NACIONAL DE FISICA Y

MATEMATICAS POR 70 ANOS DEL IPN, Instituto Politecnico Nacional , Nacional , Revistas de

Divulgación , Comite de Editores y Evaluadores del Libro de Memorias de Conferencia Nacional de

Fisica y Matematicas por 70 anos del IPN

10/05/2006 ; ARBITRO DE LOS TRABAJOS PRESENTADOS A 11 REUNION NACIONAL ACADEMICA

DE FISICA Y MATEMATICAS, ESFM-IPN , Nacional , Simposium , Arbitro de los trabajos

presentados a 11 Reunion Nacional Academica de fisica y Matematicas

03/05/2006 ; PRESENTACION INVITADA, BALLISTIC EFFECT AND PHOTOLUMINESCENCE OF SI

NANOCRYSTALLITE STRUCTURES, MEXICAN WORKSHOP ON NANOSTRUCTURED

MATERIALS, PUEBLO, MEXICO, MAY 2-4, 2006., BUAP, Pueblo, Mexico , Nacional ,

Simposium , Presentacion de T.V. Torchynska, Ballistic effect and photoluminescence of Si

nanocrystallite structures, Mexican workshop on Nanostructured Materials, Pueblo, Mexico, May 2-4,

2006.

15/03/2006 ; VICEPRESIDENTE DE CIENCIAS FISICO MATEMATICAS DEL CONSEJO DE

INVESTIGADORES POLITECNICOS, Sociedad de Profesores Investigadores del IPN , Nacional ,

Talleres , Vicepresidente de Ciencias Fisico Matematicas del Consejo de Investigadores Politecnicos

02/11/2005 ; LUZ Y FUTURO (ISSN 1665-2665), Instituto Politecnico Nacional , Nacional , Revistas de

Divulgación , Entrevista para Revista CONVERSACION del IPN

13/10/2005 ; PRESENTACION INVITADA, PHOTOLUMINESCENCE OF SI NANOCRYSTALLITES IN

DIFFERENT TYPES OF MATRICES, FIRST CONFERENCE ON ADVANCES IN OPTICAL

MATERIALS, TUCSON, ARIZONA, USA, OCTOBER 12-15, 2005,, Universidad de Tucson,

Arizona, USA , Extranjero , Simposium , Presentacion invitada T. Torchynska, Photoluminescence of Si

nanocrystallites in different types of matrices, First Conference on Advances in Optical Materials,

Tucson, Arizona, USA, October 12-15, 2005,

11/09/2005 ; PRESENTACION MAGISTRAL , PHOTOLUMINESCENCE MECHANISMS IN SI AND GE

NANOCRYSTALLITES EMBEDDED IN DIFFERENT TYPES OF MATRIXES,, Academia de

Ciencias de Hungaria , Extranjero , Simposium , Presentacion magistral de T. V. Torchynska,

Photoluminescence mechanisms in Si and Ge nanocrystallites embedded in different types of matrixes,

International Workshop on Semiconductor Nanocrystallites, SEMINANO2005, September 10-12, 2005,

Budapest,

25/07/2005 ; PRESENTACION INVITADA, "PHOTOLUMINESCENCE OF SI AND GE

NANOCRYTSALLITES", 23RD INTERN. CONFERENCE ON DEFECTS IN

SEMICONDUCTORS, ICDS-23, JULY24-29, 2005, AWAJI ISLAND, JAPAN, Universidad de

Awaji, Japan , Extranjero , Simposium , Presentacion invitada de T. V. Torchynska, Photoluminescence

of Si and Ge nanocrytsallites, 23rd Intern. Conference on Defects in Semiconductors, ICDS-23, July24-

29, 2005, Awaji Island, Japan.

28/09/2004 ; PRESENTACION MAGISTRAL « MECHANISMS OF PHOTOLUMINESCENCE OF SI OR GE

NANOCRYSTALLITES EMBEDDED IN DIFFERENT MATRIXES, XXIV CONGRESO

ANNUAL SOCIEDAD MEXICANO DE CIENCIA Y TECNOLOGIA DE SUPERFICIES Y

MATERIALES, QUINTANA ROO, SEPT. 2004, Sociedad Mexica SMCTSM A,C , Nacional ,

Simposium , Presentacion magistral de T.V. Torchynska « Mechanisms of photoluminescence of Si or

Ge nanocrystallites embedded in different matrixes, XXIV Congreso Annual Sociedad Mexicano de

Ciencia y Tecnologia de Superficies y Materiales, SMCTSM A,C. Quintana Roo, 2

20/07/2004 ; PRESENTACION INVITADA DE "PHOTOLUMINESCENCE MAPPING ON INAS/INGAAS

QUANTUM DOT STRUCTURES,", IEEE , Nacional , Simposium , Presentacion de T. V.

Torchynska, Photoluminescence mapping on InAs/InGaAs Quantum Dot Structures, Inter. Conference on

Superlattice, Nano-structures and Nano-devices, July 19-23, 2004, Can Cun, Mexico, 2004.

20/07/2004 ; PRESENTACION DE "PHOTOLUMINESCENCE AND PHOTOCURRENT OF SCHOTTKY

DIODES BASED ON SI NANOCRYSTALS", IEEE seccion Mexico, UAM, , Nacional , Simposium ,

Presentacion de T. Torchynska, Photoluminescence and photocurrent of Schottky diodes based on Si

nancrystallites, International Conference on Superlattices, Nano-structures and Nano-devices 2004, July

18-23, 2004, Can Cun, Mexico

26/08/2003 ; PRESENTACION INVITADA, HOT CARRIER BALLISTIC TRANSPORT AND

PHOTOLUMINESCENCE EXCITATION IN SILICON NANOCRYSTALLITES, ASTATPHYS-

MEX-2003, PUETRTO VALARTE, MEXICO AUGUST,25-29, 2003., Universidad Gvadalajara,

Mexico, PEMEX, , Nacional , Simposium , Presentacion invitada de T.V.Torchynska, Hot carrier

ballistic transport and photoluminescence excitation in silicon nanocrystallites, ASTATPHYS-Mex-2003,

Puetrto Valarte, Mexico August,25-29, 2003.

06/02/2003 ; EMISORES DEL LUZ DE SILICIO, "REFORMA" , Nacional , Medios Impresos , interview con

Claudia Macedo Ramires para "REFORMA"

08/03/1998 ; WOMEN AND FUTURE, Pechersk administration , Extranjero , Medios Impresos , Interview for

newspaper "Pechersk", Kiev, Ukraine

23/02/1996 ; 1995 STATE UKRAINIA PRIZE, Pechersk, newspaper , Nacional , Medios Impresos , Informacion

sobre Promias de Estado de Ukrania en Ciencias y Tecnologias que reciio de Dra T. V. Torchynska

05/02/1993 ; UKRAINIAN SCIENTISTS, Newpaper of Toronto University , Extranjero , Medios Impresos ,

Newpaper of Toronto University

13/10/1990 ; USSR CONFERENCIA DE FISICA DE SEMICONDUCTORES, Academia Nacional de Ciencias de

Ucrania , Extranjero , Revistas de Divulgación , Publisher Nauka, Revista de Fisica de Ucrania i libro de

memorias

02/02/1990 ; LASERES DE NUEVO GENERACION, Academia Nacional de Ciencias de Ucrania , Extranjero ,

Revistas de Divulgación , Revista de Fisica de Ucrania

02/02/1980 ; FORECAST PARA II-VI SEMICONDUCTORS, Academia Nacional de Ciencias de Ucrania ,

Extranjero , Revistas de Divulgación , Revista Fisica de Ucrania

Documents

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