S. MattiazzoS. Mattiazzo1,21,2, M. Battaglia, M. Battaglia3,43,4, D. Bisello, D. Bisello1,21,2, D. Contarato, D. Contarato44, P. Denes, P. Denes44, P. Giubilato, P. Giubilato1,2,41,2,4, D. Pantano, D. Pantano1,21,2, N. Pozzobon, N. Pozzobon1,21,2, M. Tessaro, M. Tessaro22, J. Wyss, J. Wyss2,52,5

1 Dipartimento di Fisica, Università degli Studi di Padova, I-35131 Padova, Italy; 2 Istituto Nazionale di Fisica Nucleare, Sezione di Padova, I-35131 Padova, Italy; 3 Department of Physics, University of California, Berkeley, CA 94720, USA; 4 Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA; 5 DiMSAT, Università degli Studi di Cassino, Cassino, Italy.

Monolithic pixel detectors in 0.20µm Silicon On Insulator (SOI) technology have been developed, realized and characterized.This work shows the decisive effect of the substrate bias condition during irradiation on the total dose damage of the electronics.

THE TOTAL DOSE DAMAGE ON THE TRANSISTOR THE TOTAL DOSE DAMAGE ON THE TRANSISTOR

STRONGLY DEPENDS ON THE BIAS GIVEN TO THE STRONGLY DEPENDS ON THE BIAS GIVEN TO THE

SUBSTRATE DURING IRRADIATIONSUBSTRATE DURING IRRADIATION

THE TOTAL DOSE DAMAGE ON THE TRANSISTOR THE TOTAL DOSE DAMAGE ON THE TRANSISTOR

STRONGLY DEPENDS ON THE BIAS GIVEN TO THE STRONGLY DEPENDS ON THE BIAS GIVEN TO THE

SUBSTRATE DURING IRRADIATIONSUBSTRATE DURING IRRADIATION

NMOS transistor: (L = 0.50µm, W = 250µm, Normal Vthr, Core transistor, Body Tie) for four different bias conditions:

Vback = 0V, 5V, 10V with PSUB guard-ring floating

Vback = 10V with PSUB guard-ring at 0V

(is the PSUB guard-ring effective in containing the electrical field through the BOX?).

NMOS and PMOS Body of Body Tie transistors at 0V. Drain and source at 0V, gate NMOS HIGH (1.8V), gate PMOS LOW (0V). Substrate bias voltage (Vback) :

The leakage current and the threshold voltage strongly depend on the bias condition during irradiation: the higher Vback, the higher Ileak and the lower the Vthr (greater damage on the BOX).

This work was supported by the Director, Office of Science, of the U.S. Department of Energy under Contract no. DE-AC02-05CH11231 and by INFN and University of Padova, Italy.

We are also grateful to Prof. Yasuo Arai (KEK) for the effective collaboration in the development of SOI pixel detectors and for providing us with the test structures.

Acknowledgements: References:Conclusions and future studies:• Y. Arai et al., Proceedings of SNIC Symposium, 2006.

• M. Battaglia et al., Nuclear Instruments and Methods in Physics Research A, Vol. 583, Issues 2-3, 21 December 2007, p. 526-528. arXiv:0709.4218 [physics.ins-det]

• M. Battaglia et al., Nuclear Instruments and Methods in Physics Research A, Vol. 604, Issues 1-2, 1 June 2009, p. 380-384. arXiv:0811.4540 [physics.ins-det]

• M. Battaglia et al., M. Battaglia et al., Journal of Instrumentation (2009). arXiv:0903.3205 [physics.ins-det]

• D. Bisello et al. Radiation Physics and Chemistry 71, 713 (2004).

• Y. Arai talk at STD7, Hiroshima, September 2009.

We verified the dependence of the total dose damage from the substrate bias condition during irradiation;

A low electrical field through the BOX would allow the transistors to work properly up to doses of ~ 1Mrad

Both the backgate effect and the radiation sensitivity would improve, provided a method to keep low the potential under the BOX. Different solutions should be investigated:

a different geometry of PSUB guard-ring implantation on the substrate a buried P-Well under the BOX in the next version of the SOI-2-imager

C-V measure on SOI-2 chip:

measured depletion is smaller than expected(700·cm is the nominal resistivity)

In the SOI technology CMOS electronics is implanted on a thin silicon layer on top of a buried oxide (BOX): this ensures full dielectric isolation, small active volume and low junction capacitance (higher latch-up immunity, lower power consumption, higher speed applications)

[Y. Arai, KEK]

OKI (Japan) provides 0.15µm and 0.20µm Fully Depleted (FD) SOI processes with high-resistivity substrate (700 ·cm) and vias etched through the oxide which contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied.

Only results on 0.20µm process are shown in the poster, as this process is optimized for low leakage currents and will be used for the development of future detectors.

SOI technology for monolithic pixel sensors:

• 0.15µm OKI FD-SOI technology• 16050 digital pixels (1010µm2)• 160100 analog pixels (1010µm2)• MIPs detection• First radiation damage tests

SOI-2 SOI-2 (2008)(2008)

• 0.20µm OKI FD-SOI technology• 128172 digital pixels (2020µm2)• 40172 analog pixels (2020µm2)• Optimized for low leakage current• Currently under test

SOI-1 SOI-1 (2007)(2007)

SOI-2-IMAGERSOI-2-IMAGER(2009)(2009)

• 0.20µm OKI FD-SOI technology• 256256 analog pixels (13.7513.75µm2)• 4 analog outputs• 5mm chip, 3.2mm active • Just delivered

Chip production:

When exposed to ionizing radiation, electron-hole pairs are created inside the thick oxide.

If a depletion voltage is applied to the detector (substrate), a strong electrical field is present inside the BOX.

Due to the presence of the electrical field, charges are immediately separated and do not recombine.

The electron-hole pairs escaping recombination (fractional yieldfractional yield) lead to positive charge trapping throughout the BOX and consequently to an increase of the top-gate leakage current.

Fractional Yield:The X-ray irradiation facility installed at the INFN National Laboratory of Legnaro (Padova, Italy) and used for the total dose damage studies described in this poster is the Seifert Rp-149 Semiconductor Irradiation System

Tube with W (7.4-12.06 keV L-lines) anode.

Maximum tube voltage 60 kV. Maximum tube current 50 mA.

X,Y (motorized) and Z (manual) axis for accurate position setting of the tube.

OKI 0.20µm FD process

16 NMOS and 16 PMOS transistors with source in common, gate and drain separated

Each transistor is surrounded by 1µm PSUB guard ring

Both Body floating and Body Tie transistors

W/L = 500

Normal, Low, High Voltage Threshold Irradiation in air at room temperature.

Dose rate: 165rad(SiO2)/sec.

Test structures:X-ray machine:

Total dose tests:

Bias Bias conditionsconditions

during during irradiation:irradiation:

PSUBPSUBGUARD-RINGGUARD-RING

B or P(~5·1015cm-2)

PSUBguard-ring

SOI electronic layerBOX

The PSUB guard-ring The PSUB guard-ring tied at GND during tied at GND during

irradiation indeed limits irradiation indeed limits the electrical field the electrical field

through the BOX and through the BOX and improves the radiation improves the radiation

hardness of the device.hardness of the device.

The PSUB guard-ring is effective in limiting the backgate effectThe PSUB guard-ring is effective in limiting the backgate effect

PSUB guard-ring at GNDPSUB guard-ring at GND PSUB guard-ring “floating”PSUB guard-ring “floating”

For VFor Vbackback = 0V the transistor is still working properly up to doses of ~1Mrad. = 0V the transistor is still working properly up to doses of ~1Mrad.

With a standard PSUB implantation,

for Vback > 10V, output starts decreasing due to

back gate effect

AD

C O

UT

[A

DU

]

Back gate effect

Expected curve (depletion increase)

[Toshinobu Miyoshi (KEK) presented at STD7, Hiroshima, 2009]

Vback

BURIEDBURIEDP-WELLP-WELL(BPW)(BPW)

A new implant method was provided by OKI in 2008, consisting of a lightly doped P-well implanted

below the BOX through the SOI layer.

IR laser test on intpix3 (same pixel as intpix2)

Vback

AD

C O

UT

[A

DU

]

[Toshinobu Miyoshi (KEK), presented at STD7, Hiroshima, 2009]

With the BPW, no back gate effect up to 80V (~60µm).

A lower electric field in the BOX

should also improve radiation hardness

B (~1·1012cm-2)

BOX

Buried P-Well (BPW)

SOIelectronic

slayerpixel peripheral

Depletion depthDepletion depth

Threshold VoltageThreshold Voltage

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.E+00 1.E+01 1.E+02 1.E+03 1.E+04

Dose (krad)

Vth

r (V

)

0V

5V

10V

10V (PSUBguard @ GND)

Leakage currentLeakage current

1.E-12

1.E-11

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E+00 1.E+01 1.E+02 1.E+03 1.E+04

Dose (krad)

I leak

(A

)

0V

5V

10V

10V (PSUBguard @ GND)

VVbackback = 0V = 0V

(PSUB guard-ring Floating) (PSUB guard-ring Floating)

1.E-12

1.E-10

1.E-08

1.E-06

1.E-04

1.E-02

1.E+00

-0.2 0.2 0.6 1 1.4 1.8Vgs (V)

I ds

(A)

pre

30 krad

60 krad

100 krad

300 krad

680 krad

1.1 Mrad

2 Mrad

VVbackback = 5V = 5V

(PSUB guard-ring Floating)(PSUB guard-ring Floating)

1.E-12

1.E-10

1.E-08

1.E-06

1.E-04

1.E-02

1.E+00

-0.2 0.2 0.6 1 1.4 1.8Vgs (V)

I ds

(A)

pre

16 krad

23 krad

30 krad

56 krad

70 krad

100 krad

160 krad

VVbackback = 10V = 10V

(PSUB guard-ring Floating)(PSUB guard-ring Floating)

1.E-12

1.E-10

1.E-08

1.E-06

1.E-04

1.E-02

1.E+00

-0.2 0.2 0.6 1 1.4 1.8Vgs (V)

I ds

(A)

pre

18 krad

28 krad

33 krad

43 krad

48 krad

55 krad

62 krad

VVbackback = 10V = 10V

(PSUB guard-ring @ GND)(PSUB guard-ring @ GND)

1.E-13

1.E-11

1.E-09

1.E-07

1.E-05

1.E-03

1.E-01

1.E+01

-0.2 0.2 0.6 1 1.4 1.8Vgs (V)

I ds

(A)

pre

18 krad

28 krad

38 krad

68 krad

88 krad

128 krad

208 krad

IR laser test on intpix2

1.E-12

1.E-10

1.E-08

1.E-06

1.E-04

1.E-02

1.E+00

-0.2 0.2 0.6 1 1.4 1.8Vgs (V)

I ds

(A)

Vback = 0V

Vback = 2V

Vback = 4V

Vback = 6V

Vback = 8V

Vback = 10V

Vback = 12V

Vback = 15V1.E-12

1.E-10

1.E-08

1.E-06

1.E-04

1.E-02

1.E+00

-0.2 0.2 0.6 1 1.4 1.8Vgs (V)

I ds

(A)

Vback = 0V

Vback = 2V

Vback = 4V

Vback = 6V

Vback = 8V

Vback = 10V

Vback = 12V

Vback = 15V

0

20

40

60

80

100

120

140

160

180

200

0 20 40 60 80 100 120

Vback (V)

W (m m

)

Calculated

Measured